STMicroelectronics STD22NM20N Technical data
STD22NM20N
3
N-CHANNEL 200V - 0.088Ω - 22A DPAK
ULTRA LOW GATE CHARGE MDmesh™ II MOSFET
Table 1: General Fe a ture s
TYPE V
STD22NM20N 200 V < 0.105 Ω 22 A
■ WORLDWIDE LOWEST GATE CHARGE
■ TYPICAL R
■ HIGH dv/dt and AVALANCHE CAPAB IL IT IES
■ LOW INPUT CAPACITANCE
■ LOW GATE RESISTAN CE
DS
DSS
(on) = 0.088 Ω
R
DS(on)
I
D
DESCRIPTION
This 200V MOS FET with a new advanced layout
brings all unique advantages of MDm esh technol
ogy to lower vol tages. The device exhi bits worldwide lowest gate charge for any given onresistance. Its use is therefore ideal as primary
switch in isolated DC-DC converters for Telecom
and Computer appli cations. Used in combination
with secondary-side low-voltage STripFET™
products, it contributes to reducting losses and
boosting effeciency.
APPLICATIONS
The MDmesh™ family is very suitable for increasing power density allowing system miniaturization
and higher efficiencies
Figure 1: Package
1
DPAK
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
SALES TYPE MARKING PACKAGE PACKAGING
STD22NM20NT4 D22NM20N DPAK TAPE & REEL
Rev. 5
1/10November 2005
STD22NM20N
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
DM
P
TOT
dv/dt (2) Peak Diode Recovery voltage slope 14 V/ns
T
j
T
stg
(*) ISD ≤ 22A, di/dt ≤ 400A/µs, VDD = 80% V
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
Rthj-ambTlThermal Resistance Junction-pcb (*)
(*) When mounted on 1 inch² FR-4 board, 2 oz Cu, t ≤ 10 sec
Drain-source Voltage (VGS = 0) 200 V
Drain-gate Voltage (RGS = 20 kΩ) 200 V
Gate- source Voltage
Drain Current (continuous) at TC = 25°
Drain Current (continuous) at T
(*)
Drain Current (pulsed)
C =
100°
± 20 V
22
13.7
88 A
Total Dissipation at TC = 25°C 100 W
Derating Factor 0.8 W/°C
Storage Temperature
Max Operating Junction Temperature
(BR)DSS
150
-65 to 150
43
Maximum Lead Temperature For Soldering Purpose
275
A
A
°C
°C
°C/W
°C
Table 5: Avalanche Characteristics
Symbol Parameter Max Value Unit
I
AS
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = 22 A, VDD = 50 V)
22 A
380 mJ
2/10
STD22NM20N
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 6: On/Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 1mA, VGS = 0 200 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (VGS = 0)
Gate-body Leaka ge
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
VGS = ± 20V 100 nA
Current (VDS = 0)
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
VDS = VGS, ID = 250 µA 3.5 4.2 5 V
VGS = 10V, ID = 11 A 0.088 0.105 Ω
Resistance
Table 7: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
C
(**) C
(2)
fs
C
iss
C
oss
C
rss
oss eq. (**)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Outpu t
Capacitiance
R
t
d(on)
t
t
r(Voff)
t
Q
Q
Q
oss eq.
G
r
f
g
gs
gd
Gate Input Resistance f= 1MHz Gate DC Bias = 0
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
is defi n ed as a constant equivalent capacitance gi vi ng the sam e charging tim e as C
VDS = 15 V, ID=11 A 8 S
VDS = 25V, f = 1 MHz, VGS = 0 800
330
130
VGS = 0 V, VDS = 0 V to 400 V 225 pF
5 Ω
Test Sgnal Level = 20 mV
Open Drain
VDD = 100 V, ID = 11 A
RG = 4.7Ω VGS = 10 V
(see Figure 15)
40
15
40
11
VDD = 100 V, ID = 20 A,
VGS = 10 V
(see Figure 19)
when VDS increases from 0 to 80% V
oss
32
25
50 nC
6
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
DSS
Table 8: Source Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
(1)
SDM
VSD (2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
(1) Pulse width limite d by safe operating area.
(2) Pulsed: Pulse durat i on = 300 µs, duty cycle 1.5 %
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, VGS = 0 1.3 V
ISD = 20 A, di/dt = 100 A/µs
VDD = 100V, Tj = 25°C
(see test circuit, Figure 17)
ISD = 20 A, di/dt = 100 A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 17)
160
960
12.8
225
1642
15
22
88
A
A
ns
µC
A
ns
µC
A
3/10
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