STMicroelectronics M48T58, M48T58Y User Manual

5.0V, 64 Kbit (8 Kb x8) TIMEKEEPER® SRAM

FEAT URES SUMMARY

INTEGRATED, ULT RA LOW POWER SRAM,
BYTEWIDE™ RAM-LIKE CLOCK ACCESS
BCD CODED YEAR, MONTH, DAY, DATE,
HOURS, MINUTES, AND SECONDS
FREQUENCY TEST OUTPUT FOR REAL
TIME CLOCK
AUTOMATIC POWER-FAIL CHIP
DESELECT AND WRITE PROTECT ION
WRITE PROTECT VOLTAGES
= Power-fail Deselect Voltage):
(V
PFD
M48T58: V
4.5V V
M48T58Y: V
4.2V V
SELF-CONTAINED BATTERY and
CRYSTAL IN THE CAPHAT™ DIP PACKAGE
PACKAGING INCLUDES A 28-LEAD SOIC
AND SNAPHAT separately)
SOIC PACKAGE PROVIDES DIRECT
CONNECTION FOR A SNAPHAT HOUSING CONTAINING THE BATTERY AND CRYSTAL
PIN AND FUNCTION COMPATIBLE WITH
JEDEC STANDARD 8 Kb x8 SRAMs
= 4.75 to 5.5V
CC
4.75V
PFD
= 4.5 to 5.5V
CC
4.5V
PFD
®
TOP (to be ordered
M48T58
M48T58Y

Figure 1. 28-pin PCDIP, CAPHAT™ Package

28
1
PCDIP28 (PC) Battery/Crystal
CAPHAT

Figure 2. 28-pi n S O I C Package

SNAPHAT (SH)
Battery/Crystal
28
1
SOH28 (MH)
1/27April 2004
M48T58, M48T58Y
TABLE OF CONTENTS
FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Figure 1. 28-pin PCDIP, CAPHAT™ Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Figure 2. 28-pin SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SUMMARY DESCRIPTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Figure 3. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Figure 4. DIP Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 5. SOIC Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 6. Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
OPERATION MODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 2. Operating Modes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
READ Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 7. READ Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 3. RE A D Mode AC Charac teristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
WRITE Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 8. WRITE Enable Controlled, WRITE AC Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 9. Chip Enable Controlled, WRITE AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 4. WRITE Mode AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Data Retention Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
CLOCK OPERATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Reading the Clock. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Setting the Clock. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Stopping and Starting the Oscillator. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5. Register Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Calibrating the Clock. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 10.Crystal Accuracy Across Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 11.Clock Calibration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Battery Low Flag . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Century Bit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
V
Noise And Negative Going Transients. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
CC
Figure 12.Supply Voltage Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 6. Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 7. Operating and AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 13.AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 8. Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 8
Table 9. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/27
M48T58, M48T58Y
Figure 14.Power Down/Up Mode AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 10.Power Down/Up AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 11.Power Down/Up Trip Points DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
PACKAGE MECHANICAL INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 15.PCDIP28 – 28-pin Plastic DIP, battery CAPHAT, Package Outline . . . . . . . . . . . . . . . . 21
Table 12. PCDIP28 – 28-pin Plastic DIP, battery CAPHAT, Package Mechanical Data. . . . . . . . . 21
Figure 16.SOH28 – 28-lead Plastic Small Outline, 4-socket battery SNAPHAT, Package Outline. 22 Table 13. SOH28 – 28-lead Plastic Small Outline, 4-socket battery SNAPHAT, Pack. Mech. Data22
Figure 17.SH – 4-pin SNAPHAT Housing for 48mAh Battery & Crystal, Package Outline . . . . . . . 23
Table 14. SH – 4-pin SNAPHAT Housing for 48mAh Battery & Crystal, Package Mech. Data. . . . 23
Figure 18.SH – 4-pin SNAPHAT Housing for 120mAh Battery & Crystal, Package Outline . . . . . . 24
Table 15. SH – 4-pin SNAPHAT Housing for 120mAh Battery & Crystal, Package Mech. Data. . . 24
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 16.Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 17.SNAPHAT Battery Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 18.Document Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3/27
M48T58, M48T58Y

SUMMARY DESCRIPTIO N

The M48T58/Y TIMEKEEPER® RAM is a 8Kb x 8 non-volatile static RAM and real time clock. The monolithic chip is available in two special packag­es to provide a highly integrated battery backed-up memory and real time clock solution.
The M48T58/Y is a non-volatile pin and function equivalent to any JEDEC standard 8Kb x 8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed.
The 28-pin, 600mil DIP CAPHAT™ houses the M48T58/Y silicon with a quartz crystal and a long life lithium button cell in a single package.

Figure 3. Logic Diagram Table 1. Signal Names

The 28-pin, 330mil SOIC provides sockets with gold plated contacts at bot h ends for direct con­nection to a separate SNAPHAT taining the battery and crystal. The unique design allows the SNAPHAT battery package to be mounted on top of the SOIC package after the completion of the surface mount process. Inser­tion of the SNAPHAT housing after reflow pre­vents potential battery and c rystal dam age due to the high temperatures required for device surface­mounting. The SNAPHAT housing is keyed to pre­vent reverse insertion. The SOIC and battery/crys­tal packages are shipped separately in plastic anti­static tubes or in Tape & Reel form.
For the 28-lead SOIC, the battery/crystal package (e.g., SNAPHAT) part number is “M4T28­BR12SH” (see Table 17., page 25).
®
housing con-
V
CC
13
A0-A12
W
E1 FT
E2
G
M48T58
M48T58Y
V
SS
8
DQ0-DQ7
AI01374B
A0-A12 Address Inputs
DQ0-DQ7 Data Inputs / Outputs
FT
E1 E2 Chip Enable 2
G
W
V
CC
V
SS
Frequency Test Output (Open Drain)
Chip Enable 1
Output Enable WRITE Enable Supply Voltage Ground
4/27
M48T58, M48T58Y

Figure 4. DIP C on ne ctions Figure 5. SOI C Co nn e ct io ns

1
FT V
2
A12
3
A7
4
A6
5
A5 A4
6
A3
7
M48T58
8
A2 A1 A0
DQ0
M48T58Y 9 10 11 12
DQ2
13 14
SS

Figure 6. Block Diagram

28 27 26 25 24 23 22 21 20 19 18 17 16 15
AI01375B
CC
W E2 A8 A9 A11 G A10 E1 DQ7 DQ6 DQ5DQ1 DQ4 DQ3V
FT
FT V
A12
A7 A6 A5 A4 A3 A2 A1 A0
DQ0
1 2 3 4 5 6 7 8 9 10 11
M48T58Y
12
DQ2
SS
13 14
AI01376B
28 27 26 25 24 23 22 21 20 19 18 17 16 15
CC
W E2 A8 A9 A11 G A10 E1 DQ7 DQ6 DQ5DQ1 DQ4 DQ3V
32,768 Hz CRYSTAL
LITHIUM
CELL
OSCILLATOR AND
CLOCK CHAIN
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
V
CC
POWER
V
PFD
8 x 8 BiPORT
SRAM ARRAY
8184 x 8
SRAM ARRAY
V
SS
A0-A12
DQ0-DQ7
E1 E2 W G
AI01377C
5/27
M48T58, M48T58Y

OPERATION MODES

As Figure 6., page 5 shows, the static memory ar­ray and the quartz controlled clock oscillator of the M48T58/Y are integr ated on one silicon c hip. T he two circuits are interconnected at the up per eight memory locations to provide user accessible BYTEWIDE™ clock information in t he bytes with addresses 1FF8h-1FFFh. The clock locations contain the century, year, month, date, day, hour, minute, and second in 24 hour BCD format (except for the century). Corrections for 28, 29 (l eap year ­valid until 2100), 30, and 31 day months are made automatically. Byte 1FF8h is the clock control reg­ister. This byte controls user access to the clock information and also stores the clock calibration setting.
The eight clock bytes are not the actual clock counters themselves; they are memory locations

Table 2. Operating Modes

Mode
Deselect Deselect X WRITE READ READ Deselect
Deselect
Note: X = VIH or VIL; VSO = Battery B ack-up Switchover Voltage.
1. See Table 11., page 20 for details.
VSO to V
V
CC
4.75 to 5.5V
or
4.5 to 5.5V
(min)
PFD
(1)
V
SO
E1 E2 G W DQ0-DQ7 Power
(1)
V
IH
V
IL
V
IL
V
IL
X X X X High Z CMOS Standby X X X X High Z Battery Back-up Mode
X X X High Z Standby
V
IL
V
IH
V
IH
V
IH
consisting of BiPORT™ READ/write memory cells. The M48T58/Y includes a clock control cir­cuit which updates the clock bytes with current in­formation once per second. The information can be accessed by the user in the same manner as any other location in the static memory array.
The M48T58/Y also has its own Pow er-fail Detect circuit. The control circuitry constantly monitors the single 5V supply for an out-of-tolerance condi­tion. When V
is out of tolerance, the circuit write
CC
protects the SRAM, providing a high degree of data security in the midst of unpredictable system operation brought on by low V
. As VCC falls be-
CC
low the Battery Back-up Switchover Voltage
), the control circuitry connects the battery
(V
SO
which maintains data and clock operation until val­id power returns.
X X High Z Standby X
V
IL
V
IH
V
IL
V
IH
V
IH
D
IN
D
OUT
High Z Active
Active Active
6/27

READ Mode

The M48T58/Y is in the READ Mode whenever W (WRITE Enable) is high, E1 (Chip Enable 1) is low, and E2 (Chip Enable 2) is high. The unique ad­dress specified by the 13 Address Inputs defines which one of the 8, 192 bytes of d ata is to be ac­cessed. Valid data will be available at the Data I/O pins within Address Access time (t
AVQV
) after the
last address input signal is stable, providing that
, E2, and G access times are also satis fi e d .
the E1 If the E1
, E2 and G access ti mes are not met , valid
data will be available after the latter of the Chip En-

Figure 7. READ Mode AC Waveforms

M48T58, M48T58Y
able Access times (t Enable Access time (t
E1LQV
GLQV
or t
).
The state of the eight t hree-state Da ta I/O si gnals is controlled by E1 tivated before t an indeterminate state until t Inputs are changed while E1
, E2 and G. If the outputs are ac-
, the data lines will be driven to
AVQV
AVQV
, E2 and G remain ac­tive, output data will remain valid for Output Data Hold time (t
) but will go indeterminate until the
AXQX
next Address Access.
tAVAV
) or Output
E2HQV
. If the Address
A0-A12
E1
E2
G
DQ0-DQ7
Note: W RITE Enable (W) = High.
VALID
tAVQV tAXQX
tE1LQV
tE1LQX
tE2HQV
tE2HQX
tGLQX
tGLQV
tGHQZ
VALID
tE1HQZ
tE2LQZ
AI00962
7/27
M48T58, M48T58Y

Table 3. READ Mode AC Characteristics

Symbol
t
AVAV
t
AVQV
t
E1LQV
t
E2HQV
t
GLQV
t
E1LQX
t
E2HQX
t
GLQX
t
E1HQZ
t
E2LQZ
t
GHQZ
t
AXQX
Note: 1. Valid for Ambient Op erating Temp erature: TA = 0 to 70°C; VCC = 4.75 to 5.5V or 4.5 to 5.5V (except where noted).
2. C
READ Cycle Time 70 ns Address Valid to Output Valid 70 ns Chip Enable 1 Low to Output Valid 70 ns Chip Enable 2 High to Output Valid 70 ns Output Enable Low to Output Valid 35 ns
(2)
Chip Enable 1 Low to Output Transition 5 ns
(2)
Chip Enable 2 High to Output Transition 5 ns
(2)
Output Enable Low to Output Transition 5 ns
(2)
Chip Enable 1 High to Output Hi-Z 25 ns
(2)
Chip Enable 2 Low to Output Hi-Z 25 ns
(2)
Output Enable High to Output Hi-Z 25 ns Address Transition to Output Transition 10 ns
= 5pF.
L
Parameter
(1)
M48T58/Y
Min Max
Unit
8/27

WRITE Mode

The M48T58/Y is in the WRITE Mode whenever W and E1 are low and E2 is high. The start of a WRITE is referenced from the latter occurring fall­ing edge of W
or E1, or the rising edge of E2. A
WRITE is terminated by the earlier rising edge of
or E1, or the falling edge of E 2. The addr ess es
W must be held valid throughout the cycle. E1 must return high or E2 low for a minimum of t or t
from Chip Enabl e or t
E2LAX
from WRITE
WHAX
or W
E1HAX
Enable prior to the initiation of another READ or WRITE cycle. Data -i n must be valid t the end of WRITE and remain valid for t terward. G cles to avoid bus contention; although, if the output bus has been activated by a low on E1 a high on E2, a low o n W t
WLQZ

Figure 8. WRITE Enable Controlled, WRITE AC Waveform

tAVAV
M48T58, M48T58Y
DVWH
should be kept high during WRITE cy-
will disable the o utputs
after W falls.
prior to
af-
WHDX
and G and
A0-A12
E1
E2
W
DQ0-DQ7
tAVE1L
tAVE2H
tAVWL
tWLQZ
VALID
tAVWH
tWLWH
tDVWH
tWHAX
tWHQX
tWHDX
DATA INPUT
AI00963
9/27
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