ST MICROELECTRONICS STD20NF20 Datasheet
N-channel 200 V, 0.10 Ω, 18 A DPAK, TO-220, TO-220FP
low gate charge STripFET™ Power MOSFET
Features
Type V
DSS RDS(on)
STD20NF20 200 V < 0.125 Ω 18 A 110 W
STF20NF20 200 V < 0.125 Ω 18 A 30 W
STP20NF20 200 V < 0.125 Ω 18 A 110 W
■ Exceptional dv/dt capability
■ Low gate charge
■ 100% avalanche tested
Application
■ Switching applications
I
D
STD20NF20
STF20NF20, STP20NF20
P
W
TO-220FP
3
2
1
TO-220
3
1
DPAK
3
2
1
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency isolated DC-DC converters.
Table 1. Device summary
Order codes Marking Package Packaging
STD20NF20 20NF20 DPAK Tape and reel
STF20NF20 20NF20 TO-220FP Tube
STP20NF20 20NF20 TO-220 Tube
Figure 1. Internal schematic diagram
$
'
3
!-V
December 2009 Doc ID 13154 Rev 4 1/15
www.st.com
15
Contents STD20NF20, STF20NF20, STP20NF20
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol Parameter
TO-220, DPAK TO-220FP
Unit
I
DM
P
V
V
DS
GS
I
D
I
D
TOT
(1)
Drain-source voltage (VGS = 0) 200 V
Gate- source voltage ± 20 V
Drain current (continuous) at TC = 25 °C 18 A
Drain current (continuous) at TC = 100 °C 11 A
Drain current (pulsed) 72 A
Total dissipation at TC = 25 °C 110 30 W
Derating factor 0.72 0.2 W/°C
(2)
dv/dt
Peak diode recovery voltage slope 15 V/ns
Insulation withstand voltage (RMS) from all
V
ISO
three leads to external heat sink
(t = 1 s; Tc = 25 °C)
T
stg
T
j
1. Pulse width limited by safe operating area
2. ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD ≤ V
Storage temperature
Max. operating junction temperature
Table 3. Thermal data
2500 V
-55 to 175 °C
(BR)DSS
Symbol Parameter TO-220 DPAK TO-220FP Unit
Rthj-case Thermal resistance junction-case max 1.38 1.38 5 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 50
T
l
1. When mounted on 1inch² FR-4, 2 Oz copper board.
Maximum lead temperature for soldering
purpose
(1)
62.5 °C/W
300 °C
Table 4. Avalanche characteristics
Symbol Parameter Max value Unit
I
AR
E
AS
Avalanche current, repetitive or notrepetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
Doc ID 13154 Rev 4 3/15
max)
j
18 A
110 mJ
Electrical characteristics STD20NF20, STF20NF20, STP20NF20
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
breakdown voltage
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
ID = 1 mA, VGS = 0 200 V
VDS = Max rating
VDS = Max rating, TC = 125 °C
1
10µAµA
VGS = ± 20 V ±100 nA
Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
Static drain-source on
resistance
= 10 V, ID = 10 A 0.10 0.125 Ω
V
GS
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Forward
(1)
g
fs
C
C
oss
C
transconductance
Input capacitance
iss
Output capacitance
Reverse transfer
rss
capacitance
= 25 V, ID= 10 A - 13 S
V
DS
= 25 V, f = 1 MHz,
V
DS
VGS = 0
940
-
197
30
pF
pF
pF
t
d(on)
t
t
d(off)
t
Q
Q
Q
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Turn-on delay time
Rise time
r
Turn-off delay time
Fall time
r
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
4/15 Doc ID 13154 Rev 4
= 100 V, ID = 10 A,
V
DD
= 4.7 Ω VGS = 10 V
R
G
(see Figure 15)
VDD = 160 V, ID = 20 A,
= 10 V
V
GS
(see Figure 16)
15
30
40
10
28
-
5.6
14.5
ns
ns
ns
ns
39 nC
nC
nC
STD20NF20, STF20NF20, STP20NF20 Electrical characteristics
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
Source-drain current
Source-drain current
(1)
(pulsed)
(2)
Forward on voltage ISD = 20 A, VGS = 0 - 1.6 V
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 20 A, di/dt = 100A/µs
VDD = 50 V
(see Figure 20)
= 20 A, di/dt = 100 A/µs
I
SD
= 50 V, Tj = 150 °C
V
DD
(see Figure 20)
I
SDM
V
I
I
I
SD
SD
t
Q
RRM
t
Q
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
-
18
72
155
-
775
10
183
-
1061
11.6
A
A
ns
nC
A
ns
nC
A
Doc ID 13154 Rev 4 5/15
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