ST MICROELECTRONICS BYT 12P/1000 Datasheet

STTH1210

Ultrafast recovery - high voltage diode

Main product characteristics

I

F(AV)

V

RRM

T

j

(typ) 1.30 V

V

F

(typ) 48 ns

t

rr

12 A

1000 V

175° C

Features and benefits

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

■ Insulated packages:

– TO-220Ins

Electrical insulation = 2500 V
Capacitance = 7 pF

– TO-220FPAC

Electrical insulation = 2500 V
Capacitance = 12 pF

RMS

RMS

A

A

K

TO-220AC

STTH1210D

K

NC

2

DPAK

STTH1210G

K

A

K

TO-220FPAC

STTH1210FP

A

A

K

TO-220Ins

STTH1210DI

Description

The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.

Such demanding applications include industrial
power supplies, motor control, and similar

Order codes

Part Number Marking

STTH1210D STTH1210D

STTH1210G STTH1210G

STTH1210G-TR STTH1210G

STTH1210FP STTH1210FP

STTH1210DI STTH1210DI

mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.

The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.

March 2006 Rev 1 1/11

www.st.com

11

Characteristics STTH1210

1 Characteristics

Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage 1000 V

2

TO-220AC / D

PAK / TO-220FPAC 30

RMS forward current

TO-220AC Ins 20

2

TO-220AC / D

Average forward current, δ = 0.5

PA K Tc = 125° C

= 40° C

c

12 ATO-220FPAC T

TO-220AC Ins Tc = 95° C

I

FRM

I

FSM

T

Table 2. Thermal parameters

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 120 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 80 A

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature 175 °C

j

Symbol Parameter Value Unit

2

PA K 1 . 9

R

th(j-c)

TO-220AC / D

Junction to case

TO-220AC Ins 3.1

A

°C/WTO-220FPAC 5.4

Table 3. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 3 30

T

j

= 25° C

T

j

T

= 150° C 1.30 1.7

j

= V

V

R

I

= 12 A

F

RRM

10

2.0

T

To evaluate the conduction losses use the following equation:
P = 1.3 x I

F(AV)

+ 0.033 I

F2(RMS)

µA

VTj = 100° C 1.40 1.8

2/11

STTH1210 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

Forward recovery time

t

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

30

I (A)

F(AV)

=0.2

25

20

15

10

5

0

0123456789101112131415

=0.1

=0.05

=0.5

T

Test conditions

IF = 1 A, dIF/dt = -50 A/µs,
V

= 30 V, Tj = 25° C

R

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 12 A, dIF/dt = -200 A/µs,

I

F

= 600 V, Tj = 125° C

V

R

= 12 A, dIF/dt = -200 A/µs,

I

F

V

= 600 V, Tj = 125° C

R

= 12 A dIF/dt = 50 A/µs

I

F

= 1.5 x V

V

FR

I

= 12 A, dIF/dt = 50 A/µs,

F

T

= 25° C

j

, Tj = 25° C

Fmax

Figure 2. Forward voltage drop versus

I (A)

FM

=1

120

110

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Min. Typ Max. Unit

forward current

Tj=150°C

(Maximum values)

Tj=150°C

(Typical values)

67 90

ns

48 65

15 20 A

2

400 ns

5V

Tj=25°C

(Maximum values)

V(V)

FM

Figure 3. Relative variation of thermal

impedance junction to case
versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

TO-220AC
TO-220Ins

0.8

D²PAK

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t(s)

p

Figure 4. Relative variation of thermal

impedance junction to case versus
pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

TO-220FPAB

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

3/11

t (s)

p

Characteristics STTH1210

Figure 5. Peak reverse recovery current

versus dI

I(A)

RM

35

VR=600V
T

=125°C

j

30

25

20

IF=0.5 x I

15

10

5

0

0 50 100 150 200 250 300 350 400 450 500

F(AV)

/dt (typical values)

F

IF= 2 x I

F(AV)

IF= I

F(AV)

dI /dt(A/µs)

F

Figure 7. Reverse recovery charges

versus dI

Q (µC)

rr

3.5

VR=600V

=125°C

T

j

3.0

2.5

2.0

1.5

1.0

0.5

0.0
0 50 100 150 200 250 300 350 400 450 500

/dt (typical values)

F

IF= 2 x I

F(AV)

IF= I

F(AV)

IF=0.5 x I

dI /dt(A/µs)

F

F(AV)

Figure 6. Reverse recovery time versus dI

(typical values)

t (ns)

rr

500

450

400

IF= 2 x I

F(AV)

VR=600V

=125°C

T

j

350

300

IF=I

)

F(AV

250

200

150

100

50

0

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

Figure 8. Softness factor versus dI

IF=0.5 x I

F(AV)

/dt

F

(typical values)

S factor

3.0

2.5

2.0

1.5

dI /dt(A/µs)

1.0
0 50 100 150 200 250 300 350 400 450 500

F

IF=2 x I

VR=600V
T

=125°C

j

F(AV)

F

/dt

Figure 9. Relative variations of dynamic

parameters versus junction
temperature

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

25 50 75 100 125

S

factor

I

RM

t

Q

RR

RR

T (°C)

j

IF= I

VR=600V

Reference: T

F(AV)

=125°C

j

Figure 10. Transient peak forward voltage

versus dI

V (V)

FP

45

IF= I

F(AV)

Tj=125°C

40

35

30

25

20

15

10

5

0

0 100 200 300 400 500

/dt (typical values)

F

dI /dt(A/µs)

F

4/11

STTH1210 Characteristics

Figure 11. Forward recovery time versus

dI

/dt (typical values)

F

t (ns)

fr

700

600

500

400

300

dI /dt(A/µs)

200

0 100 200 300 400 500

F

IF= I

F(AV)

VFR= 1.5 x VFmax.

=125°C

T

j

Figure 13. Thermal resistance junction to

ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, e

R (°C/W)

th(j-a)

80

70

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40

cu

S (cm²)

CU

= 35 µm)

D²PAK

Figure 12. Junction capacitance versus

reverse voltage applied (typical
values)

C(pF)

100

10

V (V)

1

1 10 100 1000

R

V

osc

F=1MHz

=30mV

Tj=25°C

RMS

5/11

Package information STTH1210

2 Package information

Epoxy meets UL94, V0

Cooling method: by conduction (C)

Recommended torque value: 0.55 Nm (TO-220AC, TC-220Ins, TO-220FPAC)

Maximum torque value: 0.7 Nm (TO-220AC, TO-220Ins, TO-220FPAC)

Table 5. T0-220AC dimensions

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

H2

Ø I

L5

L6

L2

F1

F

G

L9

L4

A

C

L7

C 1.23 1.32 0.048 0.051

D 2.40 2.72 0.094 0.107

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.066

D

G 4.95 5.15 0.194 0.202

H2 10.00 10.40 0.393 0.409

L2 16.40 typ. 0.645 typ.

M

E

L4 13.00 14.00 0.511 0.551

L5 2.65 2.95 0.104 0.116

L6 15.25 15.75 0.600 0.620

L7 6.20 6.60 0.244 0.259

L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102 typ.

Diam. I 3.75 3.85 0.147 0.151

6/11

STTH1210 Package information

Table 6. T0-220Ins dimensions

DIMENSIONS

REF

Millimeters Inches

Min. Max. Min. Max.

A 15.20 15.90 0.598 0.625

a1 3.75 0.147

a2 13.00 14.00 0.511 0.551

B 10.00 10.40 0.393 0.409

b1 0.61 0.88 0.024 0.034

b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181

c1 0.49 0.70 0.019 0.027

c2 2.40 2.72 0.094 0.107

e 4.80 5.40 0.189 0.212

F 6.20 6.60 0.244 0.259

ØI 3.75 3.85 0.147 0.151

I4 15.80 16.40 16.80 0.622 0.646 0.661

L 2.65 2.95 0.104 0.116

l2 1.14 1.70 0.044 0.066

M 2.60 0.102

7/11

Package information STTH1210

Table 7. T0-220FPAC dimensions

DIMENSIONS

REF

Millimeters Inches

Min. Max. Min. Max.

A 4.4 4.6 0.173 0.181

A

H

B

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

Dia

L6

L2

L3

L5

F1

L4

F

G1

G

D

L7

E

E 0.45 0.70 0.018 0.027

F 0.75 1 0.030 0.039

F1 1.15 1.70 0.045 0.067

G 4.95 5.20 0.195 0.205

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409

L2 16 Typ. 0.63 Typ.

L3 28.6 30.6 1.126 1.205

L4 9.8 10.6 0.386 0.417

L5 2.9 3.6 0.114 0.142

L6 15.9 16.4 0.626 0.646

L7 9.00 9.30 0.354 0.366

Dia. 3.00 3.20 0.118 0.126

8/11

STTH1210 Package information

Table 8 . D

L2

L

L3

2

PAK dimensions

E

A1

B2

B

G

2mm min.
FLAT ZONE

DIMENSIONS

REF.

Millimeters Inches

Min. Max Min. Max.

A 4.40 4.60 0.173 0.181

A

C2

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.70 0.93 0.027 0.037

D

B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024

C2 1.23 1.36 0.048 0.054

C

R

D 8.95 9.35 0.352 0.368

E 10.00 10.40 0.393 0.409

A2

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624

V2

L2 1.27 1.40 0.050 0.055

L3 1.40 1.75 0.055 0.069

M 2.40 3.20 0.094 0.126

R 0.40 typ. 0.016 typ.

V2 0° 8° 0° 8°

Figure 14. D2PAK footprint (dimensions in mm)

16.90

10.30

8.90

3.70

5.08

1.30

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.

9/11

Ordering information STTH1210

3 Ordering information

Part Number Marking Package Weight Base qty Delivery mode

STTH1210D STTH1210D TO-220AC 1.86 g 50 Tube

STTH1210DI STTH1210DI TO-220Ins 1.86 g 50 Tube

STTH1210FP STTH1210FP TO-220FPAC 2.2 g 50 Tube

STTH1210G STTH1210G D

STTH1210G-TR STTH1210G D

2

PAK 1.48 g 50 Tube

2

PAK 1.48 g 1000 Tape & reel

4 Revision history

Date Revision Description of Changes

02-Mar-2006 1 First issue.

10/11

STTH1210

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11/11