ST MICROELECTRONICS STD12NF06 Datasheet

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Features

Type

DSSS

DS(on)

STD12NF06

STD12NF06T4

N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK

STripFET™ II Power MOSFET

STD12NF06 60V <0.1Ω 12A

STD12NF06T4 60V <0.1Ω 12A

■ Exceptional dv/dt capability

■ Low gate charge

Applications

■ Switching application

Description

This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

DPAK

IPAK

Figure 1. Internal schematic diagram

Table 1. Device summary

Order codes Marking Package Packaging

STD12NF06T4T4 D12NF06 DPAK Tape and reel

STD12NF06T4-1 D12NF06 IPAK Tube

November 2009 Doc ID 8431 Rev 7 1/14

www.st.com

Contents STD12NF06, STD12NF06T4

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14 Doc ID 8431 Rev 7

STD12NF06, STD12NF06T4 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

Drain-source voltage (VGS = 0) 60 V

Drain-gate voltage (RGS = 20KΩ)60V

DGR

Gate-source voltage ± 20 V

Drain current (continuous) at TC = 25°C 12 A

Drain current (continuous) at TC=100°C 8.5 A

(1)

Drain current (pulsed) 48 A

Total dissipation at TC = 25°C 30 W

TOT

Derating factor 0.2 W/°C

(2)

dv/dt

Peak diode recovery voltage slope 15 V/ns

(3)

Single pulse avalanche energy 140 mJ

Storage temperature

stg

Max. operating junction temperature

-55 to 175 °C

1. Pulse width limited by safe operating area

2. I

≤ 12 A, di/dt ≤ 200 A/µs, V

≤ V

(BR)DSS

, TJ ≤ T

JMAX

3. Starting TJ = 25 oC, ID = 6 A, VDD = 30 V

Table 3. Thermal data

Symbol Parameter Value Unit

Thermal resistance junction-case Max 5 °C/W

thJC

Thermal resistance junction-ambient Max 100 °C/W

thJA

Maximum lead temperature for soldering

purpose

275 °C

Doc ID 8431 Rev 7 3/14

Electrical characteristics STD12NF06, STD12NF06T4

2 Electrical characteristics

=25°C unless otherwise specified)

CASE

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

(BR)DSS

DSS

GSS

GS(th)

DS(on)

Drain-source breakdown voltage

Zero gate voltage drain current (VGS = 0)

Gate body leakage current

= 0)

= 25mA, V

= Max rating

= Max rating, TC = 125°C

= ±20V ±100 nA

= 0 60 V

110µA

Gate threshold voltage VDS= VGS, ID = 250µA 2 3 4 V

Static drain-source on resistance

= 10V, ID = 6A 0.08 0.1 W

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

C C C

Forward transconductance VDS = 15V, ID = 6A - 5 S

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

= 25V, f = 1 MHz,

= 0

315

70 30

µA

pF pF pF

Q Q Q

1. Pulsed: pulse duration=300 µs, duty cycle 1.5%

Total gate charge

Gate-source charge

Gate-drain charge

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

d(on)

d(off)

4/14 Doc ID 8431 Rev 7

Turn-on delay time

Rise time

Turn-off delay time Fall time

VDD = 48V, ID = 12A

= 10V

= 30V, ID = 6A,

= 4.7Ω, V

= 10V

Figure 14 on page 8

-103.0

18 17

3.5

nC nC nC

ns ns ns ns

STD12NF06, STD12NF06T4 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

SDM

RRM

Source-drain current - 12 A

Source-drain current (pulsed) - 48 A

(1)

Forward on voltage I

Reverse recovery time

Reverse recovery charge

Reverse recovery current

I di/dt = 100A/µs, V

Figure 16 on page 8

1. Pulsed: pulse duration= 300 µs, duty cycle 1.5%

= 12A, V

= 12A,

= 30V, TJ = 150°C

= 0 - 1.3 V

3.5

Doc ID 8431 Rev 7 5/14

Electrical characteristics STD12NF06, STD12NF06T4

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Transconductance Figure 7. Static drain-source on resistance

6/14 Doc ID 8431 Rev 7

STD12NF06, STD12NF06T4 Electrical characteristics

Figure 8. Gate charge vs. gate-source

voltage

Figure 10. Normalized gate threshold voltage

vs. temperature

Figure 9. Capacitance variations

Figure 11. Normalized on resistance vs.

temperature

Figure 12. Source-drain diode forward

characteristics

Figure 13. Normalized breakdown voltage vs.

temperature

Doc ID 8431 Rev 7 7/14

Test circuits STD12NF06, STD12NF06T4

3 Test circuits

Figure 14. Switching times test circuit for

resistive load

Figure 16. Test circuit for inductive load

switching and diode recovery times

Figure 15. Gate charge test circuit

Figure 17. Unclamped inductive load test

circuit

Figure 18. Unclamped inductive waveform

8/14 Doc ID 8431 Rev 7

STD12NF06, STD12NF06T4 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Doc ID 8431 Rev 7 9/14

Package mechanical data STD12NF06, STD12NF06T4

TO-251 (IPAK) mechanical data

DIM.

min. typ max.

mm.

A 2.20 2.40

A1 0.901.10

b 0.64 0.90

b2 0.95

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

E 6.40 6.60

e2.28

e1 4.40 4.60

H 16.10

L 9.00 9.40

(L1) 0.801.20

L2 0.80

10/14 Doc ID 8431 Rev 7

0068771_H

STD12NF06, STD12NF06T4 Package mechanical data

DIM.

mm.

min. typ max.

A 2.20 2.40

A1 0.901.10

A2 0.03 0.23

b 0.64 0.90

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

D1 5.10

E 6.40 6.60

E1 4.70

e2.28

e1 4.40 4.60

H 9.35 10.10

L1 2.80

L2 0.80

L4 0.60 1

R0.20

V2 0

TO-252 (DPAK) mechanical data

0068772_G

Doc ID 8431 Rev 7 11/14

Packaging mechanical data STD12NF06, STD12NF06T4

5 Packaging mechanical data

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0.795

G 16.4 18.4 0.645 0.724

N 50 1.968

T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275

B0 10.4 10.6 0.409 0.417

B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299

K0 2.55 2.75 0.100 0.108

P0 3.9 4.1 0.153 0.161

P1 7.9 8.1 0.311 0.319

P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

mm inch

MIN. MAX. MIN. MAX.

12/14 Doc ID 8431 Rev 7

BASE QTY BULK QTY

2500 2500

STD12NF06, STD12NF06T4 Revision history

6 Revision history

Table 8. Document revision history

Date Revision Changes

09-Sep-2004 3 Complete document

07-Aug-2006 4 The document has been reformatted

19-Feb-2007 5 Typo mistake on page 1

15-Apr-2009 6

26-Nov-2009 7 Updated Q

Table 1: Device summary has been updated

Mechanical data updated

in Table 7: Source drain diode.

Doc ID 8431 Rev 7 13/14

STD12NF06, STD12NF06T4

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14/14 Doc ID 8431 Rev 7

ST MICROELECTRONICS STD12NF06 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

Figure 1. Internal schematic diagram

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

Table 3. Thermal data

2 Electrical characteristics

Table 4. On /off states

Table 5. Dynamic

Table 6. Switching times

Table 7. Source drain diode

2.1 Electrical characteristics (curves)

Figure 9. Capacitance variations

3 Test circuits

Figure 15. Gate charge test circuit

Figure 18. Unclamped inductive waveform

4 Package mechanical data

5 Packaging mechanical data

6 Revision history

Table 8. Document revision history