Page 1
N-channel 75V - 0.009Ω - 75A - D2PA K
Features
Type V
STB75NF75L 75V <0.011Ω 75A
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Low threshold drive
DSS
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
R
DS(on)
I
D
STB75NF75L
STripFET™ II Power MOSFET
3
1
D²PAK
Figure 1. Internal schematic diagram
Applications
■ Switching applications
Table 1. Device summary
Order code Marking Package Packaging
STB75NF75LT4 B75NF75L D²PAK Tape & reel
July 2007 Rev 3 1/13
www.st.com
13
Page 2
Contents STB75NF75L
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
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STB75NF75L Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
V
V
I
D
DM
P
DS
GS
I
D
TOT
Drain-source voltage (VGS = 0) 75 V
Gate-source voltage ± 15 V
(1)
Drain current (continuous) at TC = 25°C 75 A
Drain current (continuous) at TC = 100°C 70 A
(2)
Drain current (pulsed) 300 A
Total dissipation at TC = 25°C 300 W
Derating factor 2 W/°C
(3)
dv/dt
E
AS
T
T
stg
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 75A, di/dt ≤ 500A/µs, VDD ≤ V
4. Starting TJ = 25 oC, ID = 37.5A, VDD = 30V
Peak diode recovery voltage slope 10 V/ns
(4)
Single pulse avalanche energy 680 mJ
Operating junction temperature
J
Storage temperature
(BR)DSS
, Tj ≤ T
JMAX
-55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
R
thJC
thJA
T
l
Thermal resistance junction-case Max 0.5 °C/W
Thermal resistance junction-ambient Max 62.5 °C/W
Maximum lead temperature for soldering
purpose
300 °C
3/13
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Electrical characteristics STB75NF75L
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage
Static drain-source on
resistance
= 250µA, VGS= 0
I
D
V
= Max rating,
DS
V
= Max rating @125°C
DS
= ±15V
V
GS
= VGS, ID = 250µA
V
DS
= 10V, ID= 37.5A
V
GS
= 5V, ID= 37.5A
V
GS
75 V
1
10
±100 nA
12.5V
0.009
0.010
0.011
0.013
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Forward transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
= 15V, ID = 37.5A
V
DS
V
=25V, f = 1 MHz,
DS
= 0
V
GS
120 S
4300
660
205
µA
µA
Ω
Ω
pF
pF
pF
Q
g
Total gate charge
Q
Q
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Gate-source charge
gs
Gate-drain charge
gd
VDD = 60V, ID = 75A
V
see Figure 15
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
4/13
Turn-on delay time
t
Rise time
r
Turn-off delay time
Fall time
t
f
V
R
see Figure 14
= 5V
GS
= 40V, ID = 37.5A,
DD
= 4.7Ω, V
G
GS
= 4.5V
75
18
31
35
155
110
60
90 nC
nC
nC
ns
ns
ns
ns
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STB75NF75L Electrical characteristics
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current 75 A
(1)
Source-drain current (pulsed) 300 A
(2)
Forward on voltage
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
I
= 75A, V
I
SD
SD
= 75A,
GS
di/dt = 100A/µs,
= 24V, TJ = 150°C
V
DD
see Figure 16
= 0
120
500
9
1.3 V
ns
nC
A
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Electrical characteristics STB75NF75L
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
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Page 7
STB75NF75L Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 12. Source-drain diode forward
characteristics
Figure 11. Normalized on resistance vs
temperature
Figure 13. Normalized B
vs temperature
VDSS
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Page 8
Test circuit STB75NF75L
3 Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 15. Gate charge test circuit
Figure 17. Unclamped Inductive load test
circuit
Figure 18. Unclamped inductive waveform
8/13
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STB75NF75L Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data STB75NF75L
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
DIM.
A 4.4 4.6 0.1 73 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.0 48 0.053
D 8.95 9.35 0.3 52 0.368
D1 8 0.315
E 10 10.4 0.3 93
E1 8.5 0.334
G 4.88 5.28 0.192 0. 208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R0.4 0.015
V2 0º 4º
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
3
10/13
1
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STB75NF75L Packaging mechanical data
5 Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11. 4 11 .6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
11/13
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Revision history STB75NF75L
6 Revision history
Table 8. Revision history
Date Revision Changes
21-Jun-2004 1 First release
02-Oct-2006 2 New template, no content change
13-Jul-2007 3 New updates on Tab l e 7
12/13
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STB75NF75L
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