STMicroelectronics STD2NK70Z, STD2NK70Z-1 User Guide

STD2NK70Z - STD2NK70Z-1

N-CHANNEL 700 V - 6 Ω - 1.6 A DPAK/IPAK

Zener-Protected SuperMESH™ MOSFET

Table 1: General Features

TYPE V

STD2NK70Z STD2NK70Z-1

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ ESD IMPRO VED CAPABILIT Y

■ 100% AVALANCHE TESTED

■ NEW HIGH VOLTAGE BENCHMARK

■ GATE CHARGE MINIMIZED

DSSRDS(on)ID

700 V 700 V

(on) = 6 Ω

DS

7 Ω 7 Ω

1.6 A

Pw

45 W 45 W

DESCRIPTION

The Supe rME SH™

series is obtained through an

extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushin g on-resis tance sign ifican tly down, special care is taken to en sur e a v er y good d v/ d t c ap ab i lity for the most demanding application. Such series compl ements ST fu ll range of high vltag e MOSFETs i n cludi n g re vol u tion ar y MDme sh™ p r od uct s.

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT

■ FLYBACK CONFIGURATION FOR BATTERY

CHARGER

Figure 1: Package

3

1

DPAK

IPAK

Figure 2: Internal Schematic Diagram

3

2

1

Table 2: Order Codes

Sales Type Marking Package Packaging

STD2NK70ZT4 D2NK70Z DPAK TAPE & REEL

STD2NK70Z-1 D2NK70Z IPAK TUBE

Rev. 2

1/12January 2005

STD2NK70Z - STD2NK70Z-1

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

V

I

DM

P

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

T

(*) Pulse width limited by safe operating area (1) I

SD

Table 4: Thermal Data

Rthj-case Thermal Resistance Junction-case Max 2.78 °C/W

Rthj-amb

Table 5: Avalanche Characteristics

Symbol Parameter Max Value Unit

I

E

Drain-source Voltage (VGS = 0)

DS

Drain-gate Voltage (RGS = 20 KΩ)

DGR

Gate- source Voltage ± 30 V

GS

Drain Current (continuous) at TC = 25°C 1.6

I

D

I

Drain Current (continuous) at TC = 100°C

D

(*)

Drain Current (pulsed) 6.4 A Total Dissipation at TC = 25°C

TOT

700 V 700 V

1A

45 W Derating Factor 0.36 W/°C Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ) 2000 V

Storage Temperature

stg

T

Max. Operating Junction Temperature

j

≤ 1.6 A, di/dt ≤ 200 A/µs, VDD ≤ V

Thermal Resistance Junction-ambient Max

T

Maximum Lead Temperature For Soldering Purpose

l

Avalanche Current, Repetitive or Not-Repetitive

AR

(pulse width limited by T Single Pulse Avalanche Energy

AS

(starting T

= 25 °C, ID = IAR, VDD = 50 V)

j

(BR)DSS

max)

j

-55 to 150 °C

100 300

1.6 A

110 mJ

A

°C/W

°C

Table 6: Gate-Source Zener D iode

Symbol Parameter Test Condition Min. Typ. Max Unit

BV

Gate-Source Breakdown

GSO

Voltage

Igs= ± 1mA (Open Drain)

30 A

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external compon ents.

2/12

STD2NK70Z - STD2NK70Z-1

TABLE 7: ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

On /Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

V

R

DS(on)

Drain-source Breakdown Voltage

Zero Gate Voltage

DSS

Drain Current (V Gate-body Leakage

GSS

Current (V Gate Threshold Voltage

GS(th)

Static Drain-source On Resistance

ID = 1 mA, VGS = 0 700 V

= Max Rating

V

= 0)

GS

= 0)

DS

= Max Rating, TC = 125°C

V

DS

= ± 20 V ± 10 µA

V

GS

V

= VGS, ID = 50 µA 3

DS

3.75

1

50

4.5 V

VGS = 10 V, ID = 0.8 A 6 7

Table 8: Dynamic

Symbol Parameter Test Condi tions Min. Typ. Max. Unit

(1) Forward Transconductance VDS = 15 V,

g

fs

C

(3) Equivalent Output

oss eq.

C C C

t

d(on)

t

d(off)

Q Q Q

Capacitance Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance Turn-on Delay Time

Rise Time

t

r

Turn-off-Delay Time Fall Time

t

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

= 0.8 A

I

D

VGS = 0 V, VDS = 0 to 560 V 17

V

= 25 V, f = 1 MHz, VGS = 0 280

DS

V

= 350 V, ID = 0.8 A,

DD

= 4.7 Ω, V

R

G

(see Figure 17)

V

= 560 V, ID = 0.8 A,

DD

= 10 V

V

GS

(see Figure 20)

GS

= 10 V

1.4 S

35

6.5

7 17 20 35

11.4

6.8

15 nC

2

µA µA

pF pF pF

nC nC

Ω

ns ns ns ns

Table 9: Source Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SDM

V

SD

Q

I

RRM

Q

I

RRM

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5% (2) Pulse width limited by safe operating area (3) C

oss eq

Source-drain Current

SD

(2)

Source-drain Current (pulsed)

(1)

Forward On Voltage

t

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

Reverse Recovery Current

t

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

Reverse Recovery Current

. is defined as a constant equivalent capacitance giving the same charging time as C

ISD = 1.6 A, VGS = 0 I

= 1.6, di/dt = 100 A/µs

SD

=50 V, Tj = 25°C

V

DD

(see Figure 18) I

= 1.6, di/dt = 100 A/µs

SD

= 50 V, Tj = 150°C

V

DD

(see Figure 18)

334 918

350

1050

when VDS increases from 0 to 80% V

oss

1.6

6.4

1.6 V

5.5

6

A A

ns

µC

A

ns

µC

A

3/12

DSS

STMicroelectronics STD2NK70Z, STD2NK70Z-1 User Guide

Table 1: General Features

Figure 1: Package

Figure 2: Internal Schematic Diagram

Table 2: Order Codes

Table 3: Absolute Maximum ratings

Table 4: Thermal Data

Table 5: Avalanche Characteristics

Table 6: Gate-Source Zener D iode

Table 8: Dynamic

Table 9: Source Drain Diode

Figure 3: Safe Operating Area

Figure 4: Output Characteristics

Figure 6: Thermal Impedance

Figure 7: Transfer Characteristics

Figure 5: Transconductance

Figure 8: Static Drain-source On Resistance