STMicroelectronics STP80NF55-08, STB80NF55-08, STB80NF55-08-1 Technical data

STP80NF55-08 STB80NF55-08 STB80NF55-08-1

N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET

TYPE	VDSS	RDS(on)	ID
STB80NF55-08/-1	55 V	<0.008 Ω	80 A
STP80NF55-08	55 V	<0.008 Ω	80 A

■TYPICAL RDS(on) = 0.0065Ω

■LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

	1	3	2	3
		1
	D2PAK	I2PAK
		TO-262
	TO-263
		3
		2
		1
		TO-220

	APPLICATIONS		INTERNAL SCHEMATIC DIAGRAM
	■	SOLENOID AND RELAY DRIVERS
	■	MOTOR CONTROL, AUDIO AMPLIFIERS

■DC-DC CONVERTERS

■AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

	Symbol	Parameter	Value	Unit
	VDS	Drain-source Voltage (VGS = 0)	55	V
	VDGR	Drain-gate Voltage (RGS = 20 kΩ)	55	V
	VGS	Gatesource Voltage	± 20	V
	ID(∙)	Drain Current (continuos) at TC = 25°C	80	A
	ID	Drain Current (continuos) at TC = 100°C	57	A
	IDM(∙∙)	Drain Current (pulsed)	320	A
	Ptot	Total Dissipation at TC = 25°C	300	W
		Derating Factor	2	W/°C
	EAS (1)	Single Pulse Avalanche Energy	870	mJ
	Tstg	Storage Temperature	-55 to 175	°C
	Tj	Max. Operating Junction Temperature
	(∙) Current limited by package		(1) Starting Tj = 25 oC, ID = 40A, VDD = 30V
	(∙∙) Pulse width limited by safe operating area.
	March 2002			1/11

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STB80NF55-08/-1 STP80NF55-08

THERMAL DATA

Rthj-case	Thermal Resistance Junction-case	Max	0.5	°C/W
Rthj-amb	Thermal Resistance Junction-ambient	Max	62.5	°C/W
Tl	Maximum Lead Temperature For Soldering Purpose	Typ	300	°C

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA	VGS = 0	55			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating				1	µA
	Drain Current (VGS = 0)	VDS = Max Rating TC = 125°C				10	µA
IGSS	Gate-body Leakage	VGS = ± 20V				±100	nA
	Current (VDS = 0)

ON (*)

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS	ID = 250 µA	2	3	4	V
RDS(on)	Static Drain-source On	VGS = 10 V	ID = 40 A		0.0065	0.008	Ω
	Resistance

DYNAMIC

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
gfs (*)	Forward Transconductance	VDS = 15 V	ID = 18 A		40		S
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0			3850		pF
Coss	Output Capacitance				800		pF
Crss	Reverse Transfer				250		pF
	Capacitance

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STB80NF55-08/-1 STP80NF55-08

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 30 V	ID = 40 A		25		ns
tr	Rise Time	RG = 4.7 Ω	VGS = 10 V		85		ns
		(Resistive Load, Figure 3)
Qg	Total Gate Charge	VDD = 44V ID = 80 A VGS= 10V			115	155	nC
Qgs	Gate-Source Charge				24		nC
Qgd	Gate-Drain Charge				46		nC

SWITCHING OFF

Symbol	Parameter	Test Conditions			Min.	Typ.	Max.	Unit
td(off)	Turn-off Delay Time	VDD = 30 V	ID = 40	A		70		ns
tf	Fall Time	RG = 4.7Ω,	VGS = 10	V		25		ns
		(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ISD	Source-drain Current					80	A
ISDM (∙)	Source-drain Current (pulsed)					320	A
VSD (*)	Forward On Voltage	ISD = 80 A	VGS = 0			1.5	V
trr	Reverse Recovery Time	ISD = 80 A	di/dt = 100A/µs		80		ns
Qrr	Reverse Recovery Charge	VDD = 25 V	Tj = 150°C		245		nC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)			6.4		A

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (∙)Pulse width limited by safe operating area.

Safe Operating Area

Thermal Impedance

3/11

STB80NF55-08/-1 STP80NF55-08

Output Characteristics	Transfer Characteristics

Transconductance

Gate Charge vs Gate-source Voltage

4/11

Static Drain-source On Resistance

Capacitance Variations