N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration
■ P
■ New RF plastic package
Description
= 8W with 17dB gain @ 500MHz / 12.5V
OUT
PD55008-E
PD55008S-E
RF POWER transistor, LDMOST plastic family
PowerSO-10RF
(formed lead)
The PD55008 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies up to 1 GHz.
PD55008 boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology
mounted in the first true SMD plastic RF power
package, PowerSO-10RF. PD55008’s superior
linearity performance makes it an ideal solution
for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high r elia bility, is the first ST JEDE C
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of
assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
PowerSO-10RF
(straight lead)
Pin conn ection
Gate
Source
Drain
Order codes
Part number Package Packing
PD55008-E PowerSO-10RF (formed lead) Tube
PD55008S-E PowerSO-10RF (straight lead) Tube
PD55008TR-E PowerSO-10RF (formed lead) Tape and reel
PD55008STR-E PowerSO-10RF (straight lead) Tape and reel
April 200 6 Rev 1 1/28
www.st.com
28
Contents PD55008-E, PD55008S-E
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7.1 PD55008 (VDS = 12.5V IDS = 150mA) . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7.2 PD55008 (VDS = 12.5V IDS = 800mA) . . . . . . . . . . . . . . . . . . . . . . . . . . 17
7.3 PD55008 (VDS = 12.5V IDS = 1.5A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
7.4 PD55008S (VDS = 12.5V IDS = 150mA) . . . . . . . . . . . . . . . . . . . . . . . . . 19
7.5 PD55008S (VDS = 12.5V IDS = 800mA) . . . . . . . . . . . . . . . . . . . . . . . . . 20
7.6 PD55008S (VDS = 12.5V IDS = 1.5A) . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
8 Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
2/28
PD55008-E, PD55008S-E Electrical data
1 Electrical data
1.1 Maximum ratings
Table 1. Absolute maximum ratings (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
T
J
T
STG
1.2 Thermal data
Table 2. Thermal data
Symbol Parameter Value Unit
R
thJC
= 25°C)
CASE
Drain-source voltage 40 V
Gate-source voltage ± 20 V
Drain current 4 A
Power dissipati on (@ TC = 70°C) 52.8 W
Max. operating junction temperature 165 °C
St orage temperature -65 to +150 °C
Junction - case thermal resistance 1.8 °C/W
3/28
Electrical Characteristics PD55008-E, PD55008S-E
2 Electrical Characteristics
T
= +25 oC
CASE
2.1 Static
Table 3. Static
Symbol Test conditions Min. Typ. Max. Unit
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)VGS
g
FS
C
ISS
C
OSS
C
RSS
2.2 Dynamic
Table 4. Dynamic
Symbol Test conditions Min. Typ. Max. Unit
P
OUT
G
P
n
D
Load
mismatch
VGS = 0V VDS = 28V 1 µA
VGS = 20V VDS = 0V 1 µA
VDS = 10V
= 150mA 2.0 5.0 V
ID
= 10V ID = 1.5A 0.67 V
VDS = 10V ID = 1.5A 1.6 mho
VGS = 0V VDS = 12.5V f = 1MHz 58 pF
VGS = 0V VDS = 12.5V f = 1MHz 38 pF
VGS = 0V VDS = 12.5V f = 1MHz 2.8 pF
VDD = 12.5V, IDQ = 150mA f = 500MHz 8 W
VDD = 12.5V, IDQ = 150mA, P
VDD = 12.5V, IDQ = 150mA, P
V
= 15.5V, IDQ = 150mA, P
DD
All phase angles
= 8W, f = 500MHz 15 17 dB
OUT
= 8W, f = 500MHz 50 55 %
OUT
= 8W, f = 500MHz
OUT
20:1 VSWR
4/28
PD55008-E, PD55008S-E Impedance
3 Impedance
Figure 1. Current conventions
Table 5. Impedance data
PD55008 PD55008S
Freq. (MHz) ZIN (Ω) Z DL(Ω )F r e q . ( M H z )Z
480 1.141 - j 2.054 1.649 + j 2.916 480 1.075 - j 2.727 2.046 + j 1.960
500 1.589 - j 1.185 1.561 + j 2.639 500 1.409 - j 3.448 2.129 + j 3.219
520 1.649 - j 1.965 1.716 + j 1.552 520 1.586 - j 2.087 3.082 + j 2.043
800 1.05 + j 0.54 2.62 - j 1.91
850 1.50 + j 1.00 2.26 - j 1.54
900 1.95 + j 2.28 2.70 - j 1.90
(Ω )Z
IN
DL
(Ω )
5/28
Typical performance PD55008-E, PD55008S-E
4 Typical performance
Figure 2. Capacitance vs. drain voltage Figure 3. Drain current vs. gate-source
voltage
1000
f=1 MHz
100
10
Coss
C, CAPACITANCES (pF)
1
0 5 10 15 20 2
Crss
VDD, DRAIN VOLT AGE (V)
Figure 4. Gate-source voltage vs. case
temperature
1.06
1.04
1.02
Ciss
4
3
2
1
Id, DRAIN CURRENT (A)
0
12345
VGS, G ATE-SOURCE VOLTAGE (V )
Vds = 10 V
1
0.98
0.96
0.94
VGS, GATE-SOURCE VOLTAGE(NORMALIZED)
0.92
VDS= 10 V
-25 0 25 50 75 10
Tc, CASE TEMPERATURE (°C)
ID= .5A
=
I
D
ID= 2A
ID= 1.5A
ID= 1A
.25A
6/28
PD55008-E, PD55008S-E Typical performance
PD55008
Figure 5. Output power vs. input power Figure 6. Power gain vs. output power
14
12
480 MHz
10
520 MHz
500 MHz
8
6
4
2
Pout, OUTPUT P OWER (W)
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.
VDD= 12.5 V
= 150 mA
I
DQ
Pin, INPUT POWER (W)
Figure 7. Drain efficiency vs. output power Figure 8. Input return loss vs. output power
22
20
18
16
14
12
10
Pg, POWER GAIN (dB)
8
6
024681 01 2
VDD= 12.5 V
I
= 150 mA
DQ
520 MHz
80
70
60
50
520 MHz
500 MHz
480 MHz
40
0
-10
-20
480 MHz
500 MHz
Pout, OUTPUT POWER (W )
500 MHz
480 MHz
30
20
10
Nd, DRAIN EFFICIE NCY (%)
0
024681 01 2
VDD= 12.5 V
= 150 mA
I
DQ
Pout, OUTPUT POWER (W)
-30
VDD= 12.5 V
I
= 150 mA
DQ
Rtl, INPUT RETURN LOSS (dB )
-40
024681 01
520 MH z
Pout, OUTPUT POWER (W)
7/28
Typical performance PD55008-E, PD55008S-E
PD55008
Figure 9. Output power vs. bias current Figure 10. Drain efficiency vs. bias current
12
10
8
500 MHz
6
480 MHz
520 MHz
4
2
Pout, OUTPUT P O WER (W)
0
0 100 200 300 400 500 600 700 800
VDD= 12.5 V
Pin= 21.7 dBm
IDQ, BIAS CURRENT (mA)
Figure 11. Output power vs. supply voltage Figure 12. Drain efficiency vs. supply voltage
70
60
50
40
30
20
Nd, DRAIN EFFICIENCY (%)
10
0 100 200 300 400 500 600 700 800
480 MHz
13
12
11
10
9
8
7
6
5
Pout, OUTPUT POWER (W)
4
3
9 1 01 11 21 31 41 5
500 MHz
VDD, SUPPLY VOLTAGE (V)
480 MHz
520 MHz
Idq= 150 mA
Pin= 21.7 dB m
70
60
50
40
30
Nd, DRAIN EFFICIENCY (%)
20
9 1 01 11 21 31 41 5
VDD, SUPPLY VOLTAGE (V)
520 MHz
IDQ, BIAS CURRENT (mA)
480 MHz
500 MHz
VDD= 12.5 V
Pin= 21.7 dBm
500 MHz
520 MHz
Idq= 150 mA
Pin= 21.7 dBm
8/28
PD55008-E, PD55008S-E Typical performance
PD55008
Figure 13. Output power vs. gate-source
voltage
Table 6. Output power vs. input power
10
12
10
8
6
4
2
Pout, OUTPUT POWER (W)
0
01234
Figure 14. Drain efficiecy vs. output power Figure 15. Input return loss vs. output power
60
VGS, GATE-SOURCE VOLTAGE (V)
500 MHz
50
40
30
Drain efficiency (%)
20
10
123456789
Output Power (W)
850 MHz
800 MHz
480 MHz
520 MHz
VDD= 12.5 V
Pin= 21.7 dBm
900 MHz
Vdd = 12.5V
Idq = 250mA
8
6
4
Output Power (W)
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6
0
-5
-10
-15
-20
Input Return Loss (dB)
800 MHz
900 MHz
850 MHz
-25
-30
0123456789
800 MHz
Input Power (W)
Output Power (W)
850 MHz
900 MHz
Vdd = 12.5V
Idq = 250mA
Vdd = 12.5V
Idq = 250mA
9/28
Typical performance PD55008-E, PD55008S-E
PD55008S
Figure 16. Output po we r vs. in put po we r Figure 17. Power gain vs . ou t put power
14
12
480 MHz
10
500 MHz
520 MHz
8
6
4
Pout, OUTPUT POWER (W)
2
0
0 0.1 0.2 0.3 0.4 0.5
VDD= 12.5 V
I
DQ
= 150 mA
Pin, INPUT POWER (W)
Figure 18. Drain efficiency vs. output power Figure 19. Input return loss vs. output power
22
20
18
16
520 MHz
500 MHz
14
12
10
Pg, POWER GAIN (dB)
8
6
024681 01 2
80
70
520 MHz
60
50
40
500 MHz
480 MHz
-10
-20
0
520 MHz
480 MHz
Pout, OUTPUT POWER (W)
500 MHz
480 MHz
VDD= 12.5 V
I
DQ
= 150 mA
30
20
Nd, DRAIN EFFICIENCY (%)
10
0
024681 01 2
VDD= 12.5 V
I
DQ
= 150 mA
Pout, OUTPUT POWER (W)
-30
Rtl, INPUT RETURN LOSS (dB)
-40
024681 01 2
VDD= 12.5 V
DQ
= 150 mA
I
Pout, OUTPUT POWER (W)
10/28
PD55008-E, PD55008S-E Typical performance
PD55008S
Figure 20. Output power vs. bias current Figure 21. Drain efficiency vs. bias current
12
10
480 MHz
8
6
4
2
Pout, OUTPUT POWER (W)
0
0 100 200 300 400 500 600 700 800
Figure 22. Output power vs. supply voltage Figure 23. Drain efficiency vs. supply voltage
13
12
11
10
9
8
7
6
5
Pout, OUTPUT POWER (W)
4
3
91 01 11 21 31 41 5
520 MHz
520 MHz
500 MHz
IDQ, BIAS CURRENT (mA)
480 MHz
500 MHz
VDD, SUPPLY VOLTAGE (V)
VDD= 12.5 V
Pin= 21 dBm
520 MHz
Idq= 150 mA
Pin= 21 dBm
70
60
50
40
520 MHz
500 MHz
480 MHz
30
20
Nd, DRAIN EFFICIENCY (%)
10
0 100 200 300 400 500 600 700 800
VDD= 12.5 V
Pin = 21 dBm
IDQ, BIAS CURRENT (mA)
70
60
50
40
30
Nd, DRAIN EFFICIENCY (%)
20
91 01 11 21 31 41 5
480 MHz
VDD, SUPPLY VOLTAGE (V)
500 MHz
520 MHz
Idq= 150 mA
Pin= 21 dBm
11/28
Typical performance PD55008-E, PD55008S-E
PD55008S
Figure 24. Output power vs. supply voltage
12
10
8
6
4
2
Pout, OUTPUT POWER (W)
0
01234
VGS, GATE-SOURCE VO LTA GE (V)
480 MHz 500 MHz
520 MHz
VDD= 12.5 V
Pin= 21 dBm
12/28
PD55008-E, PD55008S-E Test circuit
5 Test circuit
Figure 25. Test circuit schematic
Table 7. Test circuit component part list
Component Description
B1, B2 SHORT FERRITE BEAD, FAIR RITE PRODUCTS (2743021446)
C1, C12 240 pF, 100 mil CHIP CAPACITOR
C2,C3,C10,C11 0 TO 20 pF, TRIMMER CAPACITOR
C4 82 pF, 100 mil CHIP CAPACITOR
C5,C16 120 pF, 100 mil CHIP CAPACITOR
C6,C13 10 µ F, 50 V ELECTROLYTIC CAPACITOR
C7, C14 1.200 pF, 100 mil CHIP CAPACITOR
C8,C15 0.1 F, 100 mil CHIP CAPACITOR
C9 30 pF, 100 mil CHIP CAPACITOR
L1 55.5 nH, TURN, COILCRAFT
N1, N2 TYPE N FLANGE MOUNT
R1 15 Ω , 0805 CHIP RESISTOR
R2 51 Ω , 1/2 W RESISTOR
R3 10 Ω , 0805 CHIP RESISTOR
R4 33 kΩ, 1/8 Ω RESISTOR
13/28
Test circuit PD55008-E, PD55008S-E
Table 7. Test circuit component part list
Component Description
Z1 0.451” X 0.080” MICROSTRIP
Z2 1.005” X 0.080” MICROSTRIP
Z3 0.020” X 0.080” MICROSTRIP
Z4 0.155” X 0.080” MICROSTRIP
Z5,Z6 0.260” X 0.233” MICROSTRIP
Z7 0.065” X 0.080” MICROSTRIP
Z8 0.266” X 0.080” MICROSTRIP
Z9 1.113” X 0.080” MICROSTRIP
Z10 0.433” X 0.080” MICROSTRIP
BOARD ROGER UL TRA LAM 200 0 THK 0.030”
ε
= 2.55 2oz ED Cu BOTH SIDES
r
14/28
PD55008-E, PD55008S-E Circuit layout
6 Circuit layout
Figure 26. Test fixture component layout
Figure 27. Test circuit photomaster
15/28
Common source s-parameter PD55008-E, PD55008S-E
7 Common source s-parameter
7.1 PD55008 (V DS = 12.5V IDS = 150mA)
Table 8. S-parameter
FREQ
(MHz)
50 0.781 -141 16.89 93 0.035 4 0.685 -137
100 0.784 -157 8.14 77 0.035 -11 0.681 -151
150 0.803 -162 5.19 67 0.032 -18 0.704 -157
200 0.830 -165 3.69 58 0.030 -26 0.743 -159
250 0.852 -167 2.77 50 0.027 -34 0.773 -161
300 0.873 -169 2.16 44 0.025 -39 0.812 -164
350 0.892 -171 1.72 37 0.022 -43 0.844 -166
400 0.906 -172 1.40 33 0.020 -45 0.862 -168
450 0.919 -173 1.16 28 0.017 -47 0.888 -170
500 0.928 -175 0.97 24 0.015 -51 0.903 -171
550 0.936 -176 0.83 20 0.012 -52 0.913 -173
600 0.941 -177 0.71 17 0.010 -50 0.921 -174
650 0.946 -178 0.62 14 0.010 -52 0.926 -176
700 0.952 -179 0.55 11 0.008 -47 0.934 -177
750 0.954 180 0.48 9 0.006 -48 0.937 -178
800 0.957 179 0.44 7 0.006 -40 0.940 -180
850 0.959 178 0.39 4 0.00 4 -3 0 0.950 179
900 0.960 177 0.35 3 0.005 -1 0.952 178
950 0.963 176 0.32 1 0.004 17 0.957 177
1000 0.964 176 0. 29 -1 0.004 28 0.958 176
1050 0.964 175 0. 27 -3 0.004 43 0.953 175
1100 0.966 174 0. 25 -4 0.005 42 0.955 174
1150 0.963 173 0. 23 -6 0.005 59 0.954 173
1200 0.964 174 0. 21 -8 0.007 58 0.952 172
1250 0.962 172 0. 20 -9 0.008 57 0.956 171
1300 0.961 172 0. 18 -1 1 0. 008 57 0.953 171
1350 0.960 171 0. 17 -1 1 0. 010 68 0.950 170
1400 0.957 170 0. 16 -1 2 0. 010 61 0.957 169
1450 0.957 169 0. 15 -1 2 0. 011 67 0.942 168
1500 0.952 169 0. 14 -1 3 0. 011 76 0.944 167
IS11II S
∠Φ
II S
21
∠Φ
IS
12
∠Φ
12
IS
IS
22
∠Φ
22
16/28
PD55008-E, PD55008S-E Common source s-parameter
7.2 PD55008 (V DS = 12.5V IDS = 800mA)
Table 9. S-parameter
FREQ
IS11IS
∠Φ
11
IS
IS
21
(MHz)
50 0.832 -156 20.68 90 0.022 3 0.740 -157
100 0.833 -167 9.98 80 0.022 -6 0.734 -165
150 0.839 -171 6.51 73 0.020 -11 0.741 -169
200 0.851 -172 4.78 67 0.020 -16 0.756 -169
250 0.851 -174 3.71 60 0.018 -20 0.767 -170
300 0.861 -174 3.00 55 0.017 -22 0.791 -172
350 0.872 -175 2.46 49 0.016 -23 0.813 -172
400 0.883 -176 2.06 44 0.014 -26 0.828 -173
450 0.894 -177 1.75 40 0.014 -26 0.849 -174
500 0.902 -178 1.50 35 0.012 -26 0.863 -175
550 0.910 -179 1.30 31 0.011 -27 0.874 -176
600 0.919 -179 1.14 28 0.010 -29 0.886 -177
650 0.923 180 1.01 25 0.009 -25 0.890 -178
700 0.929 179 0.90 22 0.008 -20 0.898 -179
750 0.934 178 0.81 19 0.007 -10 0.905 -180
800 0.937 177 0.73 16 0.006 -3 0.908 179
850 0.939 177 0.66 13 0.005 11 0.925 178
900 0.942 176 0.60 11 0.005 17 0.926 177
950 0.944 175 0.55 9 0.00 6 20 0.929 176
1000 0.949 175 0.51 6 0.006 25 0.935 176
1050 0.952 174 0.47 4 0.008 35 0.933 174
1100 0.954 173 0.43 2 0.007 38 0.935 173
1150 0.952 173 0.40 0 0.009 48 0.936 173
1200 0.954 172 0.37 -2 0.009 50 0.936 172
1250 0.951 171 0.34 -4 0.010 53 0.937 171
1300 0.950 171 0.32 -5 0.011 51 0.935 170
1350 0.951 170 0.30 -6 0.011 60 0.935 169
1400 0.948 170 0.28 -8 0.012 56 0.939 169
1450 0.947 169 0.27 -9 0.012 64 0.928 168
1500 0.944 168 0.25 -9 0.013 67 0.933 166
∠Φ
21
IS
IS
12
∠Φ
12
IS
IS
22
∠Φ
22
17/28
Common source s-parameter PD55008-E, PD55008S-E
7.3 PD55008 (V DS = 12.5V IDS = 1.5A)
Table 10. S-parameter
IS11IS11∠Φ IS21IS21∠Φ IS12IS12∠Φ IS22IS
(MHz)
50 0.797 -161 20.72 90 0.020 2 0.743 -159
100 0 .824 -168 10 .01 80 0.019 -5 0.741 -167
150 0.849 -171 6.54 74 0.019 -9 0.746 -170
200 0.861 -173 4.83 67 0.018 -14 0.759 -171
250 0.870 -175 3.76 61 0.017 -19 0.770 -171
300 0.879 -175 3.04 56 0.016 -20 0.791 -173
350 0.887 -176 2.51 50 0.015 -21 0.811 -173
400 0.897 -177 2.11 45 0.013 -26 0.824 -174
450 0.905 -178 1.80 41 0.013 -23 0.847 -175
500 0.911 -178 1.54 37 0.011 -21 0.858 -175
550 0.917 -179 1.35 33 0.010 -23 0.871 -176
600 0.924 -180 1.17 29 0.009 -21 0.881 -177
650 0.927 179 1.04 26 0.009 -16 0.887 -178
700 0 .933 179 0.93 23 0.007 -8 0.899 -179
750 0 .937 178 0.83 20 0.007 -3 0.901 180
800 0 .940 177 0.76 17 0.006 -2 0.906 179
850 0.941 177 0.68 14 0.007 0 0.918 178
900 0 .944 176 0.63 12 0.006 21 0.920 177
950 0 .946 175 0.58 10 0.008 17 0.927 176
1000 0.948 174 0.53 7 0.007 43 0.929 175
1050 0.952 174 0.49 5 0.008 44 0.929 175
1100 0.953 173 0.45 3 0.008 44 0.930 173
1150 0.952 172 0.42 1 0.009 47 0.931 173
1200 0.951 172 0.39 -1 0.010 51 0.928 172
1250 0.952 171 0.36 -3 0.010 51 0.932 171
1300 0.952 171 0.34 -5 0.011 52 0.931 170
1350 0.949 170 0.31 -7 0.011 53 0.931 169
1400 0.947 169 0.29 8 0.011 58 0.937 169
1450 0.945 169 0.28 -9 0.012 60 0.926 168
1500 0.942 168 0.26 -9 0.012 64 0.927 166
∠Φ
22
18/28
PD55008-E, PD55008S-E Common source s-parameter
7.4 PD55008S (V DS = 12.5V IDS = 150mA)
Table 11. S-parameter
IS11II S
∠Φ
(MHz)
50 0.753 -146 15.56 92 0.036 4 0.666 -144
100 0.781 -159 7.52 78 0.036 -9 0.684 -157
150 0.812 -163 4.83 70 0.033 -17 0.717 -161
200 0.834 -166 3.46 62 0.032 -25 0.747 -162
250 0.856 -168 2.63 54 0.029 -31 0.784 -164
300 0.873 -169 2.07 48 0.028 -37 0.814 -165
350 0.887 -170 1.66 42 0.025 -42 0.836 -166
400 0.902 -172 1.37 37 0.023 -45 0.859 -168
450 0.915 -173 1.14 33 0.021 -48 0.873 -169
500 0.925 -174 0.96 29 0.019 -52 0.890 -171
550 0.935 -175 0.83 25 0.017 -56 0.906 -171
600 0.942 -176 0.71 22 0.015 -55 0.911 -173
650 0.946 -176 0.63 19 0.014 -56 0.922 -174
700 0.950 -177 0.55 16 0.013 -60 0.933 -175
750 0.956 -178 0.49 14 0.012 -58 0.936 -176
800 0.959 -179 0.44 12 0.010 -67 0.942 -177
850 0.964 -180 0.40 9 0.008 -66 0.942 -178
900 0.961 180 0.36 7 0.008 -65 0.947 -179
950 0.965 179 0.33 5 0.005 -62 0.954 -179
1000 0.967 178 0.30 3 0.006 -67 0.957 180
1050 0.970 178 0.27 2 0.004 -66 0.960 179
1100 0.970 177 0.25 0 0.004 -43 0.958 178
1150 0.970 177 0.23 -2 0.003 -42 0.963 178
1200 0.971 176 0.22 -3 0.002 -58 0.961 177
1250 0.973 175 0.20 -5 0.001 -13 0.960 177
1300 0.969 175 0.19 -6 0.001 31 0.956 176
1350 0.971 174 0.18 -7 0.002 60 0.959 175
1400 0.969 174 0.16 -7 0.001 67 0.957 175
1450 0.969 173 0.15 -8 0.003 79 0.965 174
1500 0.968 173 0.14 -9 0.004 125 0.965 174
II S
21
∠Φ
IS12∠Φ IS22IS
12
∠Φ
22
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Common source s-parameter PD55008-E, PD55008S-E
7.5 PD55008S (V DS = 12.5V IDS = 800mA)
Table 12. S-parameter
FREQ
(MHz)
50 0.862 -157 18.51 90 0.021 7 0.765 -161
100 0.861 -168 8.97 81 0.021 -4 0.767 -170
150 0.869 -171 5.88 76 0.020 -10 0.778 -172
200 0.872 -173 4.33 70 0.019 -14 0.782 -172
250 0.879 -174 3.40 65 0.019 -18 0.801 -173
300 0.888 -175 2.77 60 0.018 -20 0.810 -173
350 0.894 -175 2.30 55 0.017 -26 0.823 -173
400 0.905 -176 1.96 50 0.016 -31 0.836 -173
450 0.910 -177 1.67 46 0.015 -33 0.846 -174
500 0.916 -177 1.44 42 0.014 -31 0.862 -175
550 0.926 -178 1.27 38 0.013 -32 0.873 -175
600 0.930 -178 1.11 35 0.012 -37 0.880 -176
650 0.934 -179 0.96 32 0.011 -39 0.892 -176
700 0.938 -179 0.89 29 0.010 -38 0.901 -177
750 0.944 180 0.80 26 0.009 -38 0.907 -178
800 0.947 179 0.73 24 0.008 -38 0.913 -178
850 0.951 179 0.66 21 0.007 -36 0.914 -179
900 0.952 178 0.60 18 0.005 -44 0.920 180
950 0.953 178 0.55 16 0.005 -36 0.929 179
1000 0.955 177 0.51 14 0.005 -22 0.932 179
1050 0.957 176 0.48 11 0.004 -19 0.937 178
1100 0.960 176 0.44 9 0.003 -3 0.937 178
1150 0.961 176 0.41 7 0.004 2 0.943 177
1200 0.962 175 0.38 5 0.004 -4 0.940 177
1250 0.964 175 0.35 4 0.002 1 0.939 176
1300 0.961 174 0.33 2 0.003 31 0.937 176
1350 0.961 174 0.31 1 0.004 47 0.940 175
1400 0.959 173 0.29 1 0.003 56 0.939 174
1450 0.961 173 0.27 -1 0.004 59 0.945 173
1500 0.962 172 0.26 -2 0.004 87 0.946 173
IS11IS11∠Φ IS21IS21∠Φ IS12IS12∠Φ IS22IS
∠Φ
22
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PD55008-E, PD55008S-E Common source s-parameter
7.6 PD55008S (VDS = 12.5V IDS = 1.5A)
Table 13. S-parameter
FREQ
(MHz)
50 0.821 -162 18.74 90 0.002 2 0.771 -163
100 0.849 -169 9.09 82 0.019 -5 0.776 -171
150 0.875 -171 5.97 77 0.018 -10 0.785 -173
200 0.885 -173 4.41 71 0.017 -12 0.789 -173
250 0.892 -175 3.47 66 0.017 17 0.807 -174
300 0.895 -175 2.84 61 0.016 -19 0.915 -174
350 0.901 -176 2.37 56 0.015 -22 0.924 -174
400 0.909 -177 2.02 52 0.014 -26 0.839 -174
450 0.914 -177 1.74 48 0.013 -28 0.844 -175
500 0.920 -178 1.50 43 0.013 -30 0.859 -176
550 0.928 -178 1.32 40 0.012 -28 0.871 -176
600 0.932 -179 1.17 37 0.011 -34 0.877 -176
650 0.935 -179 1.04 33 0.010 -31 0.887 -177
700 0.939 -180 0.93 30 0.009 -29 0.895 -177
750 0.946 179 0.84 28 0.008 -28 0.901 -178
800 0.946 179 0.77 25 0.008 -31 0.908 -179
850 0.953 178 0.70 22 0.007 -31 0.908 -179
900 0.952 178 0.64 19 0.006 -27 0.916 180
950 0.950 177 0.59 18 0.006 -33 0.924 179
1000 0.954 177 0.55 15 0.005 -21 0.928 178
1050 0.957 176 0.50 3 0.005 -20 0.930 178
1100 0.959 176 0.47 11 0.004 4 0.933 178
1150 0.959 175 0.44 8 0.004 13 0.937 177
1200 0.961 175 0.41 7 0.004 30 0.937 177
1250 0.962 174 0.38 5 0.003 29 0.935 176
1300 0.961 174 0.35 3 0.004 35 0.935 175
1350 0.961 174 0.33 2 0.004 55 0.935 174
1400 0.959 173 0.31 1 0.005 62 0.934 174
1450 0.960 172 0.29 0 0.005 65 0.942 173
1500 0.960 172 0.27 -1 0.005 81 0.942 173
IS11IS11∠Φ IS21IS21∠Φ IS12IS12∠Φ IS22IS
∠Φ
22
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Mechanical data PD55008-E, PD55008S-E
8 Mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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PD55008-E, PD55008S-E Mechanical data
Table 14. PowerSO-10RF Formed lead (Gull Wing) Mechanical data
Dim. mm. Inch
Min. Typ. Max. Min. Typ. Max.
A1 0 0.05 0.1 0. 0.0019 0.0038
A2 3.4 3.5 3.6 0.134 0.137 0.142
A3 1.2 1.3 1.4 0.046 0.05 0.054
A4 0.15 0.2 0.25 0.005 0.007 0.009
a 0.2 0.007
b 5.4 5.53 5.65 0.212 0.217 0.221
c 0.23 0.27 0.32 0.008 0.01 0.012
D 9.4 9.5 9.6 0.370 0.374 0.377
D1 7.4 7.5 7.6 0.290 0.295 0.298
E 13.85 14.1 14.35 0.544 0.555 0.565
E1 9.3 9.4 9.5 0.365 0.37 0.375
E2 7.3 7.4 7.5 0.286 0.292 0.294
E3 5.9 6.1 6.3 0.231 0.24 0.247
F 0.5 0.019
G 1.2 0.047
L 0.8 1 1.1 0.030 0.039 0.042
R1 0.25 0.01
R2 0.8 0.031
T 2 deg 5 deg 8 deg 2 deg 5 deg 8 deg
T1 6 deg 6 deg
T2 10 deg 10 deg
Note: Resin protrusions not included (max value: 0.15 mm per side)
Figure 28. Package dimensions
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Critical dimensions:
- Stand-off (A1)
- Overall width (L)
Mechanical data PD55008-E, PD55008S-E
Table 15. PowerSO-10RF Straight Lead Mechanical data
Dim. mm. Inch
Min. Typ. Max. Min. Typ. Max.
A1 1.62 1.67 1.72 0.064 0.065 0.068
A2 3.4 3.5 3.6 0.134 0.137 0.142
A3 1.2 1.3 1.4 0.046 0.05 0.054
A4 0.15 0.2 0.25 0.005 0.007 0.009
a 0.2 0.007
b 5.4 5.53 5.65 0.212 0.217 0.221
c 0.23 0.27 0.32 0.008 0.01 0.012
D 9.4 9.5 9.6 0.370 0.374 0.377
D1 7.4 7.5 7.6 0.290 0.295 0.298
E 15.15 15.4 15.65 0.595 0.606 0.615
E1 9.3 9.4 9.5 0.365 0.37 0.375
E2 7.3 7.4 7.5 0.286 0.292 0.294
E3 5.9 6.1 6.3 0.231 0.24 0.247
F 0.5 0.019
G 1.2 0.047
R1 0.25 0.01
R2 0.8 0.031
T1 6 deg 6 deg
T2 10 deg 10 deg
Note: Resin protrusions not included (max value: 0.15 mm per side)
Figure 29. Package dimensions
CRITICAL DIMENSIONS:
- Overall width (L)
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PD55008-E, PD55008S-E Mechanical data
Figure 30. Tube information
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Mechanical data PD55008-E, PD55008S-E
Figure 31. Reel information
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PD55008-E, PD55008S-E Revision history
9 Revision history
Table 16. Revision history
Date Revision Changes
07-Apr-2006 1 Initial release.
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PD55008-E, PD55008S-E
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