STMicroelectronics STGP3NB60F, STGD3NB60F Technical data
STGP3NB60F - STGD3NB60F
STGP3NB60FD-STGF3NB60FD-STGB3NB60FD
N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D
PowerMESH™ IGBT
2
PAK
TYPE
STGP3NB60F
STGD3NB60F
STGP3NB60FD
STGF3NB60FD
STGB3NB60FD
■ HIGH INPUTIMPEDANCE(VOLTAGE DRIVEN)
■ LOW ON-VOLTAGE DROP (V
■ LOW GATE CHARG E
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ HIGH FREQUENCY OPERATION
■ SHORT CIRCUIT RATED
V
CES
600 V
600 V
600 V
600 V
600 V
V
CE(sat)
(Typ) @125°C
<2.4 V
<2.4 V
<2.4 V
<2.4 V
<2.4 V
)
cesat
I
C
@125°C
3A
3A
3A
3A
3A
DESCRIPTION
Using the lat es t high voltage tech nology based on a
patented strip layout, STMicroelec troni cs has designed an advanced family of IGBTs, the Power-
™
MESH
IGBTs, with outstanding performances.
The suffix “F” identifies a family optimized to achieve
very low s witc hing times for frequency applications
(<40 KHz)
TO-220
2
PAK
3
2
1
TO-220FP
3
1
DPAKD
3
2
1
3
1
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ MOTOR CONTROLS
■ SMPS AND PFC IN BOTH HARD SWITCHING
Std. Version “D” Version
AND RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STGP3NB60F GP3NB60F TO-220 TUBE
STGD3NB60FT4 GD3NB60F DPAK TAPE & REEL
STGP3NB60FD GP3NB60FD TO-220 TUBE
STGF3NB60FD GF3NB60FD TO-220FP TUBE
STGB3NB60FDT4
GB3NB60FD
2
PAK
D
TAPE & REEL
1/14June 2003
STGP3NB60F/STGD3NB60F /ST GP3N B 60F D/S TG F3NB 60FD/ST GB3NB60FD
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
TO-220FP DPAK
600 V
6A
3A
V
CES
V
ECR
V
I
I
I
CM
I
f
I
fm
P
TOT
Collector-Emitter Voltage (VGS=0)
Emitter-Collector Voltage 20 V
Gate-Emitter Voltage ±20 V
GE
Collector Current (continuous) at TC=25°C
C
Collector Current (continuous) at TC=100°C
C
()
Collector Current (pulsed) 24 A
(1)
Forward Current 3 A
(1)
Forward Current Pulsed 24 A
Total Dissipation at TC= 25°C
Derating Factor 0.55 0.2 0.47 W/°C
V
T
() Pulse width limited by safe operatingarea
(1) For “D”versiononly
Insulation Withstand Voltage A.C. -- 2500 -- V
ISO
Storage Temperature – 55 to 150 °C
stg
T
Max. Operating Junction Temperature 150 °C
j
TO-220/D2PAK
68 25 60 W
THERMAL DATA
TO-220/D2PAK
Rthj-case Thermal Resistance Junction-case Max 1.8 5 2.1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
Rthc-h Thermal Resistance Case-heatsink Typ 0.5 °C/W
ELECTRICAL CHARACTERISTICS (T
= 25°C UNLESS OTHERWISE SPECIFIED)
CASE
TO-220FP DPAK
MAIN PARAMETERS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
CES
I
GES
Collector cut-off
(V
GE
Gate-Emitter Leakage
Current (V
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
=0)
CE
=0)
IC= 250 µA, VGE= 0 600 V
V
= Max Rating, TC= 25°C
CE
= Max Rating, TC= 125°C
V
CE
V
=±20V,VCE= 0 ±100 nA
GE
V
CE=VGE,IC
VGE=15V,IC=3A
VGE=15V,IC=3A,Tj=125°C
= 250 µA
35V
1.9
1.6
50
100
2.4 V
µA
µA
V
2/14
STGP3NB60F/STGD3N B 60F/S TG P3N B 60FD/ST GF3NB60FD/STGB3NB60FD
SWITCHING PARAMETERS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
r
(di/dt)
Eon
t
c
tr(V
off
t
d(off
t
f
E
(**)
off
E
ts
t
c
tr(V
off
t
d(off
t
f
E
(**)
off
E
ts
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-on Current Slope
on
Turn-on Switching Losses
Cross-over Time
Off Voltage Rise Time
)
Delay Time
)
Fall Time
Turn-off Switching Loss
Total Switching Loss
Cross-over Time
Off Voltage Rise Time
)
Delay Time
)
Fall Time
Turn-off Switching Loss
Total Switching Loss
=25V,Ic=3A
CE
=25V,f=1MHz,VGE= 0 230
V
CE
= 480 V, IC=3A,
V
CE
VGE=15V
VCC= 480 V, IC=3A
RG=10Ω,VGE=15V
= 480 V, IC=3ARG=10Ω
V
CC
VGE= 15 V,Tj = 125°C
=480V,IC=3A,
V
cc
R
=10Ω,VGE=15V
GE
Tj = 25 °C
=480V,IC=3A,
V
cc
RGE=10Ω,VGE=15V
Tj = 125 °C
2S
33
6
16
20 nC
1.5
8
12.5
4
840
31
220
60
105
150
125
149
490
174
230
305
295
326
pF
pF
pF
nC
nC
ns
ns
A/µs
µJ
ns
ns
ns
ns
µJ
µJ
ns
ns
ns
ns
µJ
µJ
COLLECTOR-EMITTER DIODE (“D” VERSION)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
rr
Q
rr
I
rrm
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Forward On-Voltage If= 1.5 A
f
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
I
f
Tj =125°C, di/dt = 100 A/µs
= 1.5 A, Tj = 125 °C
=3A,VR=35V,
1.31
0.95
45
70
2.7
1.8
V
V
ns
nC
A
3/14
STGP3NB60F/STGD3NB60F /ST GP3N B 60F D/S TG F3NB 60FD/ST GB3NB60FD
Output Characteristics
Transconductance Collector-Emitter On Voltagevs Temperature
Transfer Characteristics
Collector-Emitter On Voltagevs Collector Current
4/14
Normalized Collector-Emitter On Voltage vs Te mp.
STGP3NB60F/STGD3N B 60F/S TG P3N B 60FD/ST GF3NB60FD/STGB3NB60FD
Gate Threshold vs Temperatur e
Normalized Breakdo wn Voltage vs Temperature
Gate Charge vs Gate-Emitter Voltag eCapacitance Variations
Total Switching Lo sses vs Gate Resistance
Total Switching Lo sses vs Temperature
5/14
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