N-channel 200V - 0.028Ω - 75A - D2PAK - TO-220 - TO-247
Low gate charge STripFET™ Power MOSFET
General features
Type V
STB75NF20 200V <0.034Ω 75A
STP75NF20 200V <0.034Ω 75A
STW75NF20 200V <0.034Ω 75A
■ Exceptional dv/dt capability
■ Low gate charge
■ 100% Avalanche tested
DSS
Description
R
DS(on)
STB75NF20
STP75NF20 - STW75NF20
I
D
3
1
D²PAK
3
2
1
TO-220
TO-247
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency isolated DC-DC converters
Applications
■ Switching application
Order codes
Part number Marking Package Packaging
STB75NF20 75NF20 D²PAK Tape & reel
STP75NF20 75NF20 TO-220 Tube
STW75NF20 75NF20 TO-247 Tube
Internal schematic diagram
March 2007 Rev 2 1/16
www.st.com
16
Contents STB75NF20 - STP75NF20 - STW75NF20
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
STB75NF20 - STP75NF20 - STW75NF20 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
V
V
DM
I
I
DS
GS
D
D
Drain-source voltage (VGS = 0) 200 V
Gate-source voltage ± 20 V
Drain current (continuous) at TC = 25°C 75 A
Drain current (continuous) at TC = 100°C 47 A
(1)
Drain current (pulsed) 300 A
Derating factor 1.52 W/°C
dv/dt Peak diode recovery voltage slope 15 V/ns
P
TOT
T
Tstg
1. ISD < 75A, di/dt < 400A/µs, VDD < 160
Total dissipation at TC = 25°C 190 W
Operating junction temperature
J
Storage temperture
-50 to 150 °C
Table 2. Thermal resistance
Val ue
Symbol Parameter
TO-220/D²PAK TO-247
Thermal resistance junction-case max 0.66 °C/W
R
thJC
thJ-pcb
R
thJA
T
(1)
Thermal resistance junction-pcb max 34 -- °C/W
Thermal resistance junction-ambient max 62.5 40 °C/W
Maximum lead temperature for soldering
l
purpose
300 °C
R
1. When mounted on inch²FR-4 board (t < 10µs)
Unit
Table 3. Avalanche characteristics
Symbol Parameter Max value Unit
I
AR
E
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
Single pulse avalanche energy
(starting TJ= 25°C, Id= Iar, Vdd=50V)
37 A
205 mJ
3/16
Electrical characteristics STB75NF20 - STP75NF20 - STW75NF20
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
= 1mA, VGS= 0 200 V
I
D
= Max rating,
V
DS
= Max rating @125°C
V
DS
V
= ± 20V ±100 nA
DS
1
10
Gate threshold voltage VDS= VGS, ID = 250µA 2 3 4 V
Static drain-source on
resistance
V
= 10V, ID= 37A 0.028 0.034 Ω
GS
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Q
Q
Q
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
Input capacitance
iss
Output capacitance
oss
Reverse Transfer
rss
Capacitance
g
Total gate charge
Gate-source charge
gs
Gate-drain charge
gd
V
= 15V, ID= 37A
DS
= 25V, f = 1 MHz,
V
DS
=0
V
GS
= 160V, ID=75A,
V
DD
= 10V
V
GS
(see Figure 16)
40 S
3260
640
110
84
18
34
µA
µA
pF
pF
pF
nC
nC
nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
4/16
Turn-on delay time
t
Rise time
r
Turn-off delay time
Fall time
t
f
V
R
(see Figure 15)
= 100V, ID = 37A
DD
= 4.7Ω, VGS= 10V,
G
53
33
75
29
ns
ns
ns
ns
STB75NF20 - STP75NF20 - STW75NF20 Electrical characteristics
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
t
Q
I
RRM
1. Pulse with limited by maximum temperature
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Source-drain current
(1)
Source-drain current (pulsed)
(2)
Forward on voltage
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
= 75A, VGS = 0
I
SD
= 75A,VDD = 100V
I
SD
di/dt = 100 A/µs
= 25°C (see Figure 20)
T
j
= 75A, VDD = 100V
I
SD
di/dt = 100 A/µs
= 150°C (see Figure 20)
T
j
222
2.18
19
267
3
22
75
300AA
1.6 V
ns
µC
A
ns
µC
A
5/16
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