STMicroelectronics HCF4069UB User Manual
HCF4069UB
HEX INVERTER
■ MEDIUM-SPEED OPERATION
t
= 30ns (Typ.) at 10V
PD
■ STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
■ QUIESCENT CURRENT SPECIFIED UP TO
20V
■ 5V, 10V AND 15V PARAMETRIC RAT ING S
■ INPUT LEAKAGE CURRENT
I
= 100nA (MAX) AT VDD = 18V TA = 25°C
I
■ 100% TESTED FOR QUIESCENT CURRENT
■ MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIF ICATIONS
FOR DESCRIPTI ON OF B SERI ES CMOS
DEVICES"
DESCRIPTION
The HCF4069UB is a m onoli thic integrat ed circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4069UB consists of six COS/MOS
inverter circuits. This device is intended for all
DIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP HCF4069UBEY
SOP HCF4069UBM1 HCF4069UM013TR
general purpose inverter applications where the
medium power TTL-drive and logic level
conversion capabilities of circuits such HCF4049B
HEX INVERTER/BUFFERS are not required.
PIN CONNECTION
1/7September 2001
HCF4069UB
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 3, 5, 9, 1 1, 13A, B, C, D, E,
F
2, 4, 6, 8, 10, 12G, H, I, J, K,
L
7
14
V
SS
V
DD
TRUTH TABLE
INPUTS OUTPUTS
A, B, C, D, E, F G, H, I, J, K, L
LH
HL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values ar e referred t o V
Supply Voltage
DD
DC Input Voltage -0.5 to VDD + 0.5
I
I
DC Input Current
I
Power Dissipation per Package 200 mW
D
Power Dissipation per Output Transistor 100 mW
Operating Temperature
op
Storage Temperature
stg
pin voltage.
SS
Data Inputs
Data Outputs
Negative Supply Voltage
Positive Supply Voltage
-0.5 to +22 V
V
± 10 mA
-55 to +125 °C
-65 to +150 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
T
2/7
Supply Voltage
DD
Input Voltage 0 to V
I
Operating Temperature
op
3 to 20 V
DD
-55 to 125 °C
V
DC SPECIFICATIONS
Test Condition Value
T
Symbol Parameter
I
Quiescent Current 0/5 5 0.01 0.25 7.5 7.5
L
V
(V)
V
I
(V)
|I
|
O
O
(µA)
V
DD
(V)
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
0/10 10 0.01 0.5 15 15
0/15 15 0.01 1 30 30
0/20 20 0.02 5 150 150
V
High Level Output
OH
Voltage
0/5 <1 5 4.95 4.95 4.95
0/15 <1 15 14.95 14.95 14.95
Low Level Output
V
OL
Voltage
5/0 <1 5 0.05 0.05 0.05
15/0 <1 15 0.05 0.05 0.05
High Level Input
V
IH
Voltage
0.5/4.5 <1 5 4 4 4
1.5/13.5 <1 15 12.5 12.5 12.5
V
IL
Low Level Input
Voltage
4.5/0.5 <1 5 1 1 1
13.5/1.5 <1 15 2.5 2.5 2.5
I
OH
Output Drive
Current
0/5 2.5 <1 5 -1.36 -3.2 -1.15 -1.1
0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36
0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9
0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4
I
OL
Output Sink
Current
0/5 0.4 <1 5 0.44 1 0.36 0.36
0/15 1.5 <1 15 3.0 6.8 2.4 2.4
Input Leakage
I
I
Current
C
Input Capacitance
I
The Noi se Margin for both "1" and "0 " le vel is: 1V min. wi th VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
0/18 Any Input 18
Any Input 5 7.5 pF
±10
-5
-40 to 85°C -55 to 125°C
±0.1 ±1 ±1 µA
HCF4069UB
Unit
µA
V0/10 <1 10 9.95 9.95 9.95
V10/0 <1 10 0.05 0.05 0.05
V1/9 <1 10 8 8 8
V9/1 <1 10 2 2 2
mA
mA0/10 0.5 <1 10 1.1 2.6 0.9 0.9
DYNAMIC ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
t
PLH tPHL
t
TLH tTHL
(*) Typical temperat ure coeffici ent for all VDD value is 0.3 %/°C.
Propagation Delay Time 5 55 110
Output Transition Time 5 100 200
(V)
V
DD
15 25 50
15 40 80
= 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
amb
Test Condition Value (*) Unit
Min. Typ. Max.
ns10 30 60
ns10 50 100
3/7
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