STMicroelectronics STGW30NC60WD Schematic [ru]

Features

■ High frequency operation

■ Lower C

susceptibility)

■ Very soft ultra fast recovery antiparallel diode

RES

/ C

ratio (no cross-conduction

IES

STGW30NC60WD

30 A, 600 V ultra fast IGBT

Applications

■ High frequency motor controls, inverters, UPS

■ HF, SMPS and PFC in both hard switch and

resonant topologies

Description

This IGBT utilizes the advanced Power MESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.

3

2

1

TO-247

Figure 1. Internal schematic diagram

Table 1. Device summary

Order code Marking Package Packaging

STGW30NC60WD GW30NC60WD TO-247 Tube

November 2008 Rev 5 1/14

www.st.com

14

Contents STGW30NC60WD

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14

STGW30NC60WD Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

CES

I

C

I

C

I

CP

I

CL

V

I

I

FSM

P

TOT

T

T

1. Calculated according to the iterative formula:

2. Pulse width limited by max junction temperature

3. V

CLAMP

Collector-emitter voltage (VGE = 0)

(1)

Collector current (continuous) at 25 °C 60 A

(1)

Collector current (continuous) at 100 °C 30 A

(2)

Collector current (pulsed) 150 A

(3)

Turn-off latching current 150 A

Gate-emitter voltage ± 20 V

GE

Diode RMS forward current at TC = 25 °C

F

Surge not repetitive forward current tp= 10 ms sinusoidal

Total dissipation at TC = 25 °C

Storage temperature

stg

Operating junction temperature

j

--------------------------------------------------------------------------------------------------------- -=

R

thj c–

= 80% (V

ICTC()

), VGE = 15 V, RG = 10 Ω, TJ = 150 °C

CES

T

V

CE sat()max()Tjmax()ICTC

–

jmax()TC

600 V

30 A

120 A

200 W

– 55 to 150 °C

(),()×

Table 3. Thermal resistance

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

Thermal resistance junction-case IGBT max. 0.63 °C/W

Thermal resistance junction-case diode max. 1.5 °C/W

Thermal resistance junction-ambient max. 50 °C/W

3/14

Electrical characteristics STGW30NC60WD

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

Table 4. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter

V

(BR)CES

V

CE(sat)

V

GE(th)

I

CES

I

GES

g

breakdown voltage

= 0)

(V

GE

Collector-emitter saturation
voltage

Gate threshold voltage

Collector cut-off current
(V

= 0)

GE

Gate-emitter leakage
current (VCE = 0)

Forward transconductance

fs

= 1 mA

I

C

= 15 V, IC= 20 A

V

GE

= 15V, IC = 20 A,TC= 125 °C

V

GE

V

= VGE, IC = 250µA

CE

V

= 600 V

CE

V

= 600 V, TC = 125 °C

CE

VGE = ±20 V

VCE = 15 V, IC = 20 A

600 V

2.1

2.5 V

1.8

3.75 5.75 V

2501µA

± 100 nA

15 S

Table 5. Dynamic electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

mA

C

C

C

Q

Q

Q

Input capacitance

ies

Output capacitance

oes

Reverse transfer

res

capacitance

g

Total gate charge
Gate-emitter charge

ge

Gate-collector charge

gc

= 25 V, f = 1 MHz,

V

CE

V

= 0

GE

= 390 V, IC = 20 A,

V

CE

= 15 V,

V

GE

(see Figure 18)

2080

175

52

102

17.5
47

pF
pF
pF

140 nC

nC
nC

4/14

STGW30NC60WD Electrical characteristics

Table 6. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

(di/dt)

t

d(on)

t

(di/dt)

t

r(Voff

t

d(off

t

t

r(Voff

t

d(off

t

Turn-on delay time
Current rise time

r

Turn-on current slope

on

Turn-on delay time
Current rise time

r

Turn-on current slope

on

)

Off voltage rise time

)

Turn-off delay time
Current fall time

f

)

Off voltage rise time

)

Turn-off delay time
Current fall time

f

= 390 V, IC = 20 A

V

CC

R

G

= 10 Ω, V

GE

= 15 V,

(see Figure 17)

VCC = 390 V, IC = 20 A

= 10 Ω, V

R

G

T

= 125 °C (see Figure 17)

C

= 390 V, IC = 20 A,

V

CC

= 10 Ω, V

R

GE

GE

GE

= 15 V,

= 15 V

(see Figure 17)

= 390 V, IC = 20 A,

V

CC

= 10 Ω, VGE =15 V,

R

GE

= 125 °C

T

C

(see Figure 17)

29.5
12

1640

29

13.5

1600

19.5

118

27

46

151

38

Table 7. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

E

on

E

E

E

on

E

E

1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 19. If the IGBT is offered
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C). Eon include diode recovery energy.

Turn-on switching losses
Turn-off switching losses

off

Total switching losses

ts

(1)

Turn-on switching losses
Turn-off switching losses

off

Total switching losses

ts

= 390 V, IC = 20 A

V

CC

= 10 Ω, V

R

G

GE

= 15 V,

(see Figure 19)

= 390 V, IC = 20 A

V

CC

= 10 Ω, V

R

G

= 125°C (see Figure 19)

T

C

GE

= 15 V,

305
181
486

455
355
810

ns
ns

A/µs

ns
ns

A/µs

ns
ns
ns

ns
ns
ns

µJ
µJ
µJ

µJ
µJ
µJ

5/14