STMicroelectronics STD60NF06 Technical data

STD60NF06

N-CHANNEL 60V - 0.014Ω - 60A DPAK STripFET™ II POWER MOSFET

TYPE	VDSS	RDS(on)	ID
STD60NF06	60 V	< 0.016 Ω	60A

■TYPICAL RDS(on) = 0.014Ω

■EXCEPTIONAL dv/dt CAPABILITY

■100% AVALANCHE TESTED

■APPLICATION ORIENTED CHARACTERIZATION

DESCRIPTION

This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

APPLICATIONS

■HIGH-EFFICIENCY DC-DC CONVERTERS

■UPS AND MOTOR CONTROL

■AUTOMOTIVE

3

1

DPAK

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter		Value	Unit
VDS	Drain-source Voltage (VGS = 0)		60	V
VDGR	Drain-gate Voltage (RGS = 20 kΩ)		60	V
VGS	Gatesource Voltage		± 20	V
ID	Drain Current (continuous) at TC = 25°C		60	A
ID	Drain Current (continuous) at TC = 100°C		42	A
IDM (l)	Drain Current (pulsed)		240	A
PTOT	Total Dissipation at TC = 25°C		110	W
	Derating Factor		0.73	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope		4	V/ns
Tstg	Storage Temperature		– 55 to 175	°C
Tj	Operating Junction Temperature
(●) Pulse width limited by safe operating area		(1) ISD≤ 60A, di/dt≤200 A/μs, VDD≤ 24V, Tj≤TjMAX

October 2002

1/9

STD60NF06

THERMAL DATA

Rthj-case	Thermal Resistance Junction-case	Max	1.36	°C/W
Rthj-amb	Thermal Resistance Junction-ambient	Max	100	°C/W
Tl	Maximum Lead Temperature For Soldering Purpose		275	°C

AVALANCHE CHARACTERISTICS

Symbol	Parameter	Max Value	Unit
IAR	Avalanche Current, Repetitive or Not-Repetitive	30	A
	(pulse width limited by Tj max)
EAS	Single Pulse Avalanche Energy	350	mJ
	(starting Tj = 25 °C, I D = IAR, VDD = 30 V)

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA, VGS = 0	60			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating, TC = 125 °C			10	µA
IGSS	Gate-body Leakage	VGS = ± 20V			±100	nA
	Current (VDS = 0)

ON (1)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250 µA	2		4	V
RDS(on)	Static Drain-source On	VGS = 10 V, ID = 30 A		0.014	0.016	Ω
	Resistance

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS =15 V , ID = 30 A		20		S
Ciss	Input Capacitance	VDS = 25 V, f = 1 MHz, VGS = 0		1810		pF
Coss	Output Capacitance			360		pF
Crss	Reverse Transfer			125		pF
	Capacitance

2/9

STD60NF06

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 30	V, ID = 30 A		16		ns
tr	Rise Time	RG = 4.7Ω , VGS = 10 V			108		ns
		(see test circuit, Figure 3)
Qg	Total Gate Charge	VDD = 48	V, ID =60 A		49	66	nC
		VGS = 10	V
Qgs	Gate-Source Charge				18		nC
Qgd	Gate-Drain Charge				14		nC

SWITCHING OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(off)	Turn-off-Delay Time	VDD = 30 V, ID = 30 A,		43		ns
tf	Fall Time	RG = 4.7Ω, VGS = 10 V		20		ns
		(see test circuit, Figure 3)
td(off)	Off-voltage Rise Time	Vclamp =48 V, ID = 60 A		40		ns
tf	Fall Time	RG = 4.7Ω, VGS = 10 V		12		ns
tc	Cross-over Time	(see test circuit, Figure 3)		21		ns

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ISD	Source-drain Current					60	A
ISDM (2)	Source-drain Current (pulsed)					240	A
VSD (1)	Forward On Voltage	ISD = 60	A, VGS = 0			1.3	V
trr	Reverse Recovery Time	ISD = 60	A, di/dt = 100A/µs,		73		ns
Qrr	Reverse Recovery Charge	VDD = 25V, Tj = 150°C			182		nC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)			5		A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.

3/9