Datasheet STD25NF10L Datasheet (STMicroelectronics)

Low gate charge STripFET™ II Power MOSFET

General features

Type V

STD25NF10L 100V < 0.035Ω 25A

DSS

R

DS(on)

STD25NF10L

N-channel 100V - 0.030Ω - 25A - DPAK

I

D

■ Exceptional dv/dt capability

■ 100% avalanche tested

■ Low threshold device

■ Logic level device

Description

This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high­efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.

Applications

■ Switching application

3

1

DPAK

Internal schematic diagram

Order codes

Part number Marking Package Packaging

STD25NF10LT4 D25NF10L DPAK Tape & reel

July 2006 Rev 2 1/13

www.st.com

13

Contents STD25NF10L

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13

STD25NF10L Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

V

I

V

DGR

V

I

D

DM

P

I

DS

GS

(1)

D

(2)

tot

Drain-source voltage (VGS = 0) 100 V

Drain-gate voltage (RGS = 20 kΩ) 100 V

Gate- source voltage ± 16 V

Drain current (continuous) at TC = 25°C 25 A

Drain current (continuous) at TC = 100°C 21 A

Drain current (pulsed) 100 A

Total dissipation at TC = 25°C 100 W

Derating Factor 0.67 W/°C

(3)

dv/dt

(4)

E

AS

T

stg

T

j

1. Current limited by package

2. Pulse width limited by safe operating area.

3. ISD ≤ 25A, di/dt ≤ 300A/µs, VDD =V(

4. Starting Tj = 25 °C, ID = 12.5A VDD = 50V

Peak diode recovery avalanche energy 20 V/ns

Single pulse avalanche energy 450 mJ

Storage temperature

-55 to 175 °C

Max. operating junction temperature

, Tj ≤ T

BR)DSS

JMAX

Table 2. Thermal data

Rthj-case Thermal resistance junction-case max 1.5 °C/W

Rthj-pcb Thermal resistance junction-pcb max

T

J

1. When Mounted on 1 inch2 FR-4 board, 2 oz of Cu.

Maximum lead temperature for soldering purpose 275 °C

(1)

100 °C/W

3/13

Electrical characteristics STD25NF10L

2 Electrical characteristics

(T

=25°C unless otherwise specified)

CASE

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
breakdown voltage

Zero gate voltage
drain current (V

GS

Gate-body leakage
current (V

DS

= 0)

= 0)

ID = 250µA, VGS =0 100 V

V

= Max rating

DS

VDS = Max rating,

= 125°C

T

C

1

10

VGS = ± 16V ±100 nA

Gate threshold voltage VDS = VGS, ID = 250µA 1 2.5 V

Static drain-source on
resistance

= 10V, ID = 12.5A

V

GS

= 4.5V, ID = 12.5A

V

GS

0.030

0.035

0.035

0.040

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Forward

(1)

g

fs

transconductance

V

= 15V, ID= 12.5A 24 S

DS

µA
µA

Ω

Ω

C

C

C

t

d(on)

t

t

d(off)

t

Q

Q

Q

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Turn-on delay time
Rise time

r

Turn-off delay time
Fall time

f

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

= 25V, f = 1MHz,

V

DS

VGS = 0

= 50V, ID = 12.5A

V

DD

=4.7Ω VGS = 5V

R

G

(see Figure 13)

VDD = 80V, ID = 25A,

= 5V, RG=4.7Ω

V

GS

(see Figure 14)

1710

250
110

20
40
58
20

38

8.5
21

pF
pF
pF

ns
ns
ns
ns

52 nC

nC
nC

4/13

STD25NF10L Electrical characteristics

Table 5. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Source-drain current
Source-drain current

(1)

(pulsed)

(2)

Forward on voltage ISD = 25A, VGS = 0 1.5 V

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

ISD = 25A, di/dt = 100A/µs,
VDD = 50V, Tj = 150°C
(see Figure 15)

88

317

7.2

25

100

A
A

ns

nC

A

5/13

Electrical characteristics STD25NF10L

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

Figure 3. Output characterisics Figure 4. Transfer characteristics

Figure 5. Transconductance Figure 6. Static drain-source on resistance

6/13

STD25NF10L Electrical characteristics

Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage

vs temperature

Figure 11. Source-drain diode forward

characteristics

Figure 10. Normalized on resistance vs

temperature

Figure 12. Normalized breakdown voltage vs

temperature

7/13

Test circuit STD25NF10L

3 Test circuit

Figure 13. Switching times test circuit for

resistive load

Figure 15. Test circuit for inductive load

switching and diode recovery times

Figure 14. Gate charge test circuit

Figure 16. Unclamped Inductive load test

circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

8/13

STD25NF10L Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

9/13

Package mechanical data STD25NF10L

DPAK MECHANICAL DATA

DIM.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035

b4 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244
D1 5.1 0.200

E 6.4 6.6 0.252 0.260
E1 4.7 0.185

e 2.28 0.090

e1 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397

L 1 0.039

(L1) 2.8 0.110

L2 0.8 0.031
L4 0.6 1 0.023 0.039

R 0.2 0.008
V2 0° 8° 0° 8°

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

10/13

0068772-F

STD25NF10L Packing mechanical data

5 Packing mechanical data

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0.795

G 16.4 18.4 0.645 0.724

N 50 1.968

T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275

B0 10.4 10.6 0.409 0.417

B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299

K0 2.55 2.75 0.100 0.108

P0 3.9 4.1 0.153 0.161

P1 7.9 8.1 0.311 0.319

P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

11/13

Revision history STD25NF10L

6 Revision history

Table 6. Revision history

Date Revision Changes

21-Jun-2004 1 Preliminary version

03-Jun-2006 2 New template, no content change

12/13

STD25NF10L

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