STMicroelectronics STP16NK60Z, STB16NK60Z-S, STW16NK60Z Technical data

STP16NK60Z - STB16NK60Z-S STW16NK60Z

N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH™ MOSFET

TYPE	VDSS	RDS(on)	ID	Pw
STP16NK60Z	600 V	< 0.42 Ω	14 A	190 W
STB16NK60Z-S	600 V	< 0.42 Ω	14 A	190 W
STW16NK60Z	600 V	< 0.42 Ω	14 A	190 W

■TYPICAL RDS(on) = 0.38 Ω

■EXTREMELY HIGH dv/dt CAPABILITY

■100% AVALANCHE TESTED

■GATE CHARGE MINIMIZED

■VERY LOW INTRINSIC CAPACITANCES

■VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION

	1	2 3
	3
	2
	1
TO-220	I2SPAK
	3
	2
	1
	TO-247

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-

based PowerMESH™ layout. In addition to pushing INTERNAL SCHEMATIC DIAGRAM on-resistance significantly down, special care is tak-

en to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■IDEAL FOR OFF-LINE POWER SUPPLIES

ORDER CODE

PART NUMBER	MARKING	PACKAGE	PACKAGING
STP16NK60Z	P16NK60Z	TO-220	TUBE
STB16NK60Z-S	B16NK60Z	I2SPAK	TUBE
STW16NK60Z	W16NK60Z	TO-247	TUBE

March 2004

1/11

STP16NK60Z - STB16NK60Z-S - STW16NK60Z

ABSOLUTE MAXIMUM RATINGS

	Symbol	Parameter	Value	Unit
	VDS	Drain-source Voltage (VGS = 0)	600	V
	VDGR	Drain-gate Voltage (RGS = 20 kΩ )	600	V
	VGS	Gatesource Voltage	± 30	V
	ID	Drain Current (continuous) at TC = 25°C	14	A
	ID	Drain Current (continuous) at TC = 100°C	8.8	A
	IDM ( )	Drain Current (pulsed)	56	A
	PTOT	Total Dissipation at TC = 25°C	190	W
		Derating Factor	1.51	W/°C
	VESD(G-S)	Gate source ESD (HBM-C= 100pF, R= 1.5KΩ)	6000	V
	dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
	Tj	Operating Junction Temperature	-55 to 150	°C
	Tstg	Storage Temperature

( ) Pulse width limited by safe operating area

(1) ISD ≤ 14 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

THERMAL DATA

		TO-220/ I²SPAK		TO-247
Rthj-case	Thermal Resistance Junction-case Max	0.66			°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max	62.5		50	°C/W
Tl	Maximum Lead Temperature For Soldering Purpose	300			°C

AVALANCHE CHARACTERISTICS

Symbol	Parameter	Max Value	Unit
IAR	Avalanche Current, Repetitive or Not-Repetitive	14	A
	(pulse width limited by Tj max)
EAS	Single Pulse Avalanche Energy	360	mJ
	(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

GATE-SOURCE ZENER DIODE

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
BVGSO	Gate-Source Breakdown	Igs=± 1mA (Open Drain)	30			V
	Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.

2/11

STP16NK60Z - STB16NK60Z-S - STW16NK60Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 1 mA, VGS = 0	600			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating, TC = 125 °C			50	µA
IGSS	Gate-body Leakage	VGS = ± 20V			±10	µA
	Current (VDS = 0)
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 100 µA	3	3.75	4.5	V
RDS(on)	Static Drain-source On	VGS = 10V, ID = 7 A		0.38	0.42	Ω
	Resistance

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS = 15 V, ID = 7 A		12		S
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0		2650		pF
Coss	Output Capacitance			285		pF
Crss	Reverse Transfer			62		pF
	Capacitance
Coss eq. (3)	Equivalent Output	VGS = 0V, VDS = 0V to 480V		158		pF
	Capacitance
td(on)	Turn-on Delay Time	VDD = 480 V, ID = 14 A		30		ns
tr	Rise Time	RG = 4.7Ω VGS = 10 V		25		ns
td(off)	Turn-off Delay Time	(Resistive Load see, Figure 3)		70		ns
tf	Fall Time			15		ns
Qg	Total Gate Charge	VDD = 480V, ID = 14 A,		86		nC
Qgs	Gate-Source Charge	VGS = 10V		17		nC
Qgd	Gate-Drain Charge			46		nC

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ISD	Source-drain Current					14	A
ISDM (2)	Source-drain Current (pulsed)					56	A
VSD (1)	Forward On Voltage	ISD = 14	A, VGS = 0			1.6	V
trr	Reverse Recovery Time	ISD = 14	A, di/dt = 100 A/µs		490		ns
Qrr	Reverse Recovery Charge	VDD = 100 V, Tj = 25°C			5.4		µC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)			22		A
trr	Reverse Recovery Time	ISD = 14	A, di/dt = 100 A/µs		585		ns
Qrr	Reverse Recovery Charge	VDD = 100 V, Tj = 150°C			7		µC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)			24		A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2.Pulse width limited by safe operating area.

3.Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.

3/11

STP16NK60Z - STB16NK60Z-S - STW16NK60Z

Safe Operating Area for TO-220/I²SPAK

Thermal Impedance for TO-220/I²SPAK

Safe Operating Area for TO-247

Thermal Impedance for TO-247

Output Characteristics

Transfer Characteristics

4/11