®
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronics P REFE RRE D
SALESTYPE
■ NPN TRAN SISTOR
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LO T SPREAD FOR
RELIAB LE OP ERA T ION
■ LOW BASE-DRIVE REQUIREMENTS
■ VERY HIGH SWITCHING SPEED
■ FULLY CHARACTERI SE D A T 125
■ HIGH RUGGEDNESS
■ INTEGRATED ANTIPARALLEL
COLLE CTO R -EM I TTE R DI O DE
APPLICATIONS
■ ELECTRO NI C TRAN S FOR ME RS F OR
HALOG EN LA MP S
■ ELECTRONI C BALLAS TS FO R
FLUORESCE NT LIG HT I NG
■ SWITCH MODE PO W E R S UPP LIES
o
C
BUL58D
NPN POW ER TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMAT I C DIAGRAM
DESCRIPTION
The BUL58D is manufactured using high voltage
Multi Epitaxial Planar technology to enhance
switching speeds while maintaining a wide
RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MA XIMU M RAT INGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = 0) 800 V
CES
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
Collector Current 8 A
I
C
Collector Peak Current (tp < 5 ms) 16 A
CM
Base Current 4 A
I
B
Base Peak Current (tp < 5 ms) 8 A
BM
Total Dissipation at Tc = 25 oC85W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
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C
o
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June 2001
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BUL58D
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
1.47
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specif ied)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
= 0)
B
Collector-Emitter
= 800 V
V
CE
V
= 800 V Tj = 125 oC
CEO
= 450 V 200 µA
V
CE
200
500
IC = 100 mA L = 25 mH 450 V
Sustaining Voltage
V
V
CE(sat)
EBO
Emitter-Base Voltage
(I
= 0)
C
∗ Collector-Emitter
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 5 A VCE = 5 V
FE
INDUCTIVE LOAD
t
s
t
f
Storage Time
Fall Time
INDUCTIVE LOAD
t
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Storage Time
s
Fall Time
t
f
Diode Forward Voltage IC = 3 A 3 V
f
= 10 mA 9 V
I
E
IC = 4 A IB = 0.8 A
I
= 5 A IB = 1 A
C
IC = 4 A IB = 0.8 A
I
= 5 A IB = 1 A
C
1.5
2
1.3
1.5
5
I
= 500 mA VCE = 5 V
C
38
IC = 2 A IB1 = 0.4 A
V
V
I
V
V
T
= -5 V R
BE(off)
= 250 V L = 200 µH
CL
= 2 A IB1 = 0.4 A
C
= -5 V R
BE(off)
= 250 V L = 200 µH
CL
= 125 oC
j
BB
BB
= 0 Ω
= 0 Ω
1
90
1.5
180
1.8
180
µA
µA
V
V
V
V
µs
ns
µs
ns
Safe Operating A reas Derating Curve
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