STB55NF06L - STB55NF06L-1
N-channel 60V - 0.014Ω - 55A TO-220/D2PAK/I2PA K
General features
Typ e V
STP55NF06L 60V <0.018Ω 55A
STB55NF06L 60V <0.018Ω 55A
STB55NF06L-1 60V <0.018Ω 55A
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
DSS
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
R
DS(on)
I
D
STP55NF06L
STripFET™ II Power MOSFET
3
1
D2PAK
3
2
1
TO-220
Internal schematic diagram
1
I2PAK
3
2
Applications
■ Switching application
Order codes
Part number Marking Package Packaging
STP55NF06L P55NF06L TO-220 Tube
2
STB55NF06LT4 B55NF06L D
STB55NF06L-1 B55NF06L I
November 2006 Rev 4 1/15
PAK Tape & reel
2
PA K Tu be
www.st.com
15
Contents STB55NF06L - STB55NF06L-1 - STP55NF06L
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
STB55NF06L - STB55NF06L-1 - STP55NF06L Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
V
V
DM
P
DS
GS
I
D
I
D
TOT
Drain-source voltage (VGS = 0) 60 V
Gate-source voltage ± 16 V
Drain current (continuous) at TC = 25°C 55 A
Drain current (continuous) at TC = 100°C 39 A
(1)
Drain current (pulsed) 220 A
Total dissipation at TC = 25°C 95 W
Derating factor 0.63 W/°C
(2)
dv/dt
E
AS
T
T
stg
1. Pulse width limited by safe operating area
2. ISD ≤ 55A, di/dt ≤ 200A/µs, V
3. Starting Tj = 25 oC, ID = 27.5A, VDD= 30V
Peak diode recovery voltage slope 20 V/ns
(3)
Single pulse avalanche energy 300 mJ
Operating junction temperature
J
Storage temperature
≤ V
DD
(BR)DSS
Table 2. Thermal data
R
thj-case
R
thj-a
T
Thermal resistance junction-case max 1.58 °C/W
Thermal resistance junction-ambient max 62.5 °C/W
Maximum lead temperature for soldering
l
purpose
, Tj ≤ T
.
JMAX
-55 to 175 °C
.
300 °C
3/15
Electrical characteristics STB55NF06L - STB55NF06L-1 - STP55NF06L
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage
Static drain-source on
resistance
= 250µA, VGS= 0
I
D
V
= Max rating,
DS
V
= Max rating @125°C
DS
= ±16V
V
GS
= VGS, ID = 250µA
V
DS
= 5V, ID= 27.5A
V
GS
= 10V, ID= 27.5A
V
GS
60 V
1
10
±100 nA
11.7 V
0.016
0.014
0.020
0.018ΩΩ
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Forward transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
=15V, ID = 27.5A
V
DS
V
=25V, f=1 MHz,
DS
=0
V
GS
30 S
1700
300
105
µA
µA
pF
pF
pF
Q
g
Total gate charge
Q
Q
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Gate-source charge
gs
Gate-drain charge
gd
VDD=48V, ID = 55A
V
4/15
GS
=4.5V
27
10
7
37 nC
nC
nC
STB55NF06L - STB55NF06L-1 - STP55NF06L Electrical characteristics
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
=30 V, ID=27.5A,
V
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off delay time
t
Fall time
f
DD
=4.7Ω, VGS= 4.5V
R
G
(see Figure 12)
V
=30V, ID=27.5A,
DD
=4.7Ω, VGS=4.5V
R
G
(see Figure 12)
20
100
40
20
ns
ns
ns
ns
Table 6. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
I
SDM
V
SD
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current 12 A
SD
(1)
Source-drain current (pulsed) 48 A
(2)
Forward on voltage
t
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
= 55A, VGS=0
I
SD
= 55A,
I
SD
di/dt = 100A/µs,
= 30V, Tj = 150°C
V
DD
(see Figure 14)
80
200
5
1.6 V
ns
nC
A
5/15
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