STMicroelectronics STB60NF06, STB60NF06-1 Technical data

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N-channel 60V - 0.014Ω - 60A - D2PAK/I2PA K

General features

Type V

STB60NF06-1 60V <0.016Ω 60A

STB60NF06 60V <0.016Ω 60

■ Exceptional dv/dt capability

■ 100% avalanche tested

■ Application oriented characterization

DSS

Description

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

DS(on)

STB60NF06

STB60NF06-1

STripFET™ II Power MOSFET

D2PAK

I2PAK

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number Marking Package Packaging

STB60NF06T4 B60NF06 D

STB60NF06-1 B60NF06 I

June 2006 Rev 3 1/14

PAK Tape & reel

PA K Tu be

www.st.com

Contents STB60NF06 - STB60NF06-1

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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STB60NF06 - STB60NF06-1 Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

DGR

(1)

tot

Drain-source voltage (VGS = 0) 60 V

Drain-gate voltage (RGS = 20 kΩ)60V

Gate- source voltage ± 20 V

Drain current (continuous) at TC = 25°C 60 A

Drain current (continuous) at TC = 100°C 42 A

Drain current (pulsed) 240 A

Total dissipation at TC = 25°C 110 W

Derating Factor 0.73 W/°C

(2)

dv/dt

stg

1. Pulse width limited by safe operating area.

2. ISD ≤ 60A, di/dt ≤400A/µs, VDD ≤ 24V, Tj ≤ T

Peak diode recovery voltage slope 4 V/ns

Storage temperature

-65 to 175 °C

Max. operating junction temperature

JMAX

Table 2. Thermal data

Rthj-case Thermal resistance junction-case max 1.36 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W

Maximum lead temperature for soldering purpose 300 °C

Table 3. Avalanche characteristics

Symbol Parameter Max Value Unit

Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T

max)

Single Pulse Avalanche Energy

(starting T

= 25 °C, ID = IAR, VDD = 30 V)

30 A

360 mJ

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Electrical characteristics STB60NF06 - STB60NF06-1

2 Electrical characteristics

=25°C unless otherwise specified)

CASE

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

(BR)DSS

DSS

GSS

GS(th)

DS(on)

Drain-source breakdown voltage

Zero gate voltage drain current (V

Gate-body leakage current (V

= 0)

ID = 250µA, VGS =0 60 V

= Max rating

VDS = Max rating,

= 125°C

VGS = ± 20V ±100 nA

Gate threshold voltage VDS = VGS, ID = 250µA 2 4 V

Static drain-source on resistance

= 10V, ID = 30A 0.015 0.016 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Forward

(1)

d(on)

d(off)

Q Q Q

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

transconductance

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

= 15V, ID= 30A 20 S

= 25V, f = 1MHz,

= 0

= 30V, ID = 30A

RG=4.7Ω VGS = 10V (see Figure 12)

VDD = 48V, ID = 60A, VGS = 10V, RG=4.7Ω (see Figure 13)

1810

360 125

108

43 20

49 18 14

66 nC

µA µA

pF pF pF

ns ns ns ns

nC nC

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STB60NF06 - STB60NF06-1 Electrical characteristics

Table 6. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

SDM

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Source-drain current Source-drain current

(1)

(pulsed)

(2)

Forward on voltage ISD = 60A, VGS = 0 1.3 V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 60A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C (see Figure 14)

182

240

A A

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Electrical characteristics STB60NF06 - STB60NF06-1

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

Figure 3. Output characterisics Figure 4. Transfer characteristics

Figure 5. Transconductance Figure 6. Static drain-source on resistance

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STB60NF06 - STB60NF06-1 Electrical characteristics

Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage

vs temperature

Figure 11. Source-drain diode forward

characteristics

Figure 10. Normalized on resistance vs

temperature

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Test circuit STB60NF06 - STB60NF06-1

3 Test circuit

Figure 12. Switching times test circuit for

resistive load

Figure 14. Test circuit for inductive load

switching and diode recovery times

Figure 13. Gate charge test circuit

Figure 15. Unclamped Inductive load test

circuit

Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform

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STB60NF06 - STB60NF06-1 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

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Package mechanical data STB60NF06 - STB60NF06-1

D2PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0. 368

D1 8 0.315

E 10 10.4 0.393

E1 8.5 0.334

G 4.88 5.28 0.1 92 0.208

L 15 15.85 0.590 0. 625

L2 1 .27 1.4 0.050 0.055

L3 1 .4 1.7 5 0.055 0.068

M 2.4 3.2 0.094 0.126

R0.4 0.015

V2 0º 4º

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STB60NF06 - STB60NF06-1 Package mechanical data

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181

A1 2. 40 2.72 0.094 0.107

b 0.61 0.88 0.024 0.034

b1 1.14 1. 70 0.04 4 0.066

c 0.49 0.70 0.019 0.027

c2 1.23 1.32 0.048 0.052

D 8.95 9.35 0.352 0.368

e 2.40 2.70 0.094 0.106

e1 4.95 5. 15 0.19 4 0.202

E 10 10 .40 0.393 0.410

L 13 14 0.51 1 0.551

L1 3.50 3. 93 0.13 7 0.154

L2 1.27 1. 40 0.05 0 0.055

TO-262 (I2PAK) MECHANICAL DATA

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Packing mechanical data STB60NF06 - STB60NF06-1

5 Packing mechanical data

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0795

G 24.4 26.4 0.960 1.039

N 100 3.937

T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421

B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456

K0 4.8 5.0 0.189 0.197

P0 3.9 4.1 0.153 0.161

P1 11.9 12.1 0.468 0.476

P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

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STB60NF06 - STB60NF06-1 Revision history

6 Revision history

Table 7. Revision history

Date Revision Changes

21-Jun-2004 2 Preliminary version

16-Jun-2006 3 New template, no content change.

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STB60NF06 - STB60NF06-1

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STMicroelectronics STB60NF06, STB60NF06-1 Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual

1 Electrical ratings

Table 1. Absolute maximum ratings

Table 2. Thermal data

Table 3. Avalanche characteristics

2 Electrical characteristics

Table 4. On/off states

Table 5. Dynamic

Table 6. Source drain diode

2.1 Electrical characteristics (curves)

3 Test circuit

Figure 13. Gate charge test circuit

Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform

4 Package mechanical data

5 Packing mechanical data

6 Revision history

Table 7. Revision history