This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Figure 5.TransconductanceFigure 6.Static drain-source on resistance
6/14
Page 7
STD10NF10Electrical characteristics
Figure 7.Gate charge vs gate-source voltage Figure 8.Capacitance variations
Figure 9.Normalized gate threshold voltage
vs temperature
Figure 11. Source-drain diode forward
characteristics
Figure 10. Normalized on resistance vs
temperature
Figure 12. Normalized breakdown voltage vs
temperature
7/14
Page 8
Test circuitSTD10NF10
3 Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 14. Gate charge test circuit
Figure 16. Unclamped Inductive load test
circuit
Figure 17. Unclamped inductive waveform
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Page 9
STD10NF10Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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