• Die Sales: Wafer Form, Tape and Reel, and Bumped Wafers
Two-wire
Serial EEPROM
16K (2048 x 8)
Description
The AT24C16B provides 16384 bits of serial electrically erasable and programmable
read-only memory (EEPROM) organized as 2048 words of 8 bits each. The device is
optimized for use in many industrial and commercial applications where low-power
and low-voltage operation are essential. The AT24C16B is available in space-saving
8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP (MLP 2x3)
SOT23, 8-lead TSSOP, and 8-ball dBGA2 packages and is accessed via a Two-wire
serial interface. In addition, the AT24C16B is available in 1.8V (1.8V to 3.6V) version.
Table 1. Pin Configuration
Pin NameFunction
A0 - A2No Connect
SDASerial Data
SCLSerial Clock Input
WPWrite Protect
GNDGround
VCCPower Supply
8-lead Ultra Thin
Mini-MAP (MLP 2x3)
VCC
WP
SCL
SDA
8
7
6
5
1
2
3
4
A0
A1
A2
GND
8-ball dBGA2
8
VCC
7
WP
6
SCL
5
SDA
Bottom View Bottom View
A0
A1
A2
GND
8-lead SOIC
1
2
3
4
8-lead TSSOP
1
A0
2
A1
3
A2
GND
4
8
VCC
7
WP
6
SCL
5
SDA
, 5-lead
1
A0
2
A1
3
A2
4
GND
8
7
6
5
VCC
WP
SCL
SDA
AT24C16B
Preliminary
SCL
GND
SDA
8-lead PDIP5-lead SOT23
8
1
1
2
3
WP
5
VCC
4
A0
A1
A2
GND
2
3
4
VCC
7
WP
6
SCL
5
SDA
5175B–SEEPR–4/07
1
Absolute Maximum Ratings
Operating Temperature..................................–55°C to +125°C
Storage Temperature .....................................–65°C to +150°C
Voltage on Any Pin
with Respect to Ground ....................................–1.0V to +5.0V
Maximum Operating Voltage ............................................ 4.3V
DC Output Current........................................................ 5.0 mA
Figure 1. Block Diagram
*NOTICE:Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
2
AT24C16B [Preliminary]
5175B–SEEPR–4/07
AT24C16B [Preliminary]
Pin DescriptionSERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each
EEPROM device and negative edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is
open-drain driven and may be wire-ORed with any number of other open-drain or opencollector devices.
DEVICE/PAGE ADDRESSES (A2, A1, A0): The AT24C16B does not use the device
address pins, which limits the number of devices on a single bus to one. The A0, A1, A2
are no connects and can be connected to ground.
WRITE PROTECT (WP): The AT24C16B has a write protect pin that provides hardware
data protection. The write protect pin allows normal read/write operations when connected to ground (GND). When the write protect pin is connected to V
protection feature is enabled and operates as shown in Table 2.
Table 2. Write Protect
Part of the Array Protected
WP Pin
Status
At V
CC
At GNDNormal Read/Write Operations
Full (16K) Array
24C16B
, the write
CC
Memory Organization AT24C16B, 16K SERIAL EEPROM: Internally organized with 128 pages of 16 bytes
each, the 16K requires an 11-bit data word address for random word addressing.
5175B–SEEPR–4/07
3
Table 3. Pin Capacitance
(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V
SymbolTest ConditionMaxUnitsConditions
C
I/O
C
IN
Input/Output Capacitance (SDA)8pFV
Input Capacitance (SCL)6pFVIN = 0V
I/O
= 0V
Note:1. This parameter is characterized and is not 100% tested.
Table 4. DC Characteristics
Applicable over recommended operating range from: T
SymbolParameterTest ConditionMinTypMaxUnits
= −40°C to +85°C, VCC = +1.8V to +3.6V (unless otherwise noted)
AI
V
I
I
I
I
I
V
V
V
V
CC1
CC1
CC2
SB1
LI
LO
IL
IH
OL2
OL1
Supply Voltage1.83.6V
Supply CurrentVCC = 3.6VREAD at 400 kHz1.02.0mA
Supply CurrentVCC = 3.6VWRITE at 400 kHz2.03.0mA
= 1.8V
V
Standby Current
(1.8V option)
Input Leakage CurrentVIN = V
Output Leakage
Current
Input Low Level
Input High Level
(1)
(1)
CC
= 3.6V3.0
V
CC
CC or VSS
= V
V
OUT
CC or VSS
VIN = VCC or V
Output Low LevelVCC = 3.0VIOL = 2.1 mA0.4V
Output Low LevelVCC = 1.8VIOL = 0.15 mA0.2V
Notes: 1. VIL min and VIH max are reference only and are not tested.
1.0µA
SS
0.103.0µA
0.053.0µA
−0.6VCC x 0.3V
VCC x 0.7VCC + 0.5V
4
AT24C16B [Preliminary]
5175B–SEEPR–4/07
Table 5. AC Characteristics (Industrial Temperature)
Applicable over recommended operating range from T
erwise noted). Test conditions are listed in Note 2.
SymbolParameter
AT24C16B [Preliminary]
= −40°C to +85°C, VCC = +1.8V to +3.6V, CL = 100 pF (unless oth-
AI
1.8-volt 2.5-volt3.6-volt
UnitsMinMaxMinMaxMinMax
f
SCL
t
LOW
t
HIGH
t
AA
t
BUF
t
HD.STA
t
SU.STA
t
HD.DAT
t
SU.DAT
t
R
t
F
t
SU.STO
t
DH
t
WR
Endurance
Clock Frequency, SCL40010001000kHz
Clock Pulse Width Low1.30.40.4µs
Clock Pulse Width High0.60.40.4µs
Clock Low to Data Out Valid0.050.90.050.550.050.55µs
Time the bus must be free before a
new transmission can start
(1)
1.30.50.5µs
Start Hold Time0.60.250.25µs
Start Set-up Time0.60.250.25µs
Data In Hold Time000µs
Data In Set-up Time100100100ns
Inputs Rise Time
Inputs Fall Time
(1)
(1)
Stop Set-up Time0.60.250.25µs
Data Out Hold Time505050ns
Write Cycle Time 555ms
(1)
25°C, Page Mode, 3.3V1,000,000
Notes: 1. This parameter is characterized and is not 100% tested.
2. AC measurement conditions:
(connects to VCC): 1.3 kΩ (2.5V, 3.6V), 10 kΩ (1.8V)
R
L
Input pulse voltages: 0.3 VCC to 0.7 V
CC
Input rise and fall times: ≤ 50 ns
Input and output timing reference voltages: 0.5 V
CC
0.30.30.3µs
300100100ns
Write
Cycles
5175B–SEEPR–4/07
5
Device
Operation
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external
device. Data on the SDA pin may change only during SCL low time periods (see Figure 4 on
page 7). Data changes during SCL high periods will indicate a start or stop condition as
defined below.
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which
must precede any other command (see Figure 5 on page 8).
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a
read sequence, the stop command will place the EEPROM in a standby power mode (see Figure 5 on page 8).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the
EEPROM in 8-bit words. The EEPROM sends a zero to acknowledge that it has received each
word. This happens during the ninth clock cycle.
STANDBY MODE: The AT24C16B features a low-power standby mode which is enabled: (a)
upon power-up and (b) after the receipt of the STOP bit and the completion of any internal
operations.
2-WIRE SOFTWARE RESET: After an interruption in protocol, power loss or system reset,
any 2-wire part can be protocol reset by following these steps:
1. Create a start bit condition.
2. Clock 9 cycles.
3. Create another start bit followed by stop bit condition as shown below.
SCL
SDA
Start BitStart BitStop Bit
12389
Dummy Clock Cycles
6
AT24C16B [Preliminary]
5175B–SEEPR–4/07
Bus Timing
S
S
Figure 2. SCL: Serial Clock, SDA: Serial Data I/O®
Write Cycle Timing
Figure 3. SCL: Serial Clock, SDA: Serial Data I/O
AT24C16B [Preliminary]
CL
DA
Note:1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
8th BIT
WORDn
ACK
STOP
CONDITION
(1)
t
wr
START
CONDITION
Figure 4. Data Validity
7
5175B–SEEPR–4/07
Figure 5. Start and Stop Definition
Figure 6. Output Acknowledge
8
AT24C16B [Preliminary]
5175B–SEEPR–4/07
AT24C16B [Preliminary]
Device
Addressing
Write
Operations
The 16K EEPROM device requires an 8-bit device address word following a start condition to
enable the chip for a read or write operation (refer to Figure 7).
The device address word consists of a mandatory one, zero sequence for the first four most
significant bits as shown. This is common to all the EEPROM devices.
The next 3 bits used for memory page addressing and are the most significant bits of the data
word address which follows.
The eighth bit of the device address is the read/write operation select bit. A read operation is
initiated if this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a zero. If a compare is not
made, the chip will return to a standby state.
BYTE WRITE: A write operation requires an 8-bit data word address following the device
address word and acknowledgment. Upon receipt of this address, the EEPROM will again
respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit
data word, the EEPROM will output a zero and the addressing device, such as a microcontroller, must terminate the write sequence with a stop condition. At this time the EEPROM enters
an internally timed write cycle, t
this write cycle and the EEPROM will not respond until the write is complete (see Figure 8 on
page 11).
PAGE WRITE: The 16K EEPROM is capable of an 16-byte page write.
A page write is initiated the same as a byte write, but the microcontroller does not send a stop
condition after the first data word is clocked in. Instead, after the EEPROM acknowledges
receipt of the first data word, the microcontroller can transmit up to fifteen data words. The
EEPROM will respond with a zero after each data word received. The microcontroller must terminate the page write sequence with a stop condition (see Figure 9 on page 11).
, to the nonvolatile memory. All inputs are disabled during
WR
Read
Operations
The data word address lower three bits are internally incremented following the receipt of each
data word. The higher data word address bits are not incremented, retaining the memory page
row location. When the word address, internally generated, reaches the page boundary, the
following byte is placed at the beginning of the same page. If more than sixteen data words
are transmitted to the EEPROM, the data word address will “roll over” and previous data will
be overwritten.
ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
operation desired. Only if the internal write cycle has completed will the EEPROM respond
with a zero allowing the read or write sequence to continue.
Read operations are initiated the same way as write operations with the exception that the
read/write select bit in the device address word is set to one. There are three read operations:
current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last
address accessed during the last read or write operation, incremented by one. This address
stays valid between operations as long as the chip power is maintained. The address “roll
over” during read is from the last byte of the last memory page to the first byte of the first page.
The address “roll over” during write is from the last byte of the current page to the first byte of
the same page.
5175B–SEEPR–4/07
9
Once the device address with the read/write select bit set to one is clocked in and acknowledged by the EEPROM, the current address data word is serially clocked out. The
microcontroller does not respond with an input zero but does generate a following stop condition (see Figure 10 on page 11).
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data
word address. Once the device address word and data word address are clocked in and
acknowledged by the EEPROM, the microcontroller must generate another start condition.
The microcontroller now initiates a current address read by sending a device address with the
read/write select bit high. The EEPROM acknowledges the device address and serially clocks
out the data word. The microcontroller does not respond with a zero but does generate a following stop condition (see Figure 11 on page 12).
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds with an
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment
the data word address and serially clock out sequential data words. When the memory
address limit is reached, the data word address will “roll over” and the sequential read will continue. The sequential read operation is terminated when the microcontroller does not respond
with a zero but does generate a following stop condition (see Figure 12 on page 12).
10
AT24C16B [Preliminary]
5175B–SEEPR–4/07
Figure 7. Device Address
AT24C16B [Preliminary]
Figure 8. Byte Write
Figure 9. Page Write
16
MSB
PPP
10
2
Figure 10. Current Address Read
5175B–SEEPR–4/07
11
Figure 11. Random Read
Figure 12. Sequential Read
12
AT24C16B [Preliminary]
5175B–SEEPR–4/07
AT24C16B [Preliminary]
AT24C16B Ordering Information
Ordering CodesVoltagePackageOperating Range
AT24C16B-PU (Bulk Form Only)1.88P3
(1)
AT24C16BN-SH-B
AT24C16BN-SH-T
AT24C16B-TH-B
AT24C16B-TH-T
AT24C16BY6-YH-T
AT24C16BTSU-T
AT24C16BU3-UU-T
AT24C16B-W-11
Notes: 1. “-B” denotes bulk.
2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP, Ultra Thin Mini MAP, SOT23, dBGA2 = 5K per reel.
3. Available in tape and reel, and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request.
8S18-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A28-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
8Y68-lead, 2.0 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP 2x3 mm)
5TS15-lead, 2.90 mm x 1.60 mm Body, Plastic Thin Shrink Small Outline Package (SOT23)
8U3-18-ball, die Ball Grid Array Package (dBGA2)
Options
–1.8Low-voltage (1.8V to 3.6V)
5175B–SEEPR–4/07
13
Packaging Information
8P3 – PDIP
D1
b3
4 PLCS
Top View
D
e
Side View
1
E
E1
N
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
b
b2
A2 A
SYMBOL
A
A2 0.115 0.130 0.195
b 0.014 0.018 0.022 5
b2 0.045 0.060 0.070 6
b3 0.030 0.039 0.045 6
c 0.008 0.010 0.014
D 0.355 0.365 0.400 3
L
D1 0.005
E 0.300 0.310 0.325 4
E1 0.240 0.250 0.280 3
e 0.100 BSC
eA 0.300 BSC 4
L 0.115 0.130 0.150 2
MIN
NOM
–
–
–
MAX
0.210 2
NOTE
–
3
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA, for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
14
2325 Orchard Parkway
R
San Jose, CA 95131
TITLE
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
AT24C16B [Preliminary]
DRAWING NO.
01/09/02
8P3
5175B–SEEPR–4/07
REV.
B
8S1 – JEDEC SOIC
AT24C16B [Preliminary]
C
1
E
N
∅
E1
L
Top View
End View
e
D
Side View
B
A
SYMBOL
A1
A1.35–1.75
A10.10–0.25
b0.31–0.51
C0.17–0.25
D4.80–5.00
E13.81–3.99
E5.79–6.20
e1.27 BSC
L0.40–1.27
∅0˚–8˚
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
NOM
MAX
NOTE
Note:
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
R
5175B–SEEPR–4/07
TITLE
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC)
DRAWING NO.
8S1B
10/7/03
REV.
15
8A2 – TSSOP
Pin 1 indicator
this corner
123
N
Top View
b
e
D
Side View
A2
E1
E
L1
L
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A
D2.903.003.102, 5
E6.40 BSC
E14.304.404.503, 5
A––1.20
A20.801.001.05
b0.19–0.304
e0.65 BSC
L0.450.600.75
L11.00 REF
MIN
NOM
MAX
NOTE
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
16
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusionsand gate burrsshall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusionss
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Dat
um Plane H.
TITLE
2325 Orchard Parkway
R
San Jose, CA 95131
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
hall not exceed 0.25 mm
DRAWING NO.
8A2
AT24C16B [Preliminary]
5175B–SEEPR–4/07
5/30/02
REV.
B
8Y6 - Mini Map
A2
(8X)
Pin 1 ID
Pin 1
Index
Area
A1
A3
L (8X)
e (6X)
1.50 REF.
D2
E2
AT24C16B [Preliminary]
A
Pin 1
Index
Area
E
D
A2
A3
A1
E2
D2
e (6X)
1.50 REF.
COMMON DIMENSIONS
b
(8X)
Pin 1 ID
L (8X)
(Unit of Measure = mm)
SYMBOL
MIN
NOM
MAX
NOTE
D 2.00 BSC
E 3.00 BSC
D2 1.40 1.50 1.60
E2 - - 1.40
A - - 0.60
A1 0.0 0.02 0.05
A2 - - 0.55
A3 0.20 REF
L 0.20 0.30 0.40
e 0.50 BSC
b 0.20 0.25 0.30 2
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-229, for proper dimensions,
tolerances, datums, etc.
2. Dimension b applies to metallized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the
terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area.
2325 Orchard Parkway
R
San Jose, CA 95131
5175B–SEEPR–4/07
TITLE
8Y6, 8-lead 2.0 x 3.0 mm Body, 0.50 mm Pitch, Utlra Thin Mini-Map,
Dual No Lead Package (DFN), (MLP 2x3)
DRAWING NO.
8Y6
8/26/05
REV.
C
17
5TS1 – SOT23
e1
E1
5
4
E
C
C
L
L1
1
2
Top View
3
End View
b
A2
A
Seating
Plane
e
D
Side View
NOTES: 1. This drawing is for general information only. Refer to JEDEC Drawing
MO-193, Variation AB, for additional information.
2. Dimension D does not include mold flash, protrusions, or gate burrs.
Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per end.
Dimension E1 does not include interlead flash or protrusion. Interlead
flash or protrusion shall not exceed 0.15 mm per side.
3. The package top may be smaller than the package bottom. Dimensions
D and E1 are determined at the outermost extremes of the plastic body
exclusive of mold flash, tie bar burrs, gate burrs, and interlead flash, but
including any mismatch between the top and bottom of the plastic body.
4. These dimensions apply to the flat section of the lead between 0.08 mm
and 0.15 mm from the lead tip.
5. Dimension "b" does not include Dambar protrusion. Allowable Dambar
protrusion shall be 0.08 mm total in excess of the "b" dimension at
maximum material condition. The Dambar cannot be located on the lower
radius of the foot. Minimum space between protrusion and an adjacent lead
shall not be less than 0.07 mm.
1150 E. Cheyenne Mtn. Blvd.
R
Colorado Springs, CO 80906
TITLE
5TS1, 5-lead, 1.60 mm Body, Plastic Thin Shrink
Small Outline Package (SHRINK SOT)
A1
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A– –1.10
A10.00–0.10
A20.700.901.00
c0.08 –0.204
D2.90 BSC2, 3
E2.80 BSC2, 3
E11.60 BSC2, 3
L10.60 REF
e0.95 BSC
e11.90 BSC
b0.30–0.504, 5
MIN
NOM
MAX
DRAWING NO.
PO5TS1 A
NOTE
6/25/03
REV.
18
AT24C16B [Preliminary]
5175B–SEEPR–4/07
8U3-1 – dBGA2
AT24C16B [Preliminary]
E
D
PIN 1 BALL PAD CORNER
Top View
PIN 1 BALL PAD CORNER
2
31
4
(d1)
d
8
67
5
e
(e1)
Bottom View
8 SOLDER BALLS
1. Dimension “b” is measured at the maximum solder ball diameter.
This drawing is for general information only.
A
2
A
Side View
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A 0.71 0.81 0.91
A1 0.10 0.15 0.20
A2 0.40 0.45 0.50
b 0.20 0.25 0.30
D 1.50 BSC
E 2.00 BSC
e 0.50 BSC
e1 0.25 REF
d 1.00 BSC
d1 0.25 REF
MIN
NOM
1.
b
A
1
MAX
NOTE
R
5175B–SEEPR–4/07
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE
8U3-1, 8-ball, 1.50 x 2.00 mm Body, 0.50 mm pitch,
Small Die Ball Grid Array Package (dBGA2)
DRAWING NO.
PO8U3-1 A
6/24/03
REV.
19
Revision History
Lit No.DateComment
Removed reference to Waffle Pack
5175B4/2007
5175A3/2007Initial document release
Corrected Note 3 on Page 13
Added lines to Ordering Code table
20
AT24C16B [Preliminary]
5175B–SEEPR–4/07
Atmel CorporationAtmel Operations
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Regional Headquarters
Europe
Atmel Sarl
Route des Arsenaux 41
Case Postale 80
CH-1705 Fribourg
Switzerland
Tel: (41) 26-426-5555
Fax: (41) 26-426-5500
Asia
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Memory
2325 Orchard Parkway
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