STD10P6F6, STF10P6F6,
, TAB
AM11258v1
DPAK
1
3
TAB
1
2
3
TAB
TO-220
3
2
1
TAB
IPAK
1
2
3
TO-220FP
STP10P6F6, STU10P6F6
P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6
Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet − production data
Features
Figure 1. Internal schematic diagram
Order codes V
DS
R
DS(on)
max I
D
STD10P6F6
STF10P6F6
STP10P6F6
-60 V 0.16 Ω -10 A
STU10P6F6
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
These devices are P-channel Power MOSFETs
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFETs exhibit very low R
packages.
DS(on)
in all
Table 1. Device summary
Order codes Marking Package Packing
STD10P6F6
DPAK Tape and reel
STF10P6F6 TO-220FP
10P6F6
TubeSTP10P6F6 TO-220
STU10P6F6 IPAK
July 2015 DocID022967 Rev 5 1/24
This is information on a product in full production.
www.st.com
Contents STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 DP AK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2 DP AK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.4 TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.5 IPAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
2/24 DocID022967 Rev 5
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol Parameter
Drain-source voltage -60 V
DS
Gate-source voltage ± 20 V
GS
(1)
Drain current (continuous) at TC = 25 °C -10 A
Drain current (continuous) at TC = 100 °C -7.2 A
D
(2)
Drain current (pulsed) -40 A
Total dissipation at TC = 25 °C 35 20 30 W
Single pulse avalanche energy
AS
(starting T
=25 °C, ID=-3 A, VDD=40 V)
J
I
DM
P
V
V
I
D
E
I
TOT
Insulation withstand voltage (RMS) from all
V
ISO
three leads to external heat sink
(t=1 s; TC=25 °C)
V
T
T
1. Limited by package
2. Pulse width limited by safe operating area
Drain-gate voltage (V
DG
Storage temperature -55 to 175 °C
stg
Max. operating junction temperature 175 °C
j
= 0) -20 V
GS
DPAK
IPAK
Unit
TO-220FP TO-220
80 mJ
2500 V
Table 3. Thermal data
Symbol Parameter
R
thj-case
R
thj-amb
R
thj-pcb
1. When mounted on 1 inch2 FR-4, 2 Oz copper board
Thermal resistance junction-case max 4.29 7.5 5 °C/W
Thermal resistance junction-ambient max 100 62.5 62.5 °C/W
Thermal resistance junc tion-pcb m ax
DocID022967 Rev 5 3/24
Value
DPAK IPAK TO-220FP TO-220
(1)
50 °C/W
Unit
24
Electrical characteristics STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
2 Electrical characteristics
(T
= 25 °C unless otherwise specified).
CASE
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakd own
Voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
= 0)
DS
Gate threshold voltage V
Stati c drai n-s ourc e on-
resistance
ID = -250 µA, VGS= 0 V -60 V
V
= -60 V -1 µA
DS
V
= -60 V, Tc = 125 °C -10 µA
DS
= ±20 V
V
GS
= VGS, ID = -250 µA -2 -4 V
DS
= -10 V, ID = -5 A 0.13 0.16 Ω
V
GS
±
100 nA
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
C
C
Q
Q
Q
Input capacitance
iss
V
Output capacitance - 40 - pF
oss
Reverse transfer
rss
capacitance
Total gate charge
g
Gate-source charge - 1.7 - nC
gs
Gate-drain charge - 1.7 - nC
gd
= -48 V , f=1 MHz,
DS
V
= 0 V
GS
V
= -30 V, ID = -10 A
DD
V
= -10 V
GS
(see Figure 16)
-340-pF
-20-pF
-6.4-nC
Table 6. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
4/24 DocID022967 Rev 5
Turn-on delay time
= -48 V, ID = -5 A,
V
t
Rise time - 5.3 - ns
r
Turn-of f del ay time - 14 - ns
t
Fall time - 3.7 - ns
f
DD
RG = 4.7 Ω, V
(see Figure 15)
GS
-64 - ns
= -10 V
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 Electrical characteristics
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Source-drain current - -10 A
(1)
Source-drain current (pulse d) - -40 A
(2)
Forward on voltage I
Reverse recovery time I
rr
Reverse recovery charge - 17.8 nC
rr
Reverse recovery current - -1.8 A
= -5 A, V
SD
= -10 A,
SD
GS
di/dt = -100 A/µs,
V
= -48 V
DD
(see Figure 17)
= 0 V - -1.1 V
-20 ns
DocID022967 Rev 5 5/24
24
Electrical characteristics STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
I
D
0.1
0.01
0.1
1
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
100µs
1ms
10ms
Tj= 175°C
Tc=25°C
Single
pulse
1
10
AM15408v1
I
D
1
0.1
0.1
1
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
100µs
1ms
10ms
Tj= 175°C
Tc=25°C
Single
pulse
10
AM15492v1
I
D
15
10
5
0
0
10
V
DS
(V)
(A)
5
20
VGS= 4 V
VGS= 5 V
VGS= 10 V
25
VGS= 6 V
AM15340v1
2.1 Electrical characteristics (curves)
Note: For the P-channel Power MOSFET, current and voltage polarities are reversed.
Figure 2. Safe operating area for DPAK, TO-220
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 3. Thermal impedance DPAK, TO-220
and IPAK
K
δ=0.5
-1
10
-2
10
-5
10
K
δ=0.5
0.01
Single pulse
-4
10
and IPAK
0.05
0.02
-3
10
0.2
10
GIPG180420141107SA
0.1
-2
10
-1
pcb
t
p(s)
AM15493v1
Figure 6. Output characteristics Figure 7. Transfer characteristics
6/24 DocID022967 Rev 5
10
10
-2
10
-1
0.05
0.02
Single pulse
0.01
-5
I
-4
10
D
10
-3
10
-2
-1
t
p
(s)
10
AM15346v1
(A)
25
VDS= 9 V
15
10
5
0
4
2
3
6
7208
5
9
10
V
GS
(V)
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 Electrical characteristics
V
GS
6
4
2
0
0
2
Q
g
(nC)
(V)
8
4
6
10
VDD=30V
I
D
=10A
AM15341v2
C
150
100
50
0
0
20
V
DS
(V)
(pF)
10
30
Ciss
Coss
Crss
40
50
200
250
300
350
400
AM15342v1
V
GS(th)
0.90
0.80
0.70
0.60
-55
-5
T
J
(°C)
(norm)
-30
1
70
20
45
95
120
1.10
ID=250 µA
AM15344v1
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
R
DS(on)
(mΩ)
VGS=10V
180
160
140
120
100
2
3
1
4
Figure 10. Capacitance variations Figure 11. Normalized V
V
(BR)DSS
(norm)
1.15
1.10
D
= 1mA
I
6
579
(BR)DSS
8
vs temperature
AM15350v1
D
(A)
I
AM15349v1
Figure 12. Normalized gate threshold voltage vs
temperature
1.05
1
0.95
0.90
-55
-30
20
-5
45
70
95
120
T
J
(°C)
Figure 13. Normalized on-resistance vs
temperature
R
DS(on)
(norm)
2
VGS=10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-55
-30
-5
20
45
70
95
120
DocID022967 Rev 5 7/24
AM15350v1
T
J
(°C)
24
Electrical characteristics STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
V
SD
2
6
I
SD
(A)
(V)
4
8
0.55
0.65
0.75
0.85
0.95
1.05
TJ=-55°C
TJ=175°C
TJ=25°C
AM15345v1
Figure 14. Source-drain diode forward
characteristics
8/24 DocID022967 Rev 5
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