STMicroelectronics STD60NF06 Technical data
STD60NF06
N-CHANNEL 60V - 0.014Ω - 60A DPAK
STripFET™ II POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STD60NF06 60 V < 0.016 Ω 60A
■ TYPICAL R
■ EXCEPTIONAL dv/dt CAPABILI TY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
(on) = 0.014Ω
DS
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated D C-DC
converters for T el ecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
■ AUTOMOTIVE
3
1
DPAK
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
(l)
Drain Current (pulsed) 240 A
Total Dissipation at TC = 25°C
60 A
42 A
110 W
Derating Factor 0.73 W/°C
Storage Temperature
Operating Junction Temperature
(1) ISD≤ 60A, di/ dt ≤ 200 A/µs, VDD≤ 24V, Tj≤T
– 55 to 175 °C
jMAX
1/9October 2002
STD60NF06
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1.36 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Maximum Lead Temperature For Soldering Purpose 275 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID = IAR, VDD = 30 V)
j
30 A
350 mJ
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA, VGS = 0 60 V
Breakdown Voltage
ON
I
I
GSS
(1)
DSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
VDS = Max Rating, TC = 125 °C
V
= ± 20V ±100 nA
GS
1µA
10 µA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
= VGS, ID = 250 µA
DS
VGS = 10 V, ID = 30 A
24V
0.014 0.016 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS =15 V , ID= 30 A 20 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 360 pF
Reverse Transfer
Capacitance
V
= 25 V, f = 1 MHz, VGS = 0
DS
1810 pF
125 pF
2/9
STD60NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 108 ns
Total Gate Charge VDD = 48 V, ID =60 A
Gate-Source Charge 18 nC
Gate-Drain Charge 14 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
d(off)
t
f
t
f
t
c
Turn-off-Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 60 A
(2)
Source-drain Current (pulsed) 240 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 30 V, ID = 30 A
DD
R
= 4.7Ω , VGS = 10 V
G
(see test circuit, Figure 3)
VGS = 10 V
VDD = 30 V, ID = 30 A,
RG=4.7Ω, V
GS
= 10 V
(see test circuit, Figure 3)
Vclamp =48 V, ID = 60 A
R
=4.7Ω, V
G
GS
= 10 V
(see test circuit, Figure 3)
ISD = 60 A, VGS = 0
= 60 A, di/dt = 100A/µs,
I
SD
V
= 25V, Tj = 150°C
DD
(see test circuit, Figure 5)
16 ns
49 66 nC
43
20
40
12
21
1.3 V
73
182
5
ns
ns
ns
ns
ns
ns
nC
A
3/9
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