1
3
TAB
2
3
DPAK
TAB
1
D2PAK
2
AM01475v1_noZen
D(2, TAB)
G(1)
S(3)
STB18NF25, STD18NF25
Datasheet
Automotive-grade N-channel 250 V, 0.140 Ω typ., 17 A STripFET™ II
Power MOSFETs in D2PAK and DPAK packages
Features
Product status
STB18NF25
STD18NF25
Order codes
STB18NF25
STD18NF25
V
DS
250 V 0.165 Ω 17 A 110 W
R
max. I
DS(on)
D
P
TOT
• AEC-Q101 qualified
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
Applications
• Switching applications
Description
These Power MOSFETs have been developed using STMicroelectronics’ unique
STripFET process, which is specifically designed to minimize input capacitance and
gate charge. This renders the devices suitable for use as primary switch in advanced
high-efficiency isolated DC-DC converters for telecom and computer applications,
and applications with low gate charge driving requirements.
DS6601 - Rev 5 - May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Symbol Parameter Value Unit
V
DS
V
GS
I
D
I
D
(1)
IDM
P
TOT
(2)
dv/dt
T
j
T
stg
1. Pulse width limited by safe operating area.
2. ISD ≤ 17 A, di/dt ≤ 200 A/μs, V
Drain-source voltage 250 V
Gate-source voltage ±20 V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed) 68 A
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope 10 V/ns
Operating junction temperature range
Storage temperature range
DSpeak
Table 1. Absolute maximum ratings
≤ V
(BR)DSS
, VDD = 80% V
(BR)DSS
.
STB18NF25, STD18NF25
Electrical ratings
17 A
12 A
110 W
-55 to 175 °C
Table 2. Thermal data
Symbol
R
thj-case
(1)
R
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
thj-pcb
Thermal resistance junction-case 1.36 °C/W
Thermal resistance junction-pcb 30 50 °C/W
Parameter
Table 3. Avalanche characteristics
Symbol
I
AR
E
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Parameter Value Unit
)
jmax
D2PAK
Value
Unit
DPAK
17 A
170 mJ
DS6601 - Rev 5
page 2/22
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
1. Defined by design, not subject to production test.
Drain-source breakdown voltage
Zero gate voltage drain current
Gate body leakage current
Gate threshold voltage
Static drain-source on resistance
Table 4. On/off states
ID = 1 mA, VGS = 0 V
VGS = 0 V, VDS = 250 V
VGS = 0 V, VDS = 250 V,
TC = 125 °C
VDS = 0 V, VGS = ±20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 8.5 A
(1)
STB18NF25, STD18NF25
Electrical characteristics
250 V
1 µA
10 µA
±100 nA
2 3 4 V
0.140 0.165 Ω
1. C
2. C
Table 5. Dynamic
Symbol
C
iss
C
oss
C
rss
C
o(tr)
C
o(er)
R
g
Q
g
Q
gs
Q
gd
is a constant capacitance value that gives the same charging time as C
o(tr)
is a constant capacitance value that gives the same stored energy as C
o(er)
Input capacitance
Output capacitance 178
Reverse transfer capacitance 28
(1)
Equivalent capacitance time related
Equivalent capacitance
(2)
energy related
Gate input resistance
Total gate charge
Gate-source charge 4.5
Gate-drain charge 14.4
Parameter Test conditions Min. Typ. Max. Unit
VDS = 25 V, f = 1 MHz,
VGS = 0 V
VDS = 0 to 200 V, VGS = 0 V
f = 1 MHz, ID=0 A
VDD = 200 V, ID = 17 A,
VGS = 0 to 10 V
(see Figure 16. Test circuit for
gate charge behavior)
Table 6. Switching times
Symbol
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time 16.5
Turn-off delay time 31.5
Fall time 9.8
Parameter Test conditions Min. Typ. Max. Unit
VDD = 125 V, ID = 8.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15. Test circuit for
resistive load switching times
and Figure 20. Switching time
waveform)
1000
-
- 106 -
79 -
- 2 - Ω
29.3 -
-
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
10.2
-
- pF
pF
nC
-
.
DSS
DSS.
- ns
DS6601 - Rev 5
page 3/22
STB18NF25, STD18NF25
Electrical characteristics
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
Source-drain current
(1)
Source-drain current (pulsed) 68
(2)
Forward on voltage
Reverse recovery time
Reverse recovery charge 0.8 μC
ISD = 17 A, VGS = 0 V
ISD = 17 A, di/dt = 100 A/µs
VDD = 60 V
(see Figure 17. Test circuit for
Reverse recovery current 10.6 A
inductive load switching and
-
- 1.5 V
147 ns
-
diode recovery times)
Reverse recovery time
Reverse recovery charge 1.1 μC
Reverse recovery current 12 A
ISD = 17 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 17. Test circuit for
inductive load switching and
180 ns
-
diode recovery times)
17
A
DS6601 - Rev 5
page 4/22
2.1 Electrical characteristics curves
ID
10
1
0.1
0.1
1
100
VDS(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=175°C
Tc=25°C
Sinlge
pulse
AM05549v1
ID
10
1
0.1
0.1
1
100
VDS(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=175°C,
Tc=25°C
Single pulse
100
AM05561v1
GC20460
10
0
10
-1
10
-2
10-510-410-310
-2
10
-1
K
tp (s)
ID
25
20
5
0
0
10
VDS(V)
20
(A)
35
40
5V
6V
7V
VGS=10V
10
15
30
45
AM05550v1
ID
20
10
0
0
4
VGS(V)
8
(A)
2
6
30
VDS=10V
AM05551v1
STB18NF25, STD18NF25
Electrical characteristics curves
Figure 1. Safe operating area for D2PAK
Figure 3. Safe operating area for DPAK
Figure 2. Thermal impedance for D2PAK
Figure 4. Thermal impedance for DPAK
DS6601 - Rev 5
Figure 5. Output characterisics
Figure 6. Transfer characteristics
page 5/22
VGS
6
4
2
0
0
Qg(nC)
(V)
20
8
10
10
VDD=200V
ID=17A
12
150
100
50
0
200
VDS
VDS
30
(V)
AM05552v1
Eoss
1.5
1.0
0.5
0
0
50
VDS(V)
(µJ)
200
2.0
100
150
2.5
3.0
3.5
4.0
AM05554v1
C
1000
100
10
0.1
10
VDS(V)
(pF)
1
100
Ciss
Coss
Crss
AM05555v1
VGS(th)
0.60
0.50
0.40
0.30
-100
TJ(°C)
(norm)
-50
0.70
50
100
150
0.90
0.80
1.00
1.10
0
AM05556v1
RDS(on)
2.0
1.5
1.0
0.5
-50
0
TJ(°C)
(norm)
50
100
2.5
150
-100
AM05557v1
STB18NF25, STD18NF25
Electrical characteristics curves
Figure 7. Gate charge vs gate-source voltage
Figure 9. Output capacitance stored energy
Figure 8. Static drain-source on resistance
Figure 10. Capacitance variations
DS6601 - Rev 5
Figure 11. Normalized gate threshold voltage vs
temperature
Figure 12. Normalized on-resistance vs temperature
page 6/22
VSD
0
10
ISD(A)
(V)
5
15
20
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ=-50°C
TJ=175°C
TJ=25°C
AM05558v1
V(BR)DSS
-100
TJ(°C)
(norm)
-50
50
0
0.90
0.95
1.00
1.05
1.10
1.15
100
150
AM05559v1
STB18NF25, STD18NF25
Electrical characteristics curves
Figure 13. Source-drain diode forward characteristics
Figure 14. Normalized V
vs temperature
(BR)DSS
DS6601 - Rev 5
page 7/22
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