STMicroelectronics EMIF06-MSD02N16 Datasheet

1

Micro QFN 16L 3.5 mm x 1.2 mm

(bottom view)

R1

DAT2_Ex

DAT3_Ex

CMD_Ex

CLK_Ex

DAT0_Ex

DAT1_Ex

Vcc

DAT2_In

DAT3_In

CMD_In

DAT0_In

DAT1_In

WP/CD

DAT3 pull-up

DAT3 pull-down

R2

R3

R4

R5

R6

R1

R8

R9

R10

R11

R7

DAT2_Ex

DAT3_Ex

CMD_Ex

CLK_Ex

DAT0_Ex

DAT1_Ex

Vcc

DAT2_In

DAT3_In

CLK_In

DAT0_In

DAT1_In

WP/CD

DAT3 pull-up

DAT3 pull-down

R12

R2

R3

R4

R5

R6

R13

GND

GND

EMIF06-MSD02N16

Datasheet

6-line IPAD EMI filter and ESD protection in micro QFN package

Features

• High design flexibility

• Lead free package

• Very low PCB space consuming: 3.5 mm x 1.2 mm

• Very thin package: 0.55 mm max.

• High efficiency in ESD suppression

• Complies with following standards:

– IEC 61000-4-2 level 4 externals pins

• High reliability offered by monolithic integration

• High reduction of parasitic elements through integration and μQFN packaging

Product status

EMIF06-MSD02N16

Product label

Applications

Where EMI filtering in ESD sensitive equipment is required:

• Mobile telephones

• Navigation systems

• Digital still cameras

• Portable devices

Description

The EMIF06-MSD02N16 is a 6-line, highly integrated device designed to suppress
EMI/RFI noise in all systems exposed to electromagnetic interference.

This filter includes an ESD protection circuitry, which prevents damage to the
application when subjected to ESD surges.

DS5979 - Rev 5 - January 2021
For further information contact your local STMicroelectronics sales office.

www.st.com

1 Characteristics

EMIF06-MSD02N16

Characteristics

Figure 1. Pin configuration

DS5979 - Rev 5

Symbol

V

PP

T

j

T

op

T

stg

Table 1. Absolute maximum ratings (T

Parameter Value Unit

ESD IEC 61000-4-2

Contact discharge:

• on DATx_In, CMD_In and CLK_In pins

• On all other pins

Air discharge:

• on DATx_In, CMD_In and CLK_In pins

• On all other pins

Maximum junction temperature 125 °C

Operating temperature range - 30 to + 85 °C

Storage temperature range - 55 to + 150 °C

amb

= 25 °C)

±2

±8

±12

±15

kV

page 2/14

Figure 2. Electrical characteristics (definitions)

V

BR

I

PP

V

RM

V

F

I

F

I

I

RM

I

R

V

V

CL

Symbol Parameter

V

BR

Breakdown voltage

I

RM

Leakage current at VRM

V

RM

Stand-off voltage

VCL Clamping voltage

Rd Dynamic resistance

IPP Peak pulse current

R

I/O

Series resistance between Input and Output

C

line

Input capacitance per line

EMIF06-MSD02N16

Characteristics

Symbol

V

BR

I

RM

Table 2. Electrical characteristics (T

Test conditions Min. Typ. Max. Unit

IR = 1 mA

VRM = 3 V per line

amb

= 25 °C)

5 8 V

200 nA

R1, R2, R3, R4, R5, R6 Series resistors - tolerance ±20% 36 45 54 Ω

R7, R8, R9, R10, R11, R12 Pull-up resistors 80 90 100 kΩ

R13 Pull-down resistor - tolerance ±20% 375 470 565 kΩ

C

line

V

LINE

= 0 V dc, V

= 30 mV, F = 1 MHz

OSC

20 pF

DS5979 - Rev 5

page 3/14

1.1 Characteristics (curves)

dB

100.0k 1.0M 10.0M 100.0M 1.0G

-50.00

-40.00

-30.00

-20.00

-10.00

0.00

DAT0

DAT1

DAT2 DAT3

CLK

CMD

F (Hz)

100.0k 1.0M 10.0M 100.0M 1.0G

-140.00

-130.00

-120.00

-110.00

-100.00

-90.00

-80.00

-70.00

-60.00

-50.00

-40.00

-30.00

-20.00

-10.00

0.00

DAT2

-DAT3

DAT2

-DAT1

F (Hz)

IN

OUT

55V Max

39V Max

IN

OUT

-41V Max

-34V Max

C

LINE

(pF)

0

2

4

6

8

10

12

14

16

0.0 1.0 2.0 3.0 4.0 5.0

V

LINE

(V)

EMIF06-MSD02N16

Characteristics (curves)

Figure 3. S21 attenuation measurement

Figure 5. ESD response to IEC 61000-4-2 (+12 kV air

discharge) on one input (Vin) and on one output (V

out

Figure 4. Analog cross talk measurements

Figure 6. ESD response to IEC 61000-4-2 (- 12 kV air

)

discharge) on one input (Vin) and on one output (V

out

)

Figure 7. Line capacitance versus reverse voltage applied on DATx and CMD line

DS5979 - Rev 5

page 4/14

2 Application information

Contact when

insertingthe

card

SD card

Pull-up
resistor

V

DD

GND

WP/CD

GND

Host

controller

The EMIF06-mSD02N16 is a dedicated interface device for micro SD card/T-Flash card in mobile phones. The
device provides:

• ESD protection

• EMI filterering

• Pull-up resistors

• Card detection circuit

2.1 ESD protection

Each pin is connected to a TVS diode able to withstand 12 kV on all pins except on DATx_In, CMD_In and
CLK_In.

2.2 EMI filtering

DATx, CMD and CLK lines are immunized against EMI radiations thanks to pi-filters. To avoid any degradation
of the signal integrity at high frequency, the total line capacitance stays lower than 20 pF making the device
compatible with a clock frequency up to 52 MHz.

EMIF06-MSD02N16

Application information

2.3 Pull-up resistors

As recommended by the SD Specifications (Part 1 Physical Layer Version 2.00), all the data lines DATx and the
CMD line must be pulled-up with resistors of 10 to 100 kΩ to avoid bus floating not only in SD 4-bit mode but also
in SD 1-bit and SPI mode.

For the EMIF06-MSD02N16 device the pull-up resistor value has been fixed at 90 kΩ. This value makes the
EMIF06-MSD02N16 compatible with most of the level shifters that may be used in the circuit including auto
direction-sensing translators known to exhibit a weak current output.

2.4

Card detection circuit

The EMIF06-mSD02N16 provides the flexibility to use either mechanical card detection with a dedicated pin
connected to the memory card slot or the electrical card detection using the internal pull resistor of DAT3 of the
micro SD card/T-Flash card.

In case of mechanical card detection, the user must add a pull-up on the circuit connected to the CD (Card
Detect) of the micro-SD/T-Flash slot as shown in Figure 8.

Figure 8. Mechanical card detection

DS5979 - Rev 5

page 5/14