IPAK
TAB
1
2
3
TAB
1
3
2
DPAK
D(2, TAB)
G(1)
S(3)
AM01475V1
STD5NK40Z-1, STD5NK40ZT4
Datasheet
N-channel 400 V, 1.45 Ω typ., 3 A SuperMESH™ Power MOSFETs in
IPAK and DPAK packages
Features
Product status link
STD5NK40Z-1
STD5NK40ZT4
Order codes
STD5NK40Z-1
STD5NK40ZT4 DPAK
V
DS
400 V 1.80 Ω 45 W
R
DS(on)
max. P
TOT
Package
IPAK
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
Applications
• Switching applications
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.
DS2854 - Rev 4 - September 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Symbol Parameter Value Unit
V
DS
V
GS
I
D
I
D
IDM
P
TOT
dv/dt
ESD Gate-source human body model (C = 100 pF, R = 1.5 kΩ) 2.8 kV
T
T
stg
1. Pulse width limited by safe operating area.
2. ISD ≤ 3 A, di/dt ≤ 200 A/µs, VDD ≤ V
Drain-source voltage 400 V
Gate-source voltage ±30 V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
(1)
Drain current (pulsed) 12 A
Total dissipation at TC = 25 °C
(2)
Peak diode recovery voltage slope 4.5 V/ns
Operating junction temperature range
j
Storage temperature range
Table 1. Absolute maximum ratings
.
(BR)DSS
STD5NK40Z-1, STD5NK40ZT4
Electrical ratings
3 A
1.9 A
45 W
-55 to 150 °C
Table 2. Thermal data
SymbolParameter
R
thj-case
R
thj-amb
R
thj-pcb
1. When mounted on an 1-inch² FR-4, 2oz Cu board.
Thermal resistance junction-case 2.78 °C/W
Thermal resistance junction-ambient 100 °C/W
(1)
Thermal resistance junction-pcb 50 °C/W
Table 3. Avalanche characteristics
Symbol
I
AR
E
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Parameter Value Unit
Value
Unit
IPAK DPAK
3 A
130 mJ
DS2854 - Rev 4
page 2/23
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
1. Defined by design, not subject to production test.
Drain-source breakdown
voltage
Zero gate voltage drain
current
Gate-body leakage current
Gate threshold voltage
Static drain-source on
resistance
Table 4. On/off states
VGS = 0 V, ID = 1 mA
VGS = 0 V, VDS = 400 V
VGS = 0 V, VDS = 400 V,
TC = 125 °C
VDS = 0 V, VGS = ±20 V
VDS = VGS, ID = 50 µA
VGS = 10 V, ID = 1.5 A
(1)
STD5NK40Z-1, STD5NK40ZT4
Electrical characteristics
400 V
1 µA
50 µA
±10 µA
3 3.75 4.5 V
1.45 1.80 Ω
C
1. C
Table 5. Dynamic
Symbol
C
iss
C
oss
C
rss
oss eq.
Q
Q
gs
Q
gd
oss eq.
80% V
Input capacitance
Output capacitance 57
Reverse transfer capacitance 11.5
(1)
Equivalent output capacitance
Total gate charge
g
Gate-source charge 2.8
Gate-drain charge 5.8
is defined as a constant equivalent capacitance giving the same charging time as C
.
DSS
Parameter Test conditions Min. Typ. Max. Unit
VDS = 25 V, f = 1 MHz,
VGS = 0 V
VGS = 0 V, VDS = 0 V to 320 V
VDD = 320 V, ID = 3 A,
VGS = 0 to 10 V
(see Figure 14. Test circuit for
gate charge behavior)
Table 6. Switching times
Symbol
t
d(on)
t
r
t
d(off)
t
f
t
r(Voff)
t
f
t
c
Turn-on delay time
Rise time 6
Turn-off delay time 22.5
Fall time 11
Off-voltage rise time
Fall time 7.5
Cross-over time 14.5
Parameter Test conditions Min. Typ. Max. Unit
VDD = 200 V, ID = 1.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13. Test circuit for
resistive load switching times
and Figure 18. Switching time
waveform)
VDD = 320 V, ID = 3 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15. Test circuit for
inductive load switching and
diode recovery times)
305
-
- 44
11.7 17
-
oss
9.2
-
8.5
pF
nC
when VDSincreases from 0 to
- ns
DS2854 - Rev 4
page 3/23
STD5NK40Z-1, STD5NK40ZT4
Electrical characteristics
Table 7. Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD
t
rr
Q
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)GSO
Source-drain current - 3
(1)
Source-drain current (pulsed) - 12
(2)
Forward on voltage
Reverse recovery time
Reverse recovery charge - 464 nC
rr
ISD = 3 A, VGS = 0 V
ISD = 3 A, di/dt = 100 A/µs
VDD = 40 V, Tj = 150 °C
- 1.6 V
- 145 ns
(see Figure 15. Test circuit for
Reverse recovery current - 6.4 A
inductive load switching and
diode recovery times)
Table 8. Gate-source Zener diode
Gate-source breakdown
voltage
IGS = ±1 mA, ID = 0 A
±30 - - V
A
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.
DS2854 - Rev 4
page 4/23
2.1 Electrical characteristics (curves)
STD5NK40Z-1, STD5NK40ZT4
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 2. Thermal impedance
DS2854 - Rev 4
Figure 5. Capacitance variations Figure 6. Gate charge vs gate-source voltage
page 5/23
V
(BR)DSS
(norm)
STD5NK40Z-1, STD5NK40ZT4
Electrical characteristics (curves)
Figure 7. Normalized gate threshold voltage vs
temperature
Figure 8. Static drain-source on resistance
Figure 9. Source-drain diode forward characteristic Figure 10. Maximum avalanche energy vs temperature
DS2854 - Rev 4
Figure 11. Normalized V
(BR)DSS
vs temperature
Figure 12. Normalized on resistance vs temperature
page 6/23
3 Test circuits
AM01468v1
V
D
R
G
R
L
D.U.T.
2200
μF
V
DD
3.3
μF
+
pulse width
V
GS
AM01469v1
47 kΩ
1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST
100 Ω
100 nF
D.U.T.
+
pulse width
V
GS
2200
μF
V
G
V
DD
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
A
A
B
B
R
G
G
D
S
100 µH
µF
3.3
1000
µF
V
DD
D.U.T.
+
_
+
fast
diode
AM01471v1
V
D
I
D
D.U.T.
L
V
DD
+
pulse width
V
i
3.3
µF
2200
µF
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
0
V
GS
90%
V
DS
90%
10%
90%
10%
10%
t
on
t
d(on)
t
r
0
t
off
t
d(off)
t
f
STD5NK40Z-1, STD5NK40ZT4
Test circuits
Figure 13. Test circuit for resistive load switching times
Figure 15. Test circuit for inductive load switching and
diode recovery times
Figure 14. Test circuit for gate charge behavior
Figure 16. Unclamped inductive load test circuit
DS2854 - Rev 4
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
page 7/23
4 Package information
STD5NK40Z-1, STD5NK40ZT4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
®
DS2854 - Rev 4
page 8/23
4.1 IPAK (TO-251) type A package information
0068771_IK_typeA_rev14
Figure 19. IPAK (TO-251) type A package outline
STD5NK40Z-1, STD5NK40ZT4
IPAK (TO-251) type A package information
DS2854 - Rev 4
page 9/23
STD5NK40Z-1, STD5NK40ZT4
IPAK (TO-251) type A package information
Table 9. IPAK (TO-251) type A package mechanical data
Dim.
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
b 0.64 0.90
b2 0.95
b4 5.20 5.40
B5 0.30
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
E 6.40 6.60
e 2.28
e1 4.40 4.60
H 16.10
L 9.00 9.40
L1 0.80 1.20
L2 0.80 1.00
V1 10°
mm
DS2854 - Rev 4
page 10/23
4.2 IPAK (TO-251) type C package information
0068771_IK_typeC_rev14
Figure 20. IPAK (TO-251) type C package outline
STD5NK40Z-1, STD5NK40ZT4
IPAK (TO-251) type C package information
DS2854 - Rev 4
page 11/23
STD5NK40Z-1, STD5NK40ZT4
IPAK (TO-251) type C package information
Table 10. IPAK (TO-251) type C package mechanical data
Dim.
Min. Typ. Max.
A 2.20 2.30 2.35
A1 0.90 1.00 1.10
b 0.66 0.79
b2 0.90
b4 5.23 5.33 5.43
c 0.46 0.59
c2 0.46 0.59
D 6.00 6.10 6.20
D1 5.20 5.37 5.55
E 6.50 6.60 6.70
E1 4.60 4.78 4.95
e 2.20 2.25 2.30
e1 4.40 4.50 4.60
H 16.18 16.48 16.78
L 9.00 9.30 9.60
L1 0.80 1.00 1.20
L2 0.90 1.08 1.25
θ1 3° 5° 7°
θ2 1° 3° 5°
mm
DS2854 - Rev 4
page 12/23
4.3 DPAK (TO-252) type A package information
0068772_A_25
Figure 21. DPAK (TO-252) type A package outline
STD5NK40Z-1, STD5NK40ZT4
DPAK (TO-252) type A package information
DS2854 - Rev 4
page 13/23
STD5NK40Z-1, STD5NK40ZT4
DPAK (TO-252) type A package information
Table 11. DPAK (TO-252) type A mechanical data
Dim.
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 4.95 5.10 5.25
E 6.40 6.60
E1 4.60 4.70 4.80
e 2.159 2.286 2.413
e1 4.445 4.572 4.699
H 9.35 10.10
L 1.00 1.50
(L1) 2.60 2.80 3.00
L2 0.65 0.80 0.95
L4 0.60 1.00
R 0.20
V2 0° 8°
mm
DS2854 - Rev 4
page 14/23
4.4 DPAK (TO-252) type C package information
0068772_C_25
Figure 22. DPAK (TO-252) type C package outline
STD5NK40Z-1, STD5NK40ZT4
DPAK (TO-252) type C package information
DS2854 - Rev 4
page 15/23
STD5NK40Z-1, STD5NK40ZT4
DPAK (TO-252) type C package information
Table 12. DPAK (TO-252) type C mechanical data
Dim.
Min. Typ. Max.
A 2.20 2.30 2.38
A1 0.90 1.01 1.10
A2 0.00 0.10
b 0.72 0.85
b4 5.13 5.33 5.46
c 0.47 0.60
c2 0.47 0.60
D 6.00 6.10 6.20
D1 5.25
E 6.50 6.60 6.70
E1 4.70
e 2.186 2.286 2.386
H 9.80 10.10 10.40
L 1.40 1.50 1.70
L1 2.90 REF
L2 0.90 1.25
L3 0.51 BSC
L4 0.60 0.80 1.00
L6 1.80 BSC
θ1 5° 7° 9°
θ2 5° 7° 9°
V2 0° 8°
mm
DS2854 - Rev 4
page 16/23
FP_0068772_25_C
STD5NK40Z-1, STD5NK40ZT4
DPAK (TO-252) type C package information
Figure 23. DPAK (TO-252) recommended footprint (dimensions are in mm)
DS2854 - Rev 4
page 17/23
4.5 DPAK (TO-252) packing information
P1
A0
D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. only
including draft and
radii concentric around B0
AM08852v1
Top cover
tape
Figure 24. DPAK (TO-252) tape outline
STD5NK40Z-1, STD5NK40ZT4
DPAK (TO-252) packing information
DS2854 - Rev 4
page 18/23
A
D
B
Full radius
Tape slot
in core for
tape start
2.5mm min.width
G measured
at hub
C
N
40mm min.
access hole
at slot location
T
AM06038v1
STD5NK40Z-1, STD5NK40ZT4
Figure 25. DPAK (TO-252) reel outline
DPAK (TO-252) packing information
Table 13. DPAK (TO-252) tape and reel mechanical data
Tape
Dim.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R 40
T 0.25 0.35
W 15.7 16.3
Min. Max. Min. Max.
mm
Dim.
Reel
mm
DS2854 - Rev 4
page 19/23
5 Ordering information
Order code Marking Package Packing
STD5NK40Z-1
STD5NK40ZT4 DPAK Tape and reel
Table 14. Order codes
D5NK40Z
STD5NK40Z-1, STD5NK40ZT4
Ordering information
IPAK Tube
DS2854 - Rev 4
page 20/23
Revision history
11-Sep-2018 4
STD5NK40Z-1, STD5NK40ZT4
Table 15. Document revision history
Date Version Changes
The part numbers STP5NK40Z and STP5NK40ZFP have been moved to a
separate datasheet.
Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and
Section 4 Package information.
Minor text changes.
DS2854 - Rev 4
page 21/23
STD5NK40Z-1, STD5NK40ZT4
Contents
Contents
1 Electrical ratings ..................................................................2
2 Electrical characteristics...........................................................3
2.1 Electrical characteristics (curves) .................................................5
3 Test circuits .......................................................................7
4 Package information...............................................................8
4.1 IPAK (TO-251) type A package information .........................................8
4.2 IPAK (TO-251) type C package information........................................10
4.3 DPAK (TO-252) type A package information .......................................12
4.4 DPAK (TO-252) type C package information .......................................14
4.5 DPAK (TO-252) packing information..............................................17
5 Ordering information .............................................................20
Revision history .......................................................................21
DS2854 - Rev 4
page 22/23
STD5NK40Z-1, STD5NK40ZT4
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© 2018 STMicroelectronics – All rights reserved
DS2854 - Rev 4
page 23/23
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