ST MICROELECTRONICS STD1NK80Z Datasheet

STQ1NK80ZR-AP - STN1NK80Z

1

2

3

3

3

STD1NK80Z - STD1NK80Z-1

N-CHANNEL 800V - 13 Ω - 1 A TO-92 /SOT-223/DPAK/IPAK

Zener - Protected SuperMESH™ MOSFET

Table 1: General Features

TYPE V

STQ1NK80ZR-AP
STN1NK80Z
STD1NK80Z
STD1NK80Z-1

■ TYPICAL R

■ EXTREMELY HIGH dv /d t CAPABILITY

■ ESD IMPROVED CAPABILITY

■ 100% AVALANCHE TESTED

■ NEW HIGH VOLTAGE BENCHMARK

■ GATE CHARGE MINIMIZED

DS

DSSRDS(on)

800 V
800 V
800 V
800 V

(on) = 13Ω

< 16 Ω
< 16 Ω
< 16 Ω
< 16 Ω

I

D

0.3 A

0.25A

1.0 A

1.0 A

Pw

3 W

2.5 W
45 W
45 W

DESCRIPTION

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS

-

FET s including revolutionary MDmesh™ products.

Figure 1: Package

TO-92 (Ammopack)

1

DPAK

SOT-223

IPAK

Figure 2: Internal Schematic Diagram

2

2

1

APPLICATIONS

■ AC ADAPTORS AND BATTERY CHARGERS

■ SWITH MODE POWER SUPPLI ES ( SMPS)

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STQ1NK80ZR-AP Q1NK80ZR TO-92 AMMOPAK

STN1NK80Z N1NK80Z SOT-223 TAPE & REEL

STD1NK80ZT4 D1NK80Z DPAK TAPE & REEL

STD1NK80Z-1 D1NK80Z IPAK TUBE

Rev. 3

1/15January 2006

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

TO-92 SOT-223 DPAK/IPAK

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

T

j

T

stg

() Pulse wi dt h l i m i ted by safe operating area
(1) ISD ≤ 1 A, d i/dt ≤ 200 A/µs, VDD ≤ 640

Table 4: Thermal Data

Rthj-case Thermal Resistance Junction-case Max -- -- 2.78 °C/W

Rthj-amb(#) Thermal Resistance Junction-ambient Max 120 50 100 °C/W

Rthj-lead

T

l

(#) When m ounted on 1in ch² FR-4 BOARD, 2 oz Cu

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

800 V

800 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

()

Drain Current (pulsed) 5 A
Total Dissipation at TC = 25°C

0.3 0.25 1.0 A

0.19 0.16 0.63 A

3 2.5 45 W
Derating Factor 0.025 0.02 0.36 W /°C
Gate source ESD (HBM-C= 100pF, R= 1.5KΩ) 1000 V

Operating Junction Temperature
Storage Temperature

-55 to 150 °C

TO-92 SOT-223 DPAK/IPAK Unit

Thermal Resistance Junction-lead Max 40 -- -- °C/W
Maximum Lead Temperature For Soldering

260 -- 300 °C

Purpose

Table 5: Avalanche Characteristics

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive

1 A

(pulse width limited by Tj max)

E

AS

Single Pulse Avalanche Energy

50 mJ

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Table 6: GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown
Voltage

Igs=± 1mA (Open
Drain)

30 V

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

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STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 7: On/Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID = 1 mA, VGS = 0 800 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (VGS = 0)

Gate-body Leaka ge

VDS = Max Rating
VDS = Max Rating, TC = 125 °C

1

50

VGS = ± 20V ±10 µA

Current (VDS = 0)

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

VDS = VGS, ID = 50 µA

3 3.75 4.5 V

VGS = 10V, ID = 0.5 A 13 16 Ω

Resistance

Table 8: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(1) Forward Transconductance VDS = 15 V, ID = 0.5 A 0.8 S

fs

C

oss eq.

C

C

C

t

d(on)

t

d(off)

Q

Q

Q

iss

oss

rss

t

r

t

gs
gd

f

g

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Outpu t

Capacitance
Turn-on Delay Time

Rise Time
Turn-off Delay Time
Fall Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDS = 25 V, f = 1 MHz, VGS = 0 160

26

6.7

VGS = 0V, VDS = 0V to 640V 9.5 pF

VDD = 400 V, ID = 0.5 A
RG = 4.7Ω VGS = 10 V
(see Figure 21)

8
30
22
55

VDD = 640V, ID = 1.0 A,
VGS = 10V
(see Figure 24)

7.7

1.4

4.5

µA
µA

pF
pF
pF

ns
ns
ns
ns

nC
nC
nC

Table 9: Source Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

(2)

SDM

VSD (1)

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: P ul se duration = 300 µs, d ut y cy cle 1.5 %.

2. Pulse wi dt h l i m ited by safe op erating area.

3. C

Source-drain Current
Source-drain Current (pulsed)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

V

DSS

ISD = 1.0 A, VGS = 0
ISD = 1.0 A, di/dt = 100 A/µs

VDD = 50 V, Tj = 25°C
(see Figure 22)

ISD = 1.0 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150°C
(see Figure 22)

365
802

4.4

388

802.7

4.6

when VDS increases from 0 to 80%

oss

1.0
5

1.6 V

A
A

ns

nC

A

ns

nC

A

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STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1

Figure 3: Safe Operating Area for SOT-223

Figure 4: Safe Operating Area for TO-92

Figure 6: Thermal Impedan ce for SO T-223

Figure 7: Th erm al Impedan c e for TO-92

Figure 5: Safe Operating Area for IPAK-DPAK

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Figure 8: Thermal Impedance for DPAK-IPAK

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1

Figure 9: Output Characteristics

Figure 10: Transconductance

Figure 12: Transfer Characteristics

Figure 13: Static Drain-source On Resistance

Figure 11: Gate Charge vs Gate-source Voltage

Figure 14: Capacitance Variations

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STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1

Figure 15: Normalized Gate Thereshold Volt­age vs Temperature

Figure 16: S ource-Drain Diode Forward Char­acteristics

Figure 18: Normal ized On R esistance vs Tem­perature

Figure 19: Normalized BVdss vs Temperature

Figure 17: Avalanche Energy vs Star ting Tj

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STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1

Figure 20: Unclamped Inductive Load Test Cir­cuit

Figure 21: Switching Times Test Circuit For
Resistive Load

Figure 23: Unclamped Inductive Wafeform

Figure 24: Gate Charge Test Circuit

Figure 22: Test Circuit For Inductive Load
Switching and Diode Recovery Times

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STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, i n compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at:

www.st.com

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STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22. 4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1. 5 0.059

E 1.65 1.85 0.065 0.073

F 7. 4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

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STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1

TO-92 MECHANICAL DATA

DIM.

A 4.32 4.95 0.170 0.194
b 0.36 0.51 0.014 0.020
D 4.45 4.95 0.175 0.194
E 3.30 3.94 0.130 0.155
e 2.41 2.67 0.094 0.105

e1 1.14 1.40 0.044 0.055

L 12.70 15.49 0.50 0.610
R 2.16 2.41 0.085 0.094

S1 0.92 1.52 0.036 0.060

W 0.41 0.56 0.016 0.022

V5° 5°

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1

SOT-223 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.80 0.071

B 0.60 0.70 0.80 0.024 0.027 0.031

B1 2.90 3.00 3.10 0.114 0.118 0.122

c 0.24 0.26 0.32 0.009 0.010 0.013

D 6.30 6.50 6.70 0.248 0.256 0.264

e 2.30 0.090

e1 4.60 0.181

E 3.30 3.50 3.70 0.130 0.138 0.146

H 6.70 7.00 7.30 0.264 0.276 0.287

V10

A1 0.02

mm inch

o

10

o

P008B

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STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1

TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024

C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

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P032P_B

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1

TO-251 (IPAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023

C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

C

A

E

= =

C2

L2

B2

= =

D

B3

2

1 3

L1

B6

A1

L

A3

B

B5

G

= =

0068771-E

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STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1

Table 10: Revision History

Date Revision Description of Change s

08-Jun-2005 1 First Release

06-Sep-2005 2 Inserted Ecopack indication

16-Jan-2006 3 Corrected value on Table 3

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STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1

I

s
o
b

t

t

t

a

nformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence

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