ST MICROELECTRONICS STD12NF06 Datasheet

Features

3

Type

V

DSSS

R

DS(on)

STD12NF06

STD12NF06T4

N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK

STripFET™ II Power MOSFET

I

D

STD12NF06 60V <0.1Ω 12A

STD12NF06T4 60V <0.1Ω 12A

■ Exceptional dv/dt capability

■ Low gate charge

Applications

■ Switching application

Description

This Power MOSFET is the latest development of
STMicroelectronics unique "single feature size"
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.

3

1

DPAK

IPAK

Figure 1. Internal schematic diagram

2

1

Table 1. Device summary

Order codes Marking Package Packaging

STD12NF06T4T4 D12NF06 DPAK Tape and reel

STD12NF06T4-1 D12NF06 IPAK Tube

November 2009 Doc ID 8431 Rev 7 1/14

www.st.com

14

Contents STD12NF06, STD12NF06T4

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14 Doc ID 8431 Rev 7

STD12NF06, STD12NF06T4 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

I

DM

P

V

V

Drain-source voltage (VGS = 0) 60 V

DS

Drain-gate voltage (RGS = 20KΩ)60V

DGR

Gate-source voltage ± 20 V

GS

I

Drain current (continuous) at TC = 25°C 12 A

D

Drain current (continuous) at TC=100°C 8.5 A

I

D

(1)

Drain current (pulsed) 48 A

Total dissipation at TC = 25°C 30 W

TOT

Derating factor 0.2 W/°C

(2)

dv/dt

E

AS

T

Peak diode recovery voltage slope 15 V/ns

(3)

Single pulse avalanche energy 140 mJ

Storage temperature

stg

Max. operating junction temperature

T

J

-55 to 175 °C

1. Pulse width limited by safe operating area

2. I

≤ 12 A, di/dt ≤ 200 A/µs, V

SD

DS

≤ V

(BR)DSS

, TJ ≤ T

JMAX

3. Starting TJ = 25 oC, ID = 6 A, VDD = 30 V

Table 3. Thermal data

Symbol Parameter Value Unit

R

R

Thermal resistance junction-case Max 5 °C/W

thJC

Thermal resistance junction-ambient Max 100 °C/W

thJA

Maximum lead temperature for soldering

T

l

purpose

275 °C

Doc ID 8431 Rev 7 3/14

Electrical characteristics STD12NF06, STD12NF06T4

2 Electrical characteristics

(T

=25°C unless otherwise specified)

CASE

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current (VGS = 0)

Gate body leakage current

= 0)

(V

DS

= 25mA, V

I

D

= Max rating

V

DS

= Max rating, TC = 125°C

V

DS

V

= ±20V ±100 nA

GS

= 0 60 V

GS

110µA

Gate threshold voltage VDS= VGS, ID = 250µA 2 3 4 V

Static drain-source on
resistance

V

= 10V, ID = 6A 0.08 0.1 W

GS

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

g

fs

C
C
C

Forward transconductance VDS = 15V, ID = 6A - 5 S

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

V

= 25V, f = 1 MHz,

DS

= 0

V

GS

315

-

70
30

µA

pF
pF
pF

Q
Q
Q

1. Pulsed: pulse duration=300 µs, duty cycle 1.5%

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

4/14 Doc ID 8431 Rev 7

Turn-on delay time

t

Rise time

r

Turn-off delay time
Fall time

t

f

VDD = 48V, ID = 12A

= 10V

V

GS

= 30V, ID = 6A,

V

DD

= 4.7Ω, V

R

G

GS

= 10V

Figure 14 on page 8

-103.0

-

18
17

7

6

3.5

12

-

nC
nC
nC

ns
ns
ns
ns

STD12NF06, STD12NF06T4 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

V

I

I

SDM

SD

Q

I

RRM

Source-drain current - 12 A

SD

Source-drain current (pulsed) - 48 A

(1)

Forward on voltage I

Reverse recovery time

t

rr

Reverse recovery charge

rr

Reverse recovery current

I
di/dt = 100A/µs,
V

Figure 16 on page 8

1. Pulsed: pulse duration= 300 µs, duty cycle 1.5%

= 12A, V

SD

= 12A,

SD

= 30V, TJ = 150°C

DD

GS

= 0 - 1.3 V

50

-

65

nC

3.5

ns

A

Doc ID 8431 Rev 7 5/14