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STE88N65M5
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ST MICROELECTRONICS STE88N65M5 Datasheet

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STE88N65M5
ISOTOP
TM
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N-channel 650 V, 0.024 Ω typ., 88 A, MDmesh™ V
Power MOSFET in a ISOTOP™ package
Datasheet - production data
Features
Order code V
STE88N65M5 710 V 0.029 Ω 88 A
• Very low R
• Higher V
DS @TjmaxRDS(on)
DS(on)
rating
DSS
max I
D
• Higher dv/dt capability
• Excellent switching performance
• 100% avalanche tested
Applications
• Switching applications
Description
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on­resistance, which is unmatched among silicon­based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Table 1. Device summary

Order code Marking Packages Packaging
STE88N65M5 88N65M5 ISOTOP Tube
February 2014 DocID025974 Rev 1 1/14
This is information on a product in full production.
www.st.com
Contents STE88N65M5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 DocID025974 Rev 1
STE88N65M5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit
V
I
DM
P
I
E
dv/dt
T
1. Pulse width limited by safe operating area.
2. ISD ≤ 88 A, di/dt = 400 A/μs, VDD = 400 V, V
Gate- source voltage ± 25 V
GS
I
Drain current (continuous) at TC = 25 °C 88 A
D
I
Drain current (continuous) at TC = 100 °C 55.7 A
D
(1)
Drain current (pulsed) 352 A
Total dissipation at TC = 25 °C 494 W
TOT
Max current during repetitive or single pulse avalanche
AR
(pulse width limited by T
JMAX
)
Single pulse avalanche energy
AS
(starting T
(2)
Peak diode recovery voltage slope 15 V/ns
Storage temperature - 55 to 150 °C
stg
T
Max. operating junction temperature 150 °C
j
= 25°C, ID = IAR, VDD = 50V)
j
DS (peak)
< V
(BR)DSS.
15 A
2000 mJ

Table 3. Thermal data

Symbol Parameter Value Unit
R
thj-case
R
thj-amb
Thermal resistance junction-case max 0.253 °C/W
Thermal resistance junction-ambient max 30 °C/W
DocID025974 Rev 1 3/14
14
Electrical charac teristics STE88N65M5

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown voltage
Zero gate voltage drain current (VGS = 0)
Gate-body leakage current (V
DS
= 0)
ID = 1 mA, VGS = 0 650 V
V
= 650 V 1 μA
DS
V
= 650 V, TC=125 °C 100 μA
DS
= ± 25 V ±100 nA
V
GS
Gate threshold voltage VDS = VGS, ID = 250 μA 345V
Static drain-source on- resistance
= 10 V, ID = 42 A 0.024 0.029 Ω
V
GS

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit
C
C
C
C
C
o(tr)
o(er)
R
Input capacitance
iss
V
Output capacitance - 223 - pF
oss
Reverse transfer
rss
capacitance
Equivalent
(1)
capacitance time
= 100 V, f = 1 MHz,
DS
VGS = 0
= 0, VDS = 0 to 520 V - 778 - pF
V
GS
- 8825 - pF
-11-pF
related
Equivalent
(2)
capacitance energy
= 0, VDS = 0 to 520 V - 202 - pF
V
GS
related
G
Intrinsic gate resistance
f = 1 MHz open drain - 1.79 - Ω
Total gate charge
g
Gate-source charge - 51 - nC
gs
Gate-drain charge - 84 - nC
gd
is a constant capacitance value that gives the same charging time as C
.
DSS
is a constant capacitance value that gives the same stored energy as C
.
DSS
VDD = 520 V, ID = 42 A, VGS = 10 V
(see Figure 16)
1. C
2. C
Q
Q
Q
o(tr)
to 80% V
o(er)
to 80% V
4/14 DocID025974 Rev 1
-204-nC
while VDS is rising from 0
oss
while VDS is rising from 0
oss
STE88N65M5 Elect ri cal characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(v)
t
r(v)
t
f(i)
t
c(off)
Voltage delay time
Voltage rise time - 16 - ns
Current fall time - 29 - ns
Crossing time - 56 - ns
= 400 V, ID = 56 A,
V
DD
R
= 4.7 Ω, V
G
GS
(see Figure 17) (see Figure 20)
= 10 V
-141-ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
SDM
V
SD
Q
I
RRM
Q
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Source-drain current - 88 A
SD
(1)
Source-drain current (pulsed) - 352 A
(2)
Forward on voltage ISD = 88 A, VGS = 0 - 1.5 V
t
Reverse recovery time
rr
Reverse recovery charge - 14 μC
rr
I
= 84 A, di/dt = 100 A/μs
SD
V
= 100 V (see Figure 17)
DD
- 544 ns
Reverse recovery current - 50 A
t
Reverse recovery time
rr
Reverse recovery charge - 20 μC
rr
Reverse recovery current - 60 A
I
= 84 A, di/dt = 100 A/μs
SD
VDD = 100 V, Tj = 150 °C
(see Figure 17)
- 660 ns
DocID025974 Rev 1 5/14
14
Electrical charac teristics STE88N65M5
I
D
100
10
1
0.1
0.1
1
100
V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
100µs
1ms
10µs
Tj=150°C Tc=25°C Single pulse
10ms
AM18113v1
I
D
50
0
0
10
V
DS
(V)
20
(A)
5
15
25
100
8V
6V
7V
VGS=10V
150
200
250
AM10393v1
V
(BR)DSS
-50
0
T
J
(°C)
(norm)
-25
75
25
50
100
0.92
0.94
0.96
0.98
1.00
1.04
1.06
1.02
I
D
= 1mA
1.08
AM10399v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

I
D
(A)
225
200
175
150
125
100
75
50
25
AM10394v1
V
DS
=30V
0
3
4
5
7
6
8
V
GS
(V)
9
Figure 6. Normalized V
(BR)DSS

vs temperature Figure 7. Static drain-source on-resistance

6/14 DocID025974 Rev 1
R
DS(on)
0.026
0.024
0.022
0.020
(Ω)
AM10396v1
V
GS
=10V
20
10
0
30
40
50
60
70 80
D
(A)
I
STE88N65M5 Elect ri cal characteristics
V
GS
6
4
2
0
0
50
Q
g
(nC)
(V)
200
8
100
150
10
VDD=520V
I
D
=42A
12
300
200
100
0
400
500
V
DS
V
DS
(V)
14
AM10395v1
V
GS(th)
1.00
0.90
0.80
0.70
-50
0
T
J
(°C)
(norm)
-25
1.10
75
25
50
100
I
D
= 250µA
AM08899v1
V
SD
0
20
I
SD
(A)
(V)
10
50
30
40
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ=-50°C
T
J
=150°C
TJ=25°C
AM04974v1

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

C
(pF)
100000
AM10397v1
Figure 10. Normalized gate threshold voltage vs
temperature
10000
1000
100
10
1
0.1
1
10
100
V
DS
(V)
Figure 11. Normalized on-resistance vs
temperature
125
AM05501v2
T
J
R
DS(on)
(norm)
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50
-25
I
D
= 42 A
V
GS
0
= 10 V
25
50
75
100
Ciss
Coss
Crss
(°C)
Figure 12. Source-drain diode forward
characteristics

Figure 13. Output capacitance stored energy

600
AM10398v1
DS
(V)
V
E
oss
(µJ)
40
35
30
25
20
15
10
5
0
0
100
200
300
400
500
DocID025974 Rev 1 7/14
14
Electrical charac teristics STE88N65M5
E
0
0
20
R
G(Ω)
(μJ)
10
30
1000
2000
40
I
D=56A
V
DD=400V
Eon
Eoff
3000
V
GS=10V
T
J=25°C
AM11171v1
Figure 14. Switching losses vs gate
resistance
(1)
1. Eon including reverse recovery of a SiC diode.
8/14 DocID025974 Rev 1
STE88N65M5 Test circuits
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3 μF
V
DD
AM01469v1
VDD
47kΩ
1kΩ
47kΩ
2.7kΩ
1kΩ
12V
V
i=20V=VGMAX
2200 μF
PW
IG=CONST
100Ω
100nF
D.U.T.
V
G
AM01470v1
A
D
D.U.T.
S
B
G
25
Ω
A
A
B
B
R
G
G
FAST DIODE
D
S
L=100μH
μF
3.3
1000
μF
V
DD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID

3 Test circuits

Figure 15. Switching times test circuit for
resistive load
Figure 17. Test circuit for inductive load
switching and diode recovery times

Figure 16. Gate charge test circuit

Figure 18. Unclamped inductive load test circuit

L
VD
2200
μF
3.3
μF
VDD

Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

ID
Vi
D.U.T.
Pw
AM01471v1
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DocID025974 Rev 1 9/14
14
Package mechanical data STE88N65M5

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
10/14 DocID025974 Rev 1
STE88N65M5 Package mechanical data
0041565_Rev_I

Figure 21. ISOTOP drawing

DocID025974 Rev 1 11/14
14
Package mechanical data STE88N65M5

Table 8. ISOTOP mechanical data

mm
Dim.
Min. Typ. Max.
A 11.80 12.20
A1 8.90 9.10
B7.80 8.20
C0.75 0.85
C2 1.95 2.05
D 37.80 38.20
D1 31.50 31.70
E 25.15 25.50
E1 23.85 24.15
E2 24.80
G 14.90 15.10
G1 12.60 12.80
G2 3.50 4.30
F4.10 4.30
F1 4.60 5
φP4 4.30
P1 4 4.40
S 30.10 30.30
12/14 DocID025974 Rev 1
STE88N65M5 Revision history

5 Revision history

T able 9. Document revision history

Date Revision Changes
24-Feb-2014 1 Initial release.
DocID025974 Rev 1 13/14
14
STE88N65M5
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14/14 DocID025974 Rev 1
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