STMicroelectronics STB60NF06, STB60NF06-1 Technical data
N-channel 60V - 0.014Ω - 60A - D2PAK/I2PA K
General features
Type V
STB60NF06-1 60V <0.016Ω 60A
STB60NF06 60V <0.016Ω 60
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
DSS
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
R
DS(on)
I
D
STB60NF06
STB60NF06-1
STripFET™ II Power MOSFET
3
1
D2PAK
I2PAK
Internal schematic diagram
2
1
3
Applications
■ Switching application
Order codes
Part number Marking Package Packaging
2
STB60NF06T4 B60NF06 D
STB60NF06-1 B60NF06 I
June 2006 Rev 3 1/14
PAK Tape & reel
2
PA K Tu be
www.st.com
14
Contents STB60NF06 - STB60NF06-1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STB60NF06 - STB60NF06-1 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
I
V
DGR
V
DM
P
I
I
DS
GS
D
D
(1)
tot
Drain-source voltage (VGS = 0) 60 V
Drain-gate voltage (RGS = 20 kΩ)60V
Gate- source voltage ± 20 V
Drain current (continuous) at TC = 25°C 60 A
Drain current (continuous) at TC = 100°C 42 A
Drain current (pulsed) 240 A
Total dissipation at TC = 25°C 110 W
Derating Factor 0.73 W/°C
(2)
dv/dt
T
stg
T
j
1. Pulse width limited by safe operating area.
2. ISD ≤ 60A, di/dt ≤400A/µs, VDD ≤ 24V, Tj ≤ T
Peak diode recovery voltage slope 4 V/ns
Storage temperature
-65 to 175 °C
Max. operating junction temperature
JMAX
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max 1.36 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
T
J
Maximum lead temperature for soldering purpose 300 °C
Table 3. Avalanche characteristics
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
AS
(starting T
= 25 °C, ID = IAR, VDD = 30 V)
j
30 A
360 mJ
3/14
Electrical characteristics STB60NF06 - STB60NF06-1
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
Gate-body leakage
current (V
DS
= 0)
= 0)
ID = 250µA, VGS =0 60 V
V
= Max rating
DS
VDS = Max rating,
= 125°C
T
C
1
10
VGS = ± 20V ±100 nA
Gate threshold voltage VDS = VGS, ID = 250µA 2 4 V
Static drain-source on
resistance
V
= 10V, ID = 30A 0.015 0.016 Ω
GS
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Forward
(1)
g
fs
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Turn-on delay time
t
Rise time
r
Turn-off delay time
t
Fall time
f
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
= 15V, ID= 30A 20 S
V
DS
= 25V, f = 1MHz,
V
DS
= 0
V
GS
= 30V, ID = 30A
V
DD
RG=4.7Ω VGS = 10V
(see Figure 12)
VDD = 48V, ID = 60A,
VGS = 10V, RG=4.7Ω
(see Figure 13)
1810
360
125
16
108
43
20
49
18
14
66 nC
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
4/14
STB60NF06 - STB60NF06-1 Electrical characteristics
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Source-drain current
Source-drain current
(1)
(pulsed)
(2)
Forward on voltage ISD = 60A, VGS = 0 1.3 V
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 60A, di/dt = 100A/µs,
VDD = 25V, Tj = 150°C
(see Figure 14)
73
182
5
60
240
A
A
ns
nC
A
5/14
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