STB140NF55 - STB140NF55-1
N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220
General features
Type V
STB140NF55 55V <0.008Ω 80A
STB140NF55-1 55V <0.008Ω 80A
STP140NF55 55V <0.008Ω 80A
1. Current limited by package
DSS
R
DS(on)
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
(1)
I
D
STP140NF55
STripFET™ II Power MOSFET
3
2
1
TO-220
D²PAK
Internal schematic diagram
3
1
1
I²PAK
3
2
Applications
■ Motor control
■ High current, switching application
Order codes
Part number Marking Package Packaging
STB140NF55 B140NF55 D²PAK Tape & reel
STB140NF55-1 B140NF55 I²PAK Tube
STP140NF55 P140NF55 TO-220 Tube
March 2007 Rev 4 1/15
www.st.com
Contents STB140NF55 - STB140NF55-1 - STP140NF55
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
STB140NF55 - STB140NF55-1 - STP140NF55 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
V
V
I
D
I
D
DM
P
DS
GS
TOT
Drain-source voltage (VGS = 0) 55 V
Gate- source voltage ±20 V
(1)
Drain current (continuous) at TC = 25°C 80 A
(1)
Drain current (continuous) at TC = 100°C 80 A
(2)
Drain current (pulsed) 320 A
Total dissipation at TC = 25°C 300 W
Derating factor 2 W/°C
(3)
dv/dt
E
AS
T
stg
T
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD < 80A, di/dt < 300A/µs, VDD=80%V
4. Starting Tj = 25°C, ID = 40A, VDD = 30V
Peak diode recovery voltage slope 10 V/ns
(4)
Single pulse avalance energy 1.3 J
Storage temperature
Operating junction temperature
j
(BR)DSS
Table 2. Thermal data
Symbol Parameter
–55 to 175 °C
Value
Unit
TO-220 - I²PAK D²PAK
Rthj-case Thermal resistance junction-case max 0.5 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5
Rthj-pcb
1. When mounted on 1 inch², FR4 board, 2 oz Cu
(1)
Thermal resistance junction-pcb max -- 35 °C/W
T
Maximum lead temperature for soldering
l
purpose (for 10 sec, 1.6mm from case)
300 °C
--
°C/W
3/15
Electrical characteristics STB140NF55 - STB140NF55-1 - STP140NF55
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
breakdown voltage
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
ID = 250 µA, VGS = 0 55 V
VDS = Max rating
110µA
VDS = Max rating, TC = 125 °C
VGS = ±20V ±100 nA
Gate threshold voltage VDS = VGS, ID = 250µA 2 3 4 V
Static drain-source on
resistance
= 10 V, ID = 40 A 0.0065 0.008 Ω
V
GS
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Q
Q
Q
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance VDS = 15V, ID= 40 A 100 S
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
= 25V, f = 1 MHz
V
DS
= 0
V
GS
= 44V, ID= 80A
V
DD
=10V
V
GS
(see Figure 14)
5300
1000
290
142
27
55
µA
pF
pF
pF
nC
nC
nC
4/15
STB140NF55 - STB140NF55-1 - STP140NF55 Electrical characteristics
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
t
d(off)
t
Turn-on delay time
Rise time
r
Turn-off-delay time
Fall time
f
VDD = 27.5 V, ID = 40A
=4.7Ω , VGS = 10V
R
G
(see Figure 13)
VDD = 27.5V, ID = 40A,
RG=4.7Ω, V
GS
= 10V
(see Figure 13)
30
150
125
45
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD
t
Q
I
RRM
1. Pulse width limited safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Source-drain current
(1)
Source-drain current (pulsed)
(2)
Forward on voltage ISD = 80A, VGS = 0 1.5 V
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
= 80A, di/dt = 100 A/µs,
I
SD
VDD = 20V, Tj = 150°C
(see Figure 15)
275
6.5
80
320AA
90
ns
ns
ns
ns
ns
nC
A
5/15
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