STMicroelectronics STD70N02L, STD70N02L-1 Technical data
N-channel 24V - 0.0068Ω - 60A - DPAK - IPAK
3
3
General features
Type V
STD70N02L 24V <0.008Ω 60A
STD70N02L-1 24V <0.008Ω 60A
DSS
R
DS(on)
STD70N02L
STD70N02L-1
STripFET™ III Power MOSFET
I
D
■ R
■ Conduction losses reduced
■ Switching losses reduced
■ Low threshold device
* Qg industry’s benchmark
DS(ON)
Description
This series of products utilizes the latest
advanced design rules of ST’s proprietary
STripFET™ technology. This is suitable for the
most demanding DC-DC converter application
where high efficiency is to be achieved.
Applications
■ Switching application
1
DP AK
IPAK
Internal schematic diagram
2
1
Order codes
Part number Marking Package Packaging
STD70N02L-1 D70N02L IPAK Tube
STD70N02L D70N02L DPAK Tape & reel
May 2006 Rev 4 1/17
www.st.com
17
Contents STD70N02L - STD70N02L-1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
STD70N02L - STD70N02L-1 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
(1)
V
spike
V
V
DGR
V
I
D
I
DM
P
E
AS
T
1. Guaranted when external Rg=4.7Ω and Tf<Tfmax
2. Value limited by wire bonding
3. Pulse width limited by safe operating area
4. Starting Tj =25°C, Id = 30A, VDD = 15V
Drain-sour ce voltage rating 30 V
Drain-sour ce voltage (VGS = 0)
DS
Drain-gate voltage (RGS = 20kΩ)
Gate-source voltage ± 20 V
GS
(2)
Drain current (continuous) at TC = 25°C
I
Drain current (continuous) at TC = 100°C
D
(3)
Drain current (pulsed) 240 A
Total dissipation at TC = 25°C
TOT
24 V
24 V
60 A
42 A
60 W
Derati ng fa c to r 0.4 W/°C
(4)
Single pulse ava lanche energy 280 mJ
T
Operating junction temperature
j
St orage temperature
stg
-55 to 175 °C
Table 2. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resist ance junction-ca se M ax 2.5 °C/W
Rthj-amb Thermal resistance junction-amb Max 100 °C/W
T
Maximum lead temper ature for soldering purpose 275 °C
l
3/17
Electrical characteristics STD70N02L - STD70N02L-1
2 Electrical characteristics
(Tcase =25°C unless otherwise specified)
Tab le 3. On /off states
Symbol Parameter Test conditions Min. T yp. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source break down
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage
current (V
DS
= 0)
Gate threshold voltage
St ati c drain-source on
resistance
I
= 25mA, VGS= 0
D
V
= 20V,
DS
= 20V,Tc = 125°C
V
DS
= ±20V
V
GS
V
= VGS, ID = 250µA
DS
V
= 10V, ID= 30A
GS
V
= 5V, ID= 15A
GS
24 V
1
10µAµA
±100 nA
11.8 V
0.0068
0.090
0.008
0.014
Table 4. Dynamic
Symbol Parameter T est conditions Min. T yp. Max. Unit
Forward
(1)
g
fs
C
C
C
Q
Q
Q
R
Q
OSS
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Q
oss.
iss
oss
rss
gs
gd
transconductance
Input capacit ance
Output capacitance
Reverse transfer
capacitance
g
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
G
(2)
Output charge
= C
* D Vin, C
oss
= Cgd + C
oss
V
=15V, ID = 30A
DS
=16V, f=1MHz, VGS=0
V
DS
=10V, ID = 60A
V
DD
=10V
V
GS
(see Figure 15)
f=1MHz Gate DC Bias =0
test signal level =20m V
open drain
V
=16V, V
DS
(see Appendix A)
gd.
GS
=0V
27 S
1400
400
55
24
32 nC
5
3.4
0.5 1.5 3 Ω
9.4 nC
Ω
Ω
pF
pF
pF
nC
nC
4/17
STD70N02L - STD70N02L-1 Electrical characteristics
Table 5. S wit ching times
Symbol Parameter Test condi ti ons Min. Typ. Max Unit
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off delay time
t
Fall time
f
=10V, ID=30A,
V
DD
R
=4.7Ω, VGS=10V
G
(see Figure 17)
10
130
27
16 21.6
Table 6. S ource drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
SDM
V
SD
Q
I
RRM
1. Puls ed: pulse duration = 300µs, duty cycle 1. 5%
Source-drain current
SD
Source-drain current (pulsed)
(1)
Forward on voltage
t
rr
Reverse rec overy time
Reverse recovery charge
rr
Reverse rec overy current
I
=30A, VGS=0
SD
=60A, di/dt = 100A/µs,
I
SD
V
=20V, Tj=150°C
DD
(see Figure 20)
50
200AA
1.3 V
36
36
2
ns
ns
ns
ns
ns
nC
A
5/17
Electrical characteristics STD70N02L - STD70N02L-1
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Fig u re 3. Outpu t characte risics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
6/17
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