STMicroelectronics STD70N02L, STD70N02L-1 Technical data

STD70N02L

STD70N02L-1

N-channel 24V - 0.0068Ω - 60A - DPAK - IPAK

STripFET™ III Power MOSFET

General features

Type	VDSS	RDS(on)	ID
STD70N02L	24V	<0.008Ω	60A
STD70N02L-1	24V	<0.008Ω	60A

■RDS(ON) * Qg industry’s benchmark

■Conduction losses reduced

■Switching losses reduced

■Low threshold device

Description

This series of products utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.

Applications

■ Switching application

3 3

	1	2
		1

DPAK IPAK

Internal schematic diagram

Order codes

Part number	Marking	Package	Packaging
STD70N02L-1	D70N02L	IPAK	Tube
STD70N02L	D70N02L	DPAK	Tape & reel

May 2006

Rev 4

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www.st.com

Contents	STD70N02L - STD70N02L-1

Contents

1	Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 3
2	Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		4
	2.1	Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . .	6
3	Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		11
4	Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		12
5	Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		15
6	Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		16

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STD70N02L - STD70N02L-1	Electrical ratings

1 Electrical ratings

	Table 1.	Absolute maximum ratings
	Symbol	Parameter	Value	Unit
	Vspike (1)	Drain-source voltage rating	30	V
	VDS	Drain-source voltage (VGS = 0)	24	V
	VDGR	Drain-gate voltage (RGS = 20kΩ)	24	V
	VGS	Gate-source voltage	± 20	V
	ID (2)	Drain current (continuous) at TC = 25°C	60	A
	ID	Drain current (continuous) at TC = 100°C	42	A
	(3)	Drain current (pulsed)	240	A
	IDM
	PTOT	Total dissipation at TC = 25°C	60	W
		Derating factor	0.4	W/°C
	(4)	Single pulse avalanche energy	280	mJ
	EAS
	Tj	Operating junction temperature	-55 to 175	°C
	Tstg	Storage temperature

1.Guaranted when external Rg=4.7Ω and Tf<Tfmax

2.Value limited by wire bonding

3.Pulse width limited by safe operating area

4.Starting Tj =25°C, Id = 30A, VDD = 15V

Table 2.	Thermal data
Symbol	Parameter	Value	Unit
Rthj-case	Thermal resistance junction-case Max	2.5	°C/W
Rthj-amb	Thermal resistance junction-amb Max	100	°C/W
Tl	Maximum lead temperature for soldering purpose	275	°C

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Electrical characteristics	STD70N02L - STD70N02L-1

2 Electrical characteristics

(Tcase =25°C unless otherwise specified)
Table 3.		On /off states
Symbol		Parameter			Test conditions		Min.	Typ.	Max.	Unit
V	(BR)DSS	Drain-source breakdown	I	D	= 25mA, V	= 0	24			V
		voltage				GS
	IDSS	Zero gate voltage drain	VDS = 20V,						1	µA
		current (VGS = 0)	VDS = 20V,Tc = 125°C						10	µA
	IGSS	Gate body leakage	VGS = ±20V						±100	nA
		current (VDS = 0)
VGS(th)		Gate threshold voltage	VDS= VGS, ID = 250µA				1	1.8		V
RDS(on)		Static drain-source on	VGS= 10V, ID= 30A					0.0068	0.008	Ω
		resistance	VGS= 5V, ID= 15A					0.090	0.014	Ω

Table 4.	Dynamic
Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
g (1)	Forward	VDS =15V, ID = 30A		27		S
	transconductance
fs
Ciss	Input capacitance			1400		pF
	Output capacitance
Coss		VDS =16V, f=1MHz, VGS=0		400		pF
	Reverse transfer
Crss				55		pF
	capacitance
Qg	Total gate charge	VDD=10V, ID = 60A		24	32	nC
Qgs	Gate-source charge	VGS =10V		5		nC
Qgd	Gate-drain charge	(see Figure 15)		3.4		nC
		f=1MHz Gate DC Bias =0
RG	Gate input resistance	test signal level =20mV	0.5	1.5	3	Ω
		open drain
(2)	Output charge	VDS =16V, VGS =0V		9.4		nC
QOSS

1.Pulsed: pulse duration = 300µs, duty cycle 1.5%

2.Qoss.= Coss * D Vin, Coss = Cgd + Cgd. (see Appendix A)

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STD70N02L - STD70N02L-1

Electrical characteristics

Table 5.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

Turn-on delay time

VDD=10V, ID=30A,

10

ns

tr

Rise time

130

ns

RG=4.7Ω, VGS=10V

td(off)

Turn-off delay time

27

ns

(see Figure 17)

tf

Fall time

16

21.6

ns

Table 6.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

50

A

ISDM

Source-drain current (pulsed)

200

A

(1)

Forward on voltage

ISD=30A, VGS=0

1.3

V

VSD

trr

Reverse recovery time

I

=60A, di/dt = 100A/µs,

36

ns

SD

Qrr

Reverse recovery charge

VDD=20V, Tj=150°C

36

nC

IRRM

Reverse recovery current

(see Figure 20)

2

A

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

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Electrical characteristics	STD70N02L - STD70N02L-1

2.1Electrical characteristics (curves)

Figure 1. Safe operating area

Figure 2. Thermal impedance

Figure 3. Output characterisics				Figure 4. Transfer characteristics

Figure 5. Transconductance						Figure 6. Static drain-source on resistance

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