STMicroelectronics STD2N50N Technical data
STD2N50
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
STD 2N50 500 V < 5.5 Ω 2A
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ APPLICATION ORIENTED
DS(on)
= 4.5 Ω
o
C
CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTINGDPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
IPAK
TO-251
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
1
DPAK
TO-252
(Suffix ”T4”)
3
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
V
V
V
I
DM
P
T
(•) Pulsewidth limited bysafe operating area
December 1996
Drain - s ource Voltage (VGS= 0) 500 V
DS
Drain- gate Voltage (RGS=20kΩ) 500 V
DGR
Gate-source Voltage ± 20 V
GS
Drain Current (continuous) at Tc=25oC2A
I
D
Drain Current (continuous) at Tc=100oC1.25A
I
D
(•) Drain Current (pulsed) 8 A
Total Di ssipation a t Tc=25oC45W
tot
Derat ing Factor 0.36 W/
St or a ge Tem perature -65 t o 150
stg
Max. Operating Jun ction T emperature 150
T
j
o
o
o
C
C
C
1/10
STD2N50
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e
l
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng Tj=25oC, ID=IAR,VDD=50V)
Repetitive Avalanc he Energ y
AR
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(Tc= 100oC, pulse width l imited by Tjmax, δ <1%)
2.78
100
1.5
275
2A
20 mJ
1.5 mJ
1.2 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 500 V
Break d own Volta ge
I
DSS
I
GSS
Zer o G at e V oltage
Drain Current (V
GS
Gat e- body Leakage
=0)
=MaxRating
V
DS
V
= Max Rating x 0.8 Tc=125oC
DS
25
250
VGS= ± 20 V ± 100 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n
VGS=10V ID=1A 4.5 5.5 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
2A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=1A 0.65 1 S
VDS=25V f=1MHz VGS=0 200
35
12
270
50
18
µA
µA
pF
pF
pF
2/10
STD2N50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on T ime
t
Rise Time
r
Turn-on Current S lope VDD=400V ID=2A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAINDIODE
VDD=200V ID=1A
RG=50 Ω VGS=10V
35
85
(see test circuit, figure 3)
28 A/ µ s
RG=50 Ω VGS=10V
(see test circuit, figure 5)
VDD= 400 V ID=2A VGS=10V 18
5
8
VDD=400V ID=2A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
25
15
45
50
120
25 nC
35
25
65
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain C urrent
(•)
Source-drain C urrent
2
8
(pulsed)
V
(∗) Forward On Voltage ISD=2A VGS=0 1.5 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=2A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
330
2.5
Charge
I
RRM
Reverse Recovery
15
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Area Thermal Impedance
A
A
ns
µC
A
3/10
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