Datasheet STP12NK80Z, STB12NK80Z, STW12NK80Z Datasheet (STMicroelectronics)

STP12NK80Z - STB12NK80Z

STW12NK80Z

N-CHANNEL 800V - 0.65Ω - 10.5A TO-220 / D2PAK / TO-247

Zener-Protected SuperMESH™Power MOSF ET

TYPE V

STP12NK80Z
STB12NK80Z
STW12NK80Z

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING

800 V
800 V
800 V

(on) = 0.65 Ω

DS

DSS

R

DS(on)

<0.75Ω
<0.75Ω
<0.75Ω

I

D

10.5 A

10.5 A

10.5 A

Pw

190 W
190 W
190 W

REPEATIBILITY

DESCRIPTION

The SuperM ESH™ s eries is obtained through an
extreme optimization of ST’s we ll established strip­based PowerMESH™ layout. In addition to pus hing
on-resistance significantly down,specialcareis tak­en to ensure a ver y good dv/dt capab ility for the
most dem anding applications. Such series c omple­ments ST full range of high voltage MOSFETs in­cluding revolutionary MDm es h™ products.

3

2

1

TO-220

2

1

D2PAK

3

TO-247

INTERNAL SCHEMATIC DIAGRAM

3

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP12NK80Z P12NK80Z TO-220 TUBE

STB12NK80ZT4 B12NK80Z

STW12NK80Z W12NK80Z TO-247 TUBE

2

PAK

D

TAPE & REEL

1/12February 2004

STP12NK80Z - STB12NK80Z - STW12NK80Z

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

IDM()

P

TOT

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

T

j

T

stg

() Pulse width limited by safe operating area

≤ 10.5A,di/dt ≤200A/µs, VDD≤ V

(1) I

SD

(*) Limited only by ma ximum temperature allowed

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 0.66 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W

T

l

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

800 V

800 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC=25°C
Drain Current (continuous) at TC = 100°C

10.5 A

6.6 A
Drain Current (pulsed) 42 A
Total Dissipation at TC=25°C

190 W
Derating Factor 1.51 W/°C
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 6000 V

Operating Junction Temperature
Storage Temperature

(BR)DSS,Tj

≤ T

JMAX.

-55 to 150 °C

TO-220/ D²PAK TO-247

Maximum Lead Temperature For Soldering Purpose 300

°C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

=25°C, ID=IAR,VDD=50V)

j

10.5 A

400 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD c apability, but also to make them safely absorb pos sible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to prote ct the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

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STP12NK80Z - STB 12N K80 Z - STW12NK80Z

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=1mA,VGS= 0 800 V

Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

V

=MaxRating

DS

=MaxRating,TC= 125 °C

V

DS

V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 100 µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 5.25 A 0.65 0.75 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(1) Forward Transconductance VDS=15V,ID=5.25A 12 S

fs

C

oss eq.

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

=25V,f=1MHz,VGS= 0 2620

V

DS

250

53

VGS=0V,VDS= 0V to 640V 100 pF

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on Delay Time

t

r

g
gs
gd

Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD=400V,ID=5.25A
R

=4.7Ω VGS=10V

G

(Resistive Load see, Figure 3)

=640V,ID= 10.5 A,

V

DD

V

=10V

GS

30
18

87
14
44

µA
µA

pF
pF
pF

ns
ns

nC
nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

FallTime

VDD=400V,ID=5.25A
R

=4.7Ω VGS=10V

G

70
20

(Resistive Load see, Figure 3)

t

r(Voff)

t

f

t

c

FallTime
Cross-over Time

Off-voltage Rise Time

=640V,ID=10.5A,

V

DD

RG=4.7Ω, VGS= 10V
(Inductive Loadsee, Figure5)

16
15
28

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
ForwardOnVoltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD=10.5A,VGS=0
I

SD

V

DD

(see test circuit, Figure 5)

= 10.5 A, di/dt = 100A/µs

=100V,Tj=150°C

635

5.9

18.5

when VDSincreases from 0 to 80%

oss

10.5
42

1.6 V

ns
ns

ns
ns
ns

A
A

ns

µC

A

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STP12NK80Z - STB12NK80Z - STW12NK80Z

Safe Operating Area for To-220/ D²P A K

Safe Operating Area for To-247

Thermal Impedance for To-220/D²PAK

Thermal Impedance for To-247

Output Characteristics

4/12

Transfer Characteristics

STP12NK80Z - STB 12N K80 Z - STW12NK80Z

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature

5/12

STP12NK80Z - STB12NK80Z - STW12NK80Z

Source-drain Diode Forward Characteristics

Maximum Avalanche Energy vs Temperature

Normalized BVDSS vs Temperature

6/12

STP12NK80Z - STB 12N K80 Z - STW12NK80Z

Fig. 2: Unclamped Induct ive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Induc t ive Load Switching
And Di ode Recovery Times

Fig. 4: Gate Charge tes t Circuit

7/12

STP12NK80Z - STB12NK80Z - STW12NK80Z

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STP12NK80Z - STB 12N K80 Z - STW12NK80Z

D2PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126

R 0.4 0.015
V2 0º 4º

3

9/12

1

STP12NK80Z - STB12NK80Z - STW12NK80Z

TO-247 MECHANICAL DATA

DIM.

A 4.85 5.15 0.19 0.20
D 2.20 2.60 0.08 0.10
E 0.40 0.80 0.015 0.03

F 1 1.40 0.04 0.05
F1 3 0.11
F2 2 0.07
F3 2 2.40 0.07 0.09
F4 3 3.40 0.11 0.13

G 10.90 0.43
H 15.45 15.75 0.60 0.62

L 19.85 20.15 0.78 0.79
L1 3.70 4.30 0.14 0.17
L2 18.50 0.72
L3 14.20 14.80 0.56 0.58
L4 34.60 1.36
L5 5.50 0.21

M 2 3 0.07 0.11

V

V2

Dia 3.55 3.65 0.14 0.143

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

5º 5º

60º 60º

10/12

STP12NK80Z - STB 12N K80 Z - STW12NK80Z

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.9 92
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3. 937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE ME CHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0. 062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0. 153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0. 075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

* on sales ty pe

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

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STP12NK80Z - STB12NK80Z - STW12NK80Z

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
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