STMicroelectronics M74HC368 Technical data

M74HC368

HEX BUS BUFFER

WITH 3 STATE OUTPUT INVERTING

■ HIGH SPEED:

t

= 9ns (TYP.) at VCC = 6V

PD

■ LOW POWER DISSIPATION:

I

= 4µA(MAX.) at TA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

= V

NIH

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 6mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ WIDE OPERATING VOLTAGE RANGE:

V

(OPR) = 2V to 6V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

= 28 % VCC (MIN.)

NIL

PHL

74 SERIES 368

DESCRIPTION

The M74HC368 is an high speed CMOS HEX BUS BUFFER 3-STATE OUTPUTS fabricated with silicon gate C

2

MOS technology. This device contains six buffers, four bu ffers are controlled by an enable input (G1

) and the other two buffers are controlled by the other enable input (G2

); the outputs of each bu ffer group are

TSSOPDIP SOP

ORDER CODES

PACKAGE TUBE T & R

DIP M74HC368B1R

SOP M74HC368M1R M74HC368RM13TR

TSSOP M74HC368TTR

enabled when G1

and/or G2 inputs are held low, and when held high, these outputs are disabled in a high-impedance state. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/10July 2001

M74HC368

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 15 G1

2, 4, 6, 10,

12, 14

3, 5, 7, 9, 1 1, 131Y

8 GND Ground (0V)

16 V

TRUTH TABLE

, G2 3 State Output Enable

1A to 6A Data Inputs

to 6Y Data Outputs

CC

INPUTS OUTPUTS

Input

Positive Supply Voltage

G

An Yn

LLH LHL

HXZ

X: Don’t Care Z: High Impedance

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

OK

I

or I

CC

P

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65

Supply Voltage

CC

DC Input Voltage -0.5 to VCC + 0.5

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current DC Output Current

O

DC VCC or Ground Current

GND

Power Dissipation

D

Storage Temperature

stg

Lead Temperature (10 sec)

L

; derate to 30 0m W by 10mW/°C from 65

°C

°C to 85°C

-0.5 to +7 V V V

± 20 mA ± 20 mA ± 35 mA ± 70 mA

500(*) mW

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

2/10

V

T

t

r

Supply Voltage

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time VCC = 2.0V

, t

f

V V

CC CC

= 4.5V = 6.0V

2 to 6 V

CC CC

-55 to 125 °C 0 to 1000 ns

0 to 500 ns 0 to 400 ns

V V

DC SPECIFICATIONS

Symbol Parameter

V

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current High Impedance

OZ

Output Leakage Current

Quiescent Supply

CC

Current

M74HC368

Test Condition Value

T

= 25°C

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

2.0 1.5 1.5 1.5

6.0 4.2 4.2 4.2

2.0 0.5 0.5 0.5

6.0 1.8 1.8 1.8

2.0

4.5

6.0

4.5

6.0

2.0

4.5

6.0

4.5

6.0

IO=-20 µA I

=-20 µA

O

I

=-20 µA

O

I

=-6.0 mA

O

I

=-7.8 mA

O

IO=20 µA I

=20 µA

O

I

=20 µA

O

I

=6.0 mA

O

I

=7.8 mA

O

= VCC or GND

V

I

= VIH or V

V

I

IL

VO = VCC or GND

= VCC or GND

V

I

1.9 2.0 1.9 1.9

4.4 4.5 4.4 4.4

5.9 6.0 5.9 5.9

4.18 4.31 4.13 4.10

5.68 5.8 5.63 5.60

0.0 0.1 0.1 0.1

0.17 0.26 0.33 0.40

0.18 0.26 0.33 0.40

-40 to 85°C -55 to 125°C

± 0.1 ± 1 ± 1 µA

± 0.5 ± 5 ± 10 µA

44080µA

Unit

V4.5 3.15 3.15 3.15

V4.5 1.35 1.35 1.35

V

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