ST MICROELECTRONICS STB75NF75L Datasheet

Page 1
N-channel 75V - 0.009Ω - 75A - D2PA K
Features
Type V
STB75NF75L 75V <0.011 75A
100% avalanche tested
Low threshold drive
DSS
Description
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high­efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
R
DS(on)
I
D
STB75NF75L
STripFET™ II Power MOSFET
3
1
D²PAK
Figure 1. Internal schematic diagram
Applications
Switching applications
Table 1. Device summary
Order code Marking Package Packaging
STB75NF75LT4 B75NF75L D²PAK Tape & reel
July 2007 Rev 3 1/13
www.st.com
13
Page 2
Contents STB75NF75L
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
Page 3
STB75NF75L Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
V
V
I
D
DM
P
DS
GS
I
D
TOT
Drain-source voltage (VGS = 0) 75 V
Gate-source voltage ± 15 V
(1)
Drain current (continuous) at TC = 25°C 75 A
Drain current (continuous) at TC = 100°C 70 A
(2)
Drain current (pulsed) 300 A
Total dissipation at TC = 25°C 300 W
Derating factor 2 W/°C
(3)
dv/dt
E
AS
T
T
stg
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 75A, di/dt ≤ 500A/µs, VDD ≤ V
4. Starting TJ = 25 oC, ID = 37.5A, VDD = 30V
Peak diode recovery voltage slope 10 V/ns
(4)
Single pulse avalanche energy 680 mJ
Operating junction temperature
J
Storage temperature
(BR)DSS
, Tj ≤ T
JMAX
-55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
R
thJC
thJA
T
l
Thermal resistance junction-case Max 0.5 °C/W
Thermal resistance junction-ambient Max 62.5 °C/W
Maximum lead temperature for soldering purpose
300 °C
3/13
Page 4
Electrical characteristics STB75NF75L

2 Electrical characteristics

(T
=25°C unless otherwise specified)
CASE
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown voltage
Zero gate voltage drain current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage
Static drain-source on resistance
= 250µA, VGS= 0
I
D
V
= Max rating,
DS
V
= Max rating @125°C
DS
= ±15V
V
GS
= VGS, ID = 250µA
V
DS
= 10V, ID= 37.5A
V
GS
= 5V, ID= 37.5A
V
GS
75 V
1
10
±100 nA
12.5V
0.009
0.010
0.011
0.013
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Forward transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
= 15V, ID = 37.5A
V
DS
V
=25V, f = 1 MHz,
DS
= 0
V
GS
120 S
4300
660 205
µA µA
pF pF pF
Q
g
Total gate charge
Q
Q
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Gate-source charge
gs
Gate-drain charge
gd
VDD = 60V, ID = 75A
V
see Figure 15
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
4/13
Turn-on delay time
t
Rise time
r
Turn-off delay time Fall time
t
f
V
R
see Figure 14
= 5V
GS
= 40V, ID = 37.5A,
DD
= 4.7Ω, V
G
GS
= 4.5V
75 18 31
35 155 110
60
90 nC
nC nC
ns ns ns ns
Page 5
STB75NF75L Electrical characteristics
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current 75 A
(1)
Source-drain current (pulsed) 300 A
(2)
Forward on voltage
rr
Reverse recovery time Reverse recovery charge
rr
Reverse recovery current
I
= 75A, V
I
SD
SD
= 75A,
GS
di/dt = 100A/µs,
= 24V, TJ = 150°C
V
DD
see Figure 16
= 0
120 500
9
1.3 V
ns
nC
A
5/13
Page 6
Electrical characteristics STB75NF75L

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
6/13
Page 7
STB75NF75L Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 12. Source-drain diode forward
characteristics
Figure 11. Normalized on resistance vs
temperature
Figure 13. Normalized B
vs temperature
VDSS
7/13
Page 8
Test circuit STB75NF75L

3 Test circuit

Figure 14. Switching times test circuit for
resistive load
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 15. Gate charge test circuit
Figure 17. Unclamped Inductive load test
circuit
Figure 18. Unclamped inductive waveform
8/13
Page 9
STB75NF75L Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
9/13
Page 10
Package mechanical data STB75NF75L
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
DIM.
A 4.4 4.6 0.1 73 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.0 48 0.053
D 8.95 9.35 0.3 52 0.368
D1 8 0.315
E 10 10.4 0.3 93
E1 8.5 0.334
G 4.88 5.28 0.192 0. 208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R0.4 0.015
V2
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
3
10/13
1
Page 11
STB75NF75L Packaging mechanical data

5 Packaging mechanical data

D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11. 4 11 .6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
11/13
Page 12
Revision history STB75NF75L

6 Revision history

Table 8. Revision history
Date Revision Changes
21-Jun-2004 1 First release
02-Oct-2006 2 New template, no content change
13-Jul-2007 3 New updates on Tab l e 7
12/13
Page 13
STB75NF75L
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2007 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
13/13
Loading...