ST MICROELECTRONICS STD10NF10 Datasheet

Page 1
General features
3
Type
V
DSSS
STD10NF10
STD10NF10-1
N-channel 100V - 0.115Ω - 13A - DPAK - IPAK
Low gate charge STripFET™ II Power MOSFET
R
DS(on)
I
D
STD10NF10 100V <0.13 13A
STD10NF10-1 100V <0.13 13A
Exceptional dv/dt capability
Description
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high­efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
Applications
Switching application
3
1
DPAK
IPAK
Internal schematic diagram
2
1
Order codes
Part number Marking Package Packaging
STD10NF10T4 D10NF10 DPAK Tape & reel
STD10NF10-1 D10NF10 IPAK Tube
August 2006 Rev 3 1/14
www.st.com
14
Page 2
Contents STD10NF10
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
Page 3
STD10NF10 Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit
V
I
DM
P
V
V
Drain-source voltage (VGS = 0) 100 V
DS
Drain-gate voltage (RGS = 20KΩ) 100 V
DGR
Gate-source voltage ± 20 V
GS
I
Drain current (continuous) at TC = 25°C 13 A
D
Drain current (continuous) at TC=100°C 9 A
I
D
(1)
Drain current (pulsed) 52 A
Total dissipation at TC = 25°C 50 W
TOT
Derating factor 0.33 W/°C
(2)
E
AS
dv/dt
T
1. Pulse width limited by safe operating area
2. Starting TJ = 25 oC, ID = 15A, VDD = 50V
3. I
Single pulse avalanche energy 70 mJ
(3)
Peak diode recovery voltage slope 9 V/ns
Storage temperature
stg
Max. operating junction temperature
T
J
13A, di/dt 300 A/µs, V
SD
DS
V
(BR)DSS
, TJ ≤ T
JMAX
-55 to 175 °C

Table 2. Thermal data

Symbol Parameter Value Unit
R
R
Thermal resistance junction-case Max 3.0 °C/W
thJC
Thermal resistance junction-ambient Max 100 °C/W
thJA
Maximum lead temperature for soldering
T
l
purpose
300 °C
3/14
Page 4
Electrical characteristics STD10NF10

2 Electrical characteristics

(T
= 25°C unless otherwise specified)
CASE

Table 3. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown voltage
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage
Static drain-source on resistance
= 250µA, V
I
D
= Max rating
V
DS
V
= Max rating,
DS
TC = 125°C
V
= ±20V
GS
= VGS, ID = 250µA
V
DS
V
= 10V, ID = 5A
GS
GS
= 0
100 V
1
10
±100 nA
23 4V
0.115 0.13

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Q
Q
Q
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance VDS = 15V, ID = 5A 20 S
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
g
Total gate charge Gate-source charge
gs
Gate-drain charge
gd
= 25V, f = 1 MHz,
V
DS
= 0
V
GS
= 80V, ID = 10A
V
DD
V
= 10V
GS
460
70 30
15.3
3.7
4.7
21
µA µA
pF pF pF
nC nC nC

Table 5. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
4/14
Turn-on delay time
t
Rise time
r
Turn-off delay time Fall time
t
f
V
R
Figure 13 on page 8
= 27V, ID = 5A,
DD
= 4.7Ω, V
G
GS
= 10V
16 25 32
ns ns ns
8
ns
Page 5
STD10NF10 Electrical characteristics

Table 6. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit
I
I
SDM
V
SD
Q
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current 13 A
SD
(1)
Source-drain current (pulsed) 52 A
(2)
Forward on voltage
t
rr
Reverse recovery time Reverse recovery charge
rr
Reverse recovery current
I
I
SD
SD
= 10A, V
= 10A,
GS
= 0
di/dt = 100A/µs,
= 50V, TJ = 150°C
V
DD
Figure 15 on page 8
90
230
5
1.5 V
ns
µC
A
5/14
Page 6
Electrical characteristics STD10NF10

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
6/14
Page 7
STD10NF10 Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs temperature
Figure 11. Source-drain diode forward
characteristics
Figure 10. Normalized on resistance vs
temperature
Figure 12. Normalized breakdown voltage vs
temperature
7/14
Page 8
Test circuit STD10NF10

3 Test circuit

Figure 13. Switching times test circuit for
resistive load
Figure 15. Test circuit for inductive load
switching and diode recovery times

Figure 14. Gate charge test circuit

Figure 16. Unclamped Inductive load test
circuit

Figure 17. Unclamped inductive waveform

8/14
Page 9
STD10NF10 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
9/14
Page 10
Package mechanical data STD10NF10
TO-251 (IPAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
H
C
A
C2
D
E
= =
L2
B2
= =
10/14
A1
L
B3
B6
B
2
1 3
L1
B5
A3
G
= =
0068771-E
Page 11
STD10NF10 Package mechanical data
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035 b4 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244 D1 5.1 0.200
E 6.4 6.6 0.252 0.260 E1 4.7 0.185
e 2.28 0.090 e1 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L 1 0.039
(L1) 2.8 0.110
L2 0.8 0.031 L4 0.6 1 0.023 0.039
R 0.2 0.008 V2
DPAK MECHANICAL DATA
0068772-F
11/14
Page 12
Packaging mechanical data STD10NF10

5 Packaging mechanical data

DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
12/14
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
2500 2500
Page 13
STD10NF10 Revision history

6 Revision history

Table 7. Revision history

Date Revision Changes
09-Sep-2004 3 Complete version
07-Aug-2006 3 New template, updated SOA
13/14
Page 14
STD10NF10
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