STMicroelectronics PD55015S-E Service Manual
www.DataSheet4U.com
N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration
■ P
■ New RF plastic package
Description
= 15W with 14dB gain @ 500MHz / 12.5V
OUT
PD55015-E
PD55015S-E
RF POWER transistor, LDMOST plastic family
PowerSO-10RF
(formed lead)
The PD55015 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies of up to 1 GHz. PD55015 boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD55015’s superior linearity performance makes
it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
PowerSO-10RF
(straight lead)
Pin connection
Gate
Source
Drain
Order codes
Part number Package Packing
PD55015-E PowerSO-10RF (formed lead) Tube
PD55015S-E PowerSO-10RF (straight lead) Tube
PD55015TR-E PowerSO-10RF (formed lead) Tape and reel
PD55015STR-E PowerSO-10RF (straight lead) Tape and reel
August 2006 Rev 1 1/27
www.st.com
27
Contents PD55015-E, PD55015S-E
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
7 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7.1 PD55015S (VDS = 12.5V IDS = 225mA) . . . . . . . . . . . . . . . . . . . . . . . . . 15
7.2 PD55015S (VDS = 12.5V IDS = 1.2A) . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7.3 PD55015S (VDS = 12.5V IDS = 2.25A) . . . . . . . . . . . . . . . . . . . . . . . . . . 17
7.4 PD55015 (VDS = 12.5V IDS = 225mA) . . . . . . . . . . . . . . . . . . . . . . . . . . 18
7.5 PD55015 (VDS = 12.5V IDS = 1.2A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
7.6 PD55015 (VDS = 12.5V IDS = 2.25A) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
2/27
PD55015-E, PD55015S-E Electrical data
1 Electrical data
1.1 Maximum ratings
Table 1. Absolute maximum ratings (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
P
DISS
T
T
STG
D
J
Drain-source voltage 40 V
Gate-source voltage ± 20 V
Drain current 5 A
Power dissipation (@ TC = 70°C) 73 W
Max. operating junction temperature 165 °C
Storage temperature -65 to +150 °C
1.2 Thermal data
Table 2. Thermal data
Symbol Parameter Value Unit
R
thJC
Junction - case thermal resistance 1.2 °C/W
CASE
= 25°C)
3/27
Electrical characteristics PD55015-E, PD55015S-E
2 Electrical characteristics
T
= +25 oC
CASE
2.1 Static
Table 3. Static
Symbol Test conditions Min Typ Max Unit
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)VGS
g
FS
C
ISS
C
OSS
C
RSS
2.2 Dynamic
Table 4. Dynamic
Symbol Test conditions Min Typ Max Unit
P
1dB
G
P
n
D
Load
mismatch
VGS = 0V VDS = 28V 1 µA
VGS = 20V VDS = 0V 1 µA
VDS = 10V
= 150mA 2.0 5.0 V
ID
= 10V ID = 2.5A 0.8 V
VDS = 10V ID = 2.5A 2.0 2.5 mho
VGS = 0V VDS = 12.5V f = 1MHz 89 pF
VGS = 0V VDS = 12.5V f = 1MHz 60 pF
VGS = 0V VDS = 12.5V f = 1MHz 6.5 pF
VDD = 12.5V, IDQ = 150mA f = 500MHz 15 W
VDD = 12.5V, IDQ = 150mA, P
VDD = 12.5V, IDQ = 150mA, P
V
= 15.5V, IDQ = 150mA, P
DD
All phase angles
= 15W, f = 500MHz 12 14 dB
OUT
= 15W, f = 500MHz 50 55 %
OUT
= 15W, f = 500MHz
OUT
20:1 VSWR
4/27
PD55015-E, PD55015S-E Impedance
3 Impedance
Figure 1. Current conventions
Table 5. Impedance data
PD55015 PD55015S
Freq. (MHz) Z
480 1.58 + j 0.56 1.27 - j 1.36 480 1.30 - j 0.54 1.18 + j 0.04
500 1.53 + j 0.77 1.51 - j 1.81 500 1.26 - j 0.30 1.32 - j 0.22
520 1.70 + j 1.17 1.44 - j 2.13 520 1.34 - j 0.11 1.46 - j 0.22
(Ω)Z
IN
(Ω) Freq. (MHz) ZIN (Ω)Z
DL
876 0.33 + j 0.44 1.36 - j 0.21
900 0.33 + j 0.70 1.29 - j 1.03
915 0.33 + j 0.87 1.27 - j 0.37
DL
(Ω)
5/27
Typical performance PD55015-E, PD55015S-E
4 Typical performance
Figure 2. Capacitance vs drain voltage Figure 3. Drain current vs gate voltage
C (pF)
1000
4
3.5
3
100
10
f=1 M H z
1
0 5 10 15 20 25 30
VDS (V)
Ciss
Coss
Crss
2.5
2
1.5
1
Id, DRAIN CURRENT (A)
0.5
0
2.5 3 3.5 4 4.5 5
Vgs, GATE-SOURCE VOL T AGE (V)
VDS= 10 V
Figure 4. Gate-source voltage vs
1.04
1.02
0.98
0.96
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
case temperature
ID= 3A
D
I
= 1A
ID= .25 A
ID= 2A
ID= 1.5 A
1
VDS= 10 V
-25 0 25 50 75
Tc, CASE TEMPERATURE (°C)
PD55015
Figure 5. Output power vs input power Figure 6. Power gain vs output power
18
16
14
12
10
480 MHz
500 MHz
520 MHz
8
6
4
Pout, OUTP U T POWER (W)
2
VDD= 12..5 V
I
DQ
= 150 mA
0
0 0.2 0.4 0.6 0.8 1
Pin, INPUT POWER (W)
6/27
18
16
14
12
Gp, POWER GAIN (dB)
10
0 2 4 6 8 1012141618
Pout, OUTPUT POWER (W)
480 MHz
500 MHz
520 MHz
Vdd = 12.5 V
Idq = 150 mA
PD55015-E, PD55015S-E Typical performance
Figure 7. Drain efficiency vs.
60
50
40
30
20
Nd, DRAIN EFFICIE NCY (%)
10
output power
480 MHz
500 MHz
0
0 2 4 6 8 10 12 14 16 18
Pout, OUTPUT POWER (W)
520 MHz
Vdd = 12.5 V
Idq = 150 mA
Figure 9. Output power vs.
Pout, OUTPUT POWER (W)
bias current
22
20
18
16
14
12
0 200 400 600 800 1000
480 MHz
500 MHz
Idq, BIAS CURRENT (mA)
520 MHz
Pin = .7 W
Vdd = 12.5 V
Figure 8. Input return loss vs. output power
0
-10
-20
-30
Rtl, RETURN LOSS (dB)
-40
0 2 4 6 8 10 12 14 16 18
500 MHz
480 MHz
520 MHz
Vdd = 12.5 V
Idq = 150 mA
Pout, OUTPUT POWER (W)
Figure 10. Drain efficiency vs. bias current
70
60
520 MHz
50
40
Nd, DRAIN EFFICIE NCY (%)
30
0 200 400 600 800 1000
480 MHz
500 MHz
Idq, BIAS CURRENT (mA)
Pin = .7 W
Vdd = 12.5 V
Figure 11. Output power vs.
25
20
15
10
Pout, OUTPUT POWER (W)
drain voltage
480 MHz
5
0
7 8 9 1011121314151617
VDS, DRAIN-SOURCE VOLTAGE (V)
500 MHz
520 MHz
Idq = 150mA
Pin = .7 W
Figure 12. Drain efficiency vs. drain voltage
70
520 MHz
480 MHz
IDQ= 150mA
Pin = .7 W
60
500 MHz
50
40
Nd, DRAIN EFFICIE NCY (% )
30
7 8 9 1011121314151617
VDS, DRAIN-SOURCE VOLTAGE (V)
7/27
Typical performance PD55015-E, PD55015S-E
Figure 13. Output power vs gate bias voltage
20
15
10
5
Pout, OUTPUT POWER (W)
0
0 0.5 1 1.5 2 2.5 3 3.5
480 MHz
VGS, GATE BIAS VOLTAGE (V)
500 MHz
520 MHz
VDD= 12.5 V
Pin = .7 W
PD55015S
Figure 14. Output power vs.
18
16
14
12
10
8
6
4
Pout, OUTPUT POWER (W)
2
0
input power
480 MHz
500 MHz
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Pin, INPUT POWER (W)
520 MHz
VDD= 12..5 V
DQ
= 150 mA
I
Figure 15. Power gain vs.
output power
18
16
14
12
Gp, POWER GAIN (dB )
10
480 MHz
500 MHz
0 2 4 6 8 1012141618
Pout, OUTPUT POWER (W)
520 MHz
Vdd = 12.5 V
Idq = 150 mA
8/27
PD55015-E, PD55015S-E Typical performance
Figure 16. Drain efficiency vs.
60
50
40
30
20
Nd, DRAIN EFFI CIE NC Y (%)
10
0
0 2 4 6 8 1012141618
output power
Pout, OUTPUT POWER (W)
520 MHz
500 MHz
480 MHz
Vdd = 12.5 V
Idq = 150 mA
Figure 17. Return loss vs. output power
0
-10
-20
-30
Rtl, RETURN LOS S (dB)
-40
0 2 4 6 8 1012141618
480 MHz
520 MHz
Pout, OUTPUT POWER (W)
500 MHz
Vdd = 12.5 V
Idq = 150 mA
PD55015S
Figure 18. Output power vs.
22
20
18
16
14
Pout, OUTPUT POWE R (W)
12
bias current
480 MHz
500 MHz
520 MHz
Pin = .5 W
Vdd = 12.5 V
0 200 400 6 00 800 1000
Idq, BIAS CURRENT (mA)
Figure 19. Drain efficiency vs. bias current
70
60
50
40
Nd, DRAIN EFFICIENCY (%)
30
0 200 400 600 800 1000
500 MHz
520 MHz
Idq, B IAS CURRENT (mA)
480 MHz
Pin = .5 W
Vdd = 12.5 V
9/27
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