STMicroelectronics STD22NM20N Technical data

STD22NM20N

3

N-CHANNEL 200V - 0.088Ω - 22A DPAK

ULTRA LOW GATE CHARGE MDmesh™ II MOSFET

Table 1: General Fe a ture s

TYPE V

STD22NM20N 200 V < 0.105 Ω 22 A

■ WORLDWIDE LOWEST GATE CHARGE

■ TYPICAL R

■ HIGH dv/dt and AVALANCHE CAPAB IL IT IES

■ LOW INPUT CAPACITANCE

■ LOW GATE RESISTAN CE

DS

DSS

(on) = 0.088 Ω

R

DS(on)

I

D

DESCRIPTION

This 200V MOS FET with a new advanced layout
brings all unique advantages of MDm esh technol

­ogy to lower vol tages. The device exhi bits world­wide lowest gate charge for any given on­resistance. Its use is therefore ideal as primary
switch in isolated DC-DC converters for Telecom
and Computer appli cations. Used in combination
with secondary-side low-voltage STripFET™
products, it contributes to reducting losses and
boosting effeciency.

APPLICATIONS

The MDmesh™ family is very suitable for increas­ing power density allowing system miniaturization
and higher efficiencies

Figure 1: Package

1

DPAK

Figure 2: Internal Schematic Diagram

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STD22NM20NT4 D22NM20N DPAK TAPE & REEL

Rev. 5

1/10November 2005

STD22NM20N

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

TOT

dv/dt (2) Peak Diode Recovery voltage slope 14 V/ns

T

j

T

stg

(*) ISD ≤ 22A, di/dt ≤ 400A/µs, VDD = 80% V

Table 4: Thermal Data

Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W

Rthj-ambTlThermal Resistance Junction-pcb (*)

(*) When mounted on 1 inch² FR-4 board, 2 oz Cu, t ≤ 10 sec

Drain-source Voltage (VGS = 0) 200 V
Drain-gate Voltage (RGS = 20 kΩ) 200 V
Gate- source Voltage
Drain Current (continuous) at TC = 25°

Drain Current (continuous) at T

(*)

Drain Current (pulsed)

C =

100°

± 20 V

22

13.7
88 A

Total Dissipation at TC = 25°C 100 W
Derating Factor 0.8 W/°C

Storage Temperature
Max Operating Junction Temperature

(BR)DSS

150

-65 to 150

43

Maximum Lead Temperature For Soldering Purpose

275

A
A

°C
°C

°C/W

°C

Table 5: Avalanche Characteristics

Symbol Parameter Max Value Unit

I

AS

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)

Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = 22 A, VDD = 50 V)

22 A

380 mJ

2/10

STD22NM20N

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 6: On/Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID = 1mA, VGS = 0 200 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (VGS = 0)

Gate-body Leaka ge

VDS = Max Rating
VDS = Max Rating, TC = 125 °C

1

10

VGS = ± 20V 100 nA

Current (VDS = 0)

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

VDS = VGS, ID = 250 µA 3.5 4.2 5 V
VGS = 10V, ID = 11 A 0.088 0.105 Ω

Resistance

Table 7: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

C

(**) C

(2)

fs

C

iss

C

oss

C

rss

oss eq. (**)

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

Equivalent Outpu t
Capacitiance

R

t

d(on)

t

t

r(Voff)

t

Q
Q
Q

oss eq.

G

r

f

g
gs
gd

Gate Input Resistance f= 1MHz Gate DC Bias = 0

Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

is defi n ed as a constant equivalent capacitance gi vi ng the sam e charging tim e as C

VDS = 15 V, ID=11 A 8 S
VDS = 25V, f = 1 MHz, VGS = 0 800

330
130

VGS = 0 V, VDS = 0 V to 400 V 225 pF

5 Ω
Test Sgnal Level = 20 mV
Open Drain

VDD = 100 V, ID = 11 A
RG = 4.7Ω VGS = 10 V
(see Figure 15)

40
15
40
11

VDD = 100 V, ID = 20 A,
VGS = 10 V
(see Figure 19)

when VDS increases from 0 to 80% V

oss

32
25

50 nC

6

µA
µA

pF
pF
pF

ns
ns
ns
ns

nC
nC

DSS

Table 8: Source Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

(1)

SDM

VSD (2)

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

(1) Pulse width limite d by safe operating area.
(2) Pulsed: Pulse durat i on = 300 µs, duty cycle 1.5 %

Source-drain Current
Source-drain Current (pulsed)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

ISD = 20 A, VGS = 0 1.3 V
ISD = 20 A, di/dt = 100 A/µs

VDD = 100V, Tj = 25°C
(see test circuit, Figure 17)

ISD = 20 A, di/dt = 100 A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 17)

160
960

12.8
225

1642

15

22
88

A
A

ns

µC

A

ns

µC

A

3/10

STD22NM20N

Figure 3: Safe Operating Area

Figure 4: Output Characteristics

Figure 6: Thermal Impedance

Figure 7: Transfer Characteristics

Figure 5: Transconductance

4/10

Figure 8: Static Drain-source On Resistance

STD22NM20N

Figure 9: Gate Charge vs Gate-source Voltag e

Figure 10: Normalized Gate Thereshold Volt­age vs Temperature

Figure 12: Capacitance Variations

Figure 13: Normal ized On R esistance vs Tem­perature

Figure 11: S ource-Drain Diode Forward Char­acteristics

Figure 14: Normalized BVdss vs Temperature

5/10

STD22NM20N

Figure 15: Unclamped Inductive Load Test Cir­cuit

Figure 16: Switching Times Test Circuit For Resistive Load

Figure 18: Unclamped Inductive Wafeform

Figure 19: Gate Charge Test Circuit

Figure 17: Test Circuit For Inductive Load Switching and Diode Recovery Times

6/10

TO-252 (DPAK ) MECHANICAL DATA

STD22NM20N

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

P032P_B

7/10

STD22NM20N

All dimensions are in millimeters

DPAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795

G 16.4 18.4 0.645 0.724

N 50 1.968
T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7. 4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

8/10

Table 9: Revision History

Date Revision Description of Change s

31-May-2004 1 First Release.
15-Mar-2005 2 Update version.
09-May-2005 3 Complete version.

09-Jun-2005 4 New update

04-Nov-2005 5 Corrected value on Table 8

STD22NM20N

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STD22NM20N

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s

o

d

b

t

t

t

a

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