This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codeMarkingPackagesPackaging
STE88N65M588N65M5ISOTOPTube
February 2014DocID025974 Rev 11/14
This is information on a product in full production.
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristicsFigure 5. Transfer characteristics
I
D
(A)
225
200
175
150
125
100
75
50
25
AM10394v1
V
DS
=30V
0
3
4
5
7
6
8
V
GS
(V)
9
Figure 6. Normalized V
(BR)DSS
vs temperatureFigure 7. Static drain-source on-resistance
6/14DocID025974 Rev 1
R
DS(on)
0.026
0.024
0.022
0.020
(Ω)
AM10396v1
V
GS
=10V
20
10
0
30
40
50
60
70 80
D
(A)
I
STE88N65M5Elect ri cal characteristics
V
GS
6
4
2
0
0
50
Q
g
(nC)
(V)
200
8
100
150
10
VDD=520V
I
D
=42A
12
300
200
100
0
400
500
V
DS
V
DS
(V)
14
AM10395v1
V
GS(th)
1.00
0.90
0.80
0.70
-50
0
T
J
(°C)
(norm)
-25
1.10
75
25
50
100
I
D
= 250µA
AM08899v1
V
SD
0
20
I
SD
(A)
(V)
10
50
30
40
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ=-50°C
T
J
=150°C
TJ=25°C
AM04974v1
Figure 8. Gate charge vs gate-source voltageFigure 9. Capacitance variations
C
(pF)
100000
AM10397v1
Figure 10. Normalized gate threshold voltage vs
temperature
10000
1000
100
10
1
0.1
1
10
100
V
DS
(V)
Figure 11. Normalized on-resistance vs
temperature
125
AM05501v2
T
J
R
DS(on)
(norm)
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50
-25
I
D
= 42 A
V
GS
0
= 10 V
25
50
75
100
Ciss
Coss
Crss
(°C)
Figure 12. Source-drain diode forward
characteristics
Figure 13. Output capacitance stored energy
600
AM10398v1
DS
(V)
V
E
oss
(µJ)
40
35
30
25
20
15
10
5
0
0
100
200
300
400
500
DocID025974 Rev 17/14
14
Electrical charac teristicsSTE88N65M5
E
0
0
20
R
G(Ω)
(μJ)
10
30
1000
2000
40
I
D=56A
V
DD=400V
Eon
Eoff
3000
V
GS=10V
T
J=25°C
AM11171v1
Figure 14. Switching losses vs gate
resistance
(1)
1. Eon including reverse recovery of a SiC diode.
8/14DocID025974 Rev 1
STE88N65M5Test circuits
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μF
V
DD
AM01469v1
VDD
47kΩ
1kΩ
47kΩ
2.7kΩ
1kΩ
12V
V
i=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
V
G
AM01470v1
A
D
D.U.T.
S
B
G
25
Ω
A
A
B
B
R
G
G
FAST
DIODE
D
S
L=100μH
μF
3.3
1000
μF
V
DD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
3 Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 16. Gate charge test circuit
Figure 18. Unclamped inductive load test circuit
L
VD
2200
μF
3.3
μF
VDD
Figure 19. Unclamped inductive waveformFigure 20. Switching time waveform
ID
Vi
D.U.T.
Pw
AM01471v1
,G
9GV
7GHOD\RII
RII
9JV
9JV
RQ
RQ
9JV,W
9GV
9GV
7ULVH
7ULVH
7FU R V V R Y HU
&RQFHSWĆZDYHIRUPĆIRUĆ,QGXFWLYHĆ/RDGĆ7XUQRIIĆ
7IDOO
7IDOO
,G
,G
$0Y
DocID025974 Rev 19/14
14
Package mechanical dataSTE88N65M5
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
10/14DocID025974 Rev 1
STE88N65M5Package mechanical data
0041565_Rev_I
Figure 21. ISOTOP drawing
DocID025974 Rev 111/14
14
Package mechanical dataSTE88N65M5
Table 8. ISOTOP mechanical data
mm
Dim.
Min.Typ.Max.
A11.8012.20
A18.909.10
B7.808.20
C0.750.85
C21.952.05
D37.8038.20
D131.5031.70
E25.1525.50
E123.8524.15
E224.80
G14.9015.10
G112.6012.80
G23.504.30
F4.104.30
F14.605
φP44.30
P144.40
S30.1030.30
12/14DocID025974 Rev 1
STE88N65M5Revision history
5 Revision history
T able 9. Document revision history
DateRevisionChanges
24-Feb-20141Initial release.
DocID025974 Rev 113/14
14
STE88N65M5
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