The PD55008L-E is a common source N-channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12V in common source mode at
frequencies up to 1GHz.
= 8W with 17dB gain @ 500MHz / 12.5V
OUT
directive
PD55008L-E
PowerFLAT™(5x5)
Pin conn ection
PD55008L-E boasts the excellent gain, linearity
and reliability of STH1L V latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT™. PD55008LE’s superior linearity performance makes it an
ideal solution for car mobile radio.
Drain-source voltage40V
Gate-source voltage -0.5 to +15V
Drain current5A
Power dissipati on (@ TC = 70°C)19.5W
Max. operating junction temperature150°C
St orage temperature-65 to +150°C
= 10 V ID = 0.5 A0.130.14V
VDS = 10 V ID = 1.5 A1.6mho
VGS = 0 VVDS = 12.5 V f = 1 MHz53pF
VGS = 0 VVDS = 12.5 V f = 1 MHz38pF
VGS = 0 VVDS = 12.5 V f = 1 MHz3.2pF
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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