High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ High ruggedness
■ Fully characterized at 125 °C
■ Integrated antiparallel collector-emitter diode
Applications
TO-220
BUL38D
3
2
1
■ Electronic transformers for halogen lamps
■ Switch mode power supplies
Description
The BUL38D is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability.
The device is designed for use in electronic
transformer for halogen lamps.
Table 1. Device summary
Order code Marking
(1)
Figure 1. Internal schematic diagram
Package Packaging
BUL38D
BUL38D A
or
TO-220 Tube
BUL38D B
1. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
June 2009 Doc ID 7176 Rev 3 1/10
www.st.com
10
Electrical ratings BUL38D
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
V
V
CES
CEO
EBO
I
I
CM
I
I
BM
P
T
T
C
B
tot
stg
Collector-emitter voltage (VBE = 0) 800 V
Collector-emitter voltage (IB = 0) 450 V
Emitter-base voltage (IC = 0) 9 V
Collector current 5 A
Collector peak current (tP < 5 ms) 10 A
Base current 2 A
Base peak current (tP < 5 ms) 4 A
Total dissipation at Tc ≤ 25 °C 80 W
Storage temperature -65 to 150 °C
Max. operating junction temperature 150 °C
J
Table 3. Thermal data
Symbol Parameter Value Unit
R
R
thJC
thJA
Thermal resistance junction-case max 1.56 °C/W
Thermal resistance junction-ambient max 62.5 °C/W
2/10 Doc ID 7176 Rev 3
BUL38D Electrical characteristics
2 Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
I
CEO
V
CEO(sus)
V
EBO
V
CE(sat)
V
BE(sat)
h
FE
(1)(2)
t
s
t
f
t
s
t
f
t
s
t
f
Collector cut-off current
(VBE = 0)
Collector cut-off current
(IB =0)
Collector-emitter
(1)
sustaining voltage (IB = 0)
Emitter-base voltage
= 0)
(I
C
Collector-emitter
(1)
saturation voltage
Base-emitter saturation
(1)
voltage
DC current gain
Resistive load
Storage time
Fall tim e
Inductive load
Storage time
Fall tim e
Inductive load
Storage time
Fall tim e
V
= 800 V
CE
V
= 800 V Tc = 125 °C
CE
V
= 450 V 250 µA
CE
=100 mA 450 V
I
C
= 10 mA 9 V
I
E
= 1 A _ _ IB = 0.2 A
I
C
= 2 A _ IB = 0.4 A
I
C
= 3 A __ IB = 0.75 A
I
C
= 1 A _ _IB = 0.2 A
I
C
= 2 A _ IB = 0.4 A
I
C
I
= 10 mA V
C
= 0.5 A V
I
C
IC = 2 A V
Group A
Group B
= 150 V IC = 2.5 A
V
CC
I
B(on)
= 30 µs
t
P
= -I
B(off)
= 0.5 A
IC = 2 A I
V
V
I
V
V
= -5 V R
BE(off)
= 250 V L = 200 µH
CL
= 2 A I
C
= -5 V R
BE(off)
= 250 V L = 200 µH
CL
CE
CE
CE
B(on)
BB(off)
B(on)
BB(off)
= 5 V
= 5 V
= 5 V
= 0.4 A
=0
= 0.4 A
=0
10
13
22
12.2
100
1
55
1.3
100
500µAµA
0.5
0.7
1.1
1.1
1.2
60
23
32
0.8
1.8
100µsns
TC = 125 °C
V
V
V
V
V
µs
µs
µs
ns
V
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%.
2. The product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the
right to ship either groups according to production availability. Please contact your nearest
STMicrolectronics sales office for delivery details.
Diode forward voltage IF = 2 A 1.5 V
F
Doc ID 7176 Rev 3 3/10
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