ST MICROELECTRONICS STD20NF20 Datasheet

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N-channel 200 V, 0.10 Ω, 18 A DPAK, TO-220, TO-220FP

low gate charge STripFET™ Power MOSFET

Features

Type V

DSS RDS(on)

STD20NF20 200 V < 0.125 Ω 18 A 110 W

STF20NF20 200 V < 0.125 Ω 18 A 30 W

STP20NF20 200 V < 0.125 Ω 18 A 110 W

■ Exceptional dv/dt capability

■ Low gate charge

■ 100% avalanche tested

Application

■ Switching applications

STD20NF20

STF20NF20, STP20NF20

TO-220FP

TO-220

DPAK

Description

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters.

Table 1. Device summary

Order codes Marking Package Packaging

STD20NF20 20NF20 DPAK Tape and reel

STF20NF20 20NF20 TO-220FP Tube

STP20NF20 20NF20 TO-220 Tube

Figure 1. Internal schematic diagram

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December 2009 Doc ID 13154 Rev 4 1/15

www.st.com

Contents STD20NF20, STF20NF20, STP20NF20

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

2/15 Doc ID 13154 Rev 4

STD20NF20, STF20NF20, STP20NF20 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value

Symbol Parameter

TO-220, DPAK TO-220FP

Unit

TOT

(1)

Drain-source voltage (VGS = 0) 200 V

Gate- source voltage ± 20 V

Drain current (continuous) at TC = 25 °C 18 A

Drain current (continuous) at TC = 100 °C 11 A

Drain current (pulsed) 72 A

Total dissipation at TC = 25 °C 110 30 W

Derating factor 0.72 0.2 W/°C

(2)

dv/dt

Peak diode recovery voltage slope 15 V/ns

Insulation withstand voltage (RMS) from all

ISO

three leads to external heat sink (t = 1 s; Tc = 25 °C)

stg

1. Pulse width limited by safe operating area

2. ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD ≤ V

Storage temperature

Max. operating junction temperature

Table 3. Thermal data

2500 V

-55 to 175 °C

(BR)DSS

Symbol Parameter TO-220 DPAK TO-220FP Unit

Rthj-case Thermal resistance junction-case max 1.38 1.38 5 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 50

1. When mounted on 1inch² FR-4, 2 Oz copper board.

Maximum lead temperature for soldering purpose

(1)

62.5 °C/W

300 °C

Table 4. Avalanche characteristics

Symbol Parameter Max value Unit

Avalanche current, repetitive or notrepetitive (pulse width limited by T

Single pulse avalanche energy (starting T

= 25 °C, ID = IAR, VDD = 50 V)

Doc ID 13154 Rev 4 3/15

max)

18 A

110 mJ

Electrical characteristics STD20NF20, STF20NF20, STP20NF20

2 Electrical characteristics

=25°C unless otherwise specified)

CASE

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

(BR)DSS

DSS

GSS

GS(th)

DS(on)

Drain-source breakdown voltage

Zero gate voltage drain current (VGS = 0)

Gate-body leakage current (VDS = 0)

ID = 1 mA, VGS = 0 200 V

VDS = Max rating VDS = Max rating, TC = 125 °C

10µAµA

VGS = ± 20 V ±100 nA

Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V

Static drain-source on resistance

= 10 V, ID = 10 A 0.10 0.125 Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Forward

(1)

oss

transconductance

Input capacitance

iss

Output capacitance Reverse transfer

rss

capacitance

= 25 V, ID= 10 A - 13 S

= 25 V, f = 1 MHz,

VGS = 0

940

197

pF pF pF

d(on)

d(off)

Q Q Q

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Turn-on delay time Rise time

Turn-off delay time Fall time

Total gate charge

Gate-source charge

Gate-drain charge

4/15 Doc ID 13154 Rev 4

= 100 V, ID = 10 A,

= 4.7 Ω VGS = 10 V

(see Figure 15)

VDD = 160 V, ID = 20 A,

= 10 V

(see Figure 16)

15 30

5.6

14.5

ns ns ns ns

39 nC

nC nC

STD20NF20, STF20NF20, STP20NF20 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

Source-drain current Source-drain current

(1)

(pulsed)

(2)

Forward on voltage ISD = 20 A, VGS = 0 - 1.6 V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 20 A, di/dt = 100A/µs VDD = 50 V

(see Figure 20)

= 20 A, di/dt = 100 A/µs

= 50 V, Tj = 150 °C

(see Figure 20)

SDM

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

18 72

155

775

183

1061

11.6

A A

Doc ID 13154 Rev 4 5/15

Electrical characteristics STD20NF20, STF20NF20, STP20NF20

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220,

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

DPAK

Figure 3. Thermal impedance area for TO-220,

DPAK

Figure 6. Output characteristics Figure 7. Transfer characteristics

6/15 Doc ID 13154 Rev 4

STD20NF20, STF20NF20, STP20NF20 Electrical characteristics

Figure 8. Transconductance Figure 9. Static drain-source on resistance

(S)

=-50°C

AM03979v1

=25°C

=175°C

(A)

Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations

Figure 12. Normalized gate threshold voltage

vs temperature

GS(th)

(norm)

1.10

1.00

0.90

0.80

0.70

0.60

0.50

0.40

-50

100

150

Figure 13. Normalized on resistance vs

temperature

AM03980v1

DS(on)

(norm)

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

(°C)

-50

100

Doc ID 13154 Rev 4 7/15

150

AM03981v1

(°C)

Electrical characteristics STD20NF20, STF20NF20, STP20NF20

Figure 14. Source-drain diode forward

characteristics

(V)

TJ=-50°C

0.9

0.8

0.7

0.6

0.5

AM03982v1

TJ=25°C

TJ=175°C

(A)

8/15 Doc ID 13154 Rev 4

STD20NF20, STF20NF20, STP20NF20 Test circuits

3 Test circuits

Figure 15. Switching times test circuit for

resistive load

VGS

D.U.T.

2200

µF

3.3 µF

AM01468v1

Figure 17. Test circuit for inductive load

Ω

switching and diode recovery times

D.U. T.

FAST DIODE

L=100µH

3.3

µF

1000

µF

Figure 16. Gate charge test circuit

i=20V=VGMAX

2200 µF

1kΩ

12V

IG=CONST

2.7kΩ

47kΩ

100Ω

100nF

D.U.T.

AM01469v1

Figure 18. Unclamped inductive load test

circuit

D.U. T.

2200

µF

3.3 µF

1kΩ

VDD

AM01470v1

Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

V(BR)DSS

IDM

VDD

AM01472v1

Doc ID 13154 Rev 4 9/15

10%

tdon

ton

90%

10%

VDS

90%

tdoff

AM01471v1

toff

90%

10%

AM01473v1

Package mechanical data STD20NF20, STF20NF20, STP20NF20

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

10/15 Doc ID 13154 Rev 4

STD20NF20, STF20NF20, STP20NF20 Package mechanical data

TO-220 type A mechanical data

Dim

Min Typ Max

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c0.48 0.70 D 15.25 15.75

D1 1.27

E10 10.40 e 2.40 2.70

e1 4.95 5.15

F1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L13 14

L1 3.50 3.93 L20 16.40 L3028.90

∅P 3.75 3.85

Q 2.65 2.95

0015988_Rev_S

Doc ID 13154 Rev 4 11/15

Package mechanical data STD20NF20, STF20NF20, STP20NF20

TO-252 (DPAK) mechanical data

DIM.

V2 0

mm.

.xampyt.nim

04.202.2A

01.109.01A

32.030.02A

09.046.0b

04.502.54b

06.054.0c

06.084.02c

02.600.6D

01.51D

.6E

06.604

07.41E

82.2e

06.404.41e

01.0153.9H

08.21L

08.02L

106.04L

02.0R

12/15 Doc ID 13154 Rev 4

0068772_G

STD20NF20, STF20NF20, STP20NF20 Packaging mechanical data

5 Packaging mechanical data

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0.795

G 16.4 18.4 0.645 0.724

N 50 1.968

T 22.4 0.881

TAPE MECHANICAL DATA

DIM.

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

A0 6.8 7 0.267 0.275

B0 10.4 10.6 0.409 0.417

B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299

K0 2.55 2.75 0.100 0.108

P0 3.9 4.1 0.153 0.161

P1 7.9 8.1 0.311 0.319

P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

mm inch

MIN. MAX. MIN. MAX.

2500 2500

Doc ID 13154 Rev 4 13/15

Revision history STD20NF20, STF20NF20, STP20NF20

6 Revision history

Table 8. Revision history

Date Revision Changes

25-Jan-2007 1 First release

20-Mar-2007 2 Typo mistake in first page (order codes)

27-Apr-2007 3 Updates on Table 6: Dynamic

10-Dec-2009 4 Modified device summary on first page

14/15 Doc ID 13154 Rev 4

STD20NF20, STF20NF20, STP20NF20

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Doc ID 13154 Rev 4 15/15

ST MICROELECTRONICS STD20NF20 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

Table 1. Device summary

Figure 1. Internal schematic diagram

1 Electrical ratings

Table 2. Absolute maximum ratings

Table 3. Thermal data

Table 4. Avalanche characteristics

2 Electrical characteristics

Table 5. On/off states

Table 6. Dynamic

Table 7. Source drain diode

2.1 Electrical characteristics (curves)

3 Test circuits

Figure 16. Gate charge test circuit

Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

4 Package mechanical data

5 Packaging mechanical data

6 Revision history

Table 8. Revision history