STMicroelectronics HCF40107B Technical data
HCF40107B
DUAL 2-INPUT NAND BUFFER/DRIVER
■ 32 TIMES STANDARD B-SERIES OUTPUT
CURRENT DRIVE SINKING CAPABILITY 136 mA TYP. AT V
■ QUIESCENT CURRENT SPECIF . UP TO 20V
■ 5V , 10V AND 15V PARAMETRIC RATINGS
■ INPUT LEAKAGE CURRENT
I
= 100nA (MAX) AT VDD = 18V TA = 25°C
I
■ 100% TESTED FOR QUIESCENT CURRENT
■ MEETS ALL REQUIREMENTS OF JEDEC
= 10V, VDS = 1V
DD
JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTI ON OF B SERI ES CMOS
DEVICES"
DESCRIPTION
HCF40107B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
HCF40107B is a dual 2-input NAND buffer/driver
containing two independent 2-input NA ND buffers
with open-drain single n-channel transistor
outputs. This device features a wired-OR
capability and hig h output sink current capa bility
(136 mA typ. at V
= 10V, VDS = 1V).
DD
DIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP HCF40107BEY
SOP HCF40107BM1 HCF40107M013TR
PIN CONNECTION
1/11October 2002
HCF40107B
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
2, 1, 7, 6 A, B, D, E Input
3, 5 C,F Outputs
4
8
FUNCTIONAL DIAGRAM
V
SS
V
DD
Negative Supply Voltage
Positive Supply Voltage
TRUTH TABLE
AB C
LLH*
HLH*
LHH*
HHL
* : Requires external and pull-up resistor (RL) to VDD.
# : Without pull-up resistor (3-state).
2/11
#
Z
#
Z
#
Z
LOGIC DIAGRAM
HCF40107B
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
P
Supply Voltage
DD
DC Input Voltage -0.5 to VDD + 0.5
I
I
DC Input Current
I
Power Dissipation per Package 200 mW
D
-0.5 to +22 V
10 mA
±
V
Power Dissipation per Output Transistor 100 mW
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
Operating Temperature
op
Storage Temperature
stg
pin voltage.
SS
-55 to +125 °C
-65 to +150 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
T
Supply Voltage
DD
Input Voltage 0 to V
I
Operating Temperature
op
3 to 20 V
DD
-55 to 125 °C
V
3/11
HCF40107B
DC SPECIFICATIONS
Test Condition Value
T
Symbol Parameter
I
Quiescent Current 0/5 5 0.02 5 150 30
L
V
(V)
V
I
(V)
|I
|
O
O
(µA)
V
DD
(V)
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
0/10 10 0.02 10 300 60
0/15 15 0.02 20 600 120
0/20 20 0.04 100 3000 600
V
High Level Input
IH**
Voltage
0.5/4.5 <1 5 3.5 3.5 3.5
1.5/13.5 <1 15 11 11 11
V
Low Level Input
IL**
Voltage
4.5/0.5 <1 5 1.5 1.5 1.5
13.5/1.5 <1 15 4 4 4
I
OL
Output Sink
Current
5 0.4 5 21 32 16 12
51 54468 30 25
10 0.5 10 49 74 37 28
10 1 10 89 136 68 51
15 0.5 15 66 100 50 38
Output Drive
I
OH
Current
I
IH, IIL
I
OH, IOL
The Noi se Margin fo r both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
** Measur e d wi th exter nal pull-up resistor, R
*** Forced output dis abled.
Input Leakage
Current
3-State Output
Leakage Current
***
C
Input Capacitance
I
C
Output
O
Capacitance
0/18 Any Input 18
0/18 18 18
Any Input 5 7.5 pF
Any Output 30 pF
= 10kΩ to VDD.
L
No Internal Pull-up Device mA
-5
10
±
-4
10
±
-40 to 85°C -55 to 125°C
0.1
±
0.1
±
2220
1
±
Unit
A
µ
V1/9 <1 10 7 7 7
V9/1 <1 10 3 3 3
mA
A
µ
A
µ
DYNAMIC ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
t
PHL tPLH
Propagation Delay Time
High to Low
Low to High 5
t
THL tTLH
Transition Time
High to Low
Low to High 5
(*) RL is external pull-up resistor to V
4/11
DD.
(V)
V
DD
5
15 30 60
15 50 100
5
15 10 20
15 25 50
= 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
amb
Test Condition Value (*) Unit
Min. Typ. Max.
100 200
R
* = 120
L
Ω
ns10 45 90
100 200
* = 120
R
L
Ω
ns10 60 120
50 100
R
* = 120
L
Ω
ns10 20 40
50 100
* = 120
R
L
Ω
ns10 35 70
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