1
3
TAB
2
3
DPAK
TAB
1
D2PAK
2
D(2, TAB)
G(1)
S(3)
NG1D2TS3Z
STB13N60M2, STD13N60M2
Datasheet
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh™ M2 Power MOSFETs in D²PAK
and DPAK packages
Features
Product status link
STB13N60M2
STD13N60M2
Order code
STB13N60M2
STD13N60M2 DPAK
VDS@T
JMAX.
650 V 0.38 Ω 11 A
R
max. I
DS(on)
D
Package
D²PAK
• Extremely low gate charge
• Excellent output capacitance (C
OSS
) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2
technology. Thanks to their strip layout and improved vertical structure, these devices
exhibit low on-resistance and optimized switching characteristics, rendering them
suitable for the most demanding high-efficiency converters.
Product summary
Order code STB13N60M2
Marking 13N60M2
Package D²PAK
Packing Tape and reel
Order code STD13N60M2
Marking 13N60M2
Package DPAK
Packing Tape and reel
DS9632 - Rev 5 - February 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Symbol Parameter Value Unit
V
GS
I
D
I
D
(1)
IDM
P
TOT
dv/dt
dv/dt
T
stg
T
j
1. Pulse width limited by safe operating area.
2. ISD ≤ 11 A, di/dt ≤ 400 A/µs; V
3. VDS ≤ 480 V.
Gate-source voltage ± 25 V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed) 44 A
Total power dissipation at TC = 25 °C
(2)
Peak diode recovery voltage slope 15
(3)
MOSFET dv/dt ruggedness 50
Storage temperature range
Operating junction temperature range
DS peak
Table 1. Absolute maximum ratings
< V
(BR)DSS
, VDD = 400 V
STB13N60M2, STD13N60M2
Electrical ratings
11 A
7 A
110 W
V/ns
- 55 to 150 °C
Table 2. Thermal data
Symbol
R
thj-case
R
thj-pcb
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
Parameter
Thermal resistance junction-case 1.14
(1)
Thermal resistance junction-pcb 30 50
Table 3. Avalanche characteristics
Symbol
I
E
Parameter Value Unit
Avalanche current, repetetive or not repetetive (pulse width limited by T
AR
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V)
AS
Value
D²PAK DPAK
)
jmax.
Unit
°C/W
2.8 A
125 mJ
DS9632 - Rev 5
page 2/23
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
1. Defined by design, not subject to production test.
Drain-source breakdown
voltage
Zero-gate voltage drain
current
Gate-body leakage current
Gate threshold voltage
Static drain-source onresistance
STB13N60M2, STD13N60M2
Table 4. On/off-states
VGS = 0 V, ID = 1 mA
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V, TC = 125 °C
VDS = 0 V, VGS = ±25 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.5 A
Electrical characteristics
600 V
(1)
2 3 4 V
0.35 0.38 Ω
1 µA
100 µA
±10 µA
C
1. C
Symbol
Table 5. Dynamic
Symbol
C
iss
C
oss
C
rss
oss eq.
R
G
Q
g
Q
gs
Q
gd
oss eq.
to 80% V
Parameter Test conditions Min. Typ. Max. Unit
Input capacitance
Output capacitance - 32 - pF
VDS= 100 V, f = 1 MHz, VGS = 0 V
Reverse transfer capacitance - 1.1 - pF
(1)
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge - 2.5 - nC
Gate-drain charge - 9 - nC
VDS = 0 to 480 V, VGS = 0 V
f = 1 MHz, ID = 0 A
VDD = 480 V, ID = 11 A, VGS = 0 to 10 V
(see Figure 16. Test circuit for gate
charge behavior)
is defined as a constant equivalent capacitance giving the same charging time as C
DSS.
Table 6. Switching times
Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
t
t
Turn-on delay time
Rise time - 10 - ns
r
Turn-off-delay time - 41 - ns
Fall time - 9.5 - ns
f
VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω,
VGS = 10 V (see Figure 15. Test circuit for
resistive load switching times and
Figure 20. Switching time waveform)
- 580 - pF
- 120 - pF
- 6.6 - Ω
- 17 - nC
when VDS increases from 0
oss
- 11 - ns
DS9632 - Rev 5
page 3/23
STB13N60M2, STD13N60M2
Electrical characteristics
Table 7. Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
t
Q
I
RRM
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Source-drain current - 11 A
(1)
Source-drain current (pulsed) - 44 A
(2)
Forward on voltage
Reverse recovery time
rr
Reverse recovery charge - 2.8 µC
rr
Reverse recovery current - 18.5 A
Reverse recovery time
rr
Reverse recovery charge - 3.8 µC
rr
Reverse recovery current - 19 A
VGS = 0 V, ISD = 11 A
ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 17. Test circuit for inductive
load switching and diode recovery times)
ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 17. Test circuit for
inductive load switching and diode
recovery times)
- 1.6 V
- 297 ns
- 394 ns
DS9632 - Rev 5
page 4/23
2.1 Electrical characteristics (curves)
ID
10
1
0.1
1
100
VDS(V)
10
(A)
Operation in this area is
Limited by max. RDS(on)
10 ms
1 ms
0.1
Tj=150 °C
Tc=25 °C
Single pulse
100 µs
10 µs
AM15710v1
ID
10
1
0.1
1
100
VDS(V)
10
(A)
Operation in this area is
Limited by max. RDS(on)
10 ms
1 ms
0.1
Tj=150 °C
Tc=25 °C
Single pulse
100 µs
10 µs
AM15711v1
GC20460
10
0
10
-1
10
-2
10-510-410-310-210
-1
K
tp (s)
ID
12
8
4
0
0
8
VDS(V)
(A)
4
12
16
4V
5V
6V
VGS=7, 8, 9, 10V
16
20
AM15712v1
ID
4
0
0
4
VGS(V)
8
(A)
2
6
8
12
VDS=18 V
16
20
AM15713v1
STB13N60M2, STD13N60M2
Electrical characteristics (curves)
Figure 1. Safe operating area for D2PAK
Figure 3. Safe operating area for DPAK
Figure 2. Thermal impedance for D2PAK
Figure 4. Thermal impedance for DPAK
Figure 5. Output characteristics
DS9632 - Rev 5
Figure 6. Transfer characteristics
page 5/23
V(BR)DSS
-50
TJ(°C)
(norm)
0
0.9
0.94
0.98
1.02
1.06
ID=1 mA
50
100
1.1
AM15714v1
R DS(on)
0.360
0.350
0.340
0.330
0
4
ID(A)
(Ω)
2
6
0.370
8
10
VGS=10 V
AM15715v1
VGS
6
4
2
0
0
Qg(nC)
(V)
8
8
4
10
VDD = 480 V
300
200
100
0
400
VDS
12
16
500
VDS
(V)
ID=11 A
AM15716v1
C
10
1
0.1
0.1
10
VDS(V)
(pF)
1
100
Ciss
Coss
Crss
100
1000
AM15717v1
VGS(th)
0.9
0.8
0.7
0.6
TJ(°C)
(norm)
-50
1.0
ID=250µA
0
50
100
1.1
AM15718v1
VGS = 10 V
ID = 5.5 A
RDS(on)
2.1
1.7
1.3
0.9
TJ(°C)
(norm)
0.5
-50
0
50
100
AM15719v1
STB13N60M2, STD13N60M2
Electrical characteristics (curves)
Figure 7. Normalized V
vs. temperature
(BR)DSS
Figure 9. Gate charge vs. gate-source voltage
Figure 8. Static drain-source on-resistance
Figure 10. Capacitance variations
DS9632 - Rev 5
Figure 11. Normalized gate threshold voltage vs.
temperature
Figure 12. Normalized on-resistance vs. temperature
page 6/23
VSD
0
4
ISD (A)
(V)
2
10
6
8
0.5
0.6
0.7
0.8
TJ =-50 °C
TJ=150 °C
TJ=25 °C
0.9
1
AM15720v1
Eoss
0
VDS(V)
(µJ)
200
100
500
0
1
2
3
4
300
400
AM15721v1
STB13N60M2, STD13N60M2
Electrical characteristics (curves)
Figure 13. Source-drain diode forward characteristics
Figure 14. Output capacitance stored energy
DS9632 - Rev 5
page 7/23
3 Test circuits
AM01468v1
V
D
R
G
R
L
D.U.T.
2200
μF
V
DD
3.3
μF
+
pulse width
V
GS
AM01469v1
47 kΩ
1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST
100 Ω
100 nF
D.U.T.
+
pulse width
V
GS
2200
μF
V
G
V
DD
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
A
A
B
B
R
G
G
D
S
100 µH
µF
3.3
1000
µF
V
DD
D.U.T.
+
_
+
fast
diode
AM01471v1
V
D
I
D
D.U.T.
L
V
DD
+
pulse width
V
i
3.3
µF
2200
µF
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
0
V
GS
90%
V
DS
90%
10%
90%
10%
10%
t
on
t
d(on)
t
r
0
t
off
t
d(off)
t
f
STB13N60M2, STD13N60M2
Test circuits
Figure 15. Test circuit for resistive load switching times
Figure 17. Test circuit for inductive load switching and
diode recovery times
Figure 16. Test circuit for gate charge behavior
Figure 18. Unclamped inductive load test circuit
DS9632 - Rev 5
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
page 8/23
4 Package information
STB13N60M2, STD13N60M2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
®
DS9632 - Rev 5
page 9/23
4.1 D²PAK (TO-263) type A package information
0079457_25
Figure 21. D²PAK (TO-263) type A package outline
STB13N60M2, STD13N60M2
D²PAK (TO-263) type A package information
DS9632 - Rev 5
page 10/23
STB13N60M2, STD13N60M2
D²PAK (TO-263) type A package information
Table 8. D²PAK (TO-263) type A package mechanical data
Dim.
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10.00 10.40
E1 8.30 8.50 8.70
E2 6.85 7.05 7.25
e 2.54
e1 4.88 5.28
H 15.00 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.40
V2 0° 8°
mm
DS9632 - Rev 5
page 11/23
Footprint
STB13N60M2, STD13N60M2
D²PAK (TO-263) type A package information
Figure 22. D²PAK (TO-263) recommended footprint (dimensions are in mm)
DS9632 - Rev 5
page 12/23
4.2 DPAK (TO-252) type A2 package information
0068772_type-A2_rev26
Figure 23. DPAK (TO-252) type A2 package outline
STB13N60M2, STD13N60M2
DPAK (TO-252) type A2 package information
DS9632 - Rev 5
page 13/23
STB13N60M2, STD13N60M2
DPAK (TO-252) type A2 package information
Table 9. DPAK (TO-252) type A2 mechanical data
Dim.
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 4.95 5.10 5.25
E 6.40 6.60
E1 5.10 5.20 5.30
e 2.159 2.286 2.413
e1 4.445 4.572 4.699
H 9.35 10.10
L 1.00 1.50
L1 2.60 2.80 3.00
L2 0.65 0.80 0.95
L4 0.60 1.00
R 0.20
V2 0° 8°
mm
DS9632 - Rev 5
page 14/23
4.3 DPAK (TO-252) type C2 package information
0068772_type-C2_rev26
Figure 24. DPAK (TO-252) type C2 package outline
STB13N60M2, STD13N60M2
DPAK (TO-252) type C2 package information
DS9632 - Rev 5
page 15/23
STB13N60M2, STD13N60M2
DPAK (TO-252) type C2 package information
Table 10. DPAK (TO-252) type C2 mechanical data
Dim.
Min. Typ. Max.
A 2.20 2.30 2.38
A1 0.90 1.01 1.10
A2 0.00 0.10
b 0.72 0.85
b4 5.13 5.33 5.46
c 0.47 0.60
c2 0.47 0.60
D 6.00 6.10 6.20
D1 5.10 5.60
E 6.50 6.60 6.70
E1 5.20 5.50
e 2.186 2.286 2.386
H 9.80 10.10 10.40
L 1.40 1.50 1.70
L1 2.90 REF
L2 0.90 1.25
L3 0.51 BSC
L4 0.60 0.80 1.00
L6 1.80 BSC
θ1 5° 7° 9°
θ2 5° 7° 9°
V2 0° 8°
mm
DS9632 - Rev 5
page 16/23
STB13N60M2, STD13N60M2
DPAK (TO-252) type C2 package information
Figure 25. DPAK (TO-252) recommended footprint (dimensions are in mm)
DS9632 - Rev 5
page 17/23
4.4 D²PAK and DPAK packing information
Figure 26. Tape outline
STB13N60M2, STD13N60M2
D²PAK and DPAK packing information
DS9632 - Rev 5
page 18/23
Figure 27. Reel outline
A
D
B
Full radius
Tape slot
in core for
tape start
2.5mm min.width
G measured
at hub
C
N
40mm min.
access hole
at slot location
T
AM06038v1
STB13N60M2, STD13N60M2
D²PAK and DPAK packing information
Table 11. D²PAK tape and reel mechanical data
Tape
Dim.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3
Min. Max. Min. Max.
mm
Dim.
Reel
mm
DS9632 - Rev 5
page 19/23
STB13N60M2, STD13N60M2
D²PAK and DPAK packing information
Table 12. DPAK tape and reel mechanical data
Tape Reel
Dim.
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R 40
T 0.25 0.35
W 15.7 16.3
mm
Dim.
mm
DS9632 - Rev 5
page 20/23
Revision history
Date Revision Changes
22-Apr-2013 1 First release.
28-Jun-2013 2
03-Mar-2014 3
12-Sep-2016 4
12-Feb-2019 5
STB13N60M2, STD13N60M2
Table 13. Document revision history
– Document status promoted from preliminary data to production data
- Minor text changes
– Updated: Table 10 and Table 25
- Minor text changes
Updated the title, features and the description.
Updated D²PAK (TO-263) type A package information, Section 4.2 DPAK (TO-252) type A2 package
information, Section 4.3 DPAK (TO-252) type C2 package information and Section 4.4 D²PAK and
DPAK packing information.
Updated Section 4 Package information.
Minor text changes.
DS9632 - Rev 5
page 21/23
STB13N60M2, STD13N60M2
Contents
Contents
1 Electrical ratings ..................................................................2
2 Electrical characteristics...........................................................3
2.1 Electrical characteristics (curves) .................................................5
3 Test circuits .......................................................................8
4 Package information ...............................................................9
4.1 D²PAK package information......................................................9
4.2 DPAK (TO-252) type A2 package information ......................................12
4.3 DPAK (TO-252) type C2 package information ......................................14
4.4 D²PAK and DPAK packing information ............................................17
Revision history .......................................................................21
DS9632 - Rev 5
page 22/23
STB13N60M2, STD13N60M2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
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Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS9632 - Rev 5
page 23/23
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