CURRENT DRIVE SINKING CAPABILITY 136 mA TYP. AT V
■ QUIESCENT CURRENT SPECIF . UP TO 20V
■ 5V , 10V AND 15V PARAMETRIC RATINGS
■ INPUT LEAKAGE CURRENT
I
= 100nA (MAX) AT VDD = 18V TA = 25°C
I
■ 100% TESTED FOR QUIESCENT CURRENT
■ MEETS ALL REQUIREMENTS OF JEDEC
= 10V, VDS = 1V
DD
JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTI ON OF B SERI ES CMOS
DEVICES"
DESCRIPTION
HCF40107B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
HCF40107B is a dual 2-input NAND buffer/driver
containing two independent 2-input NA ND buffers
with open-drain single n-channel transistor
outputs. This device features a wired-OR
capability and hig h output sink current capa bility
(136 mA typ. at V
= 10V, VDS = 1V).
DD
DIPSOP
ORDER CODES
PACKAGETUBET & R
DIPHCF40107BEY
SOPHCF40107BM1HCF40107M013TR
PIN CONNECTION
1/11October 2002
HCF40107B
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN NoSYMBOLNAME AND FUNCTION
2, 1, 7, 6A, B, D, EInput
3, 5C,FOutputs
4
8
FUNCTIONAL DIAGRAM
V
SS
V
DD
Negative Supply Voltage
Positive Supply Voltage
TRUTH TABLE
ABC
LLH*
HLH*
LHH*
HHL
* : Requires external and pull-up resistor (RL) to VDD.
# : Without pull-up resistor (3-state).
2/11
#
Z
#
Z
#
Z
LOGIC DIAGRAM
HCF40107B
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
P
Supply Voltage
DD
DC Input Voltage-0.5 to VDD + 0.5
I
I
DC Input Current
I
Power Dissipation per Package200mW
D
-0.5 to +22V
10mA
±
V
Power Dissipation per Output Transistor100mW
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
The Noi se Margin fo r both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
** Measur e d wi th exter nal pull-up resistor, R
*** Forced output dis abled.
Input Leakage
Current
3-State Output
Leakage Current
***
C
Input Capacitance
I
C
Output
O
Capacitance
0/18Any Input18
0/181818
Any Input57.5pF
Any Output30pF
= 10kΩ to VDD.
L
No Internal Pull-up DevicemA
-5
10
±
-4
10
±
-40 to 85°C -55 to 125°C
0.1
±
0.1
±
2220
1
±
Unit
A
µ
V1/9<110777
V9/1<110333
mA
A
µ
A
µ
DYNAMIC ELECTRICAL CHARACTERISTICS (T
SymbolParameter
t
PHL tPLH
Propagation Delay Time
High to Low
Low to High5
t
THL tTLH
Transition Time
High to Low
Low to High5
(*) RL is external pull-up resistor to V
4/11
DD.
(V)
V
DD
5
153060
1550100
5
151020
152550
= 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
amb
Test ConditionValue (*)Unit
Min.Typ.Max.
100200
R
* = 120
L
Ω
ns104590
100200
* = 120
R
L
Ω
ns1060120
50100
R
* = 120
L
Ω
ns102040
50100
* = 120
R
L
Ω
ns103570
TYPICAL APPLICATIONS
HCF40107B
Line-driver Circuit.
Interface of 40107B with Triac, with COS/MOS
Component and Triac isolated.
A 2.2-watt Incandescent Lamp-driver Circuit.
Solenoid Driver Circuit
Direct Dc Driver Interface of 40107B with a Triac.
5/11
HCF40107B
Multiplexed Led Circuit
6/11
Motor-controller Circuit Led Driver Circuit
ABMOTOR FUNCTION
LLOFF
HLCOUNTER CLOCKWISE
HHAS PREVIOUS STATE
LHCLOCKWISE
HHAS PREVIOUS STATE
INHIBITENABLEOUTPUT
LLOFF
HLOFF
LHOFF
LHON
HCF40107B
TEST CIRCUIT
CL = 50pF or equivalent (in cludes jig and probe capac i t ance)
R
= 200K
Ω
L
R
= Z
of pulse generator (typically 50Ω)
T
OUT
7/11
HCF40107B
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibilit y for t he
consequences of use of such informatio n nor for any infringement of paten ts or o ther rig hts of t hird part ies which ma y result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previousl y suppl ied. STM icroel ectronics produc ts are not auth orized for use as c ritica l compone nts in l ife s upport dev ices or
systems without express written approval of STMicroelectronics.
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