ST MICROELECTRONICS STD16NF06L Datasheet

N-CHANNEL 60V - 0.060 Ω - 24A DPAK/IPAK

3

TYPE

V

DSS

STD16NF06L 60 V < 0.070 Ω 24 A

■ TYPICAL R

■ LOGIC LEVEL DEVICE

■ THROUGH-HOLE IPAK (TO-251) POWER

(on) = 0.060 Ω

DS

PACKAGE IN TUBE (SUFFIX “-1")

■ SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high p acking density for low onresistance, rugged ava lanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility

R

DS(on)

I

D

STD16NF06L

STripFET™ II POWER MOSFET

Figure 1:PackageTable 1: General Features

2

1

IPAK

TO-251

(Suffix “-1”)

(Suffix “T4”)

Figure 2: Internal Schematic Diagram

1

DPAK

TO-252

APPLICATIONS

■ SWITCHING APPLICATIONS

Table 2: Order Codes

STD16NF06LT4 D16NF06L TO-252 TAPE & REEL STD16NF06L-1 D16NF06L TO-251 TUBE

SALES TYPE MARKING PACKAGE PACKAGING

Table 3: ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

(•)

I

DM

P

tot

dv/dt

E

AS

T

stg

T

j

(•) Pulse width limited by safe operating area. (1) I

Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)

60 V

60 V Gate- source Voltage ± 18 V Drain Current (conti nuo us ) at TC = 25°C Drain Current (conti nuo us ) at TC = 100°C

24 A

17 A Drain Current (pulse d) 96 A Total Dissipation at TC = 25°C

40 W Derating Factor 0.27 W/°C

(1)

Peak Diode Recovery voltage slope 11.5 V/ns

(2)

Single Pulse Avalanche Energy 200 mJ Storage Temperature Operating Junction Temperature

≤16A, di/dt ≤200A/µs, VDD ≤ V

SD

(2) Starting Tj = 25 oC, ID = 20A, VDD= 48V

-55 to 175 °C

(BR)DSS

, Tj ≤ T

JMAX

Rev. 3.0

1/11March 2005

STD16NF06L

Table 4: THERMAL DATA

Rthj-case

Rthj-pcb

T

(*)

When Mounted on 1 inch2 FR-4 board, 2 oz of Cu

Thermal Resistance Junction-case

(*)

Thermal Resistance Junction-PCB

Maximum Lead Temperature For Soldering Purpose

l

(1.6 mm from case, for 10 sec)

Max Max

3.75 62

275

°C/W °C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

Table 5: OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source

= 250 µA, VGS = 0

D

60 V

Breakdown Voltage

= Max Rating

I

DSS

I

GSS

Table 6: ON

Zero Gate Voltage Drain Current (V

Gate-body Leakage Current (V

(5)

DS

= 0)

GS

= 0)

V

DS

= Max Rating TC = 125°C

V

DS

= ± 18V

V

GS

1

10

±100 nA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage Static Drain-source On

Resistance

V

= VGS ID = 250 µA

DS

V

= 10 V ID = 8 A

GS

= 5 V ID = 8 A

V

GS

1V

0.060

0.070

0.085

Table 7: DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance Input Capacitance

Output Capacitance Reverse Transfer Capacitance

V

15 V

V

DS =

DS

ID

= 25V f = 1 MHz VGS = 0

= 12 A

12 S

370

69 30

µA µA

Ω Ω

pF pF pF

2/11

STD16NF06L

ELECTRICAL CHARACTERISTICS (continued)

Table 8: SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q Q Q

t

r

g gs gd

Turn-on Delay Time Rise Time

Total Ga te Char ge Gate-Source Charg e Gate-Drain Charge

Table 9: SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off Delay Time Fall Time

Table 10: SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(1 )

Pulse width limited by safe operating area.

(2)

Pulsed: Pulse duration = 300 µs , duty cycle 1.5 %.

Source-drain Curre nt

)

Source-drain Curre nt (pu lse d)

(•

(*)

Forward On Voltage Reverse Recovery Time

Reverse Recovery Charge Reverse Recovery Current

= 30 V ID = 8 A

DD

=4.7 Ω VGS = 5 V

R

G

(Resistive Load, Figu re 17)

V

= 30 V ID= 16 A VGS= 5 V

DD

V

= 30 V ID = 8 A

DD

=4.7Ω, V

R

G

GS

= 5 V

(Resistive Load, Figu re 17)

I

= 64 A VGS = 0

SD

I

=16 A di/dt = 100A/µs

SD

= 25 V Tj = 150°C

V

DD

(see test circuit, Figure 19)

12 30

7.5

2.5

4.2

20

6

16 64

1.5 V

53 85

3.2

ns ns

nC nC nC

ns ns

A A

ns

µC

A

Figure 3: Safe Operating Area Figure 4: Therm al Im pe da nce

3/11

STD16NF06L

Figure 5: Output Characteristics Figure 6: Transf er Ch ar ac ter ist ics

Figure 7: Transconductance Figure 8: Static Drain-source On Resistance

Figure 9: Gate Charge vs Gate-source Voltage Figure 10: Capacitance Variations

4/11

STD16NF06L

Figure 11: Normalized Gate Threshold Voltage vs

Temperature

Figure 13: Source-drain Diode Forward

Characteristics

Figure 12: Normalized on Resist an c e vs Te mpe r at ur e

Figure 14: Normalized Breakdown Voltage vs

Temperature.

.

5/11

STD16NF06L

Figure 15: Unclamped Inductive Load Test Circuit

Figure 17: Switching Times Test Circuits For Resis-

tive Load

Figure 16: Unclamped Inductive Waveform

Figure 18: Gate Charge test Circuit

Figure 19: Test C ircuit For In ductive Lo ad Switchin g

And Diode Recovery Times

6/11

TO-252 (DPAK) MECHANICAL DAT A

STD16NF06L

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397 L2 0.8 0.031 L4 0.6 1 0.023 0.039

A

C2

E

==

L2

B2

==

H

DETAIL "A"

D

C

B

2

1 3

L4

A1

G

==

A2

DETAIL "A"

0068772-B

7/11

STD16NF06L

TO-251 (IPAK) MECHANICAL DAT A

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037

C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039

A

E

= =

C2

L2

B2

= =

H

C

A3

A1

B6

L

B

B5

G

= =

D

B3

2

1 3

L1

0068771-E

8/11

STD16NF06L

*on sales type

9/11

STD16NF06L

Table 11:Revision History

Date Revision Description of Changes

March 2005

3.0 ADDED PACKAGE TO-251

10/11

STD16NF06L

I

s

o

d

b

ct

t

ot

a

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f use of such information nor for any infrin gement of patents or other rights of third parties which may resul t from its use. No license is grant e y implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subje

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11/11

ST MICROELECTRONICS STD16NF06L Datasheet

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