ST MICROELECTRONICS STD10NF10 Datasheet
General features
3
Type
V
DSSS
STD10NF10
STD10NF10-1
N-channel 100V - 0.115Ω - 13A - DPAK - IPAK
Low gate charge STripFET™ II Power MOSFET
R
DS(on)
I
D
STD10NF10 100V <0.13Ω 13A
STD10NF10-1 100V <0.13Ω 13A
■ Exceptional dv/dt capability
■ Application oriented characterization
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Applications
■ Switching application
3
1
DPAK
IPAK
Internal schematic diagram
2
1
Order codes
Part number Marking Package Packaging
STD10NF10T4 D10NF10 DPAK Tape & reel
STD10NF10-1 D10NF10 IPAK Tube
August 2006 Rev 3 1/14
www.st.com
14
Contents STD10NF10
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STD10NF10 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
I
DM
P
V
V
Drain-source voltage (VGS = 0) 100 V
DS
Drain-gate voltage (RGS = 20KΩ) 100 V
DGR
Gate-source voltage ± 20 V
GS
I
Drain current (continuous) at TC = 25°C 13 A
D
Drain current (continuous) at TC=100°C 9 A
I
D
(1)
Drain current (pulsed) 52 A
Total dissipation at TC = 25°C 50 W
TOT
Derating factor 0.33 W/°C
(2)
E
AS
dv/dt
T
1. Pulse width limited by safe operating area
2. Starting TJ = 25 oC, ID = 15A, VDD = 50V
3. I
Single pulse avalanche energy 70 mJ
(3)
Peak diode recovery voltage slope 9 V/ns
Storage temperature
stg
Max. operating junction temperature
T
J
≤ 13A, di/dt ≤ 300 A/µs, V
SD
DS
≤ V
(BR)DSS
, TJ ≤ T
JMAX
-55 to 175 °C
Table 2. Thermal data
Symbol Parameter Value Unit
R
R
Thermal resistance junction-case Max 3.0 °C/W
thJC
Thermal resistance junction-ambient Max 100 °C/W
thJA
Maximum lead temperature for soldering
T
l
purpose
300 °C
3/14
Electrical characteristics STD10NF10
2 Electrical characteristics
(T
= 25°C unless otherwise specified)
CASE
Table 3. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage
Static drain-source on
resistance
= 250µA, V
I
D
= Max rating
V
DS
V
= Max rating,
DS
TC = 125°C
V
= ±20V
GS
= VGS, ID = 250µA
V
DS
V
= 10V, ID = 5A
GS
GS
= 0
100 V
1
10
±100 nA
23 4V
0.115 0.13 Ω
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Q
Q
Q
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance VDS = 15V, ID = 5A 20 S
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
g
Total gate charge
Gate-source charge
gs
Gate-drain charge
gd
= 25V, f = 1 MHz,
V
DS
= 0
V
GS
= 80V, ID = 10A
V
DD
V
= 10V
GS
460
70
30
15.3
3.7
4.7
21
µA
µA
pF
pF
pF
nC
nC
nC
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
4/14
Turn-on delay time
t
Rise time
r
Turn-off delay time
Fall time
t
f
V
R
Figure 13 on page 8
= 27V, ID = 5A,
DD
= 4.7Ω, V
G
GS
= 10V
16
25
32
ns
ns
ns
8
ns
STD10NF10 Electrical characteristics
Table 6. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
I
SDM
V
SD
Q
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current 13 A
SD
(1)
Source-drain current (pulsed) 52 A
(2)
Forward on voltage
t
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
I
I
SD
SD
= 10A, V
= 10A,
GS
= 0
di/dt = 100A/µs,
= 50V, TJ = 150°C
V
DD
Figure 15 on page 8
90
230
5
1.5 V
ns
µC
A
5/14
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