STMicroelectronics M74HC257 Technical data

M74HC257

QUAD 2 CHANNEL MULTIPLEXER (3-STATE)

■ HIGH SPEED :

t

= 11 ns (TYP.) at VCC = 6V

PD

■ LOW POWER DISSIPATION:

I

=4µA(MAX.) at TA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

= V

NIH

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 6mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ WIDE OPERATING VOLTAGE RANGE:

V

(OPR) = 2V to 6V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

= 28 % VCC (MIN.)

NIL

PHL

74 SERIES 257

DESCRIPTION

The M74HC257 is an hi gh speed CM O S Q UA D 2
CHANNEL MULTIPLEXER (3-STATE) fabricated
with silicon gate C

2

MOS technology.
This IC is composed of an independent 2-channel
multiplexer with common SELECT and ENABLE
(OE

) input.

The M74HC257 is a non-inverting multiplexer.

TSSOPDIP SOP

ORDER CODES

PACKAGE TUBE T & R

DIP M74HC257B1R

SOP M74HC257M1R M74HC257RM13TR

TSSOP M74HC257TTR

When the ENABLE input is held "High", outputs of
the IC become in a High-Impedance state. If
SELECT input is held low, "A" data is selected,
when SELECT is high , "B" data is chosen.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/11August 2001

M74HC257

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1 SELECT

2, 5, 14, 11 1A to 4A Data Input From Source A
3, 6, 13, 10 1B to 4B Data Input From Source B

4, 7, 12, 9 1Y to 4Y

15 OE

8 GND Ground (0V)

16 Vcc Positive Supply Voltage

TRUTH TABLE

INPUTS OUTPUT

Common Data Select
Input

3 State Multiplexer
Outputs

3 State Output Enable
Inputs (Active Low)

OE

HXXXZ

LLLXL
LLHXH
LHXLL
LHXHH

X : Don’t Care
Z : High Impedance

LOGIC DIAGRAM

SELECT A B Y

This log i c diagram has not be used to esti m ate propagation delays

2/11

M74HC257

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

I

or I

CC

P

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V

V

T

t

r

Supply Voltage

CC

DC Input Voltage -0.5 to VCC + 0.5

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Power Dissipation

D

Storage Temperature

stg

Lead Temperature (10 sec)

L

°C; derate to 300mW by 10mW/°C from 65°C to 85°C

Supply Voltage

CC

Input Voltage 0 to V

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time VCC = 2.0V

, t

f

V
V

CC
CC

= 4.5V
= 6.0V

-0.5 to +7 V

± 20 mA
± 20 mA
± 35 mA
± 70 mA

500(*) mW

-65 to +150 °C

300 °C

2 to 6 V

CC
CC

-55 to 125 °C
0 to 1000 ns

0 to 500 ns
0 to 400 ns

V
V

V
V

3/11

M74HC257

DC SPECIFICATIONS

Symbol Parameter

V

V

V

V

I

I

High Level Input

IH

Voltage

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current
High Impedance

OZ

Output Leakage
Current

Quiescent Supply

CC

Current

Test Condition Value

V

(V)

CC

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

T

2.0 1.5 1.5 1.5

6.0 4.2 4.2 4.2

2.0 0.5 0.5 0.5

6.0 1.8 1.8 1.8

2.0

4.5

6.0

4.5

6.0

2.0

4.5

6.0

4.5

6.0

6.0

6.0

6.0

IO=-20 µA
I

=-20 µA

O

I

=-20 µA

O

I

=-6.0 mA

O

I

=-7.8 mA

O

IO=20 µA
I

=20 µA

O

I

=20 µA

O

I

=6.0 mA

O

I

=7.8 mA

O

= VCC or GND

V

I

= VIH or V

V

I

IL

VO = VCC or GND

= VCC or GND

V

I

1.9 2.0 1.9 1.9

4.4 4.5 4.4 4.4

5.9 6.0 5.9 5.9

4.18 4.31 4.13 4.10

5.68 5.8 5.63 5.60

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.17 0.26 0.33 0.40

0.18 0.26 0.33 0.40

± 0.1 ± 1 ± 1 µA

± 0.5 ± 5 ± 10 µA

44080µA

Unit

V4.5 3.15 3.15 3.15

V4.5 1.35 1.35 1.35

V

V

4/11