STMicroelectronics BUL312FP Diagram

®

HIGH VOLTAGE FAST-SWITCHING

■ HIGH VOLTAGE CAPABILITY

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT- TO- LO T SP RE AD F OR

RELIABLE OPERATION

■ VERY H IGH SWITCHING SPEED

■ FULLY CHARACTERIZE D AT 125

■ LARGE RBSOA

■ FULLY INSULATE D PA CKA GE (U. L.

COMPLIANT) FOR EASY MOUNTING

APPLICATIONS

■ HORIZONT A L DEFLE CT ION F OR TV

■ SMPS

■ ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

DESCRIPTION

The BUL312FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

o

C

BUL312FP

NPN POWER TRANSISTOR

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOL UT E MAXIMU M RATINGS

Symbol Parameter Value Unit

V V V

I

I P

V

T

March 2004

Collector-Emitter Voltage (VBE = 0) 1150 V

CES

Collector-Emitter Voltage (IB = 0) 500 V

CEO

Emitter-Base Voltage (IC = 0) 9 V

EBO

I

Collector Current 5 A

C

Collector Peak Current (tp <5 ms) 10 A

CM

Base Current 3 A

I

B

Base Peak Current (tp <5 ms) 4 A

BM

Total Dissipation at Tc = 25 oC36W

tot

Insulation Withstand Voltage (RMS) from All

isol

1500 V

Three Leads to External Heatsink Storage Temperature -65 to 150

stg

Max. Operating Junction Temperature 150

T

j

o

C

o

C

1/6

BUL312FP

THERMAL DATA

R

thj-case

R

thj-amb

Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max

3.5

62.5

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CES

I

CEO

V

CEO(sus)

Collector Cut-off Current (V

BE

= 0)

Collector Cut-off Current (I

= 0)

B

∗ Collector-Emitter

= 1150 V

V

CE

V

= 1150 V Tj = 125 oC

CE

V

= 500 V 250 µA

CE

I

= 100 mA L= 25 mH 500 V

C

1 2

Sustaining Voltage (I

= 0)

B

V

CE(sat)

EBO

Emitter-Base Voltage

= 0)

(I

C

∗ Collector-Emitter

Saturation Voltage

V

∗ Base-Emitter

BE(sat)

Saturation Voltage

h

∗ DC Current Gain IC = 10 mA VCE = 5 V

FE

INDUCTIVE LOAD

t

Storage Time

s

Fall Time

t

f

I

= 10 mA 10 V

E

IC = 1 A IB = 0.2 A I

= 2 A IB = 0.4 A

C

I

= 3 A IB = 0.6 A

C

IC = 1 A IB = 0.2 A I

= 2 A IB = 0.4 A

C

I

= 3 A IB = 0.6 A

C

0.5

0.7

1.1 1

1.1

1.2

8

I

= 3 A VCE = 2.5 V

C

I

= 2 A IB1 = 0.4 A

C

V V

= -5 V R

BE(off)

= 250 V L = 200 µH

CL

BB

= 0 Ω

8 13.5

1.2 80

1.9

160

(see fig. 1)

INDUCTIVE LOAD

t

Storage Time

s

Fall Time

t

f

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

I

= 2 A IB1 = 0.4 A

C

V V T

= -5V R

BE(off)

= 250 V L = 200 µH

CL

= 125 oC (see fig. 1)

j

BB

= 0 Ω

1.8

150

mA mA

V V V

µs ns

Safe Operating Areas Derating Curve

2/6

BUL312FP

DC Current Gain

Collector Emit ter Sat uration Volt ag e

DC Current Gain

Base Emitter Satur ation Voltage

Inductive Fall Time

Inductive Storage Time

3/6