®
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronics P REFE RRE D
SALESTYPE
■ NPN TRAN SISTOR
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LO T SPREAD FOR
RELIAB LE OP ERA T ION
■ LOW BASE-DRIVE REQUIREMENTS
■ VERY HIGH SWITCHING SPEED
■ FULLY CHARACTERI SE D A T 125
■ HIGH RUGGEDNESS
■ INTEGRATED ANTIPARALLEL
COLLE CTO R -EM I TTE R DI O DE
APPLICATIONS
■ ELECTRO NI C TRAN S FOR ME RS F OR
HALOG EN LA MP S
■ ELECTRONI C BALLAS TS FO R
FLUORESCE NT LIG HT I NG
■ SWITCH MODE PO W E R S UPP LIES
o
C
BUL58D
NPN POW ER TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMAT I C DIAGRAM
DESCRIPTION
The BUL58D is manufactured using high voltage
Multi Epitaxial Planar technology to enhance
switching speeds while maintaining a wide
RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MA XIMU M RAT INGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = 0) 800 V
CES
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
Collector Current 8 A
I
C
Collector Peak Current (tp < 5 ms) 16 A
CM
Base Current 4 A
I
B
Base Peak Current (tp < 5 ms) 8 A
BM
Total Dissipation at Tc = 25 oC85W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
June 2001
1/6
BUL58D
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
1.47
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specif ied)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
= 0)
B
Collector-Emitter
= 800 V
V
CE
V
= 800 V Tj = 125 oC
CEO
= 450 V 200 µA
V
CE
200
500
IC = 100 mA L = 25 mH 450 V
Sustaining Voltage
V
V
CE(sat)
EBO
Emitter-Base Voltage
(I
= 0)
C
∗ Collector-Emitter
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 5 A VCE = 5 V
FE
INDUCTIVE LOAD
t
s
t
f
Storage Time
Fall Time
INDUCTIVE LOAD
t
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Storage Time
s
Fall Time
t
f
Diode Forward Voltage IC = 3 A 3 V
f
= 10 mA 9 V
I
E
IC = 4 A IB = 0.8 A
I
= 5 A IB = 1 A
C
IC = 4 A IB = 0.8 A
I
= 5 A IB = 1 A
C
1.5
2
1.3
1.5
5
I
= 500 mA VCE = 5 V
C
38
IC = 2 A IB1 = 0.4 A
V
V
I
V
V
T
= -5 V R
BE(off)
= 250 V L = 200 µH
CL
= 2 A IB1 = 0.4 A
C
= -5 V R
BE(off)
= 250 V L = 200 µH
CL
= 125 oC
j
BB
BB
= 0 Ω
= 0 Ω
1
90
1.5
180
1.8
180
µA
µA
V
V
V
V
µs
ns
µs
ns
Safe Operating A reas Derating Curve
2/6
BUL58D
DC Current Gain
Collector Emitt er Sat uration Volt a ge
DC Current Gain
Base Emitt er Sat urat ion Volt age
Inductive Fall Time
Inductive Storage Time
3/6
BUL58D
Reverse Biased SOA RBSOA and Inductiv e Lo ad Switching T est
Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifie r
4/6
TO-220 MECHANICAL DATA
BUL58D
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409
L2 16.40 0.645
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
M 2.60 0.102
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
P011CI
5/6
BUL58D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectro nics – Printed in Italy – All Rights Reserved
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