STMicroelectronics STD4NK50ZD, STD4NK50ZD-1, STF4NK50ZD, STP4NK50ZD Technical data

STD4NK50ZD - STD4NK50ZD-1

STF4NK50ZD - STP4NK50ZD

N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH™ Power MOSFET

General features
	Type	VDSS	RDS(on)	ID	Pw			3
	STD4NK50ZD-1	500V	<2.7Ω	3A	45W			1
	STD4NK50ZD	500V	<2.7Ω	3A	45W	3		DPAK
						2
						1
	STF4NK50ZD	500V	<2.7Ω	3A	20W	TO-220
	STP4NK50ZD	500V	<2.7Ω	3A	45W
■	100% avalanche tested
■ Extremely high dv/dt capability							3	3
						2		2
	Gate charge minimized					1		1
■
						IPAK		TO-220FP

■Very low intrinsic capacitances

■Very good manufacturing repeability

Description	Internal schematic diagram

The fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and outstanding dc/dt capability with a Fast body-drain recovery diode. Such series complements the FDmesh™ advanced tecnology.

Applications

■ Switching application

Order codes

Part number	Marking	Package	Packaging
STD4NK50ZD-1	D4NK50ZD-1	IPAK	Tube
STD4NK50ZD	D4NK50ZD	DPAK	Tape & reel
STF4NK50ZD	F4NK50ZD	TO-220FP	Tube
STP4NK50ZD	P4NK50ZD	TO-220	Tube

April 2006

Rev 3

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Contents	STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD

Contents

1	Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 3
2	Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		5
	2.1	Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . .	6
3	Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		10
4	Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		11
5	Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		16
6	Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		17

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STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD	Electrical ratings

1 Electrical ratings

	Table 1.	Absolute maximum ratings
				Value
	Symbol	Parameter				Unit
			TO-220	IPAK/DPAK	TO-220FP
	VDS	Drain-source voltage (VGS = 0)		500		V
	VDGR	Drain-gate voltage (RGS = 20KΩ)		500		V
	VGS	Gate-source voltage		± 30		V
	ID	Drain current (continuous) at TC = 25°C	3	3 (1)	3 (1)	A
	ID	Drain current (continuous) at TC=100°C	1.9	1.9 (1)	1.9 (1)	A
	(2)	Drain current (pulsed)	12	12 (1)	12 (1)	A
	IDM
	PTOT	Total dissipation at TC = 25°C		45	20	W
		Derating factor		0.36	0.16	W/°C
	VESD(G-D)	Gate source ESD(HBM-C=100pF, R=1.5KΩ)		2800		V
	dv/dt(3)	Peak diode recovery voltage slope		15		V/ns
	VISO	Insulation withstand voltage (DC)	--	--	2500	V
	TJ	Operating junction temperature		-55 to 150		°C
	Tstg	Storage temperature

1.Limited only by maximum temperature allowed

2.Pulse width limited by safe operating area

3.ISD ≤3A, di/dt ≤200A/µs, VDD =80%V(BR)DSS

	Table 2.	Thermal resistance
				Value
	Symbol	Parameter				Unit
			TO-220	IPAK/DPAK	TO-220FP
	Rthj-case	Thermal resistance junction-case Max		2.78	6.25	°C/W
	Rthj-a	Thermal resistance junction-ambient Max	62.5	100	62.5	°C/W
	Tl	Maximum lead temperature for soldering		300		°C
		purpose

Table 3.	Avalanche data
Symbol		Parameter	Value	Unit
IAR		Avalanche current, repetitive or not-repetitive	3	A
		(pulse width limited by Tj Max)
EAS		Single pulse avalanche energy	120	mJ
		(starting Tj=25°C, Id=Iar, Vdd=50V)

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Electrical characteristics	STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)
Table 4.	On/off states
Symbol	Parameter	Test condictions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source breakdown	ID = 1mA, VGS= 0	500			V
	voltage
IDSS	Zero gate voltage drain	VDS = Max rating,			1	µA
	current (VGS = 0)	VDS = Max rating @125°C			50	µA
IGSS	Gate body leakage current	VGS = ±20V			±10	µA
	(VDS = 0)
VGS(th)	Gate threshold voltage	VDS= VGS, ID = 50µA	2.5	3.5	4.5	V
RDS(on)	Static drain-source on	VGS= 10V, ID= 1.5A		2.3	2.7	Ω
	resistance

Table 5.	Dynamic
Symbol	Parameter	Test condictions	Min.	Typ.	Max.	Unit
g (1)	Forward transconductance	VDS =15V, ID = 1.5A		1.5		S
fs
Ciss	Input capacitance	VDS = 25V, f = 1 MHz,		310		pF
Coss	Output capacitance			49		pF
Crss	Reverse transfer	VGS= 0		10		pF
	capacitance
(2)	Equivalent output	VGS= 0, VDS =0V to 400V		33		pF
Coss eq .	capacitance
Qg	Total gate charge	VDD= 400V, ID = 3A		12		nC
Qgs	Gate-source charge	VGS =10V		3		nC
Qgd	Gate-drain charge	(see Figure 11)		7		nC

1.Pulsed: pulse duration=300µs, duty cycle 1.5%

2.Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS

Table 6.	Switching times
Symbol	Parameter	Test condictions	Min.	Typ.	Max.	Unit
td(on)	Turn-on delay time	VDD = 250 V, ID= 1.5A,		9.5		ns
tr	Rise time			15.5		ns
		RG = 4.7Ω, VGS =10V
td(off)	Turn-off delay time			23		ns
		(see Figure 18)
tf	Fall time			22		ns

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STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD				Electrical characteristics
	Table 7.	Source drain diode
	Symbol	Parameter	Test condictions	Min	Typ.	Max	Unit
	ISD	Source-drain current				3	A
	(1)	Source-drain current (pulsed)				12	A
	ISDM
	(2)	Forward on voltage	ISD = 3A, VGS=0			1.6	V
	VSD
	trr	Reverse recovery time	ISD = 3A,		73		ns
	Qrr	Reverse recovery charge	di/dt = 100A/µs,		140		nC
	IRRM	Reverse recovery current	VDD = 34V, Tj = 25°C		3.82		A
	trr	Reverse recovery time	ISD = 3A,		118		ns
	Qrr	Reverse Recovery Charge	di/dt = 100A/µs,		260		nC
	IRRM	Reverse recovery current	VDD = 34V, Tj = 150°C		4.4		A

1.Pulse width limited by safe operating area

2.Pulsed: pulse duration=300µs, duty cycle 1.5%

Table 8.	Gate-source zener diode
Symbol	Parameter	Test condictions	Min.	Typ.	Max	Unit
(1)	Gate-source braekdown	IGS = ±1mA (open drain)	30			V
BVGSO	voltage

1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.

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Electrical characteristics	STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD

2.1Electrical characteristics (curves)

Figure 1. Safe operating area for TO-220

Figure 2. Thermal impedance for TO-220

Figure 3. Safe operating areafor TO-220FP

Figure 4. Thermal impedance for TO-220FP

Figure 5. Safe operating area for DPAK/IPAK Figure 6. Thermal impedance for DPAK/IPAK

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