STD2NK70Z - STD2NK70Z-1
N-CHANNEL 700 V - 6 Ω - 1.6 A DPAK/IPAK
Zener-Protected SuperMESH™ MOSFET
Table 1: General Features
TYPE V
STD2NK70Z
STD2NK70Z-1
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ESD IMPRO VED CAPABILIT Y
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
DSSRDS(on)ID
700 V
700 V
(on) = 6 Ω
DS
7 Ω
7 Ω
1.6 A
1.6 A
Pw
45 W
45 W
DESCRIPTION
The Supe rME SH™
series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushin g on-resis tance sign ifican tly down, special
care is taken to en sur e a v er y good d v/ d t c ap ab i lity
for the most demanding application. Such series
compl ements ST fu ll range of high vltag e MOSFETs i n cludi n g re vol u tion ar y MDme sh™ p r od uct s.
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL
APPLICATION
■ WELDING EQUIPMENT
■ FLYBACK CONFIGURATION FOR BATTERY
CHARGER
Figure 1: Package
3
1
DPAK
IPAK
Figure 2: Internal Schematic Diagram
3
2
1
Table 2: Order Codes
Sales Type Marking Package Packaging
STD2NK70ZT4 D2NK70Z DPAK TAPE & REEL
STD2NK70Z-1 D2NK70Z IPAK TUBE
Rev. 2
1/12January 2005
STD2NK70Z - STD2NK70Z-1
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
V
V
V
I
DM
P
V
ESD(G-S)
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
T
(*) Pulse width limited by safe operating area
(1) I
SD
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max 2.78 °C/W
Rthj-amb
Table 5: Avalanche Characteristics
Symbol Parameter Max Value Unit
I
E
Drain-source Voltage (VGS = 0)
DS
Drain-gate Voltage (RGS = 20 KΩ)
DGR
Gate- source Voltage ± 30 V
GS
Drain Current (continuous) at TC = 25°C 1.6
I
D
I
Drain Current (continuous) at TC = 100°C
D
(*)
Drain Current (pulsed) 6.4 A
Total Dissipation at TC = 25°C
TOT
700 V
700 V
1A
45 W
Derating Factor 0.36 W/°C
Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ) 2000 V
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
≤ 1.6 A, di/dt ≤ 200 A/µs, VDD ≤ V
Thermal Resistance Junction-ambient Max
T
Maximum Lead Temperature For Soldering Purpose
l
Avalanche Current, Repetitive or Not-Repetitive
AR
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
(BR)DSS
max)
j
-55 to 150 °C
100
300
1.6 A
110 mJ
A
°C/W
°C
Table 6: Gate-Source Zener D iode
Symbol Parameter Test Condition Min. Typ. Max Unit
BV
Gate-Source Breakdown
GSO
Voltage
Igs= ± 1mA (Open Drain)
30 A
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external compon ents.
2/12
STD2NK70Z - STD2NK70Z-1
TABLE 7: ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
On /Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
I
V
R
DS(on)
Drain-source Breakdown
Voltage
Zero Gate Voltage
DSS
Drain Current (V
Gate-body Leakage
GSS
Current (V
Gate Threshold Voltage
GS(th)
Static Drain-source On
Resistance
ID = 1 mA, VGS = 0 700 V
= Max Rating
V
= 0)
GS
= 0)
DS
DS
= Max Rating, TC = 125°C
V
DS
= ± 20 V ± 10 µA
V
GS
V
= VGS, ID = 50 µA 3
DS
3.75
1
50
4.5 V
VGS = 10 V, ID = 0.8 A 6 7
Table 8: Dynamic
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 15 V,
g
fs
C
(3) Equivalent Output
oss eq.
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Capacitance
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
Turn-on Delay Time
Rise Time
t
r
Turn-off-Delay Time
Fall Time
t
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
= 0.8 A
I
D
VGS = 0 V, VDS = 0 to 560 V 17
V
= 25 V, f = 1 MHz, VGS = 0 280
DS
V
= 350 V, ID = 0.8 A,
DD
= 4.7 Ω, V
R
G
(see Figure 17)
V
= 560 V, ID = 0.8 A,
DD
= 10 V
V
GS
(see Figure 20)
GS
= 10 V
1.4 S
35
6.5
7
17
20
35
11.4
6.8
15 nC
2
µA
µA
pF
pF
pF
nC
nC
Ω
ns
ns
ns
ns
Table 9: Source Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
SDM
V
SD
Q
I
RRM
Q
I
RRM
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(2) Pulse width limited by safe operating area
(3) C
oss eq
Source-drain Current
SD
(2)
Source-drain Current (pulsed)
(1)
Forward On Voltage
t
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
Reverse Recovery Current
t
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
Reverse Recovery Current
. is defined as a constant equivalent capacitance giving the same charging time as C
ISD = 1.6 A, VGS = 0
I
= 1.6, di/dt = 100 A/µs
SD
=50 V, Tj = 25°C
V
DD
(see Figure 18)
I
= 1.6, di/dt = 100 A/µs
SD
= 50 V, Tj = 150°C
V
DD
(see Figure 18)
334
918
350
1050
when VDS increases from 0 to 80% V
oss
1.6
6.4
1.6 V
5.5
6
A
A
ns
µC
A
ns
µC
A
3/12
DSS
STD2NK70Z - STD2NK70Z-1
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 5: Transconductance
4/12
Figure 8: Static Drain-source On Resistance
STD2NK70Z - STD2NK70Z-1
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Normalized Ga te Thereshold Voltage vs Temp er a t ur e
Figure 12: Capacitanc e Variations
Figure 13: Normalized On Resistance vs Temperature
Figure 11: Dource-Drain Diode Forward Characteristics
Figure 14: Normalized Breakdown Voltage vs Temperature
5/12
STD2NK70Z - STD2NK70Z-1
Figure 15: Maximum Avalanche Energy vs Temperature
6/12
STD2NK70Z - STD2NK70Z-1
Figure 16: Unclamped Inductive Load Test Circuit
Figure 17: Switching Times Test Circuit For Resist ive Load
Figure 19: Unclamped Inductive Wafeform
Figure 20: Gate Charge Test Circuit
Figure 18: Test Circuit For Inductive Load Switching and Diode Recovery Times
7/12
STD2NK70Z - STD2NK70Z-1
P032P_B
TO-252 (DPAK) MECHANICAL DATA
DIM.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0
MIN. TYP. MAX. MIN. TYP. MAX.
o
mm inch
o
8
o
0
o
0
8/12
STD2NK70Z - STD2NK70Z-1
TO-251 (IPAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
H
C
A
B5
A3
G
= =
0068771-E
C2
A1
B3
B6
L
B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implicatio n or ot h er wis e under an y pat e nt or pa te nt r igh ts of STMi c r oel ec tro ni c s. S pec i fi ca ti on s me nti o ne d in th is p ub l ic at ion ar e s ub jec t
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroel ectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
L2
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
E
B2
= =
= =
D
2
© 2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
1 3
L1
www.st.com
9/12
STD2NK70Z - STD2NK70Z-1
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D1 1.5 0.059
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
W 15.7 16.3 0.618 0.641
* on sales type
mm inch
MIN. MAX. MIN. MAX.
D 1. 5 1.6 0.059 0.063
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
R 40 1.574
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
REEL MECHANICAL DATA
DIM.
mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
10/12
STD2NK70Z - STD2NK70Z-1
Table 10: Revision History
Date Revision Description of Changes
07-Sep-2004 1 First Release, complete document.
24-Jan-2005 2 New curve, figure 3, and new Rds(on) value Max.
11/12
STD2NK70Z - STD2NK70Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implicati o n or ot h er wis e und er an y pat ent or pa te nt r igh ts of STMi cr oe l ec tro ni cs . Sp ec i fi ca ti on s ment i o ned i n th is p ub li c ati on ar e s ubj ec t
to change without notice. This publication supersedes and replaces all information previously sup plied. STMicro electronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
12/12
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