STMicroelectronics LM158, LM258, LM358, LM158A, LM258A, LM358A Technical data
Low Power Dual Operational Amplifiers
1
2
3
45
6
7
8
-
+
-
+
■ Internally frequency compensated
■ Large DC voltage gain: 100dB
■ Wide bandwidth (unity gain): 1.1mHz
(temperature compensated)
■ Very low supply current/op (500µA) essentially
independent of supply voltage
■ Low input bias current: 20nA
(temperature compensated)
■ Low input offset voltage: 2mV
■ Low input offset current: 2nA
■ Input common-mode voltage range includes
ground
■ Differential input voltage range equal to the
power supply voltage
■ Large output voltage swing 0V to (Vcc - 1.5V)
Description
LM158-LM258-LM358
LM158A-LM258A-LM358A
N
DIP-8
(Plastic Package)
D & S
SO-8 & miniSO-8
(Plastic Micropackage)
P
TSSOP8
(Thin Shrink Small Outline Package)
These circuits consist of two independent, highgain, internally frequency-compensated which
Pin Connections (top view)
were designed specifically to operate from a
single power supply over a wide range of voltages.
The low power supply drain is independent of the
magnitude of the power supply voltage.
Application areas include transducer amplifiers,
DC gain blocks and all the conventional op-amp
circuits which now can be more easily
implemented in single power supply systems. For
example, these circuits can be directly supplied
with the standard +5V which is used in logic
systems and will easily provide the required
interface electronics without requiring any
additional power supply.
In the linear mode the input common-mode
voltage range includes ground and the output
voltage can also swing to ground, even though
operated from only a single power supply voltage.
LM158-LM258-LM358-LM158A-LM258A-LM358AAbsolute Maximum Ratings
1 Absolute Maximum Ratings
Table 1.Key parameters and their absolute maximum ratings
SymbolParameterLM158,ALM258,ALM358,AUnit
V
Supply voltage +/-16 or 32V
CC
ViInput Voltage-0.3 to +32V
V
P
T
T
R
ESD
id
tot
I
in
oper
stg
T
thja
Differential Input Voltage +32V
Power Dissipation
(1)
Output Short-circuit Duration
Input Current
(3)
(2)
500mW
Infinite
50mA
Operating Free-air Temperature Range-55 to +125 -40 to +1050 to +70°C
Storage Temperature Range-65 to +150°C
Maximum Junction Temperature150°C
j
Thermal Resistance Junction to Ambient
SO8
TSSOP8
DIP8
miniSO8
HBM: Human Body Model
MM: Machine Model
(5)
(6)
(4)
125
120
85
190
300V
200V
°C/W
CDM: Charged Device Model1.5kV
1. Power dissipation must be considered to ensure maximum junction temperature (Tj) is not exceeded.
2. Short-circuits from the output to VCC can cause excessive heating if VCC > 15V. The maximum output current
is approximately 40mA independent
of the magnitude of V
3. This input current only exists when the voltage at any of the input leads is driven negative. It is due to the
collector-base junction of the input PNP
transistor becoming forward biased and thereby acting as input diodes clamps. In addition to this diode action,
there is also NPN parasitic action on
the IC chip. this transistor action can cause the output voltages of the Op-amps to go to the V
(or to ground for a large overdrive)
for the time duration than an input is driven negative.
This is not destructive and normal output will set up again for input voltage higher than -0.3V.
4. Short-circuits can cause excessive heating. Destructive dissipation can result from simultaneous short-circuit
on all amplifiers
5. Human body model, 100pF discharged through a 1.5kΩ resistor into pin of device.
6. Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly into the IC with
no external series resistor (internal resistor < 5Ω), into pin to pin of device.
. Destructive dissipation can result from simultaneous short-circuit on all amplifiers.