STMicroelectronics STP3NK80Z, STF3NK80Z, STD3NK80Z, STD3NK80Z-1 Technical data
N-channel 800V - 3.8Ω - 2.5A - TO-220/TO-220FP/DPAK/IPAK
Zener-protected SuperMESH™ Power MOSFET
General features
V
Type
STP3NK80Z 800 V < 4.5 Ω 2.5 A
STF3NK80Z 800 V < 4.5 Ω 2.5 A
STD3NK80Z 800 V < 4.5 Ω 2.5 A
STD3NK80Z-1 800 V < 4.5 Ω 2.5 A
DSS
(@Tjmax)
R
DS(on)
STP3NK80Z - STF3NK80Z
STD3NK80Z - STD3NK80Z-1
I
D
3
2
1
TO-220FPTO-220
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
3
1
IPAKDPAK
Internal schematic diagram
3
2
1
Order codes
Part number Marking Package Packaging
STP3NK80Z P3NK80Z TO-220 Tube
STF3NK80Z F3NK80Z TO-220FP Tube
STD3NK80ZT4 D3NK80Z DPAK Tape & reel
STD3NK80Z-1 D3NK80Z IPAK Tube
August 2006 Rev 4 1/18
www.st.com
18
Contents STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
I
P
V
DGR
V
DM
Drain-source voltage (VGS = 0) 800 V
DS
Drain-gate voltage (RGS = 20KΩ)800V
Gate-source voltage ± 30 V
GS
Drain current (continuous) at TC = 25°C 2.5
I
D
I
Drain current (continuous) at TC=100°C 1.57
D
(2)
Drain current (pulsed) 10
Total dissipation at TC = 25°C 70 25 W
TOT
Derating factor 0.56 0.2 W/°C
V
ESD(G-S)
dv/dt
V
T
T
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 2.5A, di/dt ≤ 200A/µs, VDD ≤ V
Gate source ESD
(HBM-C=100pF, R=1.5ΚΩ)
(3)
Peak diode recovery voltage slope 4.5 V/ns
Insulation withstand voltage (DC) - 2500 V
ISO
Operating junction temperature
J
Storage temperature
stg
, Tj ≤ T
(BR)DSS
JMAX.
TO-220 / DPAK
IPAK
-55 to 150 °C
TO-220FP
2.5
1.57
10
(1)
(1)
(1)
A
A
A
2V
Table 2. Thermal data
Symbol Parameter Value Unit
DPAK
IPAK
R
thj-case
R
TO-220 TO-220FP
Thermal resistance junction-case max 1.78 5 1.78 °C/W
Thermal resistance junction-ambient
thj-a
max
Maximum lead temperature for
T
l
soldering purpose
62.5 100 °C/W
300 °C
3/18
Electrical ratings STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
E
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
AS
(starting Tj=25°C, Id=Iar, Vdd=50V)
2.5 A
170 mJ
Table 4. Gate-source zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BV
Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V
GSO
1.1 Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
4/18
STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Electrical characteristics
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(VGS = 0)
Gate threshold voltage V
Static drain-source on
resistance
= 1mA, VGS= 0 800 V
I
D
V
= Max rating,
DS
= Max rating,
V
DS
Tc = 125°C
V
= ± 20V ±10 µA
GS
= VGS, ID = 50µA 3 3.75 4.5 V
DS
= 10V, ID = 1.25 A 3.8 4.5 Ω
V
GS
1
50
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
C
osseq
t
d(on)
t
d(off)
Q
Q
Q
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
increases from 0 to 80% V
Forward transconductance V
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Equivalent output
(2)
.
capacitance
Turn-on delay time
t
Rise time
r
Off-voltage rise time
t
Fall time
f
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
DSS
=15V, ID = 1.25A 2.1 S
DS
=25V, f=1 MHz, VGS=0
V
DS
=0, V
V
GS
=400 V, ID= 1.25 A,
V
DD
=4.7Ω, VGS=10V
R
G
=0V to 640V 22 pF
DS
(see Figure 18)
=640V, ID = 2.5 A
V
DD
=10V
V
GS
485
57
11
17
27
36
40
19
3.2
10.8
when VDS
oss
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
5/18
Electrical characteristics STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
I
SDM
V
SD
Q
I
RRM
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current 2.5 A
SD
(1)
Source-drain current (pulsed) 10 A
(2)
Forward on voltage ISD= 2.5 A, VGS=0 1.6 V
Reverse recovery time
t
rr
Reverse recovery charge
rr
Reverse recovery current
Reverse recovery time
t
rr
Reverse recovery charge
rr
Reverse recovery current
= 2.5A,
I
SD
di/dt = 100A/µs,
=50V, Tj=25°C
V
DD
(see Figure 20)
= 2.5 A,
I
SD
di/dt = 100A/µs,
=50V, Tj=150°C
V
DD
(see Figure 20)
384
1600
8.4
474
2100
8.8
ns
µC
A
ns
µC
A
6/18
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