STD26P3LLH6
DPAK
D(2 or TAB)
G(1)
S(3)
AM11258v1
P-channel 30 V, 0.024 Ω typ., 12 A, STripFET™ VI DeepGATE™
Power MOSFET in a DPAK package
Datasheet - production data
Features
R
TAB
Order code V
3
2
1
STD26P3LLH6 30 V 0.030 Ω
1. @ VGS= 10 V
• R
* Qg industry benchmark
DS(on)
DSS
• Extremely low on-resistance R
• High avalanche ruggedness
• Low gate input resistance
DS(on)
max
I
(1)
12 A 40 W
DS(on)
P
D
TOT
Figure 1. Internal schematic diagram
Applications
• Switching applications
• LCC converters, resonant converters
Description
This device is a P-channel Power MOSFET
developed using the 6
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R
Table 1. Device summary
Order code Marking Package Packaging
STD26P3LLH6 26P3LLH6 DPAK Tape and reel
DS(on)
th
generation of STripFET™
in all packages
Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
February 2014 DocID023574 Rev 5 1/16
This is information on a product in full production.
www.st.com
Contents STD26P3LLH6
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 DocID023574 Rev 5
STD26P3LLH6 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
V
I
D
I
D
I
DM
P
TOT
T
T
1. Limited by wire bonding.
2. Pulse width limited by safe operating area.
Drain-source voltage 30 V
DS
Gate-source voltage ±20 V
GS
(1)
Drain current (continuous) at TC = 25 °C 12 A
(1)
Drain current (continuous) at TC = 100 °C 8.5 A
(1)(2)
Drain current (pulsed) 48 A
(1)
Total dissipation at TC = 25 °C 40 W
Storage temperature -55 to 175 °C
stg
Max. operating junction temperature 175 °C
j
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 3.75 °C/W
T able 4. Avalanche characteristics
Symbol Parameter Value Unit
Single pulse avalanche energy
E
AS
(starting T
=10 V)
V
gs
=25 °C, ID=6 A, IAS=12 A, VDD=25 V,
J
350 mJ
Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
DocID023574 Rev 5 3/16
16
Electrical characteristics STD26P3LLH6
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 5. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
Voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current V
Gate threshold voltage V
Static drain-source onresistance
ID = 250 μA, VGS= 0 30 V
V
= 30 V 1 μA
DS
V
= 30 V, Tc = 125 °C 10 μA
DS
= ± 20 V, (VDS = 0)
GS
= VGS, ID = 250 μA1 2.5V
DS
V
= 10 V, ID = 6 A 0.024 0.03 Ω
GS
V
= 4.5 V, ID = 6 A 0.038 0.045 Ω
GS
±
100 nA
Table 6. Dynamic
Symbol Parameter Test conditions Min Typ. Max. Unit
C
C
C
Input capacitance
iss
= 25 V, f=1 MHz,
Output capacitance - 178 - pF
oss
Reverse transfer
rss
capacitance
V
DS
V
= 0
GS
- 1450 - pF
-120-pF
Q
Q
Q
Total gate charge
g
Gate-source charge - 4.4 - nC
gs
Gate-drain charge - 5 - nC
gd
V
= 24 V, ID = 12 A
DD
V
= 4.5 V
GS
(see Figure 14)
-12-nC
f = 1 MHz , gat e DC
R
Gate input resistance
g
Bias = 0,
test signal level = 20 mV,
= 0
I
D
-1.8 -Ω
Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
4/16 DocID023574 Rev 5
STD26P3LLH6 Electrical chara ct er istics
Table 7. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
Turn-on delay time
= 24 V, ID = 1.5 A,
V
t
Rise time - 15 - ns
r
Turn-off delay time - 24 - ns
t
Fall time - 21 - ns
f
DD
R
= 4.7 Ω, V
G
(see Figure 13)
GS
= 10 V
-15 - ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Source-drain current - 12 A
(1)
Source-drain current (pulsed) - 48 A
(2)
Forward on voltage I
Reverse recovery time I
rr
Reverse recovery charge - 6.5 nC
rr
Reverse recovery current - 0.9 A
= 12 A, V
SD
SD
= 12 A,
GS
di/dt = 100 A/μs,
= 16 V
V
DD
(see Figure 15)
= 0 - 1.1 V
-15 ns
Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must
be reversed.
DocID023574 Rev 5 5/16
16
Electrical characteristics STD26P3LLH6
I
D
10
1
0.1
0.1
1
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
100µs
1ms
10ms
Tj=175°C
Tc= 2 5° C
Single pulse
AM15963v1
I
D
30
20
10
0
0
0.4
V
DS
(V)
0.8
(A)
0.2
0.6
1
3V
4V
1.2
25
15
5
5V
6V
7V
8V
9V
10V
35
AM15964v1
VGS
6
4
2
0
0
4
Q
g(nC)
(V)
16
8
8
12
10
12
20
24
28
AM15966v1
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
(A)
I
D
35
VDS=1V
AM15965v1
30
25
20
15
10
5
0
2
0
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
R
DS(on)
4
6
(mΩ)
VGS=10V
40.0
30.0
20.0
10.0
0.0
2
0
4
8
6
6/16 DocID023574 Rev 5
8
10
GS
(V)
V
AM15967v1
I
D
(A)
STD26P3LLH6 Electrical chara ct er istics
C
600
400
200
0
0
10
V
DS
(V)
(pF)
5
800
15
Ciss
Coss
Crss
20
25
1000
1200
1400
1600
AM15968v1
R
DS(on)
0.8
0.6
0.2
0
-55
5
T
J
(°C)
(norm)
-30
70
20
45
95
1
1.2
1.4
I
D
=6A
0.4
1.6
120
AM15970v1
V
SD
2
6
I
SD
(A)
(V)
4
8
10
0.6
0.7
0.8
0.9
TJ=-55°C
T
J=175°C
T
J=25°C
1
0.5
AM15972v1
Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs
-30
-5
temperature
D
I
20
45
70
=250µA
95
120
T
J
(°C)
AM15969v1
V
GS(th)
(norm)
0.8
0.6
0.4
0.2
1
0
-55
Figure 10. Normalized on-resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 11. Normalized VDS vs temperature
V
DS
(norm)
1.08
1.06
1.04
1.02
0.98
0.96
0.94
1
-55
-30
D
=1mA
I
20
5
45
70
95
120
AM15971v1
TJ(°C)
DocID023574 Rev 5 7/16
16
Test circuits STD26P3LLH6
AM11255v1
AM11256v1
AM11257v1
VGS
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μF
VDD
AM18080v1
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
3 Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 15. Test circuit for diode recovery
behavior
Figure 14. Gate charge test circuit
Figure 16. Unclamped inductive load test circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
ton
tr
tdon
90%
8/16 DocID023574 Rev 5
0
10%
0
10%
VDS
V
GS
90%
tdoff
toff
tf
90%
10%
AM01473v1
STD26P3LLH6 Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
DocID023574 Rev 5 9/16
16
Package mechanical data STD26P3LLH6
0068772_M_type_A
Figure 19. DPAK (TO-252) type A drawing
10/16 DocID023574 Rev 5
STD26P3LLH6 Package mechanical data
Table 9. DPAK (TO-252) type A mechanical data
mm
Dim.
Min. Typ. Max.
A2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b0.64 0.90
b4 5.20 5.40
c0.45 0.60
c2 0.48 0.60
D6.00 6.20
D1 5.10
E6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H 9.35 10.10
L1.00 1.50
(L1) 2.80
L2 0.80
L4 0.60 1.00
R0.20
V2 0° 8°
DocID023574 Rev 5 11/16
16
Package mechanical data STD26P3LLH6
Footprint_REV_M_type_A
Figure 20. DPAK (TO-252) type A footprint
(a)
a. All dimensions are in millimeters
12/16 DocID023574 Rev 5
STD26P3LLH6 Packaging mechanical data
P1
A0
D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. only
including draft and
radii concentric around B0
AM08852v1
Top cover
tape
5 Packaging mechanical data
Figure 21. Tape for DPAK (TO-252)
DocID023574 Rev 5 13/16
16
Packaging mechanical data STD26P3LLH6
A
D
B
Full radius
G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Figure 22. Reel for DPAK (TO-252)
T a ble 10. DPAK (TO-252) tape and reel mechanical data
Tape Reel
mm
Dim.
Dim.
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R40
T 0.25 0.35
mm
W 15.7 16.3
14/16 DocID023574 Rev 5
STD26P3LLH6 Revision history
6 Revision history
Table 11. Document revision history
Date Revision Changes
22-Aug-2012 1 First release
31-Jan-2013 2
– Modified: R
– Modified: typical values on Table 6, 7, 8
– Modified: V
on the title, Features table and Table 5
DS(on)
max value on Table 8
SD
– Updated: Section4: Package mechanical data
16-Jul-2013 3
– Modified: V
– Modified: R
and I
GS
DS(on)
=100 °C values in Table 2
D
max value in Table 5, Figure 13, 14 and 15
– Inserted: Section 2.1: Electrical characteristics (curves)
10-Sep-2013 4 – Updated Q
value in Table 6: Dynamic.
g
– Added: Table 4: Avalanche characteristics
– Modified: Figure 2, 5 and 12
06-Feb-2014 5
– Updated: Section 4: Package mechanical data
– Added: Figure 16, 17 and 18
– Minor text changes
DocID023574 Rev 5 15/16
16
STD26P3LLH6
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16/16 DocID023574 Rev 5
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