STMicroelectronics EMIF03-SIM01 Schematic [ru]
®
A.S.D.
TM
MAIN APPLICATIONS
EMI filtering protection and ESD for :
SIM Interface (Subscriber identify Module)
■
DESCRIPTION
The EMIF03-SIM01 is a highly integrated array
designed to suppress EMI / RFI noise in all
systems subjected to electromagnetic
interferences.
TheEMIF03-SIM01 flip-chip packagingmeans the
package size is equal to the die size. That's why
EMIF03-SIM01 is a very small device.
Additionally, this filter includes an ESD protection
circuitry which prevents the protected device from
destruction when subjected to ESD surges up to
15 kV.
EMIF03-SIM01
3 LINES EMI FILTER
INCLUDING ESD PROTECTION
Flip Chip package
PIN CONFIGURATION (Ball side)
A2A3
BENEFITS
■
3 lines symetrical (I/O) low-pass-filter
■
High efficiency in EMI filtering
■
Very low PCB space consuming: 1.6 x 1.6 mm
■
Very thin package: 0.65 mm
■
Highefficiency inESD suppressionon bothinput
& output PINS (IEC61000-4-2 level 4)
■
High reliability offered by monolithic integration
■
Highreducing of parasitic elements throughintegration & wafer level packaging.
COMPLIES WITHTHE FOLLOWING STANDARDS :
IEC61000-4-2 15kV (air discharge)
8 kV (contact discharge)
on input & output pins.
TM : ASD is a trademark of STMicroelectronics.
July 2002 - Ed: 6A
B3 B2 B1
2
C1C2C3
1/11
EMIF03-SIM01
Schematic
C2
Aplac model
sub
A3
B3
C3
Port1
50
50p
0.05
0.08nH
0.1
MODEL = demif03
Rseries = 47R (CLK line)
B2 is ground pin
Rseries
MODEL = demif03
sub
= 100R (RST & Data lines)
100R
47R
100R
GND
Port2
50
Vcc
MODEL = demif03_Vcc
sub
A2
B1
C1
DEMIF03 diodes Model
- RS = 1.2
- CJO = 17p
- M = 0.3333
- VJ = 0.6
- ISR = 100p
- BV = 6.8
- IBV = 1m
- TT = 100n
DEMIF03_Vcc diode Model
- RS = 1.5
- CJO = 20p
- M = 0.3333
- VJ = 0.6
- ISR = 100p
- BV = 6.8
- IBV = 1m
- TT = 100n
Filtering behavior
0.00
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
-45.00
-50.00
2/11
dB
Aplac 7.60 User: STMicroelectronics Feb 22 2001
100.0k 1.0M 10.0M 100.0M
f/Hz
B3_B1(CLK) A3_A2(RST)
1.0G
C3_C1(DAT)
ESD response to IEC61000-4-2 (15kV air discharge)
Positive surge Negative surge
EMIF03-SIM01
Capacitance versus reverse applied voltage.
C(pF)
35
30
25
20
15
10
0123456
ABSOLUTE MAXIMUM RATINGS (T
F=1MHz
Vosc=30mV
amb
VR(V)
=25°C)
Symbol Parameter and test conditions Value Unit
V
PP
ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharge
T
j
T
op
T
stg
Junction temperature
Operating temperature range
Storage temperature range
15
8
125 °C
-40 to + 85 °C
-55 to +150 °C
kV
3/11
EMIF03-SIM01
ELECTRICAL CHARACTERISTICS (T
amb
=25°C)
Symbol Parameter
V
V
V
I
RM
Rd
I
PP
BR
RM
CL
Breakdown voltage
Leakage current @ V
Stand-off voltage
Clamping voltage
Dynamic impedance
Peak pulse current
RM
Symbol Test conditions Min. Typ. Max. Unit
V
BR
I
RM
R
d
R
1
R
2
R
3
C
line
IR=1mA
VRM=3V
@0V
6V
1 µA
1.5 Ω
95 100 105 Ω
44.65 47 49.35 Ω
95 100 105 Ω
35 pF
TECHNICAL INFORMATION
FREQUENCY BEHAVIOR
The EMIF03-SIM01is firstly designed as anEMI
/ RFI filter. This low-pass filter is characterized
by the following parameters:
- Cut-off frequency
- Insertion loss
- High frequency rejection
Figure A1shows that attenuation is better than
-20dB at mobile phone frequencies (800MHz to
2.5GHz).
4/11
Fig. A1: Frequency response curve
0.00
dB
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
-45.00
-50.00
Aplac 7.60 User: STMicroelectronics Feb 22 2001
100.0k 1.0M 10.0M 100.0M
f/Hz
B3_B1(CLK) A3_A2(RST)
C3_C1(DAT)
1.0G
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