ST MICROELECTRONICS STD20NF20 Datasheet

N-channel 200 V, 0.10 Ω, 18 A DPAK, TO-220, TO-220FP
low gate charge STripFET™ Power MOSFET
Features
Type V
DSS RDS(on)
STD20NF20 200 V < 0.125 18 A 110 W
STF20NF20 200 V < 0.125 18 A 30 W
STP20NF20 200 V < 0.125 18 A 110 W
Low gate charge
100% avalanche tested
Application
Switching applications
I
D
STD20NF20
STF20NF20, STP20NF20
P
W
TO-220FP
3
2
1
TO-220
3
1
DPAK
3
2
1
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high­efficiency isolated DC-DC converters.

Table 1. Device summary

Order codes Marking Package Packaging
STD20NF20 20NF20 DPAK Tape and reel
STF20NF20 20NF20 TO-220FP Tube
STP20NF20 20NF20 TO-220 Tube

Figure 1. Internal schematic diagram

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December 2009 Doc ID 13154 Rev 4 1/15
www.st.com
15
Contents STD20NF20, STF20NF20, STP20NF20
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value
Symbol Parameter
TO-220, DPAK TO-220FP
Unit
I
DM
P
V
V
DS
GS
I
D
I
D
TOT
(1)
Drain-source voltage (VGS = 0) 200 V
Gate- source voltage ± 20 V
Drain current (continuous) at TC = 25 °C 18 A
Drain current (continuous) at TC = 100 °C 11 A
Drain current (pulsed) 72 A
Total dissipation at TC = 25 °C 110 30 W
Derating factor 0.72 0.2 W/°C
(2)
dv/dt
Peak diode recovery voltage slope 15 V/ns
Insulation withstand voltage (RMS) from all
V
ISO
three leads to external heat sink (t = 1 s; Tc = 25 °C)
T
stg
T
j
1. Pulse width limited by safe operating area
2. ISD 18 A, di/dt 400 A/µs, VDD V
Storage temperature
Max. operating junction temperature

Table 3. Thermal data

2500 V
-55 to 175 °C
(BR)DSS
Symbol Parameter TO-220 DPAK TO-220FP Unit
Rthj-case Thermal resistance junction-case max 1.38 1.38 5 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 50
T
l
1. When mounted on 1inch² FR-4, 2 Oz copper board.
Maximum lead temperature for soldering purpose
(1)
62.5 °C/W
300 °C

Table 4. Avalanche characteristics

Symbol Parameter Max value Unit
I
AR
E
AS
Avalanche current, repetitive or not­repetitive (pulse width limited by T
Single pulse avalanche energy (starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
Doc ID 13154 Rev 4 3/15
max)
j
18 A
110 mJ
Electrical characteristics STD20NF20, STF20NF20, STP20NF20

2 Electrical characteristics

(T
=25°C unless otherwise specified)
CASE

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown voltage
Zero gate voltage drain current (VGS = 0)
Gate-body leakage current (VDS = 0)
ID = 1 mA, VGS = 0 200 V
VDS = Max rating VDS = Max rating, TC = 125 °C
1
10µAµA
VGS = ± 20 V ±100 nA
Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
Static drain-source on resistance
= 10 V, ID = 10 A 0.10 0.125
V
GS

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit
Forward
(1)
g
fs
C
C
oss
C
transconductance
Input capacitance
iss
Output capacitance Reverse transfer
rss
capacitance
= 25 V, ID= 10 A - 13 S
V
DS
= 25 V, f = 1 MHz,
V
DS
VGS = 0
940
-
197
30
pF pF pF
t
d(on)
t
t
d(off)
t
Q Q Q
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Turn-on delay time Rise time
r
Turn-off delay time Fall time
r
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
4/15 Doc ID 13154 Rev 4
= 100 V, ID = 10 A,
V
DD
= 4.7 Ω VGS = 10 V
R
G
(see Figure 15)
VDD = 160 V, ID = 20 A,
= 10 V
V
GS
(see Figure 16)
15 30
­40
10
28
-
5.6
14.5
ns ns ns ns
39 nC
nC nC
STD20NF20, STF20NF20, STP20NF20 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit
Source-drain current Source-drain current
(1)
(pulsed)
(2)
Forward on voltage ISD = 20 A, VGS = 0 - 1.6 V
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 20 A, di/dt = 100A/µs VDD = 50 V
(see Figure 20)
= 20 A, di/dt = 100 A/µs
I
SD
= 50 V, Tj = 150 °C
V
DD
(see Figure 20)
I
SDM
V
I
I
I
SD
SD
t
Q
RRM
t
Q
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
-
18 72
155
-
775
10
183
-
1061
11.6
A A
ns
nC
A
ns
nC
A
Doc ID 13154 Rev 4 5/15
Electrical characteristics STD20NF20, STF20NF20, STP20NF20

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220,
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
DPAK
Figure 3. Thermal impedance area for TO-220,
DPAK
Figure 6. Output characteristics Figure 7. Transfer characteristics
6/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20 Electrical characteristics
Figure 8. Transconductance Figure 9. Static drain-source on resistance
G
FS
(S)
T
J
=-50°C
AM03979v1
19
17
T
J
=25°C
15
13
T
J
=175°C
11
9
7
3
9
6
12
15
18
I
D
(A)
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
V
GS(th)
(norm)
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
-50
0
50
100
150
Figure 13. Normalized on resistance vs
temperature
AM03980v1
R
DS(on)
(norm)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
T
J
(°C)
-50
0
50
100
Doc ID 13154 Rev 4 7/15
150
AM03981v1
T
J
(°C)
Electrical characteristics STD20NF20, STF20NF20, STP20NF20
Figure 14. Source-drain diode forward
characteristics
V
SD
(V)
TJ=-50°C
0.9
0.8
0.7
0.6
0.5
3
6
AM03982v1
TJ=25°C
TJ=175°C
12
9
15
18
I
SD
(A)
8/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20 Test circuits

3 Test circuits

Figure 15. Switching times test circuit for
PW
resistive load
VD
VGS
RG
RL
D.U.T.
2200
µF
3.3 µF
AM01468v1
V
DD
Figure 17. Test circuit for inductive load
G
25
switching and diode recovery times
A
D
D.U. T.
S
B
R
FAST DIODE
G
A
A
L=100µH
B
B
D
G
S
3.3
µF
1000
µF
V
DD

Figure 16. Gate charge test circuit

V
i=20V=VGMAX
PW
2200 µF
1k
12V
IG=CONST
2.7k
47k
47k
100
100nF
D.U.T.
AM01469v1
Figure 18. Unclamped inductive load test
circuit
L
VD
ID
Vi
D.U. T.
2200
µF
3.3 µF
1k
VDD
V
VDD
G
Pw
AM01470v1

Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

V(BR)DSS
VD
IDM
ID
VDD
0
VDD
AM01472v1
0
Doc ID 13154 Rev 4 9/15
10%
tdon
ton
90%
tr
10%
V
GS
VDS
90%
tdoff
AM01471v1
toff
tf
90%
10%
AM01473v1
Package mechanical data STD20NF20, STF20NF20, STP20NF20

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
10/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20 Package mechanical data
TO-220 type A mechanical data
Dim
Min Typ Max
mm
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c0.48 0.70 D 15.25 15.75
D1 1.27
E10 10.40 e 2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93 L20 16.40 L3028.90
P 3.75 3.85
Q 2.65 2.95
0015988_Rev_S
Doc ID 13154 Rev 4 11/15
Package mechanical data STD20NF20, STF20NF20, STP20NF20
TO-252 (DPAK) mechanical data
DIM.
V2 0
mm.
.xampyt.nim
04.202.2A
01.109.01A
32.030.02A
09.046.0b
04.502.54b
06.054.0c
06.084.02c
02.600.6D
01.51D
.6E
06.604
07.41E
82.2e
06.404.41e
01.0153.9H
1L
08.21L
08.02L
106.04L
02.0R
o
o
8
12/15 Doc ID 13154 Rev 4
0068772_G
STD20NF20, STF20NF20, STP20NF20 Packaging mechanical data

5 Packaging mechanical data

DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
TAPE MECHANICAL DATA
DIM.
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
mm inch
MIN. MAX. MIN. MAX.
2500 2500
Doc ID 13154 Rev 4 13/15
Revision history STD20NF20, STF20NF20, STP20NF20

6 Revision history

Table 8. Revision history

Date Revision Changes
25-Jan-2007 1 First release
20-Mar-2007 2 Typo mistake in first page (order codes)
27-Apr-2007 3 Updates on Table 6: Dynamic
10-Dec-2009 4 Modified device summary on first page
14/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20
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Doc ID 13154 Rev 4 15/15
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