ST MICROELECTRONICS ST 24C16 MN6 Datasheet

Features

Low-voltage and Standard-voltage Operation
– 1.8 (VCC = 1.8V to 3.6V)
Internally Organized 2048 x 8 (16K)
Two-wire Serial Interface
Schmitt Trigger, Filtered Inputs for Noise Suppression
Bidirectional Data Transfer Protocol
1 MHz (3.6V, 2.7V, 2.5V), 400 kHz (1.8V) Compatibility
Write Protect Pin for Hardware Data Protection
16-byte Page (16K) Write Modes
Partial Page Writes Allowed
Self-timed Write Cycle (5 ms max)
High-reliability
– Endurance: 1 Million Write Cycles – Data Retention: 100 Years
8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra-Thin Mini-MAP (MLP 2x3), 5-lead SOT23,
8-lead TSSOP and 8-ball dBGA2 Packages
Lead-free/Halogen-free
Die Sales: Wafer Form, Tape and Reel, and Bumped Wafers
Two-wire Serial EEPROM
16K (2048 x 8)

Description

The AT24C16B provides 16384 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 2048 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. The AT24C16B is available in space-saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP (MLP 2x3) SOT23, 8-lead TSSOP, and 8-ball dBGA2 packages and is accessed via a Two-wire serial interface. In addition, the AT24C16B is available in 1.8V (1.8V to 3.6V) version.
Table 1. Pin Configuration
Pin Name Function
A0 - A2 No Connect
SDA Serial Data
SCL Serial Clock Input
WP Write Protect
GND Ground
VCC Power Supply
8-lead Ultra Thin
Mini-MAP (MLP 2x3)
VCC
WP
SCL
SDA
A0 A1 A2 GND
8-ball dBGA2
8
VCC
7
WP
6
SCL
5
SDA
Bottom View Bottom View
A0 A1 A2
GND
8-lead SOIC
8-lead TSSOP
A0
A1
A2
GND
VCC
WP
SCL
SDA
, 5-lead
1
A0
2
A1
3
A2
4
GND
VCC WP SCL SDA
AT24C16B
Preliminary
SCL
GND
SDA
8-lead PDIP5-lead SOT23
WP
VCC
A0 A1 A2
GND
VCC
WP
SCL
SDA
5175B–SEEPR–4/07
1
Absolute Maximum Ratings
Operating Temperature..................................–55°C to +125°C
Storage Temperature .....................................–65°C to +150°C
Voltage on Any Pin
with Respect to Ground ....................................–1.0V to +5.0V
Maximum Operating Voltage ............................................ 4.3V
DC Output Current........................................................ 5.0 mA
Figure 1. Block Diagram
*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam­age to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
AT24C16B [Preliminary]
5175B–SEEPR–4/07
AT24C16B [Preliminary]

Pin Description SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each

EEPROM device and negative edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is open-drain driven and may be wire-ORed with any number of other open-drain or open­collector devices.
DEVICE/PAGE ADDRESSES (A2, A1, A0): The AT24C16B does not use the device address pins, which limits the number of devices on a single bus to one. The A0, A1, A2 are no connects and can be connected to ground.
WRITE PROTECT (WP): The AT24C16B has a write protect pin that provides hardware data protection. The write protect pin allows normal read/write operations when con­nected to ground (GND). When the write protect pin is connected to V protection feature is enabled and operates as shown in Table 2.
Table 2. Write Protect
Part of the Array Protected
WP Pin Status
At V
CC
At GND Normal Read/Write Operations
Full (16K) Array
24C16B
, the write
CC

Memory Organization AT24C16B, 16K SERIAL EEPROM: Internally organized with 128 pages of 16 bytes

each, the 16K requires an 11-bit data word address for random word addressing.
5175B–SEEPR–4/07
3
Table 3. Pin Capacitance
(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V
Symbol Test Condition Max Units Conditions
C
I/O
C
IN
Input/Output Capacitance (SDA) 8 pF V
Input Capacitance (SCL) 6 pF VIN = 0V
I/O
= 0V
Note: 1. This parameter is characterized and is not 100% tested.
Table 4. DC Characteristics
Applicable over recommended operating range from: T
Symbol Parameter Test Condition Min Typ Max Units
= 40°C to +85°C, VCC = +1.8V to +3.6V (unless otherwise noted)
AI
V
I
I
I
I
I
V
V
V
V
CC1
CC1
CC2
SB1
LI
LO
IL
IH
OL2
OL1
Supply Voltage 1.8 3.6 V
Supply Current VCC = 3.6V READ at 400 kHz 1.0 2.0 mA
Supply Current VCC = 3.6V WRITE at 400 kHz 2.0 3.0 mA
= 1.8V
V
Standby Current (1.8V option)
Input Leakage Current VIN = V
Output Leakage Current
Input Low Level
Input High Level
(1)
(1)
CC
= 3.6V 3.0
V
CC
CC or VSS
= V
V
OUT
CC or VSS
VIN = VCC or V
Output Low Level VCC = 3.0V IOL = 2.1 mA 0.4 V
Output Low Level VCC = 1.8V IOL = 0.15 mA 0.2 V
Notes: 1. VIL min and VIH max are reference only and are not tested.
1.0 µA
SS
0.10 3.0 µA
0.05 3.0 µA
0.6 VCC x 0.3 V
VCC x 0.7 VCC + 0.5 V
4
AT24C16B [Preliminary]
5175B–SEEPR–4/07
Table 5. AC Characteristics (Industrial Temperature)
Applicable over recommended operating range from T erwise noted). Test conditions are listed in Note 2.
Symbol Parameter
AT24C16B [Preliminary]
= 40°C to +85°C, VCC = +1.8V to +3.6V, CL = 100 pF (unless oth-
AI
1.8-volt 2.5-volt 3.6-volt
UnitsMin Max Min Max Min Max
f
SCL
t
LOW
t
HIGH
t
AA
t
BUF
t
HD.STA
t
SU.STA
t
HD.DAT
t
SU.DAT
t
R
t
F
t
SU.STO
t
DH
t
WR
Endurance
Clock Frequency, SCL 400 1000 1000 kHz
Clock Pulse Width Low 1.3 0.4 0.4 µs
Clock Pulse Width High 0.6 0.4 0.4 µs
Clock Low to Data Out Valid 0.05 0.9 0.05 0.55 0.05 0.55 µs
Time the bus must be free before a new transmission can start
(1)
1.3 0.5 0.5 µs
Start Hold Time 0.6 0.25 0.25 µs
Start Set-up Time 0.6 0.25 0.25 µs
Data In Hold Time 0 0 0 µs
Data In Set-up Time 100 100 100 ns
Inputs Rise Time
Inputs Fall Time
(1)
(1)
Stop Set-up Time 0.6 0.25 0.25 µs
Data Out Hold Time 50 50 50 ns
Write Cycle Time 5 5 5 ms
(1)
25°C, Page Mode, 3.3V 1,000,000
Notes: 1. This parameter is characterized and is not 100% tested.
2. AC measurement conditions: (connects to VCC): 1.3 k (2.5V, 3.6V), 10 k (1.8V)
R
L
Input pulse voltages: 0.3 VCC to 0.7 V
CC
Input rise and fall times: 50 ns Input and output timing reference voltages: 0.5 V
CC
0.3 0.3 0.3 µs
300 100 100 ns
Write
Cycles
5175B–SEEPR–4/07
5

Device Operation

CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external
device. Data on the SDA pin may change only during SCL low time periods (see Figure 4 on page 7). Data changes during SCL high periods will indicate a start or stop condition as defined below.
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which must precede any other command (see Figure 5 on page 8).
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a read sequence, the stop command will place the EEPROM in a standby power mode (see Fig­ure 5 on page 8).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the EEPROM in 8-bit words. The EEPROM sends a zero to acknowledge that it has received each word. This happens during the ninth clock cycle.
STANDBY MODE: The AT24C16B features a low-power standby mode which is enabled: (a) upon power-up and (b) after the receipt of the STOP bit and the completion of any internal operations.
2-WIRE SOFTWARE RESET: After an interruption in protocol, power loss or system reset, any 2-wire part can be protocol reset by following these steps:
1. Create a start bit condition.
2. Clock 9 cycles.
3. Create another start bit followed by stop bit condition as shown below.
SCL
SDA
Start Bit Start Bit Stop Bit
123 89
Dummy Clock Cycles
6
AT24C16B [Preliminary]
5175B–SEEPR–4/07

Bus Timing

S
S
Figure 2. SCL: Serial Clock, SDA: Serial Data I/O®

Write Cycle Timing

Figure 3. SCL: Serial Clock, SDA: Serial Data I/O
AT24C16B [Preliminary]
CL
DA
Note: 1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
8th BIT
WORDn
ACK
STOP
CONDITION
(1)
t
wr
START
CONDITION
Figure 4. Data Validity
7
5175B–SEEPR–4/07
Figure 5. Start and Stop Definition
Figure 6. Output Acknowledge
8
AT24C16B [Preliminary]
5175B–SEEPR–4/07
AT24C16B [Preliminary]

Device Addressing

Write Operations

The 16K EEPROM device requires an 8-bit device address word following a start condition to enable the chip for a read or write operation (refer to Figure 7).
The device address word consists of a mandatory one, zero sequence for the first four most significant bits as shown. This is common to all the EEPROM devices.
The next 3 bits used for memory page addressing and are the most significant bits of the data word address which follows.
The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a zero. If a compare is not made, the chip will return to a standby state.
BYTE WRITE: A write operation requires an 8-bit data word address following the device address word and acknowledgment. Upon receipt of this address, the EEPROM will again respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit data word, the EEPROM will output a zero and the addressing device, such as a microcontrol­ler, must terminate the write sequence with a stop condition. At this time the EEPROM enters an internally timed write cycle, t this write cycle and the EEPROM will not respond until the write is complete (see Figure 8 on page 11).
PAGE WRITE: The 16K EEPROM is capable of an 16-byte page write.
A page write is initiated the same as a byte write, but the microcontroller does not send a stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller can transmit up to fifteen data words. The EEPROM will respond with a zero after each data word received. The microcontroller must ter­minate the page write sequence with a stop condition (see Figure 9 on page 11).
, to the nonvolatile memory. All inputs are disabled during
WR

Read Operations

The data word address lower three bits are internally incremented following the receipt of each data word. The higher data word address bits are not incremented, retaining the memory page row location. When the word address, internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than sixteen data words are transmitted to the EEPROM, the data word address will “roll over” and previous data will be overwritten.
ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a start condition followed by the device address word. The read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPROM respond with a zero allowing the read or write sequence to continue.
Read operations are initiated the same way as write operations with the exception that the read/write select bit in the device address word is set to one. There are three read operations: current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last address accessed during the last read or write operation, incremented by one. This address stays valid between operations as long as the chip power is maintained. The address “roll over” during read is from the last byte of the last memory page to the first byte of the first page. The address “roll over” during write is from the last byte of the current page to the first byte of the same page.
5175B–SEEPR–4/07
9
Once the device address with the read/write select bit set to one is clocked in and acknowl­edged by the EEPROM, the current address data word is serially clocked out. The microcontroller does not respond with an input zero but does generate a following stop condi­tion (see Figure 10 on page 11).
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data word address. Once the device address word and data word address are clocked in and acknowledged by the EEPROM, the microcontroller must generate another start condition. The microcontroller now initiates a current address read by sending a device address with the read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the data word. The microcontroller does not respond with a zero but does generate a fol­lowing stop condition (see Figure 11 on page 12).
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a ran­dom address read. After the microcontroller receives a data word, it responds with an acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment the data word address and serially clock out sequential data words. When the memory address limit is reached, the data word address will “roll over” and the sequential read will con­tinue. The sequential read operation is terminated when the microcontroller does not respond with a zero but does generate a following stop condition (see Figure 12 on page 12).
10
AT24C16B [Preliminary]
5175B–SEEPR–4/07
Figure 7. Device Address
AT24C16B [Preliminary]
Figure 8. Byte Write
Figure 9. Page Write
16
MSB
PPP
10
2
Figure 10. Current Address Read
5175B–SEEPR–4/07
11
Figure 11. Random Read
Figure 12. Sequential Read
12
AT24C16B [Preliminary]
5175B–SEEPR–4/07
AT24C16B [Preliminary]
AT24C16B Ordering Information
Ordering Codes Voltage Package Operating Range
AT24C16B-PU (Bulk Form Only) 1.8 8P3
(1)
AT24C16BN-SH-B
AT24C16BN-SH-T
AT24C16B-TH-B
AT24C16B-TH-T
AT24C16BY6-YH-T
AT24C16BTSU-T
AT24C16BU3-UU-T
AT24C16B-W-11
Notes: 1. “-B” denotes bulk.
2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP, Ultra Thin Mini MAP, SOT23, dBGA2 = 5K per reel.
3. Available in tape and reel, and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request.
Please contact Serial Interface Marketing.
(NiPdAu Lead Finish) 1.8 8S1
(2)
(NiPdAu Lead Finish) 1.8 8S1
(1)
(NiPdAu Lead Finish) 1.8 8A2
(2)
(NiPdAu Lead Finish) 1.8 8A2
(2)
(NiPdAu Lead Finish) 1.8 8Y6
(2)
(2)
(3)
1.8 5TS1
1.8 8U3-1
1.8 Die Sales
Lead-Free/Halogen-Free
Industrial Temperature
(-40°C to 85°C)
Industrial Temperature
(-40°C to 85°C)
Package Type
8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
8Y6 8-lead, 2.0 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead Package (DFN), (MLP 2x3 mm)
5TS1 5-lead, 2.90 mm x 1.60 mm Body, Plastic Thin Shrink Small Outline Package (SOT23)
8U3-1 8-ball, die Ball Grid Array Package (dBGA2)
Options
1.8 Low-voltage (1.8V to 3.6V)
5175B–SEEPR–4/07
13

Packaging Information

8P3 – PDIP
D1
b3
4 PLCS
Top View
D
e
Side View
1
E
E1
N
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
b
b2
A2 A
SYMBOL
A
A2 0.115 0.130 0.195
b 0.014 0.018 0.022 5
b2 0.045 0.060 0.070 6
b3 0.030 0.039 0.045 6
c 0.008 0.010 0.014
D 0.355 0.365 0.400 3
L
D1 0.005
E 0.300 0.310 0.325 4
E1 0.240 0.250 0.280 3
e 0.100 BSC
eA 0.300 BSC 4
L 0.115 0.130 0.150 2
MIN
NOM
MAX
0.210 2
NOTE
3
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA, for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
14
2325 Orchard Parkway
R
San Jose, CA 95131
TITLE
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
AT24C16B [Preliminary]
DRAWING NO.
01/09/02
8P3
5175B–SEEPR–4/07
REV.
B
8S1 – JEDEC SOIC
AT24C16B [Preliminary]
C
1
E
N
E1
L
Top View
End View
e
D
Side View
B
A
SYMBOL
A1
A 1.35 1.75
A1 0.10 0.25
b 0.31 0.51
C 0.17 0.25
D 4.80 5.00
E1 3.81 3.99
E 5.79 6.20
e 1.27 BSC
L 0.40 1.27
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
NOM
MAX
NOTE
Note:
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906
R
5175B–SEEPR–4/07
TITLE 8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC)
DRAWING NO.
8S1 B
10/7/03
REV.
15
8A2 – TSSOP
Pin 1 indicator
this corner
123
N
Top View
b
e
D
Side View
A2
E1
E
L1
L
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A
D 2.90 3.00 3.10 2, 5
E 6.40 BSC
E1 4.30 4.40 4.50 3, 5
A 1.20
A2 0.80 1.00 1.05
b 0.19 0.304
e 0.65 BSC
L 0.45 0.60 0.75
L1 1.00 REF
MIN
NOM
MAX
NOTE
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
16
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions s (0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Dat
um Plane H.
TITLE
2325 Orchard Parkway
R
San Jose, CA 95131
8A2, 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
hall not exceed 0.25 mm
DRAWING NO.
8A2
AT24C16B [Preliminary]
5175B–SEEPR–4/07
5/30/02
REV.
B

8Y6 - Mini Map

A2
(8X)
Pin 1 ID
Pin 1 Index Area
A1
A3
L (8X)
e (6X)
1.50 REF.
D2
E2
AT24C16B [Preliminary]
A
Pin 1 Index Area
E
D
A2
A3
A1
E2
D2
e (6X)
1.50 REF.
COMMON DIMENSIONS
b
(8X)
Pin 1 ID
L (8X)
(Unit of Measure = mm)
SYMBOL
MIN
NOM
MAX
NOTE
D 2.00 BSC
E 3.00 BSC
D2 1.40 1.50 1.60
E2 - - 1.40
A - - 0.60
A1 0.0 0.02 0.05
A2 - - 0.55
A3 0.20 REF
L 0.20 0.30 0.40
e 0.50 BSC
b 0.20 0.25 0.30 2
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-229, for proper dimensions, tolerances, datums, etc.
2. Dimension b applies to metallized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the
terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area.
2325 Orchard Parkway
R
San Jose, CA 95131
5175B–SEEPR–4/07
TITLE
8Y6, 8-lead 2.0 x 3.0 mm Body, 0.50 mm Pitch, Utlra Thin Mini-Map,
Dual No Lead Package (DFN), (MLP 2x3)
DRAWING NO.
8Y6
8/26/05
REV.
C
17
5TS1 – SOT23
e1
E1
5
4
E
C
C
L
L1
1
2
Top View
3
End View
b
A2
A
Seating
Plane
e
D
Side View
NOTES: 1. This drawing is for general information only. Refer to JEDEC Drawing
MO-193, Variation AB, for additional information.
2. Dimension D does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per end. Dimension E1 does not include interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.15 mm per side.
3. The package top may be smaller than the package bottom. Dimensions D and E1 are determined at the outermost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs, and interlead flash, but including any mismatch between the top and bottom of the plastic body.
4. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip.
5. Dimension "b" does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the "b" dimension at maximum material condition. The Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and an adjacent lead shall not be less than 0.07 mm.
1150 E. Cheyenne Mtn. Blvd.
R
Colorado Springs, CO 80906
TITLE 5TS1, 5-lead, 1.60 mm Body, Plastic Thin Shrink
Small Outline Package (SHRINK SOT)
A1
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A 1.10
A1 0.00 0.10
A2 0.70 0.90 1.00
c 0.08 0.20 4
D 2.90 BSC 2, 3
E 2.80 BSC 2, 3
E1 1.60 BSC 2, 3
L1 0.60 REF
e 0.95 BSC
e1 1.90 BSC
b 0.30 0.50 4, 5
MIN
NOM
MAX
DRAWING NO.
PO5TS1 A
NOTE
6/25/03
REV.
18
AT24C16B [Preliminary]
5175B–SEEPR–4/07
8U3-1 – dBGA2
AT24C16B [Preliminary]
E
D
PIN 1 BALL PAD CORNER
Top View
PIN 1 BALL PAD CORNER
2
31
4
(d1)
d
8
67
5
e
(e1)
Bottom View
8 SOLDER BALLS
1. Dimension “b” is measured at the maximum solder ball diameter.
This drawing is for general information only.
A
2
A
Side View
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A 0.71 0.81 0.91
A1 0.10 0.15 0.20
A2 0.40 0.45 0.50
b 0.20 0.25 0.30
D 1.50 BSC
E 2.00 BSC
e 0.50 BSC
e1 0.25 REF
d 1.00 BSC
d1 0.25 REF
MIN
NOM
1.
b
A
1
MAX
NOTE
R
5175B–SEEPR–4/07
1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906
TITLE
8U3-1, 8-ball, 1.50 x 2.00 mm Body, 0.50 mm pitch,
Small Die Ball Grid Array Package (dBGA2)
DRAWING NO.
PO8U3-1 A
6/24/03
REV.
19

Revision History

Lit No. Date Comment
Removed reference to Waffle Pack
5175B 4/2007
5175A 3/2007 Initial document release
Corrected Note 3 on Page 13 Added lines to Ordering Code table
20
AT24C16B [Preliminary]
5175B–SEEPR–4/07
Atmel Corporation Atmel Operations
2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600
Regional Headquarters
Europe
Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500
Asia
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