STMicroelectronics STD17NF03L, STD17NF03L-1 Technical data

STD17NF03L

STD17NF03L-1

N-channel 30V - 0.038Ω - 17A - DPAK/IPAK

STripFET™ II Power MOSFET

General features

Type	VDSS	RDS(on)	ID
STD17NF03L-1	30V	<0.05Ω	17A
STD17NF03L	30V	<0.05Ω	17A

■Exceptional dv/dt capability

■Low gate charge at 100°C

■Application oriented characterization

■100% avalanche tested

Description

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Applications

■ Switching application

	3	3
	2	1
	1
	iPAK	DPAK

Internal schematic diagram

Order codes

Part number	Marking	Package	Packaging
STD17NF03L-1	D17NF03L@	IPAK	Tube
STD17NF03LT4	D17NF03L@	DPAK	Tape & reel

July 2006

Rev 3

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www.st.com

Contents	STD17NF03L - STD17NF03L-1

Contents

1	Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 3
2	Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		4
	2.1	Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	6
3	Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		8
4	Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		9
5	Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		12
6	Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		13

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STD17NF03L - STD17NF03L-1	Electrical ratings

1 Electrical ratings

Table 1.	Absolute maximum ratings
Symbol		Parameter	Value	Unit
VDS		Drain-source voltage (VGS = 0)	30	V
VDGR		Drain-gate voltage (RGS = 20 kΩ)	30	V
VGS		Gatesource voltage	± 16	V
ID		Drain current (continuous) at TC = 25°C	17	A
ID		Drain current (continuous) at TC = 100°C	12	A
(1)		Drain current (pulsed)	68	A
IDM
Ptot		Total dissipation at TC = 25°C	30	W
		Derating Factor	0.2	W/°C
dv/dt(2)		Peak diode recovery avalanche energy	7	V/ns
(3)		Single pulse avalanche energy	200	mJ
EAS
Tstg		Storage temperature	-55 to 175	°C
Tj		Max. operating junction temperature

1.Pulse width limited by safe operating area.

2.ISD ≤17A, di/dt ≤300A/µs, VDD =V(BR)DSS, Tj ≤TJMAX

3.Starting Tj = 25 °C, ID = 8.5A, VDD = 15V

Table 2.	Thermal data
Rthj-case	Thermal resistance junction-case max	5.0	°C/W
Rthj-amb	Thermal resistance junction-to ambient max	100	°C/W
TJ	Maximum lead temperature for soldering purpose	275	°C

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Electrical characteristics	STD17NF03L - STD17NF03L-1

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)
Table 3.	On/off states
Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250µA, VGS =0	30			V
	breakdown voltage
	Zero gate voltage	VDS = Max rating			1	µA
IDSS		VDS = Max rating,
	drain current (VGS = 0)				10	µA
		TC = 125°C
IGSS	Gate-body leakage	VGS = ± 16V			±100	nA
	current (VDS = 0)
VGS(th)	Gate threshold voltage	VDS = VGS, ID = 250µA	1	1.5	2.2	V
RDS(on)	Static drain-source on	VGS = 10V, ID = 8.5A		0.038	0.05	Ω
	resistance	VGS = 5V, ID = 8.5A		0.045	0.06	Ω

Table 4.	Dynamic
Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
(1)	Forward	VDS > ID(on) x		12		S
gfs	transconductance	RDS(on)max, , ID =8.5A
Ciss	Input capacitance			320		pF
	Output capacitance	VDS = 25V, f = 1MHz,
Coss				155		pF
	Reverse transfer	VGS = 0
Crss				28		pF
	capacitance
td(on)	Turn-on delay time	VDD = 15V, ID = 8.5A		11		ns
tr	Rise time			100		ns
		RG = 4.7Ω VGS = 5V
td(off)	Turn-off delay time			25		ns
		(see Figure 13)
tf	Fall time			22		ns
Qg	Total gate charge	VDD = 3024V, ID = 17A,		4.8	6.5	nC
Qgs	Gate-source charge	VGS = 5V, RG = 4.7Ω		2.25		nC
Qgd	Gate-drain charge	(see Figure 14)		1.7		nC

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

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STD17NF03L - STD17NF03L-1				Electrical characteristics
	Table 5.	Source drain diode
	Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
	ISD	Source-drain current				22	A
		Source-drain current
	(1)
	ISDM	(pulsed)				88	A
	(2)	Forward on voltage	ISD = 17A, VGS = 0			1.5	V
	VSD
	trr	Reverse recovery time	ISD = 17A, di/dt = 100A/µs,		28		ns
	Qrr	Reverse recovery charge	VDD = 15V, Tj = 150°C		18		nC
	IRRM	Reverse recovery current	(see Figure 15)		1.3		A

1.Pulse width limited by safe operating area.

2.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

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