ST MICROELECTRONICS BUZ 71A Datasheet

G

D

S

BUZ71A

Data Sheet December 2001

13A, 50V, 0.120 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power ﬁeld effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Formerly developmental type TA9770.

Ordering Information

PART NUMBER PACKAGE BRAND

BUZ71A TO-220AB BUZ71A

NOTE: When ordering, use the entire part number.

Features

• 13A, 50V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.120 Ω

DS(ON)

Components to PC Boards”

Symbol

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

±

µ

Ω

θ

≤

θ

≤

µ

BUZ71A

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Speciﬁed

C

BUZ71A UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R Continuous Drain Current, T

= 20k Ω) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

o

= 55

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

DS

DGR

D

DM

GS

D

AS

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 W/

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

STG

, T

J

50 V 50 V 13 A 48 A

20 V

40 W

100 mJ

-55 to 150

o

C

o

C

DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

L

pkg

300 260

o

C

o

C

NOTE:

= 25

J

o

C to 125

1. T

Electrical Speciﬁcations

o

C.

o

T

= 25

C, Unless Otherwise Speciﬁed

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

Gate to Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On Resistance (Note 2) r

DS(ON)

Forward Transconductance (Note 2) g

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance Junction to Case R

Thermal Resistance Junction to Ambient R

DSS

GSS

OSS

RSS

DSS

fs

r

f

ISS

JC

JA

I

= 250 µ A, V

D

V

= V

GS

o

T

= 25

J

T

= 125

J

V

= 20V, V

GS

I

= 9A, V

D

V

= 25V, I

DS

V

= 30V, I

CC

R

= 10 Ω

L

V

= 25V, V

DS

= 0V 50 - - V

GS

, I

= 1mA (Figure 9) 2.1 3 4 V

DS

D

C, V

= 50V, V

DS

o

C, V

= 50V, V

DS

= 0V - 10 100 nA

DS

= 10V (Figure 8) - 0.11 0.12

GS

= 9A (Figure 11) 3.0 5.2 - S

D

3A, V

≈

D

= 0V - 20 250

GS

= 0V - 100 1000

GS

= 10V, R

GS

= 50 Ω,

-2030 ns

-5585 ns

-7090 ns

- 80 110 ns

= 0V, f = 1MHz (Figure 10) - 480 650 pF

GS

- 280 450 pF

- 160 280 pF

3.1

75

o

A

C/W

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I

Pulsed Source to Drain Current I

Source to Drain Diode Voltage V

Reverse Recovery Time t

Reverse Recovery Charge Q

SD

SDM

SD

rr

RR

NOTES:

2. Pulse Test: Pulse width ≤ 300 µ s, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. V

= 10V, T

DD

= 25

J

o

C, L = 820 µ H, I

= 14A. (See Figures 14 and 15).

PEAK

T

C

T

C

T

J

T

J

V

R

o

= 25

C--13A

o

= 25

C--52A

o

= 25

C, I

= 25

= 30V

o

C, I

= 26A, V

SD

= 13, dI

SD

= 0V, (Figure 12) - 1.6 2.2 V

GS

/dt = 100A/ µ s,

SD

- 120 - ns

- 0.15 -

C

5

0

0 50 100 150

T

C

, CASE TEMPERATURE (oC)

I

D

, DRAIN CURRENT (A)

10

VGS ≥ 10V

15

30

20

10

0

02 8

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

VGS = 20V

10V

PD = 40W

46

VGS = 6.0V

VGS = 5.5V

V

GS

= 5.0V

V

GS

= 4.5V

V

GS

= 4.0V

V

GS

= 6.5V

V

GS

= 7.0V

V

GS

= 7.5V

V

GS

= 8.0V

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

BUZ71A

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Speciﬁed

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

TRANSIENT THERMAL IMPEDANCE

θJC,

Z

0.01 10

-5

SINGLE PULSE

10

-4

-3

10

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

-2

t, RECTANGULAR PULSE DURATION (s)

10

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

P

DM

t

1

t

2

1/t2

+ T

θJC

C

0

10

1

10

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

2

10

1

10

OPERATION IN THIS

0

AREA MAY BE LIMITED

10

, DRAIN CURRENT (A)

BY r

D

I

10

DS(ON)

-1 0

10

VDS, DRAIN TO SOURCE VOLTAGE (V)

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

5µs

10µs

100µs

1ms

10ms 100ms

DC

2

10

TJ = MAX RATED TC = 25oC SINGLE PULSE

3

10

010 2015

0.3

0.2

0.1

0

I

D

, DRAIN CURRENT (A)

NORMALIZED ON RESISTANCE

0.4

5

VGS = 5V

5.5V 6V 6.5V 7V 7.5V 8V

10V

20V

9V

25 30

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

-50 0 50 100 150

V

GS(TH)

, GATE THRESHOLD VOLTAGE (V)

4

3

2

1

0

T

J

, JUNCTION TEMPERATURE (oC)

ID = 1mA

V

DS

= V

GS

6

3

4

2

1

0

0 5 10 15

I

D

, DRAIN CURRENT (A)

g

fs

, TRANSCONDUCTANCE (S)

PULSE DURATION = 80µs

VDS = 25V, TJ = 25oC

5

DUTY CYCLE = 0.5% MAX

BUZ71A

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

15

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

= 25V

V

DS

= 25oC

T

J

10

5

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

I

0

0510

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. TRANSFER CHARACTERISTICS FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE

0.30 VGS = 10V, ID = 9A

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

VOLTAGE AND DRAIN CURRENT

0.20

, DRAIN TO SOURCE

0.10

ON RESISTANCE (Ω)

DS(ON)

r

0

-40 0 40

T

, JUNCTION TEMPERATURE (oC)

J

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs

JUNCTION TEMPERATURE

1

10

VGS = 0, f = 1MHz C

= CGS +C

ISS

C

= C

RSS

C

≈ CDS + C

OSS

0

10

-1

10

C, CAPACITANCE (nF)

-2

10

0 10203040

FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT

GD

GS

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

80

120

C

160

FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION

TEMPERATURE

ISS

OSS

RSS

15

10

5

0

0510

Q

g

, GATE CHARGE (nC)

V

GS

, GATE TO SOURCE VOLTAGE (V)

ID = 18A

VDS = 40V

15 20 25

VDS = 10V

V

DD

V

DS

BV

DSS

t

P

I

AS

t

AV

0

t

ON

t

d(ON)

t

r

90%

10%

V

DS

90%

10%

t

f

t

d(OFF)

t

OFF

90%

50%

10%

PULSE WIDTH

V

GS

0

BUZ71A

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

2

10

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

1

10

TJ = 150oC

0

TJ = 25oC

, SOURCE TO DRAIN CURRENT (A)

SD

I

-1

10

0 0.5 1.0 1.5 2.0

V

, SOURCE TO DRAIN VOLTAGE (V)

SD

2.5 3.0

FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Test Circuits and Waveforms

VARY t

REQUIRED PEAK I

0V

V

DS

L

TO OBTAIN

P

AS

V

GS

R

G

+

V

DD

-

DUT

t

P

I

AS

0.01Ω

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

R

L

+

V

R

G

DUT

V

GS

FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

DD

-

Test Circuits and Waveforms (Continued)

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

V

GS

V

DD

I

g(REF)

0

V

DS

(ISOLATED SUPPLY)

SAME TYPE AS DUT

D

12V

BATTERY

0.2µF

50kΩ

CURRENT

REGULATOR

0.3µF

BUZ71A

G

I

0

g(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 18. GATE CHARGE TEST CIRCUIT

S

CURRENT

I

D

SAMPLING

DUT

V

DS

FIGURE 19. GATE CHARGE WAVEFORMS

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4

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