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®
MEDIUM POWER NPN SILICON TRANSISTOR
■ STMicroelectronics P REF ERRED
SALESTYPE
■ NPN TRANSISTOR
■ FAST SWITCHING SPEED
■ LOW COLLECTOR EMITTER SATURATION
APPLICATIONS
■ SWITCHING REGULATO RS
■ MOTOR CO NT RO L
DESCRIPTION
The BUV26 is a Multiepitaxial Planar NPN
Transistor in TO-220 package. It is intended for
use in high frequency and efficency converters,
switching regulators and motor control.
TO-220
BUV26
3
2
1
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
P
T
Collector-base Voltage (IE = 0) 180 V
CBO
Collector-Emitter Voltage (IB = 0) 90 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Emitter Current 14 A
I
C
Collector Peak Current (tp <10ms) 25 A
CM
Base Current 4 A
I
B
Base Peak Current (tp <10ms) 6 A
BM
Total Dissipation at Tc < 25 oC85W
tot
Total Dissipation at Tc < 60 oC65W
tot
Storage Temperature -65 to +175
stg
Max. Operating Junction Temperature 175
T
j
o
C
o
C
February 2003
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BUV26
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.76
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEX
I
EBO
V
CEO(sus)
Collector Cut-off
Current (R
= 50Ω)
BE
Collector Cut-off
Current (V
= -1.5V)
BE
Emitter Cut-off
Current (I
= 0)
C
∗ Collector-Emitter
V
= 180V T
CE
= 180V
V
CE
= 5 V 1 mA
V
EB
I
= 0.2 A L = 25mH 90 V
C
= 125oC3mA
c
= 125oC1mA
Tc
Sustaining Voltage
(I
= 0)
B
V
EBO
Emitter-Base
Voltage (I
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
= 0)
C
= 50mA 7 30 V
I
E
IC = 6A IB = 0.6A
I
= 12A IB = 1.2A
C
0.6
1.5
IC =12A IB = 1.2A 2 V
Saturation Voltage
RESISTIVE LOAD
on
s
t
f
Turn-on Time
Storage Time
Fall Time
t
t
V
= 50V IC =12A
CC
V
= - 6V IB1 = 1.2A
BE
RBB = 2.5Ω
0.4
0.45
0.12
0.6
1
0.25
INDUCTIVE LOAD
t
t
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
s
t
f
s
t
f
Storage time
Fall Time
Storage Time
Fall Time
V
= 50V IC = 12A
CC
V
= - 5V IB1 = 1.2A
BE
= - 0.5µH
L
B
V
= 50V IC = 12 A
CC
V
= - 5V IB1 = 1.2A
BE
= - 0.5µH Tc = 125oC
L
B
0.5
0.04
2
0.15
V
V
ms
µs
µs
µs
µs
µs
µs
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TO-220 MECHANICAL DATA
BUV26
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409
L2 16.40 0.645
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
M 2.60 0.102
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
P011CI
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BUV26
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replac es all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectro nics – Printed in Italy – All Rights Reserved
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