®
HIGH VOLTAGE FAS T-SWITCHING
■ STMicroelectronics P REF ERRED
SALESTYPE
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNA M IC PARA ME TERS
■ MINIMUM LO T- TO - LOT SPREAD F O R
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
APPLICATIONS:
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
BUL128
NPN POWER TRANSISTOR
3
2
1
TO-220
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
November 2001
Collector-Emitter Voltage (VBE = 0) 700 V
CES
Collector-Emitter Voltage (IB = 0) 400 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
I
Collector Current 4 A
C
Collector Peak Current (tp < 5 ms) 8 A
CM
I
Base Current 2 A
B
Base Peak Current (tp < 5 ms) 4 A
BM
Total Dissipation at Tc = 25 oC70W
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
1/7
BUL128
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
1.78
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
V
V
CEO(sus)
EBO
Collector Cut-off
Current (V
= -1.5 V)
BE
Emitter-Base Voltage
(I
= 0)
C
∗ Collector-Emitter
= 700 V
V
CE
V
= 700 V Tj = 125 oC
CE
= 10 mA 9 V
I
E
I
= 100 mA L = 25 mH 400 V
C
100
500
µA
µA
Sustaining Voltage
(I
= 0)
B
I
V
CE(sat)
CEO
Collector Cut-Off
Current (I
= 0)
B
∗ Collector-Emitter
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 10 mA VCE = 5 V
FE
RESISTIVE LOAD
t
s
t
f
Storage Time
Fall Time
INDUCTIVE LOAD
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronic s sales office for delivery details.
s
t
f
Storage Time
Fall Time
= 400 V 250 µA
V
CE
IC = 0.5 A IB = 0.1 A
I
= 1 A IB = 0.2 A
C
I
= 2.5 A IB = 0.5 A
C
I
= 4 A IB = 1 A 0.5
C
IC = 0.5 A IB = 0.1 A
I
= 1 A IB = 0.2 A
C
I
= 2.5 A IB = 0.5 A
C
0.7
1
1.5
1.1
1.2
1.3
10
I
= 2 A VCE = 5 V
C
Group A
Group B
V
= 125 V IC = 2 A
CC
I
= 0.4 A IB2 = -0.4 A
B1
Tp = 30 µs (see fig.2)
I
= 2 A IB1 = 0.4 A
C
= -5 V RBB = 0 Ω
V
BE(off)
V
clamp
= 200 V
(see fig.1)
14
25
1.5
0.2
0.6
0.1
28
40
3
0.4
1
0.2
V
V
V
V
V
V
V
µs
µs
µs
µs
2/7
BUL128
Safe Operating Areas
DC Current Gain
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Sat uration Volt ag e
3/7
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