ST MICROELECTRONICS BUV 26 Datasheet

INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistors BUV26/A

DESCRIPTION

·Collector-Emitter Sustaining Voltage­ : V

CEO(SUS)

·High Switching Speed

APPLICATIONS

·Designed for fast switching applications such as high
frequency and efficiency converters, switching regulators
and motor control.

ABSOLUTE MAXIMUM RATINGS(T

SYMBOL PARAMETER VALUE UNIT

= 90V(Min)- BUV26

100V(Min)- BUV26A

=25℃)

a

V

V

V

I

I

P

T

CES

CEO

EBO

I

C

CM

I

B

BM

C

T

J

stg

Collector-Emitter Voltage
V

= 0

BE

Collector-Emitter Voltage

Emitter-Base Voltage 5 V

Collector Current-Continuous 14 A

Collector Current-Peak 25 A

B Base Current-Continuous 4 A

Base Current-Peak 6 A
Collector Power Dissipation

@ TC=25℃
Junction Temperature 150 ℃

Storage Temperature Range -65~150 ℃

BUV26 180

BUV26A 200

BUV26 90

BUV26A 100

65 W

V

V

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

R

th j-c

Thermal Resistance, Junction to Case 1.92

isc website：www.iscsemi.cn

℃/W

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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistors BUV26/A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V

CEO(SUS)

V

CE(sat)-1

V

CE(sat)-2

V

BE(sat)-1

V

BE(sat)-2

I

CES

I

CES

Collector-Emitter
Sustaining Voltage

BUV26 90

IC= 0.2A ;IB= 0; L= 25mH B

BUV26A

Collector-Emitter

BUV26 IC= 12A; IB= 1.2A 1.5

Saturation Voltage

Collector-Emitter

BUV26A I

BUV26 IC= 6A; IB= 0.6A B 0.6

= 10A; IB= 1.0A

C

Saturation Voltage

= 5A; IB= 0.5A B

C

Base-Emitter

BUV26A I

BUV26 IC= 12A; IB= 1.2A 2.0

Saturation Voltage

= 10A; IB= 1.0A

C

Base-Emitter

BUV26A I

BUV26 IC= 6A; IB= 0.6A B 1.2

Saturation Voltage

BUV26A I

= 5A; IB= 0.5A B

C

Collector Cutoff Current VCE=V

Collector Cutoff Current VCE=V

CESmax;VBE

CESmax;RBE

V

100

V

1.0

V

0.5

V

1.5

V

1.2

=-1.5V,TJ=125℃ 1.0 mA

=50Ω,TJ=125℃ 3.0 mA

I

EBO

Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA

Switching Times; Resistive Load

= 50V

t

on

Turn-On Time 0.4 0.6 μs

V

CE

For BUV26
I

= 12A; IB1= 1.2A; IB2= -2.4A

t

stg

Storage Time 0.45 1.0 μs

C

For BUV26A
I

t

f

Fall Time

= 10A; IB1= 1.0A; IB2= -2.0A

C

0.12 0.25 μs

isc website：www.iscsemi.cn

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